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    • 3. 发明申请
    • Substrate processing apparatus
    • 基板加工装置
    • US20090139656A1
    • 2009-06-04
    • US12292947
    • 2008-12-01
    • Koukichi HiroshiroHideyuki YamamotoKazuhiro TakeshitaTakayuki Toshima
    • Koukichi HiroshiroHideyuki YamamotoKazuhiro TakeshitaTakayuki Toshima
    • H01L21/306
    • H01L21/67057
    • The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow. The discharge guide portion is inclined upward, opposite to the central portion in the width direction. The projecting portion includes an inner end portion located nearer to the central portion in the width direction, as compared with the main body and discharge guide portion.
    • 本发明提供一种基板处理装置,用于通过将基板浸入处理液中来处理基板。 该基板处理装置具备:处理槽,具有配置成彼此相对的一对侧壁; 以及分别对应于一对侧壁设置的一对处理液供给机构。 一对处理液供给机构分别构成为将处理液朝向连接该一对侧壁的宽度方向的处理槽的中央部供给,从而在处理液的中央区域产生上升的流动 处理槽的宽度方向。 一对侧壁的每个内壁面包括主体,位于主体上方的突出部分和位于最上方的排出引导部分,并且设置用于允许处理液体溢出的排出口。 排出引导部分在宽度方向上与中心部分相反地向上倾斜。 与主体和排出引导部相比,突出部包括位于宽度方向上更接近中央部的内端部。
    • 6. 发明申请
    • Substrate cleaning apparatus, substrate cleaning method, and storage medium
    • 基板清洁装置,基板清洗方法和存储介质
    • US20080178910A1
    • 2008-07-31
    • US12010745
    • 2008-01-29
    • Koukichi HiroshiroTakayuki Toshima
    • Koukichi HiroshiroTakayuki Toshima
    • B08B7/00
    • H01L21/67051H01L21/67109
    • A substrate cleaning apparatus (1) of the present invention is the substrate cleaning apparatus (1) for cleaning a substrate (wafer 7) with the use of a cleaning agent (e.g., Caro's acid) that is generated by reacting plural kinds of chemical liquids (e.g., sulfuric acid and hydrogen peroxide solution). The substrate cleaning apparatus (1) comprises: a mixing unit (31) for mixing plural kinds of chemical liquids, a supplying unit (32) for supplying the chemical liquids that have been mixed by the mixing unit, onto a surface of a substrate to be cleaned; and a heating unit (14) for heating the chemical liquids that have been supplied onto the surface of the substrate by the supplying unit, on the surface of the substrate. In particular, the mixing unit (31) includes a reaction restraining mechanism (33) for restraining a reaction of the mixed chemical liquids, and the reaction restraining mechanism (33) is on a cooling mechanism for cooling the mixed chemical liquids.
    • 本发明的基板清洗装置(1)是使用通过使多种化学液体反应而产生的清洗剂(例如卡罗酸)来清洗基板(晶片7)的基板清洗装置(1) (例如硫酸和过氧化氢溶液)。 基板清洗装置(1)包括:混合多种化学液体的混合单元(31),用于将由混合单元混合的化学液体供给到基板的表面上的供给单元(32) 清洁; 以及加热单元(14),用于在基板的表面上加热由供给单元提供到基板的表面上的化学液体。 特别地,混合单元(31)包括用于抑制混合的化学液体的反应的反应抑制机构(33),反应抑制机构(33)在用于冷却混合的化学液体的冷却机构上。