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1. 发明授权

US4182964A Negative resistance element circuit combinations 失效
标题翻译：负电阻元件电路组合
公开(公告)号：US4182964A
公开(公告)日：1980-01-08
申请号：US273363
申请日：1972-07-20
申请人： Shoei Kataoka , Hiroshi Tateno , Hiroyuki Fujisada , Hideo Yamada , Mitsuo Kawashima , Yasuo Komamiya
发明人： Shoei Kataoka , Hiroshi Tateno , Hiroyuki Fujisada , Hideo Yamada , Mitsuo Kawashima , Yasuo Komamiya
IPC分类号： H01L47/02 , H03B7/14 , H03F3/10
CPC分类号： H01L47/02
摘要： Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reactively with the solid body through a dielectric member, whereby a solid state element having a negative differential conductivity is obtained. Such a type of negative-resistance solid state element, together with its various modes of embodimental construction disclosed herein, affords a superior solid state element which is applicable to amplifiers, oscillators, logic memories, and the like of millimeter or submillimeter bands.
摘要翻译：常规耿氏二极管中的高场域的发生通过电介质部件或部分或全部覆盖半导体元件等固体，或通过电介质部件与固体本身反应地连接的金属层等控制元件，由此获得具有负差分电导率的固态元件。这种类型的负电阻固体元件以及本文公开的各种实施形式的结构，提供了可应用于毫米波或亚毫米波段的放大器，振荡器，逻辑存储器等的优越的固态元件。

2. 发明授权

US4589001A Quasiparticle injection control type superconducting device 失效
标题翻译：准粒子注入控制型超导装置
公开(公告)号：US4589001A
公开(公告)日：1986-05-13
申请号：US603984
申请日：1984-04-26
申请人： Shigeki Sakai , Hiroshi Tateno , Shoei Kataoka
发明人： Shigeki Sakai , Hiroshi Tateno , Shoei Kataoka
IPC分类号： H01L39/22
CPC分类号： H01L39/228 , Y10S505/874
摘要： A quasiparticle control device including a Josephson junction element formed of a pair of superconductors joined to each other, with a weak link part intervening therebetween, and a third electrode provide on the weak link part. The characteristics of the Josephson junction of the Josephson junction element is controlled by injecting quasiparticles to the third electrode.
摘要翻译：一种准粒子控制装置，包括由彼此连接的一对超导体形成的约瑟夫逊结元件，其间介于其间的弱连接部分和第三电极提供在弱连接部分上。通过将准粒子注入到第三电极来控制约瑟夫逊结元件的约瑟夫逊结的特征。

3. 发明授权

US4137569A Logic circuit system using high electric field domain 失效
标题翻译：逻辑电路系统采用高电场领域
公开(公告)号：US4137569A
公开(公告)日：1979-01-30
申请号：US783025
申请日：1977-03-30
申请人： Yasuo Komamiya , Hiroshi Tateno , Shoei Kataoka , Morisue Mititada
发明人： Yasuo Komamiya , Hiroshi Tateno , Shoei Kataoka , Morisue Mititada
IPC分类号： G06F7/50 , G06F7/501 , H03K19/02 , H03K19/08 , H03K19/21 , G06F7/385
CPC分类号： G06F7/501 , H03K19/02 , H03K19/08 , H03K19/21 , G06F2207/4802
摘要： In a high electric field domain device composed of a plurality of circuit elements each provided with a high electric field domain-generating electrode and a high electric field domain-suppressing electrode, logic operations can be performed by preparatorily applying affirmative signals and their corresponding negative signals to the suppressing electrodes of the individual circuit elements and subsequently applying pulse-coded signals of affirmations and negations to the generating electrodes of the circuit elements which have had the affirmative and corresponding negative signals applied in advance thereto.
摘要翻译：在由设置有高电场域产生电极和高电场域抑制电极的多个电路元件构成的高电场域装置中，可以通过准备应用肯定信号及其对应的负信号来执行逻辑运算到各个电路元件的抑制电极，并且随后向已经具有预先施加的肯定和相应的负信号的电路元件的发生电极施加肯定和否定的脉冲编码信号。

4. 发明授权

US4090155A Transmission line for electromagnetic wave 失效
标题翻译：电磁波传输线
公开(公告)号：US4090155A
公开(公告)日：1978-05-16
申请号：US668986
申请日：1976-03-22
申请人： Hiroshi Tateno , Shoei Kataoka , Nobuo Hashizume , Yasuo Komamiya
发明人： Hiroshi Tateno , Shoei Kataoka , Nobuo Hashizume , Yasuo Komamiya
IPC分类号： H01L47/00 , H01P3/08 , H01P1/22 , H01P1/15 , H03F3/54
CPC分类号： H01L47/00 , H01P3/08
摘要： A transmission line is disclosed which comprises a conductive layer, a resistive semiconductor layer disposed on the conductive layer and a blocking electrode disposed on the resistive semiconductor layer. By applying a biasing voltage between the blocking electrode and the conductive layer, a depletion layer is produced in the resistive semiconductor layer, the depletion layer formed in the semiconductor layer being used as a medium for transmission of electromagnetic wave.
摘要翻译：公开了一种传输线，其包括导电层，设置在导电层上的电阻半导体层和设置在电阻半导体层上的阻挡电极。通过在隔离电极和导电层之间施加偏置电压，在电阻半导体层中产生耗尽层，在半导体层中形成的耗尽层用作用于传输电磁波的介质。

5. 发明授权

US08766208B2 Secondary-electron detector and charged particle beam apparatus 有权
标题翻译：二次电子探测器和带电粒子束装置
公开(公告)号：US08766208B2
公开(公告)日：2014-07-01
申请号：US13336946
申请日：2011-12-23
申请人： Hiroshi Tateno
发明人： Hiroshi Tateno
IPC分类号： H01J3/14 , G01N23/00
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/2443 , H01J2237/2448
摘要： A scintillator 21 is disposed on an incidence side 23a of a photomultiplier 23. A scintillator cap 22 for introducing electrons into the scintillator 21 is disposed around the scintillator 21. The photomultiplier 23 is disposed in a sample chamber 17 with a vacuum seal formed around the photomultiplier 23. An insulating member 25 made of an opaque material is disposed between the scintillator cap 22 and the photomultiplier 23. The insulating member 25 provides insulation between the scintillator cap 22 and the photomultiplier 23. The lateral circumference of the photomultiplier 23 is covered to prevent light from entering the photomultiplier 23. A band filter 27 for blocking the illumination light of an optical microscope 30 is disposed between the scintillator 21 and the incidence side 23a of the photomultiplier 23 to make it possible to conduct simultaneous observations by using the electrons and the optical microscope.
摘要翻译：闪烁体21设置在光电倍增器23的入射侧23a上。用于将电子引入闪烁体21的闪烁体帽22设置在闪烁体21的周围。光电倍增管23设置在样品室17中，真空密封件围绕光电倍增器23.由闪烁体盖22和光电倍增管23之间设置由不透明材料构成的绝缘构件25.绝缘构件25提供闪烁体盖22和光电倍增管23之间的绝缘。光电倍增管23的横向周长被覆盖防止光进入光电倍增管23.用于阻挡光学显微镜30的照明光的带状滤光器27设置在闪光体21和光电倍增器23的入射侧23a之间，以便可以通过使用电子进行同时观测，光学显微镜。

6. 发明授权

US4023196A Negative resistance element composed of a semiconductor element 失效
标题翻译：负电阻元件由半导体元件组成
公开(公告)号：US4023196A
公开(公告)日：1977-05-10
申请号：US852550
申请日：1969-08-25
申请人： Shoei Kataoka , Hiroshi Tateno
发明人： Shoei Kataoka , Hiroshi Tateno
IPC分类号： H01L45/00 , H01L47/02 , H01L27/24 , H01L27/26 , H01L29/66
CPC分类号： H01L47/02
摘要： An improved negative resistance element is disclosed, the element being composed of a semiconductor element and having an effective negative electroconductivity in a high electric field, the element being constructed so that the sectional area of the region near the anode is made larger than the sectional area of the other regions of the element, whereby the distribution of the high electric field in the interior of the element is made uniform along the element, that is, from the region near the anode toward the region near the cathode to thereby broaden the region having an effective negative resistance. Furthermore, and in an alternative embodiment, there is disclosed a negative resistance element in whch the region near the cathode besides the region near the anode is also made to have a larger sectional area than the other regions of the element.
摘要翻译：公开了一种改进的负电阻元件，该元件由半导体元件组成并且在高电场中具有有效的负导电性，该元件构造成使得靠近阳极的区域的截面积大于截面积的元件的其它区域的分布，从而使元件内部的高电场分布沿元件均匀，即从阳极附近的区域朝向阴极附近的区域均匀，从而拓宽具有有效的负面阻力。此外，在替代实施例中，公开了除阳极附近的区域之外的阴极附近的负电阻元件还具有比元件的其它区域更大的截面面积。

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