会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US08085585B2
    • 2011-12-27
    • US13158098
    • 2011-06-10
    • Hiroyuki NagashimaHirofumi Inoue
    • Hiroyuki NagashimaHirofumi Inoue
    • G11C11/00
    • G11C8/14G11C5/02G11C5/063G11C13/0004G11C13/0007G11C13/0028G11C2213/31G11C2213/71G11C2213/72H01L2924/0002H01L2924/00
    • A semiconductor memory device includes a memory block having a three-dimensional memory cell array structure in which memory cell arrays are stacked, the memory cell array including: a plurality of first interconnections which are parallel to one another; a plurality of second interconnections which are formed so as to intersect with the plurality of first interconnections, the second interconnections being parallel to one another; and a memory cell which is disposed in each intersection portion of the first interconnection and the second interconnection, one end of the memory cell being connected to the first interconnection, the other end of the memory cell being connected to the second interconnection. The first interconnection disposed between the adjacent memory cell arrays is shared by memory cells above and below the first interconnection, and the vertically-overlapping first interconnections are connected to each other.
    • 一种半导体存储器件包括具有堆叠存储单元阵列的三维存储单元阵列结构的存储块,所述存储单元阵列包括:彼此平行的多个第一互连; 多个第二互连形成为与所述多个第一互连相交,所述第二互连彼此平行; 以及存储单元,其设置在所述第一互连和所述第二互连的每个交叉部分中,所述存储单元的一端连接到所述第一互连,所述存储单元的另一端连接到所述第二互连。 设置在相邻存储单元阵列之间的第一互连由第一互连之上和之下的存储单元共享,并且垂直重叠的第一互连彼此连接。
    • 6. 发明申请
    • METHOD OF MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICES
    • 制造非易失性半导体存储器件的方法
    • US20090137112A1
    • 2009-05-28
    • US12275741
    • 2008-11-21
    • Hideyuki TABATAHirofumi InoueHiroyuki NagashimaKohichi Kubo
    • Hideyuki TABATAHirofumi InoueHiroyuki NagashimaKohichi Kubo
    • H01L21/768
    • H01L27/2418H01L27/2409H01L27/2481H01L45/085H01L45/1233H01L45/147H01L45/1675
    • A method of manufacturing nonvolatile semiconductor memory devices comprises forming a first wiring material; and stacking memory cell materials on the first wiring material, which configure memory cells each including a variable resistor operative to nonvolatilely store information in accordance with variation in resistance. The method also comprises forming a plurality of first parallel trenches in the first wiring material and the stacked memory cell materials, the first trenches extending in a first direction, thereby forming first lines extending in the first direction and memory cell materials self-aligned with the first lines and separated by the first trenches. The method further comprises burying an interlayer insulator in the first trenches to form a block body and stacking a second wiring material on the block body. The method also comprises forming a plurality of second parallel trenches in the block body with the second wiring material stacked thereon, the second trenches extending in a second direction crossing the first direction and having a depth reaching the upper surface of the first wiring material, thereby forming second lines extending in the second direction and memory cells self-aligned with the second lines and separated by the first and second trenches.
    • 制造非易失性半导体存储器件的方法包括:形成第一布线材料; 以及在第一布线材料上堆叠存储单元材料,其构造每个包括可变电阻器的存储单元,其可操作以根据电阻的变化来非易失性地存储信息。 该方法还包括在第一布线材料和堆叠的存储单元材料中形成多个第一平行沟槽,第一沟槽沿第一方向延伸,从而形成沿第一方向延伸的第一线和与第一方向自对准的存储单元材料 第一条线和第一条沟分开。 该方法还包括在第一沟槽中埋设层间绝缘体以形成块体并将第二布线材料堆叠在块体上。 该方法还包括在堆叠在其上的第二布线材料的块体中形成多个第二平行沟槽,第二沟槽沿与第一方向交叉的第二方向延伸并且具有到达第一布线材料的上表面的深度,从而 形成沿着第二方向延伸的第二线和与第二线自对准并由第一和第二沟槽隔开的存储器单元。