专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20220367144A1 Method for Producing Lamella, Analysis System and Method for Analyzing Sample 有权
公开(公告)号：US20220367144A1
公开(公告)日：2022-11-17
申请号：US17773433
申请日：2019-11-20
申请人： Hitachi High-Tech Corporation
发明人： Atsushi SAWADA , Tsunenori NOMAGUCHI
IPC分类号： H01J37/20 , H01J37/305 , H01J37/26
摘要： A lamella 10 including an analysis portion 11 and a cutout portion 12 separated from the analysis portion 11 is produced. When a plurality of the lamellae 10 are transported to a lamella grid 20, the plurality of lamellae 10 are supported by a support portion 22 protruding from a surface of a substrate 21, and are mounted adjacent to each other in a Z direction. At this time, the cutout portion 12 prevents the analysis portion 11 from damage.

2. 发明申请

US20220246385A1 Charged Particle Beam Device 有权
公开(公告)号：US20220246385A1
公开(公告)日：2022-08-04
申请号：US17725276
申请日：2022-04-20
申请人： HITACHI HIGH-TECH CORPORATION , Japan Fine Ceramics Center
发明人： Tsunenori NOMAGUCHI , Shunichi MOTOMURA , Tadahiro KAWASAKI , Takeharu KATO , Ryuji YOSHIDA
IPC分类号： H01J37/09 , H01J37/10 , H01J37/153 , H01J37/244
摘要： As a device for correcting positive spherical aberration of an electromagnetic lens for a charged particle beam, a spherical aberration correction device combining a hole electrode and a ring electrode is known. In this spherical aberration correction device, when a voltage is applied between the hole electrode and the ring electrode, the focus of the charged particle beam device changes due to the convex lens effect generated in the hole electrode. Therefore, in a charged particle beam device including a charged particle beam source which generates a charged particle beam, a charged particle beam aperture having a ring shape, and a charged particle beam aperture power supply which applies a voltage to the charged particle beam aperture, the charged particle beam aperture power supply is configured to apply, to the charged particle beam aperture, a voltage having a polarity opposite to a polarity of charges of the charged particle beam.

3. 发明申请

US20210190703A1 Charged Particle Beam Device, Method for Processing Sample, and Observation Method 有权
公开(公告)号：US20210190703A1
公开(公告)日：2021-06-24
申请号：US17053296
申请日：2018-05-15
申请人： Hitachi High-Tech Corporation
发明人： Tsunenori NOMAGUCHI , Hiromi MISE
IPC分类号： G01N23/04 , H01J37/26 , H01J37/244 , H01J37/20 , G01N23/06
摘要： To provide, in observation of a sample that requires a movement between various devices, a charged particle beam device, a method for processing the sample, and an observation method which facilitate the movement between the devices. The charged particle beam device that processes an observation target on the sample using a charged particle beam includes: a sample stage on which the sample is placed; an observation unit configured to observe the observation target; and a writing unit configured to write information of the observation target in a writing position of the sample.

4. 发明申请

US20230126577A1 Transfer Device and Analysis System 有权
公开(公告)号：US20230126577A1
公开(公告)日：2023-04-27
申请号：US17917973
申请日：2020-04-15
申请人： Hitachi High-Tech Corporation
发明人： Naofumi KOBAYASHI , Kenichi NISHINAKA , Tsunenori NOMAGUCHI
IPC分类号： H01J37/20 , H01J37/22
摘要： Provided is a technique capable of shortening observation throughput of a sample. A transfer device 2 includes a holder 24 configured to hold a mesh MS on which a sample to be analyzed using a charged particle beam device 3 is mounted, a position information acquisition function configured to acquire first information about a positional relationship between the mesh MS and the holder 24, and a position information output function configured to output the first information to the charged particle beam device 3.

5. 发明申请

US20230055155A1 Semiconductor Analysis System 有权
公开(公告)号：US20230055155A1
公开(公告)日：2023-02-23
申请号：US17797304
申请日：2020-02-27
申请人： Hitachi High-Tech Corporation
发明人： Tsunenori NOMAGUCHI , Yudai KUBO , Hiroyuki CHIBA
IPC分类号： G01N23/041 , G01N1/28 , H01L21/02 , G01N23/20025 , H01J37/34 , H01J37/26
摘要： A semiconductor analysis system includes a machining device that machines a semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, and outputs the updated acquisition conditions to the transmission electron microscope device

6. 发明申请

US20220238296A1 Charged Particle Beam Apparatus 有权
公开(公告)号：US20220238296A1
公开(公告)日：2022-07-28
申请号：US17595282
申请日：2019-05-15
申请人： Hitachi High-Tech Corporation
发明人： Shunichi MOTOMURA , Tsunenori NOMAGUCHI
IPC分类号： H01J37/09 , H01J37/153
摘要： Provided is a charged particle beam apparatus capable of stably obtaining a spherical aberration correction effect. The charged particle beam apparatus includes: a charged particle beam aperture stop 121 and an electrode 122 that are arranged on an optical axis between the charged particle beam source 101 and the objective lens 105; and a power supply 108 that applies a voltage between the charged particle beam aperture stop 121 and the electrode 122, in which the voltage that is applied from the electrode to the charged particle beam aperture stop by the power supply is a voltage having a polarity opposite to a charge of the charged particle beam, the electrode 122 includes an annular aperture 205, and the charged particle beam aperture stop 121 includes a plurality of apertures 201 that are arranged at positions overlapping the annular aperture 205 of the electrode 122 when viewed in a direction Z along the optical axis.

7. 发明申请

US20230063192A1 Semiconductor Analysis System 有权
公开(公告)号：US20230063192A1
公开(公告)日：2023-03-02
申请号：US17797225
申请日：2020-02-27
申请人： Hitachi High-Tech Corporation
发明人： Yudai KUBO , Tsunenori NOMAGUCHI , Hiroyuki CHIBA
IPC分类号： H01L21/67 , H01J37/28 , H01J37/244 , H01J37/26 , H01J37/20 , H01J37/305 , G05B19/418
摘要： A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

8. 发明申请

US20210217580A1 CHARGED PARTICLE BEAM DEVICE 有权
公开(公告)号：US20210217580A1
公开(公告)日：2021-07-15
申请号：US17058259
申请日：2018-06-12
申请人： HITACHI HIGH-TECH CORPORATION
发明人： Kazuo OOTSUGA , Yuta IMAI , Tsunenori NOMAGUCHI
IPC分类号： H01J37/22 , H01J37/28 , H01J37/244
摘要： A charged particle beam device includes: a charged particle beam source configured to generate a charged particle beam with which a sample is irradiated; a charged particle detection unit configured to detect a charged particle generated when the sample is irradiated with the charged particle beam; an intensity data generation unit configured to generate intensity data of the charged particle detected by the charged particle detection unit; a pulse-height value data generation unit configured to generate pulse-height value data of the charged particle detected by the charged particle detection unit; and an output unit configured to output a first image of the sample based on the intensity data and a second image of the sample based on the pulse-height value data.

9. 发明申请

US20210118641A1 Charged Particle Beam Device 有权
公开(公告)号：US20210118641A1
公开(公告)日：2021-04-22
申请号：US17043560
申请日：2018-03-29
申请人： Hitachi High-Tech Corporation , Japan Fine Ceramics Center
发明人： Tsunenori NOMAGUCHI , Shunichi MOTOMURA , Tadahiro KAWASAKI , Takeharu KATO , Ryuji YOSHIDA
IPC分类号： H01J37/09 , H01J37/10 , H01J37/244 , H01J37/153
摘要： As a device for correcting positive spherical aberration of an electromagnetic lens for a charged particle beam, a spherical aberration correction device combining a hole electrode and a ring electrode is known. In this spherical aberration correction device, when a voltage is applied between the hole electrode and the ring electrode, the focus of the charged particle beam device changes due to the convex lens effect generated in the hole electrode. Therefore, in a charged particle beam device including a charged particle beam source which generates a charged particle beam, a charged particle beam aperture having a ring shape, and a charged particle beam aperture power supply which applies a voltage to the charged particle beam aperture, the charged particle beam aperture power supply is configured to apply, to the charged particle beam aperture, a voltage having a polarity opposite to a polarity of charges of the charged particle beam.

10. 发明申请

US20210035770A1 Charged Particle Beam Apparatus 有权
公开(公告)号：US20210035770A1
公开(公告)日：2021-02-04
申请号：US17042659
申请日：2018-03-29
申请人： Hitachi High-Tech Corporation
发明人： Kenichi NISHINAKA , Tsunenori NOMAGUCHI
IPC分类号： H01J37/09 , H01J37/10 , H01J37/244
摘要： When a charged particle beam aperture having an annular shape is used, since a charged particle beam directly above the optical axis having the highest current density in the charged particle beam is blocked, it is difficult to dispose the charged particle beam aperture at an optimal mounting position. An charged particle beam apparatus includes a charged particle beam source that generates a charged particle beam, a charged particle beam aperture, a charged particle beam aperture power supply that applies a voltage to the charged particle beam aperture, an objective lens for focusing the charged particle beam on a sample, a detector that detects secondary charged particles emitted by irradiating the sample with the charged particle beam, a computer that forms a charged particle beam image based on the secondary charged particles detected by the detector, in which the position of the charged particle beam aperture is set so that the charged particle beam image does not move and changes concentrically in synchronization with the AC voltage, in a state where an AC voltage is applied to the charged particle beam aperture by the charged particle beam aperture power supply.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式