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    • 5. 发明授权
    • Charged particle beam apparatus
    • 带电粒子束装置
    • US09455119B2
    • 2016-09-27
    • US14665391
    • 2015-03-23
    • HITACHI HIGH-TECH SCIENCE CORPORATION
    • Makoto SatoTatsuya AsahataMasahiro KiyoharaIkuko Nakatani
    • H01J37/26G21K5/04H01J37/28
    • H01J37/28H01J37/265H01J2237/30438
    • A charged particle beam apparatus is provided with a controller configured to control other components and perform operations including: an irradiating operation to irradiate a first position of a sample with a charged particle beam while gradually changing a scan range of the charged particle beam to move from a first position; a first image acquiring operation to acquire an image of each portion where the charged particle beam moves; an indicator forming operation to form an indicator at a second position by the charged particle beam when the scan range of the charged particle beam reaches the second position; a second image acquiring operation to acquire an image of the second position in a state where the indicator is formed; and an adjusting operation to adjust relative position between the stage and the scan range of the charged particle beam.
    • 带电粒子束装置设置有控制器,其被配置为控制其他部件并执行操作,包括:照射操作,用于在逐渐改变带电粒子束的扫描范围以从 第一职位 第一图像获取操作,用于获取所述带电粒子束移动的每个部分的图像; 指示器形成操作,当带电粒子束的扫描范围达到第二位置时,通过带电粒子束在第二位置形成指示器; 第二图像获取操作,用于在形成指示器的状态下获取第二位置的图像; 以及调整操作,以调整带电粒子束的阶段和扫描范围之间的相对位置。
    • 6. 发明授权
    • Charged particle beam apparatus and sample processing method using charged particle beam apparatus
    • 带电粒子束装置和采用带电粒子束装置的样品处理方法
    • US09202671B2
    • 2015-12-01
    • US14220981
    • 2014-03-20
    • HITACHI HIGH-TECH SCIENCE CORPORATION
    • Xin ManAtsushi UemotoTatsuya Asahata
    • H01J37/252H01J37/26H01J37/30
    • H01J37/3002H01J37/252H01J37/26H01J37/304H01J37/3056H01J2237/30455
    • A charged particle beam apparatus includes a sample stage, a focused ion beam column, a scattered electron detector that detects backscattered electrons generated from a cross-section of a sample, a crystal orientation information generation unit that generates crystal orientation information on a predetermined region of the cross-section, and an angle calculation unit that calculates attachment angles of the sample stage, corresponding to a direction of the cross-section. In response to receiving input of information indicating that the crystal orientation information on the region displayed on a display unit is changed to aimed second crystal orientation information, the angle calculation unit calculates the attachment angles corresponding to the direction of the cross-section for generating the second crystal orientation information, and the focused ion beam column performs etching processing on the cross-section at the calculated attachment angles.
    • 带电粒子束装置包括:样品台,聚焦离子束柱,检测从样品的横截面产生的反向散射电子的散射电子检测器;晶体取向信息生成单元,其在预定区域上生成晶体取向信息; 横截面,以及角度计算单元,其计算与横截面方向对应的样品台的附着角度。 响应于接收到指示将显示在显示单元上的区域的晶体取向信息改变为目标第二晶体取向信息的信息的输入,角度计算单元计算与用于生成显示单元的横截面的方向相对应的附着角度 第二晶体取向信息,聚焦离子束列以计算出的安装角度对横截面进行蚀刻处理。