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1. 发明授权

US08553371B2 TMR reader without DLC capping structure 有权
标题翻译： TMR读卡器无DLC封盖结构
公开(公告)号：US08553371B2
公开(公告)日：2013-10-08
申请号：US12954508
申请日：2010-11-24
申请人： Honglin Zhu , Liubo Hong , Hicham M. Sougrati , Quang Le , Jui-Lung Li , Chando Park
发明人： Honglin Zhu , Liubo Hong , Hicham M. Sougrati , Quang Le , Jui-Lung Li , Chando Park
IPC分类号： G11B5/39
CPC分类号： G11B5/3163 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B5/3932
摘要： Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.
摘要翻译：本文的实施方案通常涉及TMR读取器及其制造方法。本文讨论的实施例公开了TMR读取器，其利用了避免在传感器结构上以及硬偏置层上使用DLC层的结构。传感器结构上的封盖结构用作传感器结构的保护层和CMP停止层。硬偏置封盖结构既用作硬偏置层的保护结构又用作CMP停止层。没有DLC的封盖结构减少了第二屏蔽层中的凹口的形成，使得第二屏蔽层基本上是平的。

2. 发明申请

US20120127616A1 TMR READER WITHOUT DLC CAPPING STRUCTURE 有权
标题翻译： TMR读取器，无DLC封装结构
公开(公告)号：US20120127616A1
公开(公告)日：2012-05-24
申请号：US12954508
申请日：2010-11-24
申请人： HONGLIN ZHU , Liubo Hong , Hicham M. Sougrati , Quang Le , Jui-Lung Li , Chando Park
发明人： HONGLIN ZHU , Liubo Hong , Hicham M. Sougrati , Quang Le , Jui-Lung Li , Chando Park
IPC分类号： G11B5/33 , B44C1/22 , B05D5/12
CPC分类号： G11B5/3163 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B5/3932
摘要： Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.
摘要翻译：本文的实施方案通常涉及TMR读取器及其制造方法。本文讨论的实施例公开了使用避免在传感器结构上以及硬偏压层上使用DLC层的结构的TMR读取器。传感器结构上的封盖结构用作传感器结构的保护层和CMP停止层。硬偏置封盖结构既用作硬偏置层的保护结构又用作CMP停止层。没有DLC的封盖结构减少了第二屏蔽层中的凹口的形成，使得第二屏蔽层基本上是平的。

3. 发明申请

US20110146061A1 METHOD FOR MANUFACTURING A MAGNETORESISTIVE SENSOR HAVING A FLAT SHIELD 有权
标题翻译：用于制造具有平板屏蔽的磁传感器的方法
公开(公告)号：US20110146061A1
公开(公告)日：2011-06-23
申请号：US12645323
申请日：2009-12-22
申请人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
发明人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/3912 , G11B5/398 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield (deposited there-over) to be very thin.
摘要翻译：一种用于制造磁阻传感器的方法，其导致传感器具有非常平坦的顶部磁屏蔽。该过程包括沉积多个传感器层，然后在传感器层上沉积薄的高密度碳CMP停止层，并在CMP停止层上形成掩模。执行离子铣削来定义传感器。然后沉积薄的绝缘层和磁性硬偏置层。进行化学机械抛光以除去掩模，并执行反应离子蚀刻以除去剩余的碳CMP停止层。因为CMP停止层非常致密且硬，所以可以使其非常薄。这意味着当通过反应离子蚀刻去除时，在传感器上几乎没有凹口，从而允许上部屏蔽（沉积在其上）非常薄。

4. 发明授权

US08296930B2 Method for manufacturing a magnetoresistive sensor having a flat shield 有权
标题翻译：具有平面屏蔽的磁阻传感器的制造方法
公开(公告)号：US08296930B2
公开(公告)日：2012-10-30
申请号：US12645323
申请日：2009-12-22
申请人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
发明人： Shin Funada , Quang Le , Thomas L. Leong , Jui-Lung Li , Chang-Man Park , Ning Shi , Hicham M. Sougrati
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , G11B5/112 , G11B5/3912 , G11B5/398 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield to be very thin.
摘要翻译：一种用于制造磁阻传感器的方法，其导致传感器具有非常平坦的顶部磁屏蔽。该过程包括沉积多个传感器层，然后在传感器层上沉积薄的高密度碳CMP停止层，并在CMP停止层上形成掩模。执行离子铣削来定义传感器。然后沉积薄的绝缘层和磁性硬偏置层。进行化学机械抛光以除去掩模，并执行反应离子蚀刻以除去剩余的碳CMP停止层。因为CMP停止层非常致密且硬，所以可以使其非常薄。这意味着当通过反应离子蚀刻去除时，在传感器上几乎没有凹口，从而允许上部屏蔽（沉积在其上）非常薄。

5. 发明申请

US20130163124A1 MAGNETIC READ SENSOR HAVING FLAT SHIELD PROFILE 审中-公开
标题翻译：磁性读取传感器具有平面屏蔽轮廓
公开(公告)号：US20130163124A1
公开(公告)日：2013-06-27
申请号：US13335657
申请日：2011-12-22
申请人： Hicham M. Sougrati , Quang Le , Honglin Zhu
发明人： Hicham M. Sougrati , Quang Le , Honglin Zhu
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetic read sensor having a flat shield for improved gap thickness definition and control. The magnetic read head includes a sensor stack and hard bias layer formed at either side of the sensor stack. A SiNx hard bias capping layer is formed over the hard bias layers between the hard bias structure and the upper magnetic shield. The hard bias capping layer has an upper surface that has been planarized by chemical mechanical polishing that is co-planar with an upper surface of the sensor stack. The read sensor is constructed by a method wherein the hard bias capping layer is constructed of a material (e.g. SiNx) that is also used as a CMP stop layer and that can be planarized by chemical mechanical polishing while having some resistance to removal by chemical mechanical polishing.
摘要翻译：具有平面屏蔽的磁读取传感器，用于改善间隙厚度的定义和控制。磁读头包括传感器堆叠和形成在传感器堆叠的任一侧的硬偏置层。在硬偏压结构和上磁屏蔽之间的硬偏压层上形成SiNx硬偏压盖层。硬偏压盖层具有通过与传感器堆叠的上表面共面的化学机械抛光而被平坦化的上表面。读取传感器通过一种方法构成，其中硬偏压盖层由也用作CMP停止层的材料（例如SiNx）构成，并且可以通过化学机械抛光进行平面化，同时具有通过化学机械去除的一些阻力抛光。

6. 发明授权

US08082658B2 Controlled lapping for an ABS damascene process 有权
标题翻译： ABS镶嵌工艺的控制研磨
公开(公告)号：US08082658B2
公开(公告)日：2011-12-27
申请号：US12036478
申请日：2008-02-25
申请人： Thomas D. Boone, Jr. , Glenn P. Gee , Paul A. Goddu , John P. Herber , Hicham M. Sougrati , Huey-Ming Tzeng
发明人： Thomas D. Boone, Jr. , Glenn P. Gee , Paul A. Goddu , John P. Herber , Hicham M. Sougrati , Huey-Ming Tzeng
IPC分类号： H04R31/00
CPC分类号： B24B37/042 , B24B49/04 , B24B49/10 , G11B5/3169 , G11B5/3173 , G11B5/3193 , Y10T29/49032 , Y10T29/49036 , Y10T29/49037 , Y10T29/49041 , Y10T29/49046
摘要： Methods of lapping rows of recording heads are described after an air bearing surface (ABS) damascene process is performed. The ABS damascene process uses a selective etching process to form voids in the row of recording heads where conductive material forms a feature in the recording head, such as a wrap around shield. The conductive material is then deposited on the ABS of the row to fill the voids, and the row is lapped. According to methods provided herein, the resistance of one or more lapping guides in the row of recording heads is monitored to determine when the conductive material is removed by the lapping process. When the monitored resistance indicates that the conductive material is removed, the lapping process is stopped. The resistance across one or more lapping guides may also be used to control the lapping process to uniformly lap the conductive material from the ABS.
摘要翻译：在执行空气轴承表面（ABS）镶嵌工艺之后描述研磨记录头行的方法。 ABS镶嵌工艺使用选择性蚀刻工艺在记录头的行中形成空隙，其中导电材料在记录头中形成特征，例如环绕护罩。然后将导电材料沉积在该行的ABS上以填充空隙，并且研磨该列。根据本文提供的方法，监测记录头行中的一个或多个研磨引导件的电阻，以确定通过研磨过程去除导电材料的时间。当被监测的电阻表示导电材料被去除时，研磨过程停止。跨越一个或多个研磨引导件的电阻也可用于控制研磨过程以均匀地从ABS吸收导电材料。

7. 发明授权

US08984741B2 Differentiated liftoff process for ultra-shallow mask defined narrow trackwidth magnetic sensor 有权
标题翻译：用于超浅掩模定义的窄轨道磁传感器的差分提升过程
公开(公告)号：US08984741B2
公开(公告)日：2015-03-24
申请号：US13458374
申请日：2012-04-27
申请人： Yi Zheng , Guomin Mao , Hicham M. Sougrati , Xiaozhong Dang
发明人： Yi Zheng , Guomin Mao , Hicham M. Sougrati , Xiaozhong Dang
IPC分类号： G11B5/127 , H04R31/00 , G11B5/31 , G11B5/39
CPC分类号： G11B5/3163 , G11B5/398 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magnetic read sensor allows for the construction of a very narrow trackwidth sensor while avoiding problems related to mask liftoff and shadowing related process variations across a wafer. The process involves depositing a plurality of sensor layers and forming a first mask structure. The first mask structure has a relatively large opening that encompasses a sensor area and an area adjacent to the sensor area where a hard bias structure can be deposited. A second mask structure is formed over the first mask structure and includes a first portion that is configured to define a sensor dimension and a second portion that is over the first mask structure in the field area.
摘要翻译：用于制造磁读取传感器的方法允许构造非常窄的轨道宽度传感器，同时避免与晶片上的掩模剥离和遮蔽相关的工艺变化相关的问题。该方法包括沉积多个传感器层并形成第一掩模结构。第一掩模结构具有相对较大的开口，其包围传感器区域和邻近传感器区域的区域，其中可以沉积硬偏压结构。第二掩模结构形成在第一掩模结构之上，并且包括被配置为限定传感器尺寸的第一部分和位于场区域中的第一掩模结构之上的第二部分。

8. 发明申请

US20130284693A1 DIFFERENTIATED LIFTOFF PROCESS FOR ULTRA-SHALLOW MASK DEFINED NARROW TRACKWIDTH MAGNETIC SENSOR 有权
标题翻译：用于超薄面板定义的窄轨跟踪磁传感器的差分提升过程
公开(公告)号：US20130284693A1
公开(公告)日：2013-10-31
申请号：US13458374
申请日：2012-04-27
申请人： Yi Zheng , Guomin Mao , Hicham M. Sougrati , Xiaozhong Dang
发明人： Yi Zheng , Guomin Mao , Hicham M. Sougrati , Xiaozhong Dang
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/398 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magnetic read sensor allows for the construction of a very narrow trackwidth sensor while avoiding problems related to mask liftoff and shadowing related process variations across a wafer. The process involves depositing a plurality of sensor layers and forming a first mask structure. The first mask structure has a relatively large opening that encompasses a sensor area and an area adjacent to the sensor area where a hard bias structure can be deposited. A second mask structure is formed over the first mask structure and includes a first portion that is configured to define a sensor dimension and a second portion that is over the first mask structure in the field area.
摘要翻译：用于制造磁读取传感器的方法允许构造非常窄的轨道宽度传感器，同时避免与晶片上的掩模剥离和遮蔽相关的工艺变化相关的问题。该方法包括沉积多个传感器层并形成第一掩模结构。第一掩模结构具有相对较大的开口，其包围传感器区域和邻近传感器区域的区域，其中可以沉积硬偏压结构。第二掩模结构形成在第一掩模结构之上，并且包括被配置为限定传感器尺寸的第一部分和位于场区域中的第一掩模结构之上的第二部分。

9. 发明申请

US20090211081A1 CONTROLLED LAPPING FOR AN ABS DAMASCENE PROCESS 有权
标题翻译： ABS吸附过程的控制拉伸
公开(公告)号：US20090211081A1
公开(公告)日：2009-08-27
申请号：US12036478
申请日：2008-02-25
申请人： Thomas D. Boone, JR. , Glenn P. Gee , Paul A. Goddu , John P. Herber , Hicham M. Sougrati , Huey-Ming Tzeng
发明人： Thomas D. Boone, JR. , Glenn P. Gee , Paul A. Goddu , John P. Herber , Hicham M. Sougrati , Huey-Ming Tzeng
IPC分类号： G11B5/127 , B24B49/10 , B24B49/04
CPC分类号： B24B37/042 , B24B49/04 , B24B49/10 , G11B5/3169 , G11B5/3173 , G11B5/3193 , Y10T29/49032 , Y10T29/49036 , Y10T29/49037 , Y10T29/49041 , Y10T29/49046
摘要： Methods of lapping rows of recording heads are described after an air bearing surface (ABS) damascene process is performed. The ABS damascene process uses a selective etching process to form voids in the row of recording heads where conductive material forms a feature in the recording head, such as a wrap around shield. The conductive material is then deposited on the ABS of the row to fill the voids, and the row is lapped. According to methods provided herein, the resistance of one or more lapping guides in the row of recording heads is monitored to determine when the conductive material is removed by the lapping process. When the monitored resistance indicates that the conductive material is removed, the lapping process is stopped. The resistance across one or more lapping guides may also be used to control the lapping process to uniformly lap the conductive material from the ABS.
摘要翻译：在执行空气轴承表面（ABS）镶嵌工艺之后描述研磨记录头行的方法。 ABS镶嵌工艺使用选择性蚀刻工艺在记录头的行中形成空隙，其中导电材料在记录头中形成特征，例如环绕护罩。然后将导电材料沉积在该行的ABS上以填充空隙，并且研磨该列。根据本文提供的方法，监测记录头行中的一个或多个研磨引导件的电阻，以确定通过研磨过程去除导电材料的时间。当被监测的电阻表示导电材料被去除时，研磨过程停止。跨越一个或多个研磨引导件的电阻也可用于控制研磨过程以均匀地从ABS吸收导电材料。

10. 发明申请

US20080273265A1 Determining smear of a hard disk drive slider 审中-公开
标题翻译：确定硬盘驱动器滑块的拖尾
公开(公告)号：US20080273265A1
公开(公告)日：2008-11-06
申请号：US11800262
申请日：2007-05-03
申请人： Glenn P. Gee , David J. Seagle , Hicham M. Sougrati , Jila Tabib , Xiao Z. Wu
发明人： Glenn P. Gee , David J. Seagle , Hicham M. Sougrati , Jila Tabib , Xiao Z. Wu
IPC分类号： G11B21/02
CPC分类号： G11B5/3166 , G11B5/102 , G11B5/3169
摘要： A disk drive head slider for a magnetic disk drive is provided. The head slider includes a tunnel magnetic resistance device for reading data on a magnetic disk and a dedicated sensor for measuring resistance wherein the resistance corresponds to a level of smear associated with the head slider.
摘要翻译：提供了用于磁盘驱动器的磁盘驱动器磁头滑块。头滑动器包括用于读取磁盘上的数据的隧道磁阻装置和用于测量电阻的专用传感器，其中电阻对应于与磁头滑块相关联的拖尾水平。

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