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    • 5. 发明申请
    • Complementary metal oxide semiconductor voltage controlled oscillator
    • 互补金属氧化物半导体压控振荡器
    • US20060197621A1
    • 2006-09-07
    • US11355976
    • 2006-02-17
    • Sang-yoon JeonHeung-bae LeeSung-jae Jung
    • Sang-yoon JeonHeung-bae LeeSung-jae Jung
    • H03B5/08
    • H03B5/1228H03B5/1215H03B5/1243H03B2200/0062
    • A complementary metal oxide semiconductor voltage controlled oscillator is provided. The voltage controlled oscillator includes an LC tank which is supplied with a power supply voltage, the LC tank oscillating at a certain frequency; a negative resistor including first and second N-channel metal oxide semiconductor field effect transistors (NMOS FETs) to sustain the oscillation of the LC tank; a direct current block to remove a direct current component from the power supply voltage; an alternating current block to apply an alternating current voltage to the gates of the first and second NMOS FETs; a first current mirror including third and fourth NMOS FETs and allowing a current to symmetrically flow in the voltage controlled oscillator, a drain and the gate of the third NMOS FET being connected to a reference voltage supply; and the reference voltage supply applying a direct current voltage to the first current mirror.
    • 提供了互补金属氧化物半导体压控振荡器。 压控振荡器包括一个供应电源电压的LC箱,LC箱以一定的频率振荡; 包括第一和第二N沟道金属氧化物半导体场效应晶体管(NMOS FET)的负电阻器,以维持LC箱的振荡; 直流电流块,用于从电源电压中去除直流分量; 交流电流块,用于向第一和第二NMOS FET的栅极施加交流电压; 第一电流镜包括第三和第四NMOS FET,并允许电流在压控振荡器中对称地流动,第三NMOS FET的漏极和栅极连接到参考电压源; 并且所述参考电压电源向所述第一电流镜施加直流电压。