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1. 发明申请

US20190043598A1 METHOD OF PROPAGATING MAGNETIC DOMAIN WALL IN MAGNETIC DEVICES 审中-公开
公开(公告)号：US20190043598A1
公开(公告)日：2019-02-07
申请号：US16155158
申请日：2018-10-09
申请人： IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
发明人： Adrien Vaysset , Odysseas Zografos
IPC分类号： G11C19/08 , G11C11/16
CPC分类号： G11C19/0841 , G11C5/063 , G11C11/1673 , G11C11/1675
摘要： The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include at least a first magnetic bus, a second magnetic bus, and an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus.

2. 发明申请

US20180130510A1 METHOD OF PROPAGATING MAGNETIC DOMAIN WALL IN MAGNETIC DEVICES 审中-公开
公开(公告)号：US20180130510A1
公开(公告)日：2018-05-10
申请号：US15807464
申请日：2017-11-08
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Adrien Vaysset
IPC分类号： G11C11/16 , G11C19/08
CPC分类号： G11C11/16 , G11C11/1675 , G11C19/0808 , G11C2207/10 , G11C2207/104
摘要： The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. The magnetic buses include at least a first and a second magnetic bus having opposite magnetization orientations with respect to each other, such that a domain wall separating the opposite magnetization states is pinned in the central region. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus by applying spin orbit and/or transfer torques to the pinned domain wall to alternate the pinned domain wall between two stable configurations, in which each stable configuration corresponds to a different magnetization state of the output magnetic bus in at least a region where the output magnetic bus is joined to the central region.

3. 发明授权

US10236046B2 Method of propagating magnetic domain wall in magnetic devices 有权
公开(公告)号：US10236046B2
公开(公告)日：2019-03-19
申请号：US15807464
申请日：2017-11-08
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Adrien Vaysset
IPC分类号： G11C11/16 , G11C19/08
摘要： The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. The magnetic buses include at least a first and a second magnetic bus having opposite magnetization orientations with respect to each other, such that a domain wall separating the opposite magnetization states is pinned in the central region. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus by applying spin orbit and/or transfer torques to the pinned domain wall to alternate the pinned domain wall between two stable configurations, in which each stable configuration corresponds to a different magnetization state of the output magnetic bus in at least a region where the output magnetic bus is joined to the central region.

4. 发明授权

US09979402B2 Spin torque majority gate device 有权
公开(公告)号：US09979402B2
公开(公告)日：2018-05-22
申请号：US15586165
申请日：2017-05-03
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Adrien Vaysset , Iuliana Radu , Geoffrey Pourtois
IPC分类号： H03K19/23 , H03K19/18 , H01L43/08
CPC分类号： H03K19/23 , H01L43/08 , H03K19/18
摘要： The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon shape having 3N sides, where each input zone adjoins the output zone. The input zones are arranged around the output zone according to a 3N-fold rotational symmetry, where N is a positive integer greater than 0. The input zones are spaced apart from one another by the output zone. The majority gate device additionally comprises a plurality of input controls, where each of the input zones is magnetically coupled to a corresponding one of the plurality of input controls, where each of the input controls is configured to control the magnetization state of the corresponding input zone. The majority gate device further comprises an output sensor magnetically coupled to the output zone, where the output sensor is adapted for sensing the magnetization state of the output zone. Each input zones adjoins the output zone at one of the 3N sides.

5. 发明申请

US20170302280A1 SPIN TORQUE MAJORITY GATE DEVICE 有权
公开(公告)号：US20170302280A1
公开(公告)日：2017-10-19
申请号：US15586165
申请日：2017-05-03
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Adrien Vaysset , luliana Radu , Geoffrey Pourtois
IPC分类号： H03K19/23 , H03K19/18 , H01L43/08
CPC分类号： H03K19/23 , H01L43/08 , H03K19/18
摘要： The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon shape having 3N sides, where each input zone adjoins the output zone. The input zones are arranged around the output zone according to a 3N-fold rotational symmetry, where N is a positive integer greater than 0. The input zones are spaced apart from one another by the output zone. The majority gate device additionally comprises a plurality of input controls, where each of the input zones is magnetically coupled to a corresponding one of the plurality of input controls, where each of the input controls is configured to control the magnetization state of the corresponding input zone. The majority gate device further comprises an output sensor magnetically coupled to the output zone, where the output sensor is adapted for sensing the magnetization state of the output zone. Each input zones adjoins the output zone at one of the 3N sides.

6. 发明授权

US10164077B2 Magnetic majority gate device 有权
公开(公告)号：US10164077B2
公开(公告)日：2018-12-25
申请号：US15693243
申请日：2017-08-31
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Adrien Vaysset , Mauricio Manfrini
IPC分类号： H01L29/66 , H03K19/23 , H03K19/18 , G11C11/16 , B82Y10/00 , H01L29/06
摘要： The disclosed technology relates generally to spintronics, and more particularly to a magnetic majority gate device. In one aspect, a magnetic majority gate device includes a magnetic propagation layer and at least one input transducer. The magnetic propagation layer includes a plurality of magnetic buses configured to guide propagating magnetic domain walls along longitudinal directions corresponding to elongated directions of the magnetic buses. The plurality of magnetic buses includes a plurality of input magnetic buses, where each of the input magnetic buses has a corresponding input site configured to receive a corresponding input magnetic domain wall. At least one input transducer at a corresponding input site is configured to convert a digital input electrical signal into an input magnetic domain wall, such that a magnetization state of the input magnetic domain wall corresponds to a digital logic state of the digital input electrical signal. The at least one input transducer is configured to inject an in-plane electrical current into the corresponding input magnetic bus if the digital logic state is a predetermined digital logic state. The magnetic propagation layer includes a central region at which the magnetic buses converge and are joined together, such that the central region is configured for an interaction of input magnetic domain walls guided by two or more magnetic buses. The central region includes at least one magnetic constriction configured to locally restrict propagation of propagating magnetic domain walls.

7. 发明申请

US20180061970A1 MAGNETIC MAJORITY GATE DEVICE 审中-公开
公开(公告)号：US20180061970A1
公开(公告)日：2018-03-01
申请号：US15693243
申请日：2017-08-31
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Adrien Vaysset , Mauricio Manfrini
IPC分类号： H01L29/66
CPC分类号： H01L29/66984 , B82Y10/00 , G11C11/161 , H01L29/0673 , H03K19/18 , H03K19/23
摘要： The disclosed technology relates generally to spintronics, and more particularly to a magnetic majority gate device. In one aspect, a magnetic majority gate device includes a magnetic propagation layer and at least one input transducer. The magnetic propagation layer includes a plurality of magnetic buses configured to guide propagating magnetic domain walls along longitudinal directions corresponding to elongated directions of the magnetic buses. The plurality of magnetic buses includes a plurality of input magnetic buses, where each of the input magnetic buses has a corresponding input site configured to receive a corresponding input magnetic domain wall. At least one input transducer at a corresponding input site is configured to convert a digital input electrical signal into an input magnetic domain wall, such that a magnetization state of the input magnetic domain wall corresponds to a digital logic state of the digital input electrical signal. The at least one input transducer is configured to inject an in-plane electrical current into the corresponding input magnetic bus if the digital logic state is a predetermined digital logic state. The magnetic propagation layer includes a central region at which the magnetic buses converge and are joined together, such that the central region is configured for an interaction of input magnetic domain walls guided by two or more magnetic buses. The central region includes at least one magnetic constriction configured to locally restrict propagation of propagating magnetic domain walls.

8. 发明授权

US10593414B2 Method of propagating magnetic domain wall in magnetic devices 有权
公开(公告)号：US10593414B2
公开(公告)日：2020-03-17
申请号：US16155158
申请日：2018-10-09
申请人： IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
发明人： Adrien Vaysset , Odysseas Zografos
IPC分类号： G11C11/16 , G11C19/08 , G11C5/06
摘要： The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include at least a first magnetic bus, a second magnetic bus, and an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus.

9. 发明授权

US10008251B2 Magnetic memory having multiple gates and method of operating same 有权
公开(公告)号：US10008251B2
公开(公告)日：2018-06-26
申请号：US15597056
申请日：2017-05-16
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Koen Martens , Adrien Vaysset
IPC分类号： G11C11/16 , G11C11/15 , H01L43/08
CPC分类号： G11C11/1675 , G11C11/15 , G11C11/161 , H01L43/08
摘要： The disclosed technology generally relates to magnetic memory and more particularly to voltage-controlled magnetic memory, and to methods of using same. In one aspect, a magnetic memory comprises a first magnetic stack including a first gate dielectric layer formed between a first gate electrode and a first free ferromagnetic layer. The magnetic memory additionally comprises a second magnetic stack including a second gate dielectric layer formed between a second gate electrode and a second free ferromagnetic layer. The first free ferromagnetic layer and the second free ferromagnetic layer of the magnetic memory are magnetically coupled, contiguous and are positioned at an oblique angle relative to each other, and the first gate electrode and the second gate electrode are electrically isolated from each other.

10. 发明申请

US20170301383A1 MAGNETIC MEMORY HAVING MULTIPLE GATES AND METHOD OF OPERATING SAME 有权
公开(公告)号：US20170301383A1
公开(公告)日：2017-10-19
申请号：US15597056
申请日：2017-05-16
申请人： IMEC VZW , Katholieke Universiteit Leuven
发明人： Koen Martens , Adrien Vaysset
IPC分类号： G11C11/16 , G11C11/15 , H01L43/08
CPC分类号： G11C11/1675 , G11C11/15 , G11C11/161 , H01L43/08
摘要： The disclosed technology generally relates to magnetic memory and more particularly to voltage-controlled magnetic memory, and to methods of using same. In one aspect, a magnetic memory comprises a first magnetic stack including a first gate dielectric layer formed between a first gate electrode and a first free ferromagnetic layer. The magnetic memory additionally comprises a second magnetic stack including a second gate dielectric layer formed between a second gate electrode and a second free ferromagnetic layer. The first free ferromagnetic layer and the second free ferromagnetic layer of the magnetic memory are magnetically coupled, contiguous and are positioned at an oblique angle relative to each other, and the first gate electrode and the second gate electrode are electrically isolated from each other.

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