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1. 发明授权

US11145356B2 Computation operator in memory and operation method thereof 有权
公开(公告)号：US11145356B2
公开(公告)日：2021-10-12
申请号：US16850016
申请日：2020-04-16
申请人： Industrial Technology Research Institute
发明人： Fu-Cheng Tsai , Heng-Yuan Lee , Chih-Sheng Lin , Jian-Wei Su , Tuo-Hung Hou
IPC分类号： G11C11/34 , G11C11/408 , G11C11/56 , G11C11/4099 , G11C11/4091
摘要： A computation operator in memory and an operation method thereof are provided. The computation operator in memory includes a word line calculator, a decision-maker and a sense amplifier. The word line calculator calculates a number of enabled word lines of a memory. The decision-maker generates a plurality of reference signals according to at least one of the number of enabled word lines and a used size of the memory, the reference signals are configured to set a distribution range. The sense amplifier receives a readout signal of the memory, and obtains a computation result by converting the readout signal according to the reference signals.

2. 发明授权

US10914618B2 Readout circuit for sensor and readout method thereof 有权
公开(公告)号：US10914618B2
公开(公告)日：2021-02-09
申请号：US15851609
申请日：2017-12-21
申请人： Industrial Technology Research Institute
发明人： Sih-Han Li , Chih-Sheng Lin , Ya-Wen Yang , Kuan-Wei Chen , Shyh-Shyuan Sheu
IPC分类号： G01D18/00 , G01D3/02
摘要： A readout circuit for a sensor and a readout method thereof are provided. The readout circuit includes a reference circuit, a compensated circuit, and a signal processing circuit. The reference circuit provides a direct current (DC) signal. The compensated circuit is coupled to the reference circuit. The compensated circuit obtains an analog sensing signal of the sensor, obtains the DC signal from the reference circuit, and provides a compensated signal according to the analog sensing signal and the DC signal. The signal processing circuit is coupled to the compensated circuit. The signal processing circuit processes the compensated signal to convert the compensated signal into a digital sensing signal. The compensated circuit subtracts the DC signal from the analog sensing signal to provide the compensated signal.

3. 发明申请

US20180136010A1 SENSOR INTERFACE CIRCUIT AND SENSOR OUTPUT ADJUSTING METHOD 审中-公开
公开(公告)号：US20180136010A1
公开(公告)日：2018-05-17
申请号：US15607389
申请日：2017-05-26
申请人： Industrial Technology Research Institute
发明人： Sih-Han Li , Shyh-Shyuan Sheu , Ya-Wen Yang , Chih-Ping Cheng , Chih-Sheng Lin
IPC分类号： G01D3/02 , H03K17/30 , G01D18/00
CPC分类号： G01D3/022 , G01B2210/60 , G01D18/008 , H03K17/30
摘要： A sensor interface circuit and sensor output adjusting method are provided. The sensor interface circuit includes a processor and a gain control circuit. The processor obtains information of a linear region of a sensor to set a configuration corresponding to the sensor. The gain control circuit is coupled to the processor, performs a return-to-zero operation for a maximum electronic value and a minimum electronic value corresponding to the linear region and performs a full-scale operation for a slope of the linear region according to the maximum input range of an analog-to-digital converter which is a subsequent-stage circuit of the sensor interface circuit.

4. 发明授权

US09368271B2 Three-dimension symmetrical vertical transformer 有权
标题翻译：三维对称垂直变压器
公开(公告)号：US09368271B2
公开(公告)日：2016-06-14
申请号：US14693866
申请日：2015-04-22
申请人： Industrial Technology Research Institute
发明人： Sih-Han Li , Chih-Sheng Lin
IPC分类号： H01F5/00 , H01F27/28 , H01F27/29
CPC分类号： H01F27/2804 , H01F5/00 , H01F27/2823 , H01F27/29 , H01F2027/2809
摘要： First and second paths of the primary-coil of the transformer are located at different sides of the symmetry-line. First terminals of the first and second paths are first and second ports of the primary-coil. Second terminals of the first and second paths are connected to each other. Two partial paths of the first path are connected to each other by TSV. Two partial paths of the second path are connected to each other by TSV. Third and fourth paths of the secondary-coil of the transformer are located on different sides of the symmetry-line. First terminals of the third and fourth paths are first and second ports of the secondary-coil. Second terminals of the third and fourth paths are connected to each other. Two partial paths of the third path are connected to each other by TSV. Two partial paths of the fourth path are connected to each other by TSV.
摘要翻译：变压器的初级线圈的第一和第二路径位于对称线的不同侧。第一和第二路径的第一端子是初级线圈的第一和第二端口。第一和第二路径的第二端子彼此连接。第一路径的两个部分路径通过TSV相互连接。第二路径的两个部分路径通过TSV相互连接。变压器的次级线圈的第三和第四路径位于对称线的不同侧。第三和第四路径的第一端子是次级线圈的第一和第二端口。第三和第四路径的第二端子彼此连接。第三路径的两个部分路径通过TSV相互连接。第四路径的两个部分路径通过TSV相互连接。

5. 发明申请

US20160012958A1 THREE-DIMENSION SYMMETRICAL VERTICAL TRANSFORMER 有权
标题翻译：三维对称垂直变压器
公开(公告)号：US20160012958A1
公开(公告)日：2016-01-14
申请号：US14693866
申请日：2015-04-22
申请人： Industrial Technology Research Institute
发明人： Sih-Han Li , Chih-Sheng Lin
IPC分类号： H01F27/28 , H01F27/29
CPC分类号： H01F27/2804 , H01F5/00 , H01F27/2823 , H01F27/29 , H01F2027/2809
摘要： First and second paths of the primary-coil of the transformer are located at different sides of the symmetry-line. First terminals of the first and second paths are first and second ports of the primary-coil. Second terminals of the first and second paths are connected to each other. Two partial paths of the first path are connected to each other by TSV. Two partial paths of the second path are connected to each other by TSV. Third and fourth paths of the secondary-coil of the transformer are located on different sides of the symmetry-line. First terminals of the third and fourth paths are first and second ports of the secondary-coil. Second terminals of the third and fourth paths are connected to each other. Two partial paths of the third path are connected to each other by TSV. Two partial paths of the fourth path are connected to each other by TSV.
摘要翻译：变压器的初级线圈的第一和第二路径位于对称线的不同侧。第一和第二路径的第一端子是初级线圈的第一和第二端口。第一和第二路径的第二端子彼此连接。第一路径的两个部分路径通过TSV相互连接。第二路径的两个部分路径通过TSV相互连接。变压器的次级线圈的第三和第四路径位于对称线的不同侧。第三和第四路径的第一端子是次级线圈的第一和第二端口。第三和第四路径的第二端子彼此连接。第三路径的两个部分路径通过TSV相互连接。第四路径的两个部分路径通过TSV相互连接。

6. 发明授权

US11599600B2 Computing in memory cell 有权
公开(公告)号：US11599600B2
公开(公告)日：2023-03-07
申请号：US17013646
申请日：2020-09-06
申请人： Industrial Technology Research Institute
发明人： Chih-Sheng Lin , Jian-Wei Su , Tuo-Hung Hou , Sih-Han Li , Fu-Cheng Tsai , Yu-Hui Lin
IPC分类号： G11C11/412 , G06F17/16
摘要： A computing in memory (CIM) cell includes a memory cell circuit, a first semiconductor element, a second semiconductor element, and a third semiconductor element. A first terminal of the first semiconductor element is coupled to a first computing bit-line. A control terminal of the first semiconductor element is coupled to a computing word-line. A control terminal of the second semiconductor element is coupled to the memory cell circuit. A first terminal of the second semiconductor element is coupled to a second terminal of the first semiconductor element. A first terminal of the third semiconductor element is coupled to a second terminal of the second semiconductor element. A second terminal of the third semiconductor element is coupled to a second computing bit-line. A control terminal of the third semiconductor element receives a bias voltage.

7. 发明授权

US11423983B2 Memory device and data weight state determining method for in-memory computation 有权
公开(公告)号：US11423983B2
公开(公告)日：2022-08-23
申请号：US17322509
申请日：2021-05-17
申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
发明人： Chih-Sheng Lin , Sih-Han Li , Yu-Hui Lin , Jian-Wei Su
IPC分类号： G11C11/00 , G11C13/00 , G11C7/06
摘要： A memory device for in-memory computation includes data channels, a memory cell array, a maximum accumulated weight generating array, a minimum accumulated weight generating array, a reference generator and a comparator. The data channels are selectively enabled according to data input. The memory cell array generates an accumulated data weight value according to the quantity of enabled data channels, a first resistance and a second resistance. The maximum accumulated weight generating array generates a maximum accumulated weight value according to the quantity of enabled data channels and the first resistance. The minimum accumulated weight generating array generates a minimum accumulated weight value according to the quantity of enabled data channels and the second resistance. The reference generator generates reference value(s) according to the maximum and minimum accumulated weight values. The comparator compares the accumulated data weight value with the reference value(s) to generate a data weight state.

8. 发明授权

US10156535B2 Sensor device and method of manufacturing the same 有权
公开(公告)号：US10156535B2
公开(公告)日：2018-12-18
申请号：US14961906
申请日：2015-12-08
申请人： Industrial Technology Research Institute
发明人： Sih-Han Li , Chih-Sheng Lin , Kuan-Wei Chen , Erh-Hao Chen , Shyh-Shyuan Sheu
IPC分类号： G01N27/12
摘要： A sensor device and a method of manufacturing the same are provided. The sensor device includes a substrate, a plurality of sensing electrodes, a humidity nanowire sensor, a temperature nanowire sensor, and a gas nanowire sensor. The sensing electrodes are formed on the substrate, and the humidity, the temperature and the gas nanowire sensors are also on the substrate. The humidity nanowire sensor includes an exposed first nanowire sensing region, the temperature nanowire sensor includes a second nanowire sensing region, and the gas nanowire sensor includes a third nanowire sensing region.

9. 发明申请

US20170115248A1 GAS SENSING APPARATUS AND A GAS SENSING METHOD 审中-公开
公开(公告)号：US20170115248A1
公开(公告)日：2017-04-27
申请号：US14958856
申请日：2015-12-03
申请人： Industrial Technology Research Institute
发明人： Chih-Sheng Lin , Erh-Hao Chen , Sih-Han Li , Kuan-Wei Chen , Shyh-Shyuan Sheu
IPC分类号： G01N27/12
CPC分类号： G01N27/127
摘要： A gas sensing apparatus including a gas sensor, a gas determining circuit and a gas database is provided. The gas sensor includes at least two nanowire sensors. The gas sensor is configured to sense multiple gases and output a plurality of sensing signals. The gas determining circuit is coupled to the gas sensor. The gas determining circuit is configured to receive the sensing signals and determine types of the gases according to reference data and the sensing signals. The gas database is coupled to the gas determining circuit. The gas database stores the reference data and outputs the reference data to the gas determining circuit. Each of the nanowire sensors includes at least one nanowire. Structural properties of the nanowires are different.

10. 发明申请

US20140175606A1 VARACTOR 有权
标题翻译：变量
公开(公告)号：US20140175606A1
公开(公告)日：2014-06-26
申请号：US13974909
申请日：2013-08-23
申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
发明人： Sih-Han Li , Pei-Ling Tseng , Zhe-Hui Lin , Chih-Sheng Lin
IPC分类号： H01L49/02
CPC分类号： H01L23/481 , H01L27/0808 , H01L29/93 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： A varactor is provided. A substrate includes a first surface, a second surface and a first opening and a second opening in the substrate. A conductive material is filling the first and second openings, to form a first through-wafer via (TWV) and a second through-wafer via. A first capacitor is coupled between the first through-wafer via and a first terminal. A second capacitor is coupled between the second through-wafer via and a second terminal. A capacitance of a depletion-region capacitor between the first through-wafer via and the second through-wafer via is determined by a bias voltage applied to the first through-wafer via and the second through-wafer via.
摘要翻译：提供变容二极管。衬底包括衬底中的第一表面，第二表面和第一开口以及第二开口。导电材料填充第一和第二开口，以形成第一贯穿晶片通孔（TWV）和第二通晶片通孔。第一电容器耦合在第一通晶片通孔和第一端子之间。第二电容器耦合在第二通晶片通孔和第二端子之间。第一贯穿晶片通孔和第二贯通晶片通孔之间的耗尽区电容器的电容由施加到第一贯穿晶片通孔和第二贯通晶片通孔的偏置电压决定。

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