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1. 发明申请

US20180062001A1 VARIABLE CAPACITOR BASED ON BURIED OXIDE PROCESS 审中-公开
公开(公告)号：US20180062001A1
公开(公告)日：2018-03-01
申请号：US15250493
申请日：2016-08-29
申请人： QUALCOMM Incorporated
发明人： Francesco CAROBOLANTE , Fabio Alessio MARINO
IPC分类号： H01L29/93 , H01L23/00 , H01L29/06 , H01L29/66
CPC分类号： H01L29/93 , H01L24/08 , H01L27/0808 , H01L29/0649 , H01L29/66174 , H01L29/66189
摘要： Certain aspects of the present disclosure provide a semiconductor variable capacitor based on a buried oxide process. The semiconductor variable capacitor generally includes a first conductive pad coupled to a first non-insulative region and a second conductive pad coupled to a second non-insulative region. The second non-insulative region may be coupled to a semiconductor region. The capacitor may also include a first control region coupled to the first semiconductor region such that a capacitance between the first conductive pad and the second conductive pad is configured to be adjusted by varying a control voltage applied to the first control region. The capacitor also includes an insulator region disposed below the semiconductor region, wherein at least a portion of the first non-insulative region is separated from the second non-insulative region by the insulator region such that the first conductive pad is electrically isolated from the second conductive pad.

2. 发明申请

US20170077093A1 BACKSIDE COUPLED SYMMETRIC VARACTOR STRUCTURE 有权
标题翻译：后置耦合对称变流器结构
公开(公告)号：US20170077093A1
公开(公告)日：2017-03-16
申请号：US15298124
申请日：2016-10-19
申请人： QUALCOMM Incorporated
发明人： Daeik Daniel KIM , David Francis BERDY , Je-Hsiung Jeffrey LAN , Changhan Hobie YUN , Jonghae KIM
IPC分类号： H01L27/08 , H01L29/93 , H01L21/78 , H01L29/66
CPC分类号： H01L27/0808 , H01L21/7624 , H01L21/76264 , H01L21/78 , H01L27/1203 , H01L29/66174 , H01L29/66181 , H01L29/93
摘要： A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may surround the body of the first varactor component. The first varactor component may be supported on a backside by an isolation layer. The symmetric varactor structure may also include a second varactor component electrically coupled to the backside of the first varactor component through a backside conductive layer.
摘要翻译：对称变容二极管结构可以包括第一变容二极管组件。第一变容二极管分量可以包括作为第二板操作的栅极，作为电介质层工作的栅极氧化物层和作为区域调制电容器的第一板工作的主体。此外，掺杂区域可围绕第一变容二极管部件的主体。第一变容二极管组件可以由隔离层在背面支撑。对称变容二极管结构还可以包括通过背侧导电层电耦合到第一变容二极管部件的背侧的第二变容二极管部件。

3. 发明授权

US09525078B2 Tunable device having a FET integrated with a BJT 有权
标题翻译：具有与BJT集成的FET的可调谐装置
公开(公告)号：US09525078B2
公开(公告)日：2016-12-20
申请号：US14709780
申请日：2015-05-12
申请人： Skyworks Solutions, Inc.
发明人： Bin Li , Peter J. Zampardi, Jr. , Andre G. Metzger
IPC分类号： H01L29/93 , H01L21/8249 , H01L27/06 , H01L27/08 , H01L29/94 , H03J3/18
CPC分类号： H01L27/0635 , H01L21/8249 , H01L27/0605 , H01L27/0623 , H01L27/0808 , H01L27/0811 , H01L29/1095 , H01L29/93 , H01L29/94 , H03J3/185
摘要： A device includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage can be applied to the back gate of the FET.
摘要翻译：一种器件包括与双极结型晶体管（BJT）的至少一部分集成的场效应晶体管（FET），其中FET的背栅与BJT的基极共享电连接，并且其中反向电压可以应用于FET的背栅极。

4. 发明申请

US20160329918A1 SINGLE VARACTOR STACK WITH LOW SECOND-HARMONIC GENERATION 有权
标题翻译：具有低二次谐波发生的单变量堆叠
公开(公告)号：US20160329918A1
公开(公告)日：2016-11-10
申请号：US15005235
申请日：2016-01-25
申请人： TriQuint Semiconductor, Inc.
发明人： Peter V. Wright
IPC分类号： H04B1/04 , H01L49/02 , H01L27/08
CPC分类号： H04B1/0475 , H01L27/0808 , H01L28/20 , H01L29/93
摘要： Embodiments include semiconductor devices related to compound varactor circuits. Specifically, a semiconductor device may be constructed of a modified anti-series string of varactor pairs, wherein one varactor in a varactor pair has an effective area larger than the other varactor. Varactor pairs in the anti-series string are arranged such that adjacent varactors coupling varactor pairs have equal effective areas. In some embodiments, the anti-series string may have four varactors (two varactor pairs.) In other embodiments, the anti-series string may have eight varactors (four varactor pairs) or twelve varactors (six varactor pairs). The compound varactor using the modified anti-series string of varactor pairs may be advantageous in reducing second harmonics related to parasitic capacitances in anti-series varactor applications.
摘要翻译：实施例包括与复合变容二极管相关的半导体器件。具体来说，半导体器件可以由变容二极管对的改进的反串联串构成，其中变容二极管对中的一个变容二极管的有效面积大于其他变容二极管。反串联串中的变压器对布置成使得耦合变容二极管对的相邻变容二极管具有相等的有效面积。在一些实施例中，抗串联串可以具有四个变容二极管（两个变容二极管对）。在其他实施例中，反串联串可以具有八个变容二极管（四个变容二极管对）或十二个变容二极管（六个变容二极管对）。使用经修改的反串联变容二极管对的复合变容二极管在减少与抗串联变容二极管应用中的寄生电容相关的二次谐波方面可能是有利的。

5. 发明授权

US09406815B2 Adding decoupling function for TAP cells 有权
标题翻译：为TAP单元添加去耦功能
公开(公告)号：US09406815B2
公开(公告)日：2016-08-02
申请号：US14797614
申请日：2015-07-13
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuo-Ji Chen , Li-Chun Tien
IPC分类号： H01L29/34 , H01L29/94 , H01L23/528 , H01L29/10 , H01L27/08
CPC分类号： H01L29/94 , H01L23/528 , H01L27/0805 , H01L27/0808 , H01L29/107 , H01L29/1095 , H01L2924/0002 , H01L2924/00
摘要： A circuit includes a tap cell. The tap cell includes a well region, a first well pickup region in the well region, a VDD power rail and a VSS power rail spaced apart from the VDD power rail. The tap cell also includes a first jog extending from the VDD power rail toward the VSS power rail and forming a continuous region with the VDD power rail. The tap cell further comprises a first capacitor including a first gate electrode line acting as a first capacitor plate, and the first well pickup region acting as a part of a second capacitor plate. A first one of the first and second capacitor plates is overlapped by and connected to the first jog, and a second one of the first and second capacitor plates is coupled to the VSS power rail.
摘要翻译：电路包括抽头单元。抽头单元包括阱区，阱区中的第一阱拾取区，VDD电源轨和与VDD电源轨分开的VSS电源轨。分接单元还包括从VDD电源轨向VSS电源轨延伸的第一点动，并且与VDD电源轨形成连续区域。抽头单元还包括第一电容器，其包括用作第一电容器板的第一栅电极线和用作第二电容器板的一部分的第一阱拾取区。第一和第二电容器板中的第一电容器板与第一点动器重叠并连接到第一和第二电容器板，第二和第二电容器板中的第二个耦合到VSS电源轨。

6. 发明授权

US09299699B2 Multi-gate and complementary varactors in FinFET process 有权
标题翻译： FinFET工艺中的多栅极和互补变容二极管
公开(公告)号：US09299699B2
公开(公告)日：2016-03-29
申请号：US13801089
申请日：2013-03-13
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chi-Hsien Lin , Ying-Ta Lu , Hsien-Yuan Liao , Ho-Hsiang Chen , Chewn-Pu Jou , Fu-Lung Hsueh
IPC分类号： H01L27/088 , H01L27/08
CPC分类号： H01L29/93 , H01L27/0808 , H01L27/0886 , H01L27/0924
摘要： A varactor includes at least one semiconductor fin, a first gate, and a second gate physically disconnected from the first gate. The first gate and the second gate form a first FinFET and a second FinFET, respectively, with the at least one semiconductor fin. The source and drain regions of the first FinFET and the second FinFET are interconnected to form the varactor.
摘要翻译：变容二极管包括至少一个半导体鳍，第一栅极和物理上与第一栅极断开的第二栅极。第一栅极和第二栅极分别与至少一个半导体鳍形成第一FinFET和第二FinFET。第一FinFET和第二FinFET的源极和漏极区域互连以形成变容二极管。

7. 发明申请

US20150236014A1 STACKED METAL OXIDE SEMICONDUCTOR (MOS) AND METAL OXIDE METAL (MOM) CAPACITOR ARCHITECTURE 有权
标题翻译：堆叠金属氧化物半导体（MOS）和金属氧化物金属（MOM）电容器架构
公开(公告)号：US20150236014A1
公开(公告)日：2015-08-20
申请号：US14476086
申请日：2014-09-03
申请人： QUALCOMM Incorporated
发明人： Timothy Donald Gathman
IPC分类号： H01L27/08 , H01L29/93 , H03K17/687 , H01L29/94
CPC分类号： H01L27/0808 , H01L23/5223 , H01L27/0805 , H01L28/86 , H01L29/93 , H01L29/94 , H01L2924/0002 , H03K17/687 , H01L2924/00
摘要： A device includes a first stacked capacitor comprising a first MOS capacitance and a first MOM capacitance, the first MOS capacitance coupled to a first node, the first node configured to receive a first bias voltage, and a second stacked capacitor comprising a second MOS capacitance and a second MOM capacitance, the second MOS capacitance coupled to the first node.
摘要翻译：一种器件包括：第一层叠电容器，包括第一MOS电容和第一MOM电容，所述第一MOS电容耦合到第一节点，所述第一节点被配置为接收第一偏置电压;以及第二堆叠电容器，包括第二MOS电容和第二MOM电容，所述第二MOS电容耦合到所述第一节点。

8. 发明授权

US09036327B2 Electronic element, variable capacitor, micro switch, method for driving micro switch, and MEMS type electronic element 有权
标题翻译：电子元件，可变电容器，微动开关，微动开关的驱动方法和MEMS型电子元件
公开(公告)号：US09036327B2
公开(公告)日：2015-05-19
申请号：US13864430
申请日：2013-04-17
申请人： Nikon Corporation
发明人： Hiroshi Konishi , Junji Suzuki
IPC分类号： H01G7/06 , H01G5/16 , H01G7/00 , G02B26/08 , B81B3/00 , H01G5/18 , H01L23/522 , H01L27/08
CPC分类号： G02B26/08 , B81B3/0086 , B81B2201/016 , H01G5/16 , H01G5/18 , H01L23/5223 , H01L27/0808 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： An electronic element includes a fixed portion, and a movable portion which is movable with respect to the fixed portion and which is provided to generate a spring force to make restoration to a predetermined position. The fixed portion is provided with a first driving electrode and a first signal electrode. The movable portion is provided with a second driving electrode and a second signal electrode. An electrostatic force is generated between the first driving electrode and the second driving electrode by a voltage applied therebetween so that the electrostatic force resists against the spring force; and the first and second driving electrodes and the first and second signal electrodes are arranged so that the electrostatic force is generated in a direction in which a spacing distance between the first and second signal electrodes is widened.
摘要翻译：电子元件包括固定部分和可相对于固定部分移动并且被设置成产生弹簧力以使其恢复到预定位置的可动部分。固定部设置有第一驱动电极和第一信号电极。可动部设置有第二驱动电极和第二信号电极。通过施加在第一驱动电极和第二驱动电极之间的电压产生静电力，使得静电力抵抗弹簧力; 并且第一和第二驱动电极以及第一和第二信号电极被布置成使得在第一和第二信号电极之间的间隔距离变宽的方向产生静电力。

9. 发明授权

US08809155B2 Back-end-of-line metal-oxide-semiconductor varactors 有权
标题翻译：后端金属氧化物半导体变容二极管
公开(公告)号：US08809155B2
公开(公告)日：2014-08-19
申请号：US13644918
申请日：2012-10-04
申请人： International Business Machines Corporation
发明人： John J. Ellis-Monaghan , Michael J. Hauser , Zhong-Xiang He , Xuefeng Liu , Richard A. Phelps , Robert M. Rassel , Anthony K. Stamper
IPC分类号： H01L21/336
CPC分类号： H01L29/93 , H01L27/0688 , H01L27/0808
摘要： Device structures, design structures, and fabrication methods for a varactor. The device structure includes a first electrode formed on a dielectric layer, and a semiconductor body formed on the first electrode. The semiconductor body is comprised of a silicon-containing semiconductor material in an amorphous state or a polycrystalline state. The device structure further includes an electrode insulator formed on the semiconductor body and a second electrode formed on the electrode insulator.
摘要翻译：变容二极管的器件结构，设计结构和制造方法。器件结构包括形成在电介质层上的第一电极和形成在第一电极上的半导体本体。半导体本体由非晶态或多晶态的含硅半导体材料构成。器件结构还包括形成在半导体主体上的电极绝缘体和形成在电极绝缘体上的第二电极。

10. 发明授权

US08796809B2 Varactor diode with doped voltage blocking layer 有权
标题翻译：具有掺杂电压阻挡层的变容二极管
公开(公告)号：US08796809B2
公开(公告)日：2014-08-05
申请号：US12206209
申请日：2008-09-08
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： H01L29/93 , H01L21/329 , H01L27/08 , H01L29/66 , H01L29/36 , H01L29/47 , H01L29/40 , H01L29/16 , H01L29/20 , H01L29/267
CPC分类号： H01L29/93 , H01L27/0808 , H01L27/0811 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/267 , H01L29/36 , H01L29/402 , H01L29/47 , H01L29/66174
摘要： A varactor diode includes a contact layer having a first conductivity type, a voltage blocking layer having the first conductivity and a first net doping concentration on the contact layer, a blocking junction on the voltage blocking layer, and a plurality of discrete doped regions in the voltage blocking layer and spaced apart from the carrier injection junction. The plurality of discrete doped regions have the first conductivity type and a second net doping concentration that is higher than the first net doping concentration, and the plurality of discrete doped regions are configured to modulate the capacitance of the varactor diode as a depletion region of the varactor diode expands in response to a reverse bias voltage applied to the blocking junction. Related methods of forming a varactor diode are also disclosed.
摘要翻译：变容二极管包括具有第一导电类型的接触层，具有第一导电性的电压阻挡层和在接触层上的第一净掺杂浓度，电压阻挡层上的阻挡结，以及在该阻抗层中的多个离散掺杂区电压阻挡层并与载流子注入结隔开。所述多个离散掺杂区域具有高于第一净掺杂浓度的第一导电类型和第二净掺杂浓度，并且所述多个离散掺杂区域被配置为调制变容二极管的电容作为所述第一净掺杂浓度的耗尽区变容二极管响应于施加到阻塞结的反向偏置电压而膨胀。还公开了形成变容二极管的相关方法。

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