会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • System and Method for a Low Noise Amplifier Module
    • 低噪声放大器模块的系统和方法
    • US20160248388A1
    • 2016-08-25
    • US15144907
    • 2016-05-03
    • Infineon Technologies AG
    • Nikolay IlkovPaulo OliveiraDaniel Kehrer
    • H03F3/19
    • H03F3/19H03F1/0261H03F3/191H03F2200/111H03F2200/249H03F2200/294H03F2200/39H03F2200/451H04B1/10
    • In accordance with an embodiment, a circuit includes a low noise amplifier transistor disposed on a first integrated circuit, a single pole multi throw (SPMT) switch disposed on a second integrated circuit, and a bypass switch coupled between a control node of the low noise amplifier transistor and an output node of the low noise amplifier transistor. The SPMT switch couples a plurality of module input terminals to a control node of the low noise amplifier transistor, and the bypass switch including a first switch coupled between the control node of the low noise amplifier transistor and an intermediate node, a second switch coupled between the intermediate node and the output node of the low noise amplifier transistor, and a third switch coupled between the intermediate node and a first reference node. The first integrated circuit and the second integrated circuit are disposed on a substrate.
    • 根据实施例,电路包括设置在第一集成电路上的低噪声放大器晶体管,设置在第二集成电路上的单极多掷(SPMT)开关,以及耦合在低噪声控制节点之间的旁路开关 放大器晶体管和低噪声放大器晶体管的输出节点。 SPMT开关将多个模块输入端子耦合到低噪声放大器晶体管的控制节点,并且旁路开关包括耦合在低噪声放大器晶体管的控制节点和中间节点之间的第一开关,第二开关耦合在 低噪声放大器晶体管的中间节点和输出节点,以及耦合在中间节点和第一参考节点之间的第三开关。 第一集成电路和第二集成电路设置在基板上。