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1. 发明申请

US20140174907A1 High Deposition Rate Chamber with Co-Sputtering Capabilities 审中-公开
标题翻译：具有共溅射能力的高沉积速率室
公开(公告)号：US20140174907A1
公开(公告)日：2014-06-26
申请号：US13725133
申请日：2012-12-21
申请人： INTERMOLECULAR, INC.
发明人： Hong Sheng Yang , Kent Riley Child , Chi-I Lang , James Tsung
IPC分类号： C23C14/34
CPC分类号： C23C14/04 , B01J19/0046 , B01J2219/0043 , B01J2219/00527 , B01J2219/00596 , B01J2219/00754 , B01J2219/00756 , C23C14/351 , C23C14/352 , H01J37/34
摘要： A deposition chamber is provided. The deposition chamber includes a plurality of sputter guns disposed within the chamber, wherein the plurality of sputter guns are operable to vertically extend and retract within the chamber and wherein each gun of the plurality of sputter guns is pivotable around a pivot axis. The chamber includes a substrate support rotatable around a first axis and a second axis and a plate disposed over the substrate support. The plate has a plurality of apertures extending therethrough. The plurality of apertures includes an aperture located below each sputter gun of the plurality of sputter guns and a centrally located aperture.
摘要翻译：提供沉积室。沉积室包括设置在室内的多个溅射枪，其中多个溅射枪可操作以在室内垂直延伸和缩回，并且其中多个溅射枪中的每个喷枪可围绕枢转轴线枢转。腔室包括可围绕第一轴线旋转的基底支撑件和第二轴线以及设置在基板支撑件上方的板材。该板具有延伸穿过其中的多个孔。多个孔包括位于多个溅射枪的每个溅射枪下方的孔和位于中心的孔。

2. 发明申请

US20130334490A1 Transition Metal Oxide Bilayers 有权
公开(公告)号：US20130334490A1
公开(公告)日：2013-12-19
申请号：US13971467
申请日：2013-08-20
申请人： Intermolecular Inc. , SanDisk 3D LLC , Kabushiki Kaisha Toshiba
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

3. 发明申请

US20140262749A1 Methods of Plasma Surface Treatment in a PVD Chamber 审中-公开
标题翻译： PVD室中等离子体表面处理方法
公开(公告)号：US20140262749A1
公开(公告)日：2014-09-18
申请号：US13804265
申请日：2013-03-14
申请人： Intermolecular, Inc.
发明人： Ashish Bodke , Olov Karlsson , Kevin Kashefi , Chi-I Lang , Dipankar Pramanik , Hong Sheng Yang , Xuena Zhang
IPC分类号： C23C14/35
CPC分类号： B01J19/0046 , B01J2219/0043 , B01J2219/00443 , B01J2219/00527 , B01J2219/00635 , B01J2219/0075 , B01J2219/00756 , C23C14/042 , C23C14/345
摘要： Combinatorial processing of a substrate comprising site-isolated sputter deposition and site-isolated plasma processing can be performed in a same process chamber. The process chamber, configured to perform sputter deposition and plasma processing, comprises a grounded shield having at least an aperture disposed above the substrate to form a small, dark space gap to reduce or eliminate any plasma formation within the gap. The plasma processing may include plasma etching or plasma surface treatment.
摘要翻译：包含现场分离的溅射沉积和位置分离等离子体处理的基板的组合处理可以在相同的处理室中进行。被配置为执行溅射沉积和等离子体处理的处理室包括接地屏蔽，其具有设置在衬底上方的至少一个孔，以形成小的，较暗的空间间隙，以减少或消除间隙内的任何等离子体形成。等离子体处理可以包括等离子体蚀刻或等离子体表面处理。

4. 发明申请

US20140217348A1 Transition Metal Oxide Bilayers 有权
标题翻译：过渡金属氧化物双层
公开(公告)号：US20140217348A1
公开(公告)日：2014-08-07
申请号：US14252285
申请日：2014-04-14
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
摘要翻译：本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。还公开了形成非易失性存储元件的方法。非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

5. 发明申请

US20150200361A1 Transition Metal Oxide Bilayers 有权
标题翻译：过渡金属氧化物双层
公开(公告)号：US20150200361A1
公开(公告)日：2015-07-16
申请号：US14618055
申请日：2015-02-10
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
摘要翻译：本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。还公开了形成非易失性存储元件的方法。非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

6. 发明申请

US20140174921A1 Multi-Piece Target and Magnetron to Prevent Sputtering of Target Backing Materials 审中-公开
标题翻译：多片目标和磁控管，以防止靶材背衬材料的溅射
公开(公告)号：US20140174921A1
公开(公告)日：2014-06-26
申请号：US13725622
申请日：2012-12-21
申请人： INTERMOLECULAR, INC.
发明人： Hong Sheng Yang , Chi-I Lang , ShouQian Shao
IPC分类号： C23C14/35
CPC分类号： C23C14/351 , C23C14/3407 , C23C14/352 , C23C14/54 , H01J37/3405 , H01J37/3426 , H01J37/3429 , H01J37/3452 , H01J37/3455 , H01J37/3458
摘要： An apparatus for sputtering wherein magnets within the magnetron of a sputtering source are positioned such that Ar+ ions arriving at the surface of a multi-piece target do not strike the target perpendicular to the surface at the gaps between the sectors of the target. The off-angle bombardment of the Ar+ ions ensures that the Ar+ ions do not result in the sputtering and deposition of target backing material through the gap between the target sectors.
摘要翻译：一种用于溅射的设备，其中溅射源的磁控管内的磁体被定位成使得到达多件式靶的表面的Ar +离子在目标的扇区之间的间隙处不垂直于表面撞击靶。 Ar +离子的偏角轰击确保Ar +离子不会导致目标背衬材料通过目标部分之间的间隙的溅射和沉积。

7. 发明申请

US20140144771A1 Cooling Efficiency Method for Fluid Cooled Sputter Guns 审中-公开
标题翻译：流体冷却溅射枪的冷却效率方法
公开(公告)号：US20140144771A1
公开(公告)日：2014-05-29
申请号：US13687984
申请日：2012-11-28
申请人： INTERMOLECULAR, INC.
发明人： Kent Riley Child , Hong Sheng Yang
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3435 , H01J37/3497
摘要： A sputter gun assembly is provided. The sputter gun assembly includes a target and a target backing plate coupled to the back of the target. A magnetron is positioned within a cooling chamber and is disposed over the target backing plate and defines a gap between the magnetron and the target backing plate. A fluid inlet and a fluid outlet are connected to the cooling chamber. A restriction bar is positioned within the cooling chamber, wherein the restriction bar is configured to prevent a flow of fluid through the inlet to the outlet unless the fluid traverses the gap defined between the magnetron and the target backing plate. The sputter gun assembly further includes a diverter surrounding the magnetron. The diverter further includes slots in its surface that serve to direct cooling fluid through the gap formed between defined between the magnetron and the target backing plate.
摘要翻译：提供溅射枪组件。溅射枪组件包括连接到靶的背面的靶和目标背板。磁控管定位在冷却室内并且设置在目标背板上并限定磁控管与目标背板之间的间隙。流体入口和流体出口连接到冷却室。限制杆定位在冷却室内，其中限制杆构造成防止流体流过出口的入口，除非流体横过磁控管和目标背板之间限定的间隙。溅射枪组件还包括围绕磁控管的转向器。分流器还包括其表面中的槽，其用于将冷却流体引导通过形成在磁控管和目标背板之间的间隙。

8. 发明授权

US08735217B2 Multifunctional electrode 有权
公开(公告)号：US08735217B2
公开(公告)日：2014-05-27
申请号：US14017942
申请日：2013-09-04
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Dipankar Pramanik , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： C23C14/345 , C23C14/0042 , C23C14/0641 , C23C14/083 , C23C14/225 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1608 , H01L45/1616 , H01L45/1625
摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

9. 发明授权

US09087978B1 Transition metal oxide bilayers 有权
公开(公告)号：US09087978B1
公开(公告)日：2015-07-21
申请号：US14618055
申请日：2015-02-10
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L29/02 , H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

10. 发明授权

US08987697B2 Transition metal oxide bilayers 有权
标题翻译：过渡金属氧化物双层
公开(公告)号：US08987697B2
公开(公告)日：2015-03-24
申请号：US14252285
申请日：2014-04-14
申请人： Intermolecular Inc. , Kabushiki Kaisha Toshiba , SanDisk 3D LLC
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L29/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.
摘要翻译：本发明的实施例包括非易失性存储器元件和包括非易失性存储元件的存储器件。还公开了形成非易失性存储元件的方法。非易失性存储元件包括第一电极层，第二电极层和设置在第一和第二电极层之间的多个氧化物层。氧化物层中的一个具有线性电阻和亚化学计量组成，另一个氧化物层具有双稳态电阻和近化学计量组成。优选地，两个氧化物层厚度的总和在约和之间，并且具有双稳态电阻的氧化物层具有在总厚度的约25％至约75％之间的厚度。在一个实施例中，氧化物层在具有受控的氩气和氧气的气氛中使用反应溅射形成。

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