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1. 发明授权

US08874249B2 Discrete sampling based nonlinear control system 有权
标题翻译：基于离散采样的非线性控制系统
公开(公告)号：US08874249B2
公开(公告)日：2014-10-28
申请号：US14079132
申请日：2013-11-13
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt
IPC分类号： G06F19/00 , G03F7/20 , G05B13/02 , H01L21/66
CPC分类号： H01L22/26 , G03F7/705 , G05B13/02 , H01L2924/0002 , H01L2924/00
摘要： System, method and computer program product for configuring and controlling a facility to perform a manufacturing process and updating a tool controlling the process according to a model employed for mapping calculated coefficients that characterize non-linear variations observed of a product to actual control parameters governing the processes/tools used by the facility during the manufacturing process. The method enables real-time control of variation in an exposure step of a patterning process using an exposure tool to minimize a nonlinear variation in one or more pattern attributes by adjusting the exposure tool or the patterning process corresponding to the calculated coefficients. In the method, measurements of product attributes, obtained by finite sampling over a well defined domain, are projected onto a predefined reference mesh spanning the domain, using a physically based model comprised of functions constructed to be orthogonal and normalized over a discrete set of reference mesh locations.
摘要翻译：用于配置和控制设备执行制造过程的系统，方法和计算机程序产品，并且根据用于将表征产品观察到的非线性变化的计算系数映射到用于将产品观察到的实际控制参数工厂在制造过程中使用的工艺/工具。该方法能够实时地控制使用曝光工具的图案化处理的曝光步骤中的变化，以通过调整对应于所计算的系数的曝光工具或图案化处理来最小化一个或多个图案属性中的非线性变化。在该方法中，通过在良好定义的域上的有限采样获得的产品属性的测量被投影到横跨该域的预定参考网格上，使用基于物理的模型，该模型由构造为通过离散参考集合正交和归一化的函数组成网格位置。

2. 发明申请

US20140065733A1 DISCRETE SAMPLING BASED NONLINEAR CONTROL SYSTEM 有权
标题翻译：基于离散采样的非线性控制系统
公开(公告)号：US20140065733A1
公开(公告)日：2014-03-06
申请号：US14079132
申请日：2013-11-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Christopher P. Ausschnitt
IPC分类号： H01L21/66 , G05B13/02
CPC分类号： H01L22/26 , G03F7/705 , G05B13/02 , H01L2924/0002 , H01L2924/00
摘要： System, method and computer program product for configuring and controlling a facility to perform a manufacturing process and updating a tool controlling the process according to a model employed for mapping calculated coefficients that characterize non-linear variations observed of a product to actual control parameters governing the processes/tools used by the facility during the manufacturing process. The method enables real-time control of variation in an exposure step of a patterning process using an exposure tool to minimize a nonlinear variation in one or more pattern attributes by adjusting the exposure tool or the patterning process corresponding to the calculated coefficients. In the method, measurements of product attributes, obtained by finite sampling over a well defined domain, are projected onto a predefined reference mesh spanning the domain, using a physically based model comprised of functions constructed to be orthogonal and normalized over a discrete set of reference mesh locations.
摘要翻译：用于配置和控制设备执行制造过程的系统，方法和计算机程序产品，并且根据用于将表征产品观察到的非线性变化的计算系数映射到用于将产品观察到的实际控制参数工厂在制造过程中使用的工艺/工具。该方法能够实时地控制使用曝光工具的图案化处理的曝光步骤中的变化，以通过调整对应于所计算的系数的曝光工具或图案化处理来最小化一个或多个图案属性中的非线性变化。在该方法中，通过在良好定义的域上的有限采样获得的产品属性的测量被投影到横跨该域的预定参考网格上，使用基于物理的模型，该模型由构造为通过离散参考集合正交和归一化的函数组成网格位置。

3. 发明申请

US20150162249A1 FABRICATION OF LITHOGRAPHIC IMAGE FIELDS USING A PROXIMITY STITCH METROLOGY 有权
标题翻译：使用临时地图学方法制作图像图像场
公开(公告)号：US20150162249A1
公开(公告)日：2015-06-11
申请号：US14100297
申请日：2013-12-09
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Jaime D. Morillo , Roger J. Yerdon
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： H01L22/12 , G03F7/70475
摘要： A method of determining stitching errors in multiple lithographically exposed fields on a semiconductor layer during a semiconductor manufacturing process is provided. The method may include receiving a predetermined design distance corresponding to a plurality of petals associated with the multiple lithographically exposed fields and identifying a blossom within a single field-of-view (FOV) of a metrology tool, where the blossom is formed by a non-overlapping abutment of corners corresponding to the multiple lithographically exposed fields. The blossom may include the plurality of petals associated with the multiple lithographically exposed fields. Petal position errors may then be calculated based on both a coordinate position for each of the plurality of petals within the blossom and the predetermined design distance, whereby the calculated petal position errors are indicative of stitching errors for the multiple lithographically exposed fields.
摘要翻译：提供了一种在半导体制造过程中确定半导体层上的多个光刻曝光场中的拼接误差的方法。该方法可以包括接收对应于与多个光刻曝光场相关联的多个花瓣的预定设计距离，并且在计量工具的单个视场（FOV）内识别开花，其中开花由非 - 对应于多个光刻曝光场的角的重叠基台。花可以包括与多个光刻曝光场相关联的多个花瓣。然后可以基于花内的多个花瓣中的每一个的坐标位置和预定设计距离来计算花瓣位置误差，由此计算的花瓣位置误差指示多个光刻曝光场的缝合误差。

4. 发明申请

US20130075871A1 MULTI-LAYER CHIP OVERLAY TARGET AND MEASUREMENT 有权
标题翻译：多层芯片覆盖目标和测量
公开(公告)号：US20130075871A1
公开(公告)日：2013-03-28
申请号：US13684787
申请日：2012-11-26
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Nelson M. Felix , Allen H. Gabor
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , G03F7/70633 , H01L2924/0002 , H01L2924/00
摘要： A wafer includes an active region and a kerf region surrounding at least a portion of the active region. The wafer also includes a target region having a rectangular shape with a width and length greater than the width, the target region including one or more target patterns, at least one of the target patterns being formed by two sub-patterns disposed at opposing corners of target rectangle disposable within the target region.
摘要翻译：晶片包括活性区域和围绕有源区域的至少一部分的切口区域。晶片还包括具有宽度和长度大于宽度的矩形形状的目标区域，目标区域包括一个或多个目标图案，目标图案中的至少一个由两个子图案形成，两个子图案设置在目标区域内的一次性目标矩形。

5. 发明授权

US09257351B2 Metrology marks for bidirectional grating superposition patterning processes 有权
标题翻译：双向光栅叠加图案化程序的计量标记
公开(公告)号：US09257351B2
公开(公告)日：2016-02-09
申请号：US13968336
申请日：2013-08-15
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Nelson M. Felix , Scott S. Halle
IPC分类号： G03F7/26 , H01L21/66 , G03F7/20
CPC分类号： H01L22/12 , G03F7/70633 , H01L22/30
摘要： Cut spacer reference marks, targets having such cut spacer reference marks, and methods of making the same by forming spacer gratings around grating lines on a first layer, and fabricating a template mask that extends across and perpendicular to such spacer gratings. Cut spacer gratings are etched into a second layer using the template mask to superimpose at least a portion of the spacer gratings of the first layer into the second layer.
摘要翻译：切割间隔物参考标记，具有这种切割间隔物参考标记的目标，以及通过在第一层上围绕光栅线形成间隔光栅而制造其的方法，以及制造横跨和垂直于这种间隔栅格延伸的模板掩模。使用模板掩模将切割的间隔光栅蚀刻到第二层中，以将第一层的间隔光栅的至少一部分叠加到第二层中。

6. 发明申请

US20150048525A1 METROLOGY MARKS FOR UNIDIRECTIONAL GRATING SUPERPOSITION PATTERNING PROCESSES 有权
标题翻译：用于单位格子绘图方法的方法标记
公开(公告)号：US20150048525A1
公开(公告)日：2015-02-19
申请号：US13968348
申请日：2013-08-15
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Nelson M. Felix , Scott D. Halle
IPC分类号： H01L21/308 , H01L23/544 , H01L21/66
CPC分类号： H01L21/308 , G03F7/70633 , H01L22/12 , H01L23/544 , H01L2924/0002 , H01L2924/00
摘要： Cut spacer reference marks, targets having such cut spacer reference marks, and methods of making the same by forming spacer gratings around grating lines on a first layer, and fabricating an angled template mask that extends across and resides at an angle with respect to such spacer gratings. Angled, cut spacer gratings are etched into a second layer using the angled template mask to superimpose at least a portion of the spacer gratings of the first layer into the second layer.
摘要翻译：切割间隔基准标记，具有这种切割的间隔物参考标记的目标以及通过在第一层上的格栅线周围形成间隔光栅而制造相同的方法，以及制造成角度的模板掩模，该模板掩模相对于这种间隔物光栅。使用成角度的模板掩模将角度切割的间隔光栅蚀刻到第二层中，以将第一层的间隔光栅的至少一部分叠加到第二层中。

7. 发明授权

US08847416B2 Multi-layer chip overlay target and measurement 有权
标题翻译：多层芯片覆盖目标和测量
公开(公告)号：US08847416B2
公开(公告)日：2014-09-30
申请号：US13684787
申请日：2012-11-26
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Nelson M. Felix , Allen H. Gabor
IPC分类号： G03F7/00 , H01L23/544
CPC分类号： H01L23/544 , G03F7/70633 , H01L2924/0002 , H01L2924/00
摘要： A wafer includes an active region and a kerf region surrounding at least a portion of the active region. The wafer also includes a target region having a rectangular shape with a width and length greater than the width, the target region including one or more target patterns, at least one of the target patterns being formed by two sub-patterns disposed at opposing corners of target rectangle disposable within the target region.
摘要翻译：晶片包括活性区域和围绕有源区域的至少一部分的切口区域。晶片还包括具有宽度和长度大于宽度的矩形形状的目标区域，目标区域包括一个或多个目标图案，目标图案中的至少一个由两个子图案形成，两个子图案设置在目标区域内的一次性目标矩形。

8. 发明授权

US09087740B2 Fabrication of lithographic image fields using a proximity stitch metrology 有权
标题翻译：使用邻近针迹计量法制作平版印刷图像场
公开(公告)号：US09087740B2
公开(公告)日：2015-07-21
申请号：US14100297
申请日：2013-12-09
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Jaime D. Morillo , Roger J. Yerdon
IPC分类号： G06F17/50 , H01L21/66
CPC分类号： H01L22/12 , G03F7/70475
摘要： A method of determining stitching errors in multiple lithographically exposed fields on a semiconductor layer during a semiconductor manufacturing process is provided. The method may include receiving a predetermined design distance corresponding to a plurality of petals associated with the multiple lithographically exposed fields and identifying a blossom within a single field-of-view (FOV) of a metrology tool, where the blossom is formed by a non-overlapping abutment of corners corresponding to the multiple lithographically exposed fields. The blossom may include the plurality of petals associated with the multiple lithographically exposed fields. Petal position errors may then be calculated based on both a coordinate position for each of the plurality of petals within the blossom and the predetermined design distance, whereby the calculated petal position errors are indicative of stitching errors for the multiple lithographically exposed fields.
摘要翻译：提供了一种在半导体制造过程中确定半导体层上的多个光刻曝光场中的拼接误差的方法。该方法可以包括接收对应于与多个光刻曝光场相关联的多个花瓣的预定设计距离，并且在计量工具的单个视场（FOV）内识别开花，其中开花由非 - 对应于多个光刻曝光场的角的重叠基台。花可以包括与多个光刻曝光场相关联的多个花瓣。然后可以基于花内的多个花瓣中的每一个的坐标位置和预定设计距离来计算花瓣位置误差，由此计算的花瓣位置误差指示多个光刻曝光场的缝合误差。

9. 发明授权

US09059102B2 Metrology marks for unidirectional grating superposition patterning processes 有权
标题翻译：单向光栅叠加图案化程序的计量标记
公开(公告)号：US09059102B2
公开(公告)日：2015-06-16
申请号：US13968348
申请日：2013-08-15
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Nelson M. Felix , Scott D. Halle
IPC分类号： H01L21/66 , H01L21/308 , G03F7/20 , H01L23/544
CPC分类号： H01L21/308 , G03F7/70633 , H01L22/12 , H01L23/544 , H01L2924/0002 , H01L2924/00
摘要： Cut spacer reference marks, targets having such cut spacer reference marks, and methods of making the same by forming spacer gratings around grating lines on a first layer, and fabricating an angled template mask that extends across and resides at an angle with respect to such spacer gratings. Angled, cut spacer gratings are etched into a second layer using the angled template mask to superimpose at least a portion of the spacer gratings of the first layer into the second layer.
摘要翻译：切割间隔基准标记，具有这种切割的间隔物参考标记的目标以及通过在第一层上的格栅线周围形成间隔光栅而制造相同的方法，以及制造成角度的模板掩模，该模板掩模相对于这种间隔物光栅。使用成角度的模板掩模将角度切割的间隔光栅蚀刻到第二层中，以将第一层的间隔光栅的至少一部分叠加到第二层中。

10. 发明申请

US20150050755A1 METROLOGY MARKS FOR BIDIRECTIONAL GRATING SUPERPOSITION PATTERNING PROCESSES 有权
标题翻译：用于双向格栅超声波绘图方法的计量标记
公开(公告)号：US20150050755A1
公开(公告)日：2015-02-19
申请号：US13968336
申请日：2013-08-15
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Nelson M. Felix , Scott D. Halle
IPC分类号： H01L21/308 , H01L23/544 , H01L21/66
CPC分类号： H01L22/12 , G03F7/70633 , H01L22/30
摘要： Cut spacer reference marks, targets having such cut spacer reference marks, and methods of making the same by forming spacer gratings around grating lines on a first layer, and fabricating a template mask that extends across and perpendicular to such spacer gratings. Cut spacer gratings are etched into a second layer using the template mask to superimpose at least a portion of the spacer gratings of the first layer into the second layer.
摘要翻译：切割间隔物参考标记，具有这种切割间隔物参考标记的目标，以及通过在第一层上围绕光栅线形成间隔光栅而制造其的方法，以及制造横跨和垂直于这种间隔栅格延伸的模板掩模。使用模板掩模将切割的间隔光栅蚀刻到第二层中，以将第一层的间隔光栅的至少一部分叠加到第二层中。

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