专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150162249A1 FABRICATION OF LITHOGRAPHIC IMAGE FIELDS USING A PROXIMITY STITCH METROLOGY 有权
标题翻译：使用临时地图学方法制作图像图像场
公开(公告)号：US20150162249A1
公开(公告)日：2015-06-11
申请号：US14100297
申请日：2013-12-09
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Jaime D. Morillo , Roger J. Yerdon
IPC分类号： H01L21/66 , G06F17/50
CPC分类号： H01L22/12 , G03F7/70475
摘要： A method of determining stitching errors in multiple lithographically exposed fields on a semiconductor layer during a semiconductor manufacturing process is provided. The method may include receiving a predetermined design distance corresponding to a plurality of petals associated with the multiple lithographically exposed fields and identifying a blossom within a single field-of-view (FOV) of a metrology tool, where the blossom is formed by a non-overlapping abutment of corners corresponding to the multiple lithographically exposed fields. The blossom may include the plurality of petals associated with the multiple lithographically exposed fields. Petal position errors may then be calculated based on both a coordinate position for each of the plurality of petals within the blossom and the predetermined design distance, whereby the calculated petal position errors are indicative of stitching errors for the multiple lithographically exposed fields.
摘要翻译：提供了一种在半导体制造过程中确定半导体层上的多个光刻曝光场中的拼接误差的方法。该方法可以包括接收对应于与多个光刻曝光场相关联的多个花瓣的预定设计距离，并且在计量工具的单个视场（FOV）内识别开花，其中开花由非 - 对应于多个光刻曝光场的角的重叠基台。花可以包括与多个光刻曝光场相关联的多个花瓣。然后可以基于花内的多个花瓣中的每一个的坐标位置和预定设计距离来计算花瓣位置误差，由此计算的花瓣位置误差指示多个光刻曝光场的缝合误差。

2. 发明授权

US09087740B2 Fabrication of lithographic image fields using a proximity stitch metrology 有权
标题翻译：使用邻近针迹计量法制作平版印刷图像场
公开(公告)号：US09087740B2
公开(公告)日：2015-07-21
申请号：US14100297
申请日：2013-12-09
申请人： International Business Machines Corporation
发明人： Christopher P. Ausschnitt , Jaime D. Morillo , Roger J. Yerdon
IPC分类号： G06F17/50 , H01L21/66
CPC分类号： H01L22/12 , G03F7/70475
摘要： A method of determining stitching errors in multiple lithographically exposed fields on a semiconductor layer during a semiconductor manufacturing process is provided. The method may include receiving a predetermined design distance corresponding to a plurality of petals associated with the multiple lithographically exposed fields and identifying a blossom within a single field-of-view (FOV) of a metrology tool, where the blossom is formed by a non-overlapping abutment of corners corresponding to the multiple lithographically exposed fields. The blossom may include the plurality of petals associated with the multiple lithographically exposed fields. Petal position errors may then be calculated based on both a coordinate position for each of the plurality of petals within the blossom and the predetermined design distance, whereby the calculated petal position errors are indicative of stitching errors for the multiple lithographically exposed fields.
摘要翻译：提供了一种在半导体制造过程中确定半导体层上的多个光刻曝光场中的拼接误差的方法。该方法可以包括接收对应于与多个光刻曝光场相关联的多个花瓣的预定设计距离，并且在计量工具的单个视场（FOV）内识别开花，其中开花由非 - 对应于多个光刻曝光场的角的重叠基台。花可以包括与多个光刻曝光场相关联的多个花瓣。然后可以基于花内的多个花瓣中的每一个的坐标位置和预定设计距离来计算花瓣位置误差，由此计算的花瓣位置误差指示多个光刻曝光场的缝合误差。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式