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1. 发明申请

US20130328184A1 COMPOSITE MEMBER INCLUDING SUBSTRATE MADE OF COMPOSITE MATERIAL 有权
标题翻译：复合材料包括复合材料的基材
公开(公告)号：US20130328184A1
公开(公告)日：2013-12-12
申请号：US14000247
申请日：2012-02-20
申请人： Isao Iwayama , Taichiro Nishikawa , Toshiya Ikeda , Shigeki Koyama
发明人： Isao Iwayama , Taichiro Nishikawa , Toshiya Ikeda , Shigeki Koyama
IPC分类号： C22C29/06 , H01L23/34
CPC分类号： C22C29/065 , B22F2999/00 , C04B41/009 , C04B41/515 , C04B41/88 , C04B2111/00844 , C22C2001/1073 , C22C2204/00 , C25D7/12 , H01L23/15 , H01L23/34 , H01L23/3731 , H01L23/3735 , H01L23/3736 , H01L2924/0002 , Y10T428/24612 , Y10T428/2495 , Y10T428/263 , B22F3/02 , B22F3/10 , B22F3/26 , C25D7/00 , C23C18/00 , H01L2924/00 , C04B35/565 , C04B38/00 , C04B41/4523
摘要： A composite member has a substrate made of a composite material having SiC combined with magnesium or a magnesium alloy, and has a warpage degree of not less than 0.01×10−3 and not more than 10×10−3, the warpage degree being defined as lmax/Dmax, where lmax being a difference between a maximum value and a minimum value of surface displacement of one surface of composite member measured along a longest side thereof, and Dmax being a length of the longest side. Thereby, a composite member capable of efficiently dissipating heat to an installation object, a heat-dissipating member using the composite member, and a semiconductor device having the heat-dissipating member are provided.
摘要翻译：复合构件具有由具有与镁或镁合金组合的SiC的复合材料制成的基板，并且具有不小于0.01×10-3且不大于10×10-3的翘曲度，所述翘曲度被限定作为lmax / Dmax，其中lmax是沿其最长侧测量的复合构件的一个表面的表面位移的最大值和最小值之间的差，Dmax是最长侧的长度。因此，提供一种能够有效地散热到安装对象的复合构件，使用该复合构件的散热构件以及具有该散热构件的半导体装置。

2. 发明授权

US09556501B2 Magnesium-based composite member, heat radiation member, and semiconductor device 有权
标题翻译：镁基复合构件，散热构件和半导体装置
公开(公告)号：US09556501B2
公开(公告)日：2017-01-31
申请号：US13635988
申请日：2011-03-16
申请人： Isao Iwayama , Taichiro Nishikawa , Yoshiyuki Takaki , Toshiya Ikeda , Shigeki Koyama
发明人： Isao Iwayama , Taichiro Nishikawa , Yoshiyuki Takaki , Toshiya Ikeda , Shigeki Koyama
IPC分类号： H01L23/10 , C22C1/10 , C22C29/06 , H01L23/373 , H01L23/40 , B22F3/11 , C22C23/00 , C22C23/02 , C22C47/06 , C22C49/04 , C22C49/14
CPC分类号： C22C1/1068 , B22F3/11 , C22C1/1015 , C22C23/00 , C22C23/02 , C22C29/065 , C22C29/067 , C22C47/06 , C22C49/04 , C22C49/14 , H01L23/3733 , H01L23/3736 , H01L23/4006 , H01L2924/0002 , Y10T428/12007 , Y10T428/12361 , H01L2924/00
摘要： A magnesium-based composite member is provided with a through hole through which a fastening member for attachment to a fixing target is to be inserted. A substrate is provided with a substrate hole through which the fastening member is to be inserted, and made of a composite material which is a composite of SiC and a matrix metal which is any of magnesium and a magnesium alloy. A receiving portion is attached to the substrate and made of a metal material different from the matrix metal. The receiving portion is provided with a receiving portion hole through which the fastening member is to be inserted, and at least a part of an inner circumferential surface of the through hole is formed from an inner circumferential surface of the receiving portion hole.
摘要翻译：镁基复合构件设置有用于插入用于附接到固定目标的紧固构件的通孔。衬底上设置有用于插入紧固构件的衬底孔，并且由复合材料制成，该复合材料是SiC和镁和镁合金中任一种的基体金属的复合材料。接收部分附接到基底并由与基体金属不同的金属材料制成。接收部分设置有接收部分孔，通过该接收部分孔插入紧固构件，并且通孔的内周面的至少一部分由接纳部孔的内周面形成。

3. 发明申请

US20130009301A1 MAGNESIUM-BASED COMPOSITE MEMBER, HEAT RADIATION MEMBER, AND SEMICONDUCTOR DEVICE 有权
标题翻译：基于镁的复合构件，热辐射构件和半导体器件
公开(公告)号：US20130009301A1
公开(公告)日：2013-01-10
申请号：US13635988
申请日：2011-03-16
申请人： Isao Iwayama , Taichiro Nishikawa , Yoshiyuki Takaki , Toshiya Ikeda , Shigeki Koyama
发明人： Isao Iwayama , Taichiro Nishikawa , Yoshiyuki Takaki , Toshiya Ikeda , Shigeki Koyama
IPC分类号： B32B3/24 , H01L23/34 , F28F21/08
CPC分类号： C22C1/1068 , B22F3/11 , C22C1/1015 , C22C23/00 , C22C23/02 , C22C29/065 , C22C29/067 , C22C47/06 , C22C49/04 , C22C49/14 , H01L23/3733 , H01L23/3736 , H01L23/4006 , H01L2924/0002 , Y10T428/12007 , Y10T428/12361 , H01L2924/00
摘要： A magnesium-based composite member is provided with a through hole through which a fastening member for attachment to a fixing target is to be inserted. A substrate is provided with a substrate hole through which the fastening member is to be inserted, and made of a composite material which is a composite of SiC and a matrix metal which is any of magnesium and a magnesium alloy. A receiving portion is attached to the substrate and made of a metal material different from the matrix metal. The receiving portion is provided with a receiving portion hole through which the fastening member is to be inserted, and at least a part of an inner circumferential surface of the through hole is formed from an inner circumferential surface of the receiving portion hole.
摘要翻译：镁基复合构件设置有用于插入用于附接到固定目标的紧固构件的通孔。衬底上设置有用于插入紧固构件的衬底孔，并且由复合材料制成，该复合材料是SiC和镁和镁合金中任一种的基体金属的复合材料。接收部分附接到基底并由与基体金属不同的金属材料制成。接收部分设置有接收部分孔，通过该接收部分孔插入紧固构件，并且通孔的内周面的至少一部分由接纳部孔的内周面形成。

4. 发明授权

US09347120B2 Composite member including substrate made of composite material 有权
标题翻译：复合构件包括由复合材料制成的基底
公开(公告)号：US09347120B2
公开(公告)日：2016-05-24
申请号：US14000247
申请日：2012-02-20
申请人： Isao Iwayama , Taichiro Nishikawa , Toshiya Ikeda , Shigeki Koyama
发明人： Isao Iwayama , Taichiro Nishikawa , Toshiya Ikeda , Shigeki Koyama
IPC分类号： C22C29/06 , H01L23/15 , H01L23/373 , H01L23/34 , C25D7/12 , C04B41/88 , C04B41/00 , C04B41/51 , C22C1/10 , C04B111/00
CPC分类号： C22C29/065 , B22F2999/00 , C04B41/009 , C04B41/515 , C04B41/88 , C04B2111/00844 , C22C2001/1073 , C22C2204/00 , C25D7/12 , H01L23/15 , H01L23/34 , H01L23/3731 , H01L23/3735 , H01L23/3736 , H01L2924/0002 , Y10T428/24612 , Y10T428/2495 , Y10T428/263 , B22F3/02 , B22F3/10 , B22F3/26 , C25D7/00 , C23C18/00 , H01L2924/00 , C04B35/565 , C04B38/00 , C04B41/4523
摘要： A composite member has a substrate made of a composite material having SiC combined with magnesium or a magnesium alloy, and has a warpage degree of not less than 0.01×10−3 and not more than 10×10−3, the warpage degree being defined as lmax/Dmax, where lmax being a difference between a maximum value and a minimum value of surface displacement of one surface of composite member measured along a longest side thereof, and Dmax being a length of the longest side. Thereby, a composite member capable of efficiently dissipating heat to an installation object, a heat-dissipating member using the composite member, and a semiconductor device having the heat-dissipating member are provided.
摘要翻译：复合构件具有由具有与镁或镁合金组合的SiC的复合材料制成的基板，并且具有不小于0.01×10-3且不大于10×10-3的翘曲度，所述翘曲度被限定作为lmax / Dmax，其中lmax是沿其最长侧测量的复合构件的一个表面的表面位移的最大值和最小值之间的差，Dmax是最长侧的长度。因此，提供一种能够有效地散热到安装对象的复合构件，使用该复合构件的散热构件以及具有该散热构件的半导体装置。

5. 发明申请

US20110256419A1 COMPOSITE MEMBER 有权
标题翻译：复合材料
公开(公告)号：US20110256419A1
公开(公告)日：2011-10-20
申请号：US13122365
申请日：2009-10-02
申请人： Isao Iwayama , Yoshihiro Nakai , Taichiro Nishikawa , Yoshiyuki Takaki , Misato Kusakari , Toshiya Ikeda
发明人： Isao Iwayama , Yoshihiro Nakai , Taichiro Nishikawa , Yoshiyuki Takaki , Misato Kusakari , Toshiya Ikeda
IPC分类号： B32B15/04 , C04B35/565 , B32B5/16 , B32B3/30 , B32B5/00 , B22D19/00 , B32B3/00
CPC分类号： C09K5/14 , B22D19/14 , B22F2998/00 , B32B15/01 , C22C1/1036 , C22C1/1068 , C22C29/02 , C22C29/065 , C22C32/00 , C22C32/0063 , H01L23/3733 , H01L23/3736 , H01L23/3738 , H01L2924/0002 , Y10T428/12049 , Y10T428/12576 , Y10T428/24355 , Y10T428/24479 , Y10T428/249969 , Y10T428/259 , B22F1/02 , H01L2924/00
摘要： A composite member suitable for a heat radiation member of a semiconductor element and a method of manufacturing the same are provided. This composite member is a composite of magnesium or a magnesium alloy and SiC, and it has porosity lower than 3%. This composite member can be manufactured by forming an oxide film on a surface of raw material SiC, arranging coated SiC having the oxide film formed in a cast, and infiltrating this coated SiC aggregate with a molten metal (magnesium or the magnesium alloy). The porosity of the composite member can be lowered by improving wettability between SiC and the molten metal by forming the oxide film. According to this manufacturing method, a composite member having excellent thermal characteristics such as a coefficient of thermal expansion not lower than 4 ppm/K and not higher than 10 ppm/K and thermal conductivity not lower than 180 W/m·K can be manufactured.
摘要翻译：提供一种适用于半导体元件的散热构件的复合构件及其制造方法。该复合构件是镁或镁合金与SiC的复合材料，其孔隙率低于3％。该复合部件可以通过在原料SiC的表面上形成氧化膜，配置具有形成于铸型中的氧化膜的被覆SiC，并用熔融金属（镁或镁合金）渗透该被覆SiC集合体来制造。通过形成氧化膜，可以通过改善SiC与熔融金属之间的润湿性来降低复合构件的孔隙率。根据该制造方法，可以制造具有不低于4ppm / K且不高于10ppm / K的热膨胀系数以及不低于180W / m·K的热导率的热特性优异的复合构件。

6. 发明授权

US09028959B2 Composite member 有权
标题翻译：复合材料
公开(公告)号：US09028959B2
公开(公告)日：2015-05-12
申请号：US13122365
申请日：2009-10-02
申请人： Isao Iwayama , Yoshihiro Nakai , Taichiro Nishikawa , Yoshiyuki Takaki , Misato Kusakari , Toshiya Ikeda
发明人： Isao Iwayama , Yoshihiro Nakai , Taichiro Nishikawa , Yoshiyuki Takaki , Misato Kusakari , Toshiya Ikeda
IPC分类号： C04B41/88 , B22D19/14 , C22C1/10 , C22C29/06 , C22C32/00
CPC分类号： C09K5/14 , B22D19/14 , B22F2998/00 , B32B15/01 , C22C1/1036 , C22C1/1068 , C22C29/02 , C22C29/065 , C22C32/00 , C22C32/0063 , H01L23/3733 , H01L23/3736 , H01L23/3738 , H01L2924/0002 , Y10T428/12049 , Y10T428/12576 , Y10T428/24355 , Y10T428/24479 , Y10T428/249969 , Y10T428/259 , B22F1/02 , H01L2924/00
摘要： A composite member suitable for a heat radiation member of a semiconductor element and a method of manufacturing the same are provided. This composite member is a composite of magnesium or a magnesium alloy and SiC, and it has porosity lower than 3%. This composite member can be manufactured by forming an oxide film on a surface of raw material SiC, arranging coated SiC having the oxide film formed in a cast, and infiltrating this coated SiC aggregate with a molten metal (magnesium or the magnesium alloy). The porosity of the composite member can be lowered by improving wettability between SiC and the molten metal by forming the oxide film. According to this manufacturing method, a composite member having excellent thermal characteristics such as a coefficient of thermal expansion not lower than 4 ppm/K and not higher than 10 ppm/K and thermal conductivity not lower than 180 W/m·K can be manufactured.
摘要翻译：提供一种适用于半导体元件的散热构件的复合构件及其制造方法。该复合构件是镁或镁合金与SiC的复合材料，其孔隙率低于3％。该复合部件可以通过在原料SiC的表面上形成氧化膜，配置具有形成于铸型中的氧化膜的被覆SiC，并用熔融金属（镁或镁合金）渗透该被覆SiC集合体来制造。通过形成氧化膜，可以通过改善SiC与熔融金属之间的润湿性来降低复合构件的孔隙率。根据该制造方法，可以制造具有不低于4ppm / K且不高于10ppm / K的热膨胀系数以及不低于180W / m·K的热导率的热特性优异的复合构件。

7. 发明授权

US07841380B2 Producing method for magnesium alloy material 有权
标题翻译：镁合金材料的生产方法
公开(公告)号：US07841380B2
公开(公告)日：2010-11-30
申请号：US11630977
申请日：2005-06-28
申请人： Masatada Numano , Yoshihiro Nakai , Toshiya Ikeda , Taichiro Nishikawa
发明人： Masatada Numano , Yoshihiro Nakai , Toshiya Ikeda , Taichiro Nishikawa
IPC分类号： B22D11/00 , B22D11/06 , B22D17/00 , C23F3/00 , B23P9/00
CPC分类号： B22D11/001 , B22D11/0648 , B22D11/1206 , C22C23/00 , C22C23/02 , C22C23/04 , C22F1/06 , Y10T428/12 , Y10T428/12993
摘要： A magnesium alloy material such as a magnesium alloy cast material or a magnesium alloy rolled material, excellent in mechanical characteristics and surface precision, a producing method capable of stably producing such material, a magnesium alloy formed article utilizing the rolled material, and a producing method therefor. The magnesium material producing method includes a melting step of melting a magnesium alloy in a melting furnace to obtain a molten metal, a transfer step of transferring the molten metal from the melting furnace to a molten metal reservoir, and a casting step of supplying a movable mold with the molten metal from the molten metal reservoir, through a pouring gate, and solidifying the molten metal to continuously produce a cast material. Parts are formed by a low-oxygen material having an oxygen content of 20 mass % or less. The cast material is given a thickness of from 0.1 to 10 mm.
摘要翻译：一种镁合金材料，如镁合金铸造材料或镁合金轧制材料，机械特性和表面精度优良，能够稳定生产这种材料的制造方法，使用轧制材料的镁合金成形体，以及制造方法因此。镁材料的制造方法包括：在熔融炉中熔融镁合金以熔融金属熔化的熔融步骤，将熔融金属从熔融炉转移到熔融金属容器的转移步骤;以及铸造步骤，用来自熔融金属储存器的熔融金属模铸，通过浇注浇口浇铸，并固化熔融金属以连续地生产铸造材料。部分由氧含量为20质量％以下的低氧材料形成。铸造材料的厚度为0.1-10mm。

8. 发明授权

US09943904B2 Producing method for magnesium alloy material 有权
公开(公告)号：US09943904B2
公开(公告)日：2018-04-17
申请号：US12909383
申请日：2010-10-21
申请人： Masatada Numano , Yoshihiro Nakai , Toshiya Ikeda , Taichiro Nishikawa
发明人： Masatada Numano , Yoshihiro Nakai , Toshiya Ikeda , Taichiro Nishikawa
IPC分类号： B32B33/00 , B22D11/00 , B22D11/06 , B22D11/12 , C22C23/00 , C22C23/02 , C22C23/04 , C22F1/06
CPC分类号： B22D11/001 , B22D11/0648 , B22D11/1206 , C22C23/00 , C22C23/02 , C22C23/04 , C22F1/06 , Y10T428/12 , Y10T428/12993
摘要： A magnesium alloy material such as a magnesium alloy cast material or a magnesium alloy rolled material, excellent in mechanical characteristics and surface precision, a producing method capable of stably producing such material, a magnesium alloy formed article utilizing the rolled material, and a producing method therefor. The magnesium material includes a melting step of melting a magnesium alloy in a melting furnace to obtain a molten metal, a transfer step of transferring the molten metal from the melting furnace to a molten metal reservoir, and a casting step of supplying a movable mold with the molten metal from the molten metal reservoir, through a pouring gate, and solidifying the molten metal to continuously produce a cast material. Parts are formed by a low-oxygen material having an oxygen content of 20 mass % or less. The cast material is given a thickness of from 0.1 to 10 mm.

9. 发明申请

US20080311423A1 Producing Method for Magnesium Alloy Material 有权
标题翻译：镁合金材料的生产方法
公开(公告)号：US20080311423A1
公开(公告)日：2008-12-18
申请号：US11630977
申请日：2005-06-28
申请人： Masatada Numano , Yoshihiro Nakai , Toshiya Ikeda , Taichiro Nishikawa
发明人： Masatada Numano , Yoshihiro Nakai , Toshiya Ikeda , Taichiro Nishikawa
IPC分类号： B32B33/00 , B22D11/00 , B22D11/06 , C22F1/06 , B21D31/00 , B21D22/00 , C22C23/00 , B32B15/00
CPC分类号： B22D11/001 , B22D11/0648 , B22D11/1206 , C22C23/00 , C22C23/02 , C22C23/04 , C22F1/06 , Y10T428/12 , Y10T428/12993
摘要： The invention is to provide a magnesium alloy material such as a magnesium alloy cast material or a magnesium alloy rolled material, excellent in mechanical characteristics and surface precision, a producing method capable of stably producing such material, a magnesium alloy formed article utilizing the rolled material, and a producing method therefor.The invention provides a producing method for a magnesium alloy material, including a melting step of melting a magnesium alloy in a melting furnace to obtain a molten metal, a transfer step of transferring the molten metal from the melting furnace to a molten metal reservoir, and a casting step of supplying a movable mold with the molten metal from the molten metal reservoir, through a pouring gate, and solidifying the molten metal to continuously produce a cast material. In a process from the melting step to the casting step, parts contacted by the molten metal are formed by a low-oxygen material having an oxygen content of 20 mass % or less. The cast material is given a thickness of from 0.1 to 10 mm, thereby providing a magnesium alloy material such as a such as a magnesium alloy cast material or a magnesium alloy rolled material, excellent in mechanical characteristics and surface precision.
摘要翻译：本发明提供一种镁合金材料，例如镁合金铸造材料或镁合金轧制材料，其机械性能和表面精度优良，能够稳定地生产这种材料的制造方法，利用轧制材料的镁合金成形体，及其制造方法。本发明提供了一种镁合金材料的制造方法，其包括在熔融炉中熔融镁合金以熔融金属熔化的熔融步骤，将熔融金属从熔融炉转移到熔融金属槽的转移步骤，以及浇铸步骤，通过浇注浇口将来自熔融金属储存器的熔融金属供给可移动模具，并固化熔融金属以连续地生产铸造材料。在从熔融步骤到铸造步骤的过程中，由熔融金属接触的部件由氧含量为20质量％以下的低氧材料形成。铸造材料的厚度为0.1〜10mm，由此提供机械特性和表面精度优异的镁合金铸造材料或镁合金轧制材料等镁合金材料。

10. 发明申请

US20100206537A1 HEAT SPREADER FOR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于半导体器件的热交换器及其制造方法
公开(公告)号：US20100206537A1
公开(公告)日：2010-08-19
申请号：US12599635
申请日：2008-05-20
申请人： Toshiya Ikeda , Shigeki Koyama , Shinya Nishida
发明人： Toshiya Ikeda , Shigeki Koyama , Shinya Nishida
IPC分类号： F28F7/00 , B23P15/26
CPC分类号： H01L23/3735 , H01L23/3677 , H01L23/473 , H01L2224/32225 , H01L2924/1305 , H01L2924/13055 , H01L2924/3011 , Y10T29/49393 , H01L2924/00
摘要： Provided are a heat spreader for a semiconductor device, which can be joined such that a multitude of pin-shaped fins are not easily fractured even when the heat spreader for a semiconductor device is incorporated in a heat dissipation structure for a semiconductor device, in which direct cooling is performed by using water, and a method for manufacturing the heat spreader for a semiconductor device. The heat spreader (1) for a semiconductor device comprises: a plurality of columnar members (13) joined onto at least one of surfaces of a plate-like member (11, 12) by stud welding; and a joining layer (14) formed between the plate-like member (11, 12) and the columnar members (13). The plate-like member (11, 12) includes a base material (11) and surface layers (12). The surface layers (12) and the columnar members (13) are made of a material containing aluminum or an aluminum alloy. A thickness of the plate-like member (11, 12) is 0.5 mm through 6 mm and a thickness of each of the surface layers (12) is 0.1 mm through 1 mm. The joining layer (14) has a joining interface (15) on a boundary with the plate-like member (11, 12). A proportion of an area of the joining interface (15) being present in the surface layer (12) is greater than or equal to 50% and less than or equal to 100%, converted in terms of a plane projected to the one of the surfaces of the plate-like member.
摘要翻译：提供一种用于半导体器件的散热器，其可以被接合，使得即使当用于半导体器件的散热结构中并入半导体器件的散热结构时，多个销状翅片也不容易断裂，其中通过使用水进行直接冷却，以及制造半导体装置的散热器的方法。用于半导体器件的散热器（1）包括：多个柱状构件（13），通过螺柱焊接在板状构件（11,12）的至少一个表面上; 以及形成在所述板状构件（11,12）和所述柱状构件（13）之间的接合层（14）。板状构件（11,12）包括基材（11）和表层（12）。表面层（12）和柱状构件（13）由含有铝或铝合金的材料制成。板状部件（11,12）的厚度为0.5mm〜6mm，各表面层（12）的厚度为0.1mm〜1mm。接合层（14）在与板状构件（11,12）的边界上具有接合界面（15）。存在于表面层（12）中的接合界面（15）的面积的一部分大于或等于50％且小于或等于100％，根据投影到所述表面层板状构件的表面。

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