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    • 5. 发明申请
    • Nitrocarburized microalloyed steel member
    • 氮碳共渗微合金钢构件
    • US20070144619A1
    • 2007-06-28
    • US11437872
    • 2006-05-22
    • Tetsuya AsaiYoshihiro TakitaniMasaki AmanoMakoto HoboKazuyoshi KimuraKatsunori Takada
    • Tetsuya AsaiYoshihiro TakitaniMasaki AmanoMakoto HoboKazuyoshi KimuraKatsunori Takada
    • C23C8/32
    • C22C38/60C22C38/001C22C38/002C22C38/02C22C38/04C22C38/42C22C38/50C23C8/32F16C3/08F16C2204/64
    • A nitrocarburized microalloyed steel member consists of a microalloyed steel that includes a nitrocarburized layer on a surface, a cross-sectional structure of which steel except for the nitrocarburized layer includes a ferrite and pearlite structure. The microalloyed steel mainly consists of Fe and has a composition: C having a content of 0.30 mass % or more and 0.50 mass % or less; Si having a content of 0.05 mass % or more and 0.30 mass % or less; Mn having a content of 0.50 mass % or more and 1.00 mass % or less; S having a content of 0.03 mass % or more and 0.20 mass % or less; Cu having a content of 0.05 mass % or more and 0.60 mass % or less; Ni having a content of 0.02 mass % or more and 1.00 mass % or less; and Cr having a content of 0.05 mass % or more and 0.30 mass % or less. If the contents of the Cu, the Ni, and the Cr are represented by WCu, WNi, and WCr mass %, respectively, and composition parameters F1 and F2 are 185WCr+50WCu and 8+4WNi+1.5WCu−44WCr, respectively, then the composition parameters F1 and F2 satisfy F1>20 and F2>0.
    • 氮碳共渗微合金钢构件由包括表面上的氮碳共渗层的微合金化钢构成,除了氮碳共渗层之外的钢的截面结构包括铁素体和珠光体组织。 微合金化钢主要由Fe组成,组成为:含有0.30质量%以上至0.50质量%以下的C; Si含量为0.05质量%以上且0.30质量%以下的Si; Mn为0.50质量%以上且1.00质量%以下的Mn; S的含量为0.03质量%以上且0.20质量%以下; Cu含量为0.05质量%以上且0.60质量%以下的Cu; 含量为0.02质量%以上且1.00质量%以下的Ni; Cr为0.05质量%以上且0.30质量%以下的Cr。 如果Cu,Ni和Cr的含量分别由WCu,WNi和WCr质量%表示,组成参数F 1和F 2分别为185WCr + 50WCu和8 + 4WNi + 1.5WCu-44WCr ,则组成参数F 1和F 2满足F 1> 20且F 2> 0。
    • 6. 发明授权
    • Reference voltage generation circuit for supplying a constant reference voltage using a linear resistance
    • 参考电压产生电路,用于使用线性电阻提供恒定的参考电压
    • US08350553B2
    • 2013-01-08
    • US12670199
    • 2008-07-16
    • Tetsuya HiroseTetsuya AsaiYoshihito AmemiyaKenichi Ueno
    • Tetsuya HiroseTetsuya AsaiYoshihito AmemiyaKenichi Ueno
    • G05F3/16G05F1/00
    • G05F3/242
    • An object of the present invention is to generate a reference voltage that is stable in relation to manufacturing process variations, by matching the operating regions of the MOSFETs contributing to generation of the reference voltage. The reference voltage generation circuit 1 includes: a current mirror unit 2 that generates a current IP at current output terminals PC1 to PC5; a MOSFET 6b having a drain terminal connected to the current output terminal PC2 side, a source terminal connected to ground side, and a gate terminal connected to a reference voltage output terminal POUT; a combined voltage generating unit 8 having two MOSFET pairs in which currents are generated at drain terminals from the current output terminals PC3 to PC5, source terminals are mutually connected, and a combined voltage with a positive temperature coefficient is generated; and a MOSFET 9 in which current is generated at a drain terminal from the current mirror unit 2, a gate terminal is connected to the input of the combined voltage generating unit 8, a source terminal is connected to the ground side, and a voltage with a negative temperature coefficient is generated.
    • 本发明的目的是通过匹配有助于产生参考电压的MOSFET的工作区域来生成与制造工艺变化相关的稳定的参考电压。 参考电压产生电路1包括:电流反射镜单元2,其在当前输出端PC1至PC5处产生当前IP; 具有连接到电流输出端子PC2侧的漏极端子的MOSFET 6b,连接到接地侧的源极端子和连接到基准电压输出端子POUT的栅极端子; 具有两个MOSFET对的组合电压产生单元8,其中在电流输出端子PC3至PC5的漏极端产生电流,源极端子相互连接,产生具有正温度系数的组合电压; 以及在电流镜单元2的漏极端产生电流的MOSFET9,栅极端子与组合电压生成单元8的输入端连接,源极端子与接地侧连接, 产生负温度系数。
    • 7. 发明申请
    • REFERENCE VOLTAGE GENERATION CIRCUIT
    • 参考电压发生电路
    • US20100164461A1
    • 2010-07-01
    • US12670199
    • 2008-07-16
    • Tetsuya HiroseTetsuya AsaiYoshihito AmemiyaKenichi Ueno
    • Tetsuya HiroseTetsuya AsaiYoshihito AmemiyaKenichi Ueno
    • G05F1/10
    • G05F3/242
    • An object of the present invention is to generate a reference voltage that is stable in relation to manufacturing process variations, by matching the operating regions of the MOSFETs contributing to generation of the reference voltage. The reference voltage generation circuit 1 includes: a current mirror unit 2 that generates a current IP at current output terminals PC1 to PC5; a MOSFET 6b having a drain terminal connected to the current output terminal PC2 side, a source terminal connected to ground side, and a gate terminal connected to a reference voltage output terminal POUT; a combined voltage generating unit 8 having two MOSFET pairs in which currents are generated at drain terminals from the current output terminals PC3 to PC5, source terminals are mutually connected, and a combined voltage with a positive temperature coefficient is generated; and a MOSFET 9 in which current is generated at a drain terminal from the current mirror unit 2, a gate terminal is connected to the input of the combined voltage generating unit 8, a source terminal is connected to the ground side, and a voltage with a negative temperature coefficient is generated.
    • 本发明的目的是通过匹配有助于产生参考电压的MOSFET的工作区域来生成与制造工艺变化相关的稳定的参考电压。 参考电压产生电路1包括:电流反射镜单元2,其在当前输出端PC1至PC5处产生当前IP; 具有连接到电流输出端子PC2侧的漏极端子的MOSFET 6b,连接到接地侧的源极端子和连接到基准电压输出端子POUT的栅极端子; 具有两个MOSFET对的组合电压产生单元8,其中在电流输出端子PC3至PC5的漏极端产生电流,源极端子相互连接,产生具有正温度系数的组合电压; 以及在电流镜单元2的漏极端产生电流的MOSFET9,栅极端子与组合电压生成单元8的输入端连接,源极端子与接地侧连接, 产生负温度系数。