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    • 4. 发明授权
    • Wavelength-selective devices using silicon-on-insulator
    • 使用绝缘体上硅的波长选择器件
    • US5559912A
    • 1996-09-24
    • US529933
    • 1995-09-15
    • Farid AgahiBardia PezeshkiJeffrey A. KashJeffrey J. Welser
    • Farid AgahiBardia PezeshkiJeffrey A. KashJeffrey J. Welser
    • G02B6/00G02B6/12G02F1/313H01L31/0232H01L31/10G02B6/26H04J14/02
    • G02B6/12007G02F1/3133
    • This invention describes how commercial silicon-on-insulator material can be used to fabricate both wavelength filters and wavelength-selective photodetectors. The silicon-on-insulator substrates have a buried silicon dioxide layer and a thin top silicon layer and are manufactured for high speed electonics applications. However, in this invention, the thin silicon layer is used as the core of a waveguide and the buried silicon dioxide as a lower cladding region. Another cladding layer and a low index waveguide is fabricated on the commercial substrate to form an asymmetric waveguide coupler structure. The added low index waveguide and the original thin silicon layer form the two waveguides of the coupler. Since the the two waveguide materials have very different indices of refraction, they are only phase-matched at one wavelength. Thus for a given thickness of materials, only one wavelength couples between the two waveguides. By adding an absorptive layer in the silicon waveguide and electrical contacts, wavelength sensitive photodetection is obtained. The buried insulator layer is the key to device operation, providing a very low index buried cladding region.
    • 本发明描述了商业硅绝缘体材料如何用于制造波长滤波器和波长选择性光电检测器。 绝缘体上硅衬底具有埋置的二氧化硅层和薄的顶部硅层,并且被制造用于高速电子学应用。 然而,在本发明中,薄硅层用作波导的核心,埋入的二氧化硅用作下部包层区域。 在商业基板上制造另一包层和低折射率波导以形成非对称波导耦合器结构。 添加的低折射率波导和原始薄硅层形成耦合器的两个波导。 由于两个波导材料具有非常不同的折射率,它们仅在一个波长处相位匹配。 因此,对于给定厚度的材料,在两个波导之间仅耦合一个波长。 通过在硅波导和电触点中添加吸收层,获得波长敏感的光电检测。 掩埋绝缘体层是器件操作的关键,提供了非常低折射率的掩埋包层区域。