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1. 发明申请

US20120056293A1 SEMICONDUCTOR OPTICAL ELEMENT 失效
标题翻译：半导体光学元件
公开(公告)号：US20120056293A1
公开(公告)日：2012-03-08
申请号：US13279460
申请日：2011-10-24
申请人： Kazuhisa Takagi
发明人： Kazuhisa Takagi
IPC分类号： H01L31/0232
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1053 , H01S5/1057 , H01S5/124 , H01S5/2222 , H01S5/227 , H01S5/3412 , H01S5/509
摘要： A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.
摘要翻译：半导体光学元件具有包括量子点的有源层。光子密度相对较高的有源层部分中的谐振器方向的量子点的密度相对于有源层的一部分中的光子的密度相对较低的部分的量子点的密度而增加。

2. 发明授权

US07344905B2 Spatial bandgap modifications and energy shift of semiconductor structures 有权
标题翻译：半导体结构的空间带隙修改和能量偏移
公开(公告)号：US07344905B2
公开(公告)日：2008-03-18
申请号：US10824838
申请日：2004-04-15
申请人： Peidong Wang , Chih-Cheng Lu , Daryoosh Vakhshoori
发明人： Peidong Wang , Chih-Cheng Lu , Daryoosh Vakhshoori
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/06255 , H01S5/101 , H01S5/1057 , H01S5/34 , H01S5/3413 , H01S2301/04
摘要： Semiconductor substrate is disclosed having quantum wells having first bandgap, and quantum wells having second bandgap less than second bandgap. Semiconductor structure is disclosed comprising substrate having quantum wells having given bandgap, other quantum wells modified to bandgap greater than given bandgap. Semiconductor substrate is disclosed comprising wafer having quantum wells, section of first bandgap, and section of second bandgap greater than first bandgap. Method for forming semiconductor substrate is provided, comprising providing wafer having given bandgap, depositing dielectric cap on portion and rapid thermal annealing to tuned bandgap greater than given bandgap. Semiconductor structure is disclosed comprising substrate having quantum wells modified by depositing cap and rapid thermal annealing to tuned bandgap greater than given bandgap. Method for forming semiconductor substrate is disclosed, comprising providing wafer having quantum wells having given bandgap, depositing cap on portion and rapid thermal annealing to tuned bandgap greater than given bandgap.
摘要翻译：公开了具有量子阱具有第一带隙的半导体衬底，以及具有小于第二带隙的第二带隙的量子阱。公开了半导体结构，其包括具有给定带隙的量子阱的衬底，其他量子阱被修改为具有大于给定带隙的带隙。公开了半导体衬底，其包括具有量子阱的晶片，第一带隙的截面以及大于第一带隙的第二带隙的截面。提供了形成半导体衬底的方法，其包括提供具有给定带隙的晶片，在部分上沉积介电帽和快速热退火至大于给定带隙的调谐带隙。公开了半导体结构，其包括具有通过沉积帽和快速热退火而修改的量子阱的衬底，所述量子阱具有大于给定带隙的调谐带隙。公开了一种用于形成半导体衬底的方法，其包括提供具有给定带隙的量子阱的晶片，将部分上的沉积帽和快速热退火至大于给定带隙的调谐带隙。

3. 发明申请

US20050265647A1 System for amplifying optical signals 失效
标题翻译：用于放大光信号的系统
公开(公告)号：US20050265647A1
公开(公告)日：2005-12-01
申请号：US10632779
申请日：2003-08-01
申请人： Daryoosh Vakhshoori , Masud Azimi , Min Jiang , Kevin Knopp , Peidong Wang
发明人： Daryoosh Vakhshoori , Masud Azimi , Min Jiang , Kevin Knopp , Peidong Wang
IPC分类号： G02F1/01 , G02F1/295 , H01S3/00 , H01S3/094 , H01S3/0941 , H01S3/30 , H01S5/026 , H01S5/028 , H01S5/062 , H01S5/10 , H04B10/17 , H04J14/02
CPC分类号： H04B10/2916 , G02B6/4213 , G02B6/4215 , H01S3/005 , H01S3/0064 , H01S3/094096 , H01S3/0941 , H01S3/302 , H01S5/0265 , H01S5/028 , H01S5/06206 , H01S5/101 , H01S5/1057 , H01S2301/04 , H04J14/02
摘要： The invention is in the field of distributed Raman amplification for digital and analog transmission applications and other applications, e.g., instrumentation and imaging applications, including HFC-CATV applications. In particular, the invention uses a high power broadband source of amplified spontaneous emission (ASE) as the Raman pump source for improved system performance. The invention also includes methods for constructing such a high-power broadband Raman pump.
摘要翻译：本发明在分布式拉曼放大领域用于数字和模拟传输应用以及其它应用，例如包括HFC-CATV应用的仪器和成像应用。特别地，本发明使用放大自发发射（ASE）的高功率宽带源作为拉曼泵浦源，以改善系统性能。本发明还包括构建这种高功率宽带拉曼泵的方法。

4. 发明授权

US06944197B2 Low crosstalk optical gain medium and method for forming same 失效
标题翻译：低串扰光增益介质及其形成方法
公开(公告)号：US06944197B2
公开(公告)日：2005-09-13
申请号：US10179287
申请日：2002-06-26
申请人： Fow-Sen Choa
发明人： Fow-Sen Choa
IPC分类号： H01S5/10 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/50 , H01S3/14
CPC分类号： B82Y20/00 , H01S5/1057 , H01S5/106 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/50
摘要： An optical gain medium, and a method for forming the same, is provided that exhibits lower wavelength crosstalk when configured as an optical amplifier than prior art optical gain media. The optical gain medium of the present invention includes a buried heterostructure waveguide fabricated in a multiple quantum well (MQW) region. The MQW region in which the buried heterostructure waveguide is located exhibits a continuously changing bandgap as a function of position along the waveguide direction, preferably such that the gain provided by the optical gain medium changes exponentially as a function of position along the waveguide direction. In a preferred embodiment, the MQW region in which the buried heterostructure waveguide is buried is grown using a selective-area-growth (SAG) technique, and is made up of at least two quantum wells, with at least one of the quantum wells having a size and composition that vary as a function of position along the waveguide direction.
摘要翻译：提供一种光学增益介质及其形成方法，当配置为比现有技术的光学增益介质作为光学放大器时，其表现出较低的波长串扰。本发明的光学增益介质包括在多量子阱（MQW）区域中制造的掩埋异质结构波导。掩埋异质结构波导位于其中的MQW区域表现出沿着波导方向作为位置的函数的连续变化的带隙，优选地使得由光学增益介质提供的增益作为沿着波导方向的位置的函数而呈指数变化。在优选实施例中，使用选择区域增长（SAG）技术生长掩埋异质结构波导埋入的MQW区域，并且由至少两个量子阱组成，其中至少一个量子阱具有沿着波导方向作为位置的函数变化的尺寸和组成。

5. 发明申请

US20030151804A1 Extended bandwidth semiconductor optical amplifier 失效
标题翻译：扩展带宽半导体光放大器
公开(公告)号：US20030151804A1
公开(公告)日：2003-08-14
申请号：US10348641
申请日：2003-01-21
发明人： Jan Lipson , Chris Dries
IPC分类号： H01S003/00
CPC分类号： B82Y20/00 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/50 , H01S2301/04
摘要： A Semiconductor Optical Amplifier (SOA) with extended bandwidth and the method of fabricating the same are disclosed. In one embodiment, the SOA includes a Multiple Quantum Well (MQW) stacks whose thickness varies along the length of the device. The SOA has a flatter and broader gain spectrum than SOAs with substantially flat MQW stacks.
摘要翻译：公开了具有扩展带宽的半导体光放大器（SOA）及其制造方法。在一个实施例中，SOA包括其厚度沿设备长度变化的多量子阱（MQW）堆栈。与具有基本平坦的MQW堆栈的SOA相比，SOA具有更平坦和更广泛的增益谱。

6. 发明申请

US20020126723A1 Semiconductor laser device and manufacturing method thereof 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20020126723A1
公开(公告)日：2002-09-12
申请号：US09984000
申请日：2001-10-26
发明人： Nobuhiro Ohkubo
IPC分类号： H01S005/00
CPC分类号： B82Y20/00 , G11B7/127 , H01S5/1057 , H01S5/164 , H01S5/3054 , H01S5/3414
摘要： A semiconductor laser device has a quantum well active layer including a well layer and a barrier layer laminated on a semiconductor substrate. The quantum well active layer contains II group atoms such as Zn atoms. The quantum well active layer is so formed that a bandgap of the quantum well active layer in the vicinity of an end surface of a laser resonator is larger than a bandgap of the quantum well active layer inside the laser resonator. The II group atoms contained in the quantum well active layer inside the laser resonator make up for vacancies introduced therein so as to inhibit fluctuation of the bandgap of the quantum well active layer inside the laser resonator and thereby to enhance long-term reliability of the semiconductor laser device.
摘要翻译：半导体激光器件具有包括层叠在半导体衬底上的阱层和势垒层的量子阱活性层。量子阱活性层含有II族原子如Zn原子。量子阱有源层被形成为使得激光谐振器的端面附近的量子阱有源层的带隙大于激光谐振器内的量子阱有源层的带隙。包含在激光谐振器内部的量子阱有源层中的II族原子构成了引入其中的空位，以便抑制激光谐振器内的量子阱有源层的带隙波动，从而提高半导体的长期可靠性激光装置。

7. 发明授权

US6026107A Semiconductor optical functional device and method of driving the same 失效
标题翻译：半导体光功能器件及其驱动方法
公开(公告)号：US6026107A
公开(公告)日：2000-02-15
申请号：US965614
申请日：1997-11-06
申请人： Yidong Huang
发明人： Yidong Huang
IPC分类号： G02B6/126 , G02B6/14 , G02F1/025 , H01S3/10 , H01S5/00 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/34 , H01S5/50 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/0609 , H01S5/5009 , H01S2301/14 , H01S5/06236 , H01S5/0625 , H01S5/1057 , H01S5/3404
摘要： A semiconductor optical functional device is divided into two regions of a first region 1 and a second region 2 adjacent to each other in a longitudinal direction of a semiconductor optical waveguide. The first region 1 is provided with a region including an MQW structure in which a compressive strain is introduced, and the second region 2 is provided with a region including an MQW structure in which a tensile strain is introduced. Electrodes 3 and 4 formed separately and independently from each other are respectively disposed on the first region 1 and the second region 2, and bias voltages applied to the electrodes 3 and 4 are adjusted so that transmissivities for light having a TE mode component and light having a TM mode component are independently controlled.
摘要翻译：半导体光功能元件沿半导体光波导的长度方向被分割成彼此相邻的第一区域1和第二区域2的两个区域。第一区域1设置有包括其中引入压缩应变的MQW结构的区域，并且第二区域2设置有包括引入拉伸应变的MQW结构的区域。分别设置在第一区域1和第二区域2上并分别独立地形成的电极3和4，并且调整施加到电极3和4的偏置电压，使得具有TE模式分量的光的透射率和具有 TM模式组件被独立控制。

8. 发明授权

US5563900A Broad spectrum surface-emitting led 失效
标题翻译：广谱表面发射LED
公开(公告)号：US5563900A
公开(公告)日：1996-10-08
申请号：US287820
申请日：1994-08-09
申请人： Donald E. Ackley , Paige M. Holm , Michael S. Lebby
发明人： Donald E. Ackley , Paige M. Holm , Michael S. Lebby
IPC分类号： H01S5/183 , H01S5/40 , H01S3/18 , H01S3/103
CPC分类号： H01S5/18397 , H01S5/1057 , H01S5/18308 , H01S5/18358 , H01S5/18361 , H01S5/2063
摘要： A surface emitting light emitting device with a semiconducting substrate, a semiconducting mirror stack positioned on the substrate surface, a spacer layer positioned on the mirror stack, an active region positioned on the spacer layer, a second spacer layer positioned on the active region, a second semiconducting mirror stack positioned on the second spacer layer, and a top contact layer positioned in contact with the second semiconducting mirror stack. The active region includes multiple quantum wells each having a different transition wavelength and positioned on the spacer layer with the quantum well possessing the longest transition wavelength located closest to the spacer layer and additional quantum wells of the multiple quantum wells positioned in order of decreasing transition wavelength so that the sum of the emission from all of the quantum wells results in a broad and uniform output emission spectrum.
摘要翻译：具有半导体衬底的表面发射发光器件，位于衬底表面上的半导体反射镜叠层，位于反射镜叠层上的间隔层，位于间隔层上的有源区，位于有源区上的第二间隔层，位于第二间隔层上的第二半导体反射镜叠层和与第二半导体反射镜叠层定位接触的顶部接触层。有源区包括多个量子阱，每个量子阱具有不同的跃迁波长并且位于间隔层上，其中量子阱具有位于最靠近间隔层的最长过渡波长，并且多个量子阱的额外量子阱按照降低的跃迁波长使得来自所有量子阱的发射的总和导致宽而均匀的输出发射光谱。

9. 发明授权

US4794346A Broadband semiconductor optical amplifier structure 失效
标题翻译：宽带半导体光放大器结构
公开(公告)号：US4794346A
公开(公告)日：1988-12-27
申请号：US148756
申请日：1988-01-26
申请人： Stewart E. Miller
发明人： Stewart E. Miller
IPC分类号： H01S3/105 , H01S5/02 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/227 , H01S5/50 , H01S3/19
CPC分类号： H01S5/5045 , H01S5/02 , H01S5/026 , H01S5/10 , H01S5/1021 , H01S5/0265 , H01S5/06256 , H01S5/1057 , H01S5/125 , H01S5/2275 , H01S5/5027
摘要： The broadband semiconductor optical amplifier fabricated in accordance with the teachings of the present invention comprises first and second active semiconductor regions (50, 51) disposed in tandem with each other, and means for injecting current (I.sub.1,I.sub.2) into the first and second active semiconductor regions to provide gain distributions over wavelength regions in the two active semiconductor regions which partially overlap to form a combined gain distribution over a wider range of wavelengths. Anti-reflection coatings (54, 55) are disposed on the extreme ends of the combined structure. Tuneable wavelength selective amplification over the wider range is achieved in various embodiments by including a tunable optical bandpass filter (53) or by including various tunable auxiliary light guiding structures (115, 116; 140; or 450) to which and from which light power is coupled from and to the active semiconductor regions of the amplifier, respectively.
摘要翻译：根据本发明的教导制造的宽带半导体光放大器包括彼此串联布置的第一和第二有源半导体区域（50,51），以及用于将电流（I1，I2）注入到第一和第二有源半导体区域半导体区域以在两个有源半导体区域中的波长区域上提供增益分布，其部分重叠以在更宽的波长范围上形成组合的增益分布。防反射涂层（54,55）设置在组合结构的末端。通过包括可调谐光学带通滤波器（53）或通过包括各种可调谐的辅助光导结构（115,116,140或450）来实现在更宽范围内的可调谐波长选择性放大，其中光功率为分别耦合到放大器的有源半导体区域。

10. 发明授权

US4680769A Broadband laser amplifier structure 失效
标题翻译：宽带激光放大器结构
公开(公告)号：US4680769A
公开(公告)日：1987-07-14
申请号：US673584
申请日：1984-11-21
申请人： Stewart E. Miller
发明人： Stewart E. Miller
IPC分类号： H01S3/105 , H01S5/02 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/125 , H01S5/227 , H01S5/50 , H01S3/098 , H01S3/10
CPC分类号： H01S5/5045 , H01S5/02 , H01S5/0265 , H01S5/10 , H01S5/06256 , H01S5/1057 , H01S5/125 , H01S5/2275 , H01S5/426 , H01S5/5027
摘要： An injection laser fabricated in accordance with the teachings of the present invention comprises a laser cavity having first and second active laser regions disposed in tandem therein, means for injecting current into the first and second active laser regions to provide gain distributions over wavelength regions in the two active laser regions which partially overlap to form a combined gain distribution over a range of wavelengths and means for providing wavelength within the range. In various embodiments of the present invention, the means for providing wavelength selective reflector or means for coupling energy out of the active regions. Moreover, the wavelength of the output radiation in various embodiments is determined by the values of the injected current density in the two active laser regions and the relative magnitudes of the loss at specific wavelengths.
摘要翻译：根据本发明的教导制造的注入激光器包括具有串联布置的第一和第二有源激光器区域的激光器腔室，用于将电流注入到第一和第二有源激光器区域中以在波长区域中提供增益分布的装置两个有源激光区域部分重叠以在波长范围内形成组合的增益分布，以及用于在该范围内提供波长的装置。在本发明的各种实施例中，用于提供波长选择反射器的装置或用于将能量耦合到有源区域之外的装置。此外，各种实施例中的输出辐射的波长由两个有源激光区域中注入的电流密度的值和在特定波长处的损耗的相对幅度来确定。

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