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1. 发明申请

US20100032703A1 EDGE-EMITTING LED ASSEMBLY 审中-公开
标题翻译：边缘发光LED组件
公开(公告)号：US20100032703A1
公开(公告)日：2010-02-11
申请号：US12579494
申请日：2009-10-15
申请人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
发明人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
IPC分类号： H01L33/00
CPC分类号： H01L33/46
摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.
摘要翻译：根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件比外部发光面。反射元件接收在LED堆叠内产生的光并将接收的光反射回LED堆叠。反射光的至少一部分然后从外部发射表面发射。

2. 发明申请

US20090179229A1 OHMIC CONTACT ON p-TYPE GaN 失效
标题翻译： OHMIC接触p型GaN
公开(公告)号：US20090179229A1
公开(公告)日：2009-07-16
申请号：US12356310
申请日：2009-01-20
申请人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01L29/22
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

3. 发明授权

US07635874B2 Edge-emitting LED assembly 有权
标题翻译：边缘发光LED组件
公开(公告)号：US07635874B2
公开(公告)日：2009-12-22
申请号：US11235592
申请日：2005-09-26
申请人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
发明人： Jeffrey N. Miller , Steven D. Lester , Virginia M. Robbins
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/46
摘要： A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.
摘要翻译：根据本发明的发光二极管（LED）包括具有发射光的外部发射表面的边缘发射LED堆叠以及与LED堆叠的至少一个外表面相邻的反射元件比外部发光面。反射元件接收在LED堆叠内产生的光，并将接收的光反射回LED堆叠。反射光的至少一部分然后从外部发射表面发射。

4. 发明授权

US07495314B2 Ohmic contact on p-type GaN 失效
标题翻译： p型GaN上的欧姆接触
公开(公告)号：US07495314B2
公开(公告)日：2009-02-24
申请号：US11234993
申请日：2005-09-26
申请人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01L29/22
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

5. 发明授权

US07473941B2 Structures for reducing operating voltage in a semiconductor device 失效
标题翻译：用于降低半导体器件中的工作电压的结构
公开(公告)号：US07473941B2
公开(公告)日：2009-01-06
申请号：US11203917
申请日：2005-08-15
申请人： Virginia M. Robbins , Steven D. Lester , Jeffrey N. Miller , David P. Bour
发明人： Virginia M. Robbins , Steven D. Lester , Jeffrey N. Miller , David P. Bour
IPC分类号： H01L33/00
CPC分类号： H01S5/305
摘要： A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.
摘要翻译：发光装置包括响应于注入的电荷而被配置为产生光的有源区，以及n型材料层和p型材料层，其中n型材料层和p型材料层中的至少一种材料层掺杂有至少两种掺杂剂，所述掺杂剂中的至少一种具有高于另一种掺杂剂的电离能级的电离能。

6. 发明授权

US06953702B2 Fixed wavelength vertical cavity optical devices and method of manufacture therefor 失效
标题翻译：固定波长垂直腔光学器件及其制造方法
公开(公告)号：US06953702B2
公开(公告)日：2005-10-11
申请号：US10151631
申请日：2002-05-16
申请人： Jeffrey N. Miller , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01S5/183 , H01S5/00 , H01S5/02 , H01S5/40 , H01S5/42 , H01L21/20
CPC分类号： H01S5/18358 , H01S5/0014 , H01S5/0205 , H01S5/18341 , H01S5/18366 , H01S5/4087 , H01S5/423
摘要： Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.
摘要翻译：提供了垂直腔光学器件及其制造方法，其中该方法包括在晶片上部分地形成第一垂直腔光学器件，调整第一垂直腔光学器件的激光波长，以及固定第一垂直腔光学器件的激光波长垂直腔光学器件完成其形成。

7. 发明授权

US06806110B2 Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture therefor 失效
标题翻译：单片多波长垂直腔表面发射激光阵列及其制造方法
公开(公告)号：US06806110B2
公开(公告)日：2004-10-19
申请号：US10151646
申请日：2002-05-16
申请人： Steven D. Lester , Virginia M. Robbins , Jeffrey N. Miller
发明人： Steven D. Lester , Virginia M. Robbins , Jeffrey N. Miller
IPC分类号： H01L2100
CPC分类号： H01S5/423 , H01S5/18341 , H01S5/18358 , H01S5/18366 , H01S5/18369 , H01S5/4087
摘要： A monolithic array of vertical cavity lasers with different emission wavelengths on a single wafer, and method of manufacture therefor, is provided. A first reflector is over the semiconductor substrate with a photoactive semiconductor layer. A reflector support defines first and second air gaps with the photoactive semiconductor layer. The second and third air gaps are made to be different from each other by geometric differences in the reflector support structure. Second and third reflectors are formed over the reflector support whereby a first laser is formed by the first reflector, the photoactive semiconductor structure, the first air gap, and the second reflector and whereby a second laser is formed by the first reflector, the photoactive semiconductor structure, the second air gap, and the third reflector. The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps.
摘要翻译：提供了在单个晶片上具有不同发射波长的垂直腔激光器的单片阵列及其制造方法。第一反射器在具有光敏半导体层的半导体衬底上。反射器支撑件用光敏半导体层限定第一和第二气隙。通过反射器支撑结构中的几何差异使第二和第三气隙彼此不同。第二和第三反射器形成在反射器支撑件上，由此由第一反射器，光活性半导体结构，第一气隙和第二反射器形成第一激光器，由此由第一反射器形成第二激光器，光活性半导体结构，第二气隙和第三反射器。由于第一和第二气隙的尺寸不同，第一和第二激光器的发射波长是不同的。

8. 发明授权

US07273798B2 Gallium nitride device substrate containing a lattice parameter altering element 有权
公开(公告)号：US07273798B2
公开(公告)日：2007-09-25
申请号：US11194237
申请日：2005-08-01
申请人： Steven D. Lester , Virginia M. Robbins , Scott W. Corzine
发明人： Steven D. Lester , Virginia M. Robbins , Scott W. Corzine
IPC分类号： H01L21/301 , H01L21/461
CPC分类号： H01L21/2007 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079
摘要： A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.

9. 发明授权

US08039869B2 Gallium nitride device substrate containing a lattice parameter altering element 有权
标题翻译：含有晶格参数改变元件的氮化镓器件衬底
公开(公告)号：US08039869B2
公开(公告)日：2011-10-18
申请号：US11838467
申请日：2007-08-14
申请人： Steven D. Lester , Virginia M. Robbins , Scott W. Corzine
发明人： Steven D. Lester , Virginia M. Robbins , Scott W. Corzine
IPC分类号： H01L33/04 , H01L29/15
CPC分类号： H01L21/2007 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079
摘要： A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.
摘要翻译：氮化镓器件衬底包括含有位于替代衬底上的附加晶格参数改变元件的氮化镓层。

10. 发明授权

US5376229A Method of fabrication of adjacent coplanar semiconductor devices 失效
标题翻译：相邻共面半导体器件的制造方法
公开(公告)号：US5376229A
公开(公告)日：1994-12-27
申请号：US131835
申请日：1993-10-05
申请人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
发明人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
IPC分类号： H01L21/033 , H01L21/20 , H01L21/306 , B44C1/22
CPC分类号： H01L21/0331 , H01L21/02395 , H01L21/02546
摘要： A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.
摘要翻译：一种用于处理提供的不同类型的共面半导体器件的方法。该方法包括以下步骤：形成用于在衬底上形成第一器件区域的第一层，在第一器件区域上形成外延半导体剥离层，去除第一器件区域的一部分以打开形成区域的第二器件区域，外延地沉积第二器件区域，以及去除剥离层以使剩余在衬底上的第一和第二器件区域。

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