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    • 1. 发明申请
    • APPARATUS AND METHOD TO ENABLE PRECISION AND FAST LASER FREQUENCY TUNING
    • 使用精度和快速激光频率调谐的装置和方法
    • US20130308663A1
    • 2013-11-21
    • US13474053
    • 2012-05-17
    • JEFFREY R. CHENKenji NumataStewart T. WuGuangning Yang
    • JEFFREY R. CHENKenji NumataStewart T. WuGuangning Yang
    • H01S3/10
    • H01S5/06256G01S7/484H01S3/1304H01S3/1305H01S5/0687
    • An apparatus and method is provided to enable precision and fast laser frequency tuning. For instance, a fast tunable slave laser may be dynamically offset-locked to a reference laser line using an optical phase-locked loop. The slave laser is heterodyned against a reference laser line to generate a beatnote that is subsequently frequency divided. The phase difference between the divided beatnote and a reference signal may be detected to generate an error signal proportional to the phase difference. The error signal is converted into appropriate feedback signals to phase lock the divided beatnote to the reference signal. The slave laser frequency target may be rapidly changed based on a combination of a dynamically changing frequency of the reference signal, the frequency dividing factor, and an effective polarity of the error signal. Feed-forward signals may be generated to accelerate the slave laser frequency switching through laser tuning ports.
    • 提供了一种能够实现精确和快速的激光频率调谐的装置和方法。 例如,使用光锁相环可以将快速可调的从属激光器动态地偏置锁定到参考激光线。 从属激光器与参考激光线进行外差,以产生随后频率分频的节拍。 可以检测分割的拍子和参考信号之间的相位差,以产生与相位差成比例的误差信号。 误差信号被转换成适当的反馈信号,以将分频的beatnote锁定到参考信号。 可以基于参考信号的动态变化的频率,分频因子和误差信号的有效极性的组合来快速地改变从属激光频率目标。 可以产生前馈信号,以通过激光调谐端口加速从属激光器频率切换。
    • 2. 发明授权
    • Apparatus and method to enable precision and fast laser frequency tuning
    • 激光频率调谐精度高的装置和方法
    • US09065242B2
    • 2015-06-23
    • US13474053
    • 2012-05-17
    • Jeffrey R. ChenKenji NumataStewart T. WuGuangning Yang
    • Jeffrey R. ChenKenji NumataStewart T. WuGuangning Yang
    • H01S3/10H01S5/0625G01S7/484H01S3/13H01S5/0687
    • H01S5/06256G01S7/484H01S3/1304H01S3/1305H01S5/0687
    • An apparatus and method is provided to enable precision and fast laser frequency tuning. For instance, a fast tunable slave laser may be dynamically offset-locked to a reference laser line using an optical phase-locked loop. The slave laser is heterodyned against a reference laser line to generate a beatnote that is subsequently frequency divided. The phase difference between the divided beatnote and a reference signal may be detected to generate an error signal proportional to the phase difference. The error signal is converted into appropriate feedback signals to phase lock the divided beatnote to the reference signal. The slave laser frequency target may be rapidly changed based on a combination of a dynamically changing frequency of the reference signal, the frequency dividing factor, and an effective polarity of the error signal. Feed-forward signals may be generated to accelerate the slave laser frequency switching through laser tuning ports.
    • 提供了一种能够实现精确和快速的激光频率调谐的装置和方法。 例如,使用光锁相环可以将快速可调的从属激光器动态地偏置锁定到参考激光线。 从属激光器与参考激光线进行外差,以产生随后频率分频的节拍。 可以检测分割的拍子和参考信号之间的相位差,以产生与相位差成比例的误差信号。 误差信号被转换成适当的反馈信号,以将分频的beatnote锁定到参考信号。 可以基于参考信号的动态变化的频率,分频因子和误差信号的有效极性的组合来快速地改变从属激光频率目标。 可以产生前馈信号,以通过激光调谐端口加速从属激光器频率切换。
    • 4. 发明授权
    • Semiconductor memory and screening test method thereof
    • 半导体存储器及其筛选试验方法
    • US5532963A
    • 1996-07-02
    • US523741
    • 1995-09-05
    • Natsuki KushiyamaTohru FuruyamaKenji Numata
    • Natsuki KushiyamaTohru FuruyamaKenji Numata
    • G11C29/02G11C29/24G11C29/50G11C7/00
    • G11C29/025G11C29/02G11C29/028G11C29/24G11C29/50G11C11/401G11C2029/5004G11C2029/5006
    • A semiconductor memory comprises a dynamic type memory cell array arranged to form a matrix and provided with word lines commonly connected to memory cells of respective columns and bit lines commonly connected to memory cells of respective rows, a dummy cell section having a first set of dummy word lines connected to respective complimentary bit line pairs of said memory cell array by way of respective first capacitances and a second set of dummy word lines connected to respective complementary bit line pairs of said memory cell array by way of respective second capacitances, a dummy word line potential control circuit capable of optionally controlling the mode of driving selected dummy word lines when said word lines of said memory cell array are activated and sense amplifiers connected to the respective complementary bit line pairs of said memory cell array for reading data from selected memory cells of the memory cell array onto the related bit line.
    • 半导体存储器包括动态型存储单元阵列,其布置成形成矩阵并且设置有通常连接到相应列的存储器单元的字线和共同连接到各行的存储单元的位线的虚拟单元部分,虚拟单元部分具有第一组虚拟 通过相应的第一电容连接到所述存储单元阵列的相应互补位线对的字线和通过相应的第二电容连接到所述存储单元阵列的相应互补位线对的第二组虚拟字线, 线电势控制电路,当所述存储单元阵列的所述字线被激活时,能够可选地控制驱动所选择的虚拟字线的模式,以及连接到所述存储单元阵列的相应互补位线对的读出放大器,用于从所选存储单元读取数据 的存储单元阵列到相关位线上。
    • 5. 发明授权
    • Image processing apparatus
    • 图像处理装置
    • US09041825B2
    • 2015-05-26
    • US13609844
    • 2012-09-11
    • Kenji Numata
    • Kenji Numata
    • H04N5/225H04N1/21H04N5/232
    • H04N5/23232H04N5/23209H04N2005/2255
    • An image processing apparatus of the present invention includes: a video input section to which live video obtained by picking up an image of an object is inputted; a frame interpolation processing section which, by inserting an interpolated image between images of frames constituting the live video, performs processing for generating and outputting interpolated video of a frame rate set in advance; and a control section which, when an instruction for freezing video displayed on a display section is made, operates so as to cause a still image of a frame constituting the live video to be displayed on the display section.
    • 本发明的图像处理装置包括:输入通过拍摄对象的图像而获得的实况视频的视频输入部; 帧内插处理部,通过在构成实时视频的帧的图像之间插入内插图像,执行用于生成并输出预先设定的帧速率的内插视频的处理; 以及控制部分,当进行用于冻结显示在显示部分上的视频的指令时,操作以使得构成实时视频的帧的静止图像显示在显示部分上。
    • 6. 发明授权
    • Semiconductor memory device having cell array divided into a plurality
of cell blocks
    • 具有被划分为多个单元块的单元阵列的半导体存储器件
    • US5862090A
    • 1999-01-19
    • US959466
    • 1997-10-28
    • Kenji NumataSyuso Fujii
    • Kenji NumataSyuso Fujii
    • G11C11/401G11C7/06G11C7/10G11C7/12G11C8/12G11C11/409G11C11/4091G11C11/4094G11C11/4096G11C11/41H01L21/8242H01L27/108G11C7/00
    • G11C7/12G11C11/4091G11C11/4094G11C11/4096G11C7/065G11C7/1048G11C8/12
    • A semiconductor memory device includes a cell array having a plurality of memory cells grouped into a plurality of cell blocks and arranged in a matrix form, a plurality of word lines, a plurality of bit lines, bit line sense amplifiers (S/A), a cell block selection circuit, a plurality of data I/O lines, row decoders, a plurality of column selection signal lines, column decoders and a data buffer circuit. The data buffer circuit includes a first precharge circuit, connected to the data I/O lines, for precharging the data I/O lines to the same potential as a precharge potential of the bit lines, a second precharge circuit, connected to the data I/O lines, for precharging the data I/O lines to a potential different from the precharge potential of the bit lines, and selective drive circuit for generating control signals to be supplied to the first and second precharge circuit, and selectively driving the first and second precharge circuits to sense the data read out to the data I/O lines on the basis of the control signals.
    • 半导体存储器件包括具有分组为多个单元块并以矩阵形式布置的多个存储单元的单元阵列,多个字线,多个位线,位线读出放大器(S / A), 单元块选择电路,多个数据I / O线,行解码器,多个列选择信号线,列解码器和数据缓冲电路。 数据缓冲电路包括连接到数据I / O线的第一预充电电路,用于将数据I / O线预充电到与位线的预充电电位相同的电位;第二预充电电路,连接到数据I / O线,用于将数据I / O线预充电到与位线的预充电电位不同的电位,以及用于产生要提供给第一和第二预充电电路的控制信号的选择驱动电路,以及选择性地驱动第一和 第二预充电电路,用于基于控制信号感测读出到数据I / O线的数据。
    • 8. 发明授权
    • Input protection circuit formed in a semiconductor substrate
    • 形成在半导体衬底中的输入保护电路
    • US5594265A
    • 1997-01-14
    • US799342
    • 1991-11-27
    • Mitsuru ShimizuSyuso FujiiKenji NumataMasaharu Wada
    • Mitsuru ShimizuSyuso FujiiKenji NumataMasaharu Wada
    • H01L27/02H01L23/62
    • H01L27/0251
    • According to the invention, a well region is formed on a semiconductor substrate. An n.sup.+ -type first semiconductor region is formed in the well region, and an input pad for receiving an external signal is connected near the first semiconductor region. This input pad is connected to an input circuit of an integrated circuit constituted by an inverter circuit and to an external terminal for receiving an external signal. N.sup.+ -type second semiconductor regions are formed in the well region located on both sides of the first semiconductor region. A ground potential Vss is applied to these second semiconductor regions. A p.sup.+ -type third semiconductor region is formed around these second semiconductor regions in the well region. The ground potential is applied to the third semiconductor region. Therefore, a parallel circuit formed by a parasitic transistor and a parasitic diode is formed between the input pad and the ground potential. The parasitic transistor is turned on upon electrostatic discharge, and the parasitic diode is turned on when a negative potential for test is applied to the input pad, thereby preventing an erroneous operation of a transistor arranged on the semiconductor substrate.
    • 根据本发明,在半导体衬底上形成阱区。 在阱区中形成n +型第一半导体区,并且用于接收外部信号的输入焊盘连接在第一半导体区附近。 该输入焊盘连接到由逆变器电路构成的集成电路的输入电路和用于接收外部信号的外部端子。 在位于第一半导体区域的两侧的阱区中形成N +型第二半导体区域。 对这些第二半导体区域施加接地电位Vss。 在阱区中围绕这些第二半导体区域形成p +型第三半导体区域。 接地电位施加到第三半导体区域。 因此,在输入焊盘和接地电位之间形成由寄生晶体管和寄生二极管形成的并联电路。 寄生晶体管在静电放电时导通,当向输入焊盘施加用于测试的负电位时,寄生二极管导通,从而防止布置在半导体衬底上的晶体管的错误操作。
    • 9. 发明授权
    • System and method for tuning adjusting the central frequency of a laser while maintaining frequency stabilization to an external reference
    • 用于调整激光器的中心频率的系统和方法,同时保持对外部参考的频率稳定
    • US07970025B2
    • 2011-06-28
    • US12496954
    • 2009-07-02
    • Jeffrey LivasJames I. ThorpeKenji Numata
    • Jeffrey LivasJames I. ThorpeKenji Numata
    • H01S3/10
    • H01S3/1398
    • A method and system for stabilizing a laser to a frequency reference with an adjustable offset. The method locks a sideband signal generated by passing an incoming laser beam through the phase modulator to a frequency reference, and adjusts a carrier frequency relative to the locked sideband signal by changing a phase modulation frequency input to the phase modulator. The sideband signal can be a single sideband (SSB), dual sideband (DSB), or an electronic sideband (ESB) signal. Two separate electro-optic modulators can produce the DSB signal. The two electro-optic modulators can be a broadband modulator and a resonant modulator. With a DSB signal, the method can introduce two sinusoidal phase modulations at the phase modulator. With ESB signals, the method can further drive the optical phase modulator with an electrical signal with nominal frequency Ω1 that is phase modulated at a frequency Ω2.
    • 一种用于将激光器稳定到具有可调偏移的频率参考的方法和系统。 该方法锁定通过将入射激光束通过相位调制器而产生的边带信号为频率参考,并且通过改变输入到相位调制器的相位调制频率来调整相对于锁定边带信号的载波频率。 边带信号可以是单边带(SSB),双边带(DSB)或电子边带(ESB)信号。 两个单独的电光调制器可以产生DSB信号。 两个电光调制器可以是宽带调制器和谐振调制器。 利用DSB信号,该方法可以在相位调制器上引入两个正弦相位调制。 使用ESB信号,该方法可以用具有标称频率的电信号进一步驱动光相位调制器,并且以频率ωgr相位调制OHgr; 2。