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1. 发明授权

US08675431B2 Semiconductor memory device and defective cell relieving method 有权
标题翻译：半导体存储器件和有缺陷的电池释放方法
公开(公告)号：US08675431B2
公开(公告)日：2014-03-18
申请号：US13425364
申请日：2012-03-20
申请人： Takayuki Iwai , Makoto Takahashi , Masaharu Wada , Mariko Iizuka , Kimimasa Imai
发明人： Takayuki Iwai , Makoto Takahashi , Masaharu Wada , Mariko Iizuka , Kimimasa Imai
IPC分类号： G11C29/00
CPC分类号： G11C29/702 , G11C29/785 , G11C2029/0401 , G11C2029/4402
摘要： A memory cell array of a first semiconductor chip includes a normal cell array and a spare cell array. A first defect address data output circuit outputs first defect address data indicating an address of a defective memory cell in the memory cell array. A first comparison circuit compares address data with the first defect address data and outputs a first match signal in case of matching. A second defect address data output circuit outputs second defect address data indicating an address of a defective memory cell in the memory cell array. A second comparison circuit compares the address data with the second defect address data and outputs a second match signal in case of matching.
摘要翻译：第一半导体芯片的存储单元阵列包括正常单元阵列和备用单元阵列。第一缺陷地址数据输出电路输出指示存储单元阵列中缺陷存储单元地址的第一缺陷地址数据。第一比较电路将地址数据与第一缺陷地址数据进行比较，并在匹配的情况下输出第一匹配信号。第二缺陷地址数据输出电路输出指示存储单元阵列中缺陷存储单元的地址的第二缺陷地址数据。第二比较电路将地址数据与第二缺陷地址数据进行比较，并在匹配的情况下输出第二匹配信号。

2. 发明申请

US20120091803A1 CONSTANT VOLTAGE CONSTANT CURRENT GENERATION CIRCUIT 有权
标题翻译：恒定电压恒定电流发生电路
公开(公告)号：US20120091803A1
公开(公告)日：2012-04-19
申请号：US13022888
申请日：2011-02-08
申请人： Masaharu Wada
发明人： Masaharu Wada
IPC分类号： G05F1/56
CPC分类号： G05F3/242 , G05F3/30 , Y10T307/406
摘要： A constant voltage constant current generation circuit includes a first transistor, a first resistor connected between the first terminal and a second potential, a first diode connected in series with the first resistor, and a first operational amplifier which outputs a first control signal to a control terminal of the first transistor. The constant voltage constant current generation circuit includes a current output circuit which outputs a constant current from a current output terminal according to the first control signal, a second transistor through which a second current flows, the second current obtained by mirroring a first current flowing through the first transistor, a second resistor connected between the voltage output terminal and the second potential. The constant voltage constant current generation circuit includes a current source which outputs a current to the voltage output terminal, and which has negative current characteristics with respect to a temperature change, and a reference voltage output circuit which outputs the reference voltage from a reference voltage terminal.
摘要翻译：恒压恒流产生电路包括：第一晶体管，连接在第一端子和第二电位之间的第一电阻器，与第一电阻器串联连接的第一二极管;以及第一运算放大器，其将第一控制信号输出到控制器端子的第一晶体管。恒压恒定电流产生电路包括电流输出电路，该电流输出电路根据第一控制信号输出来自电流输出端的恒定电流，第二电流流过的第二晶体管，通过镜像流过第一电流而获得的第二电流第一晶体管，连接在电压输出端和第二电位之间的第二电阻。恒压恒定电流产生电路包括：电流源，其向电压输出端子输出电流，并且相对于温度变化具有负电流特性;以及参考电压输出电路，其从参考电压端子输出参考电压。

3. 发明申请

US20090261885A1 POWER-ON DETECTING CIRCUIT AND LEVEL CONVERTING CIRCUIT 有权
标题翻译：上电检测电路和电平转换电路
公开(公告)号：US20090261885A1
公开(公告)日：2009-10-22
申请号：US12388755
申请日：2009-02-19
申请人： Masaharu Wada
发明人： Masaharu Wada
IPC分类号： H03L5/00
CPC分类号： H03K3/356139 , G06F1/24 , H03K17/223
摘要： When a low supply potential has risen while a high supply potential has not risen, a logical value “0” is output as an output signal by applying a ground potential to an input terminal of a latch circuit through a capacitor. On the other hand, when the high supply potential has risen while the low supply potential has not risen, a logical value “0” is output as an output signal by converting the high supply potential into the ground potential by the level shifter. If both the low supply potential and the high supply potential have risen, the logical value “1” is output as an output signal by converting the ground potential into the high supply potential by the level shifter.
摘要翻译：当低电源电位升高而高电源电位尚未升高时，通过电容器将锁存电路的输入端施加接地电位作为输出信号输出逻辑值“0”。另一方面，当低供电电位未上升时，当高供电电位上升时，通过电平移位器将高电源电位转换为地电位，输出逻辑值“0”作为输出信号。如果低电源电位和高电源电位都升高，则通过电平移位器将地电位转换为高电源电位来输出逻辑值“1”作为输出信号。

4. 发明授权

US07005839B2 Reference power supply circuit for semiconductor device 失效
标题翻译：半导体器件参考电源电路
公开(公告)号：US07005839B2
公开(公告)日：2006-02-28
申请号：US10803934
申请日：2004-03-19
申请人： Masaharu Wada
发明人： Masaharu Wada
IPC分类号： G05F3/16
CPC分类号： G05F3/30
摘要： A first PN junction and first current supply are connected between a first potential and a second potential. A second PN junction, first resistive element and second current supply are connected between the first potential and the second potential, the size of the second PN junction being different from that of the first PN junction. A second resistive element is connected in parallel with the first resistive element and second PN junction. A differential amplifier is configured to receive, at an inverting input terminal, a potential between a first current supply and the first PN junction and, at a non-inverting input terminal, a potential on a connection point between a second current supply and the first resistor and to control the first, second and third current supplies by a potential difference between the inverting input and the non-inverting input.
摘要翻译：第一PN结和第一电流源连接在第一电势和第二电位之间。第二PN结，第一电阻元件和第二电流源连接在第一电位和第二电位之间，第二PN结的大小与第一PN结的尺寸不同。第二电阻元件与第一电阻元件和第二PN结并联连接。差分放大器被配置为在反相输入端处接收第一电流源和第一PN结之间的电势，并且在非反相输入端处接收第二电流源与第一PN结之间的连接点上的电位并且通过反相输入和非反相输入之间的电位差来控制第一，第二和第三电流源。

5. 发明授权

US5949109A Semiconductor device having input protection circuit 失效
标题翻译：具有输入保护电路的半导体器件
公开(公告)号：US5949109A
公开(公告)日：1999-09-07
申请号：US790804
申请日：1997-01-30
申请人： Mitsuru Shimizu , Syuso Fujii , Kenji Numata , Masaharu Wada
发明人： Mitsuru Shimizu , Syuso Fujii , Kenji Numata , Masaharu Wada
IPC分类号： H01L27/02 , H01L23/62
CPC分类号： H01L27/0251
摘要： According to this invention, a well region is formed on a semiconductor substrate. An n.sup.+ -type first semiconductor region is formed in the well region, and an input pad for receiving an external signal is connected near the first semiconductor region. This input pad is connected to an input circuit of an integrated circuit constituted by an inverter circuit and to an external terminal for receiving an external signal. N.sup.+ -type second semiconductor regions are formed in the well region located on both sides of the first semiconductor region. A ground potential Vss is applied to these second semiconductor regions. A p.sup.+ -type third semiconductor region is formed around these second semiconductor regions in the well region. The ground potential is applied to the third semiconductor region. Therefore, a parallel circuit formed by a parasitic transistor and a parasitic diode is formed between the input pad and the ground potential. The parasitic transistor is turned on upon electrostatic discharge, and the parasitic diode is turned on when a negative potential for test is applied to the input pad, thereby preventing an erroneous operation of a transistor arranged on the semiconductor substrate.
摘要翻译：根据本发明，在半导体衬底上形成阱区。在阱区中形成n +型第一半导体区，并且用于接收外部信号的输入焊盘连接在第一半导体区附近。该输入焊盘连接到由逆变器电路构成的集成电路的输入电路和用于接收外部信号的外部端子。在位于第一半导体区域的两侧的阱区中形成N +型第二半导体区域。对这些第二半导体区域施加接地电位Vss。在阱区中围绕这些第二半导体区域形成p +型第三半导体区域。接地电位施加到第三半导体区域。因此，在输入焊盘和接地电位之间形成由寄生晶体管和寄生二极管形成的并联电路。寄生晶体管在静电放电时导通，当向输入焊盘施加用于测试的负电位时，寄生二极管导通，从而防止布置在半导体衬底上的晶体管的错误操作。

6. 发明申请

US20130051167A1 SEMICONDUCTOR MEMORY DEVICE AND DEFECTIVE CELL RELIEVING METHOD 有权
标题翻译：半导体存储器件和缺陷细胞消除方法
公开(公告)号：US20130051167A1
公开(公告)日：2013-02-28
申请号：US13425364
申请日：2012-03-20
申请人： Takayuki Iwai , Makoto Takahashi , Masaharu Wada , Mariko Iizuka , Kimimasa Imai
发明人： Takayuki Iwai , Makoto Takahashi , Masaharu Wada , Mariko Iizuka , Kimimasa Imai
IPC分类号： G11C29/00 , G11C8/00 , G11C8/10 , G11C17/16
CPC分类号： G11C29/702 , G11C29/785 , G11C2029/0401 , G11C2029/4402
摘要： A memory cell array of a first semiconductor chip includes a normal cell array and a spare cell array. A first defect address data output circuit outputs first defect address data indicating an address of a defective memory cell in the memory cell array. A first comparison circuit compares address data with the first defect address data and outputs a first match signal in case of matching. A second defect address data output circuit outputs second defect address data indicating an address of a defective memory cell in the memory cell array. A second comparison circuit compares the address data with the second defect address data and outputs a second match signal in case of matching.
摘要翻译：第一半导体芯片的存储单元阵列包括正常单元阵列和备用单元阵列。第一缺陷地址数据输出电路输出指示存储单元阵列中缺陷存储单元地址的第一缺陷地址数据。第一比较电路将地址数据与第一缺陷地址数据进行比较，并在匹配的情况下输出第一匹配信号。第二缺陷地址数据输出电路输出指示存储单元阵列中缺陷存储单元的地址的第二缺陷地址数据。第二比较电路将地址数据与第二缺陷地址数据进行比较，并在匹配的情况下输出第二匹配信号。

7. 发明授权

US06608514B1 Clock signal generator circuit and semiconductor integrated circuit with the same circuit 失效
标题翻译：时钟信号发生器电路和半导体集成电路具有相同的电路
公开(公告)号：US06608514B1
公开(公告)日：2003-08-19
申请号：US09511352
申请日：2000-02-23
申请人： Hironobu Akita , Katsuaki Isobe , Masaharu Wada , Kenji Tsuchida , Haruki Toda
发明人： Hironobu Akita , Katsuaki Isobe , Masaharu Wada , Kenji Tsuchida , Haruki Toda
IPC分类号： H03K300
CPC分类号： G11C7/222 , G11C7/22 , H03K5/00006 , H03K5/135
摘要： A clock signal generator circuit comprises an off-chip driver, a first clock control circuit for outputting a first internal clock signal Tu synchronizing with an external clock signal CK, a second clock control circuit for outputting a second internal clock signal Td 180° out-of-phase with the external clock signal CK, a third clock control circuit for outputting a third internal clock signal aTx1 synchronizing with the first clock signal Tu and advanced in phase by at least the signal delay time in the off-chip driver, a fourth clock control circuit for outputting a fourth internal clock signal aTx2 synchronizing with the second clock signal Td and advanced in phase by at least the signal delay time in the off-chip driver, an OR circuit to which the third and fourth internal clock signals aTx1, aTx2 are inputted and which outputs a fifth internal clock signal aTx, and a fifth clock control circuit for outputting a sixth internal clock signal Tx which is in synchronization with the fifth internal clock signal aTx outputted from the OR circuit, has twice the frequency of the external clock signal CK, and is advanced in phase by the signal delay time in the off-chip driver.
摘要翻译：时钟信号发生器电路包括片外驱动器，用于输出与外部时钟信号CK同步的第一内部时钟信号Tu的第一时钟控制电路，用于将第二内部时钟信号Td 180°输出的第二时钟控制电路，与外部时钟信号CK的同相;第三时钟控制电路，用于输出与第一时钟信号Tu同步的第三内部时钟信号aTx1并至少在芯片外驱动器中的信号延迟时间相位前进;第四时钟控制电路，时钟控制电路，用于输出与第二时钟信号Td同步的第四内部时钟信号aTx2并至少在片外驱动器中的信号延迟时间相位前进;第三和第四内部时钟信号aTx1，输入aTx2并输出第五内部时钟信号aTx，以及第五时钟控制电路，用于输出与f同步的第六内部时钟信号Tx 从OR电路输出的第四内部时钟信号aTx具有外部时钟信号CK的两倍频率，并且在片外驱动器中相位提前信号延迟时间。

8. 发明授权

US06487133B2 Semiconductor device 有权
公开(公告)号：US06487133B2
公开(公告)日：2002-11-26
申请号：US09898033
申请日：2001-07-05
申请人： Masaharu Wada , Kenji Tsuchida , Atsushi Takeuchi
发明人： Masaharu Wada , Kenji Tsuchida , Atsushi Takeuchi
IPC分类号： G11C700
CPC分类号： G11C7/06
摘要： The present invention relates to overdrive circuits for generating an operational potential of a sense amplifier. For example, a switch circuit is used to connect a drive node of the sense amplifier with a overdrive potential generation circuit for generating an overdrive potential to be applied to bit lines. A restoration potential generation circuit comprises a push-pull regulator circuit for generating a restoration potential to be applied to bit lines. Consequently, the restoration potential generation circuit can directly connect with the sense amplifier's drive node.

9. 发明授权

US06483756B2 Sequence circuit and semiconductor device using sequence circuit 有权
公开(公告)号：US06483756B2
公开(公告)日：2002-11-19
申请号：US09984270
申请日：2001-10-29
申请人： Atsushi Takeuchi , Masaharu Wada
发明人： Atsushi Takeuchi , Masaharu Wada
IPC分类号： G11C1604
CPC分类号： G11C5/143 , G11C8/08
摘要： A semiconductor device includes a word line that is reset to a negative voltage when the word line is unselected. The semiconductor device further includes a sequence circuit that clamps the word line to a first fixed voltage, until a fixed power-supply voltage that is supplied to a memory cell connected to the word line reaches a second fixed voltage, at a time of starting power supply. Thus, the semiconductor device can prevent a negative power-supply voltage used for resetting the word line from rising, and can reduce consumed energy.

10. 发明授权

US06326834B1 Pump circuit boosting a supply voltage 失效
标题翻译：泵电路提升电源电压
公开(公告)号：US06326834B1
公开(公告)日：2001-12-04
申请号：US09602896
申请日：2000-06-23
申请人： Hironobu Akita , Masaharu Wada , Kenji Tsuchida , Hironori Banba
发明人： Hironobu Akita , Masaharu Wada , Kenji Tsuchida , Hironori Banba
IPC分类号： G05F110
CPC分类号： H02M3/073
摘要： First transistors for charging respective one side nodes of a plurality of capacitors are connected to these nodes of the capacitors, respectively. Second transistors for outputting electric charge of each capacitor are connected between respective one side nodes of the capacitors and an output terminal, respectively. A plurality of third transistors for transferring the electric charge of the other side nodes of the capacitors to the other nodes are connected to the respective other nodes. The electric charge of each capacitor is serially transferred from nodes of a high electric potential to nodes of a lower electric potential through one path by sequentially controlling the third transistors, or the electric charge of each capacitor is parallel transferred between arbitrary nodes of a high electric potential and low nodes through a plurality of paths. By these operations, electric charge of each capacitor is recycled.
摘要翻译：用于对多个电容器的各个侧面节点进行充电的第一晶体管分别连接到电容器的这些节点。用于输出每个电容器的电荷的第二晶体管分别连接在电容器的相应的一个侧面节点和输出端子之间。用于将电容器的另一侧节点的电荷转移到其他节点的多个第三晶体管连接到相应的其他节点。每个电容器的电荷通过顺序地控制第三晶体管，通过一个路径从高电位的节点被串行地传递到较低电位的节点，或者每个电容器的电荷在高电位的任意节点之间并行传送潜在和低节点通过多个路径。通过这些操作，每个电容器的电荷被再循环。

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