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    • 5. 发明授权
    • Semiconductor memory device and operating method thereof
    • 半导体存储器件及其操作方法
    • US08576600B2
    • 2013-11-05
    • US13420038
    • 2012-03-14
    • Jung Hwan LeeSeong Je ParkJi Hwan KimMyung ChoBeom Seok Hah
    • Jung Hwan LeeSeong Je ParkJi Hwan KimMyung ChoBeom Seok Hah
    • G11C15/00
    • G11C15/046G11C16/10
    • A semiconductor memory device includes a memory array configured to include memory cells for storing input data and Code Address Memory (CAM) cells for storing setting data used to set an operation condition; an operation circuit configured to perform a CAM read operation by supplying a read voltage to the CAM cells, perform a test operation for detecting unstable CAM cells in each of which a difference between a threshold voltage and the read voltage is smaller than a permitted limit, from among the CAM cells, and perform an erase operation or a program operation for the unstable CAM cells; and a controller configured to control the operation circuit so that the program operation for storing the setting data in the unstable CAM cells is performed if the number of unstable CAM cells detected in the test operation is greater than a permitted value.
    • 半导体存储器件包括:存储器阵列,被配置为包括用于存储输入数据的存储器单元和用于存储用于设置操作条件的设置数据的代码地址存储器(CAM)单元; 配置为通过向CAM单元提供读取电压来执行CAM读取操作的操作电路,执行用于检测阈值电压和读取电压之间的差小于允许极限的不稳定的CAM单元的测试操作, 从CAM单元中进行擦除操作或对不稳定的CAM单元的编程动作; 以及控制器,其被配置为如果在测试操作中检测到​​的不稳定的CAM单元的数量大于允许值,则执行用于将设置数据存储在不稳定的CAM单元中的程序操作。
    • 7. 发明授权
    • Method of programming nonvolatile memory device
    • 非易失性存储器件编程方法
    • US07881115B2
    • 2011-02-01
    • US12471546
    • 2009-05-26
    • Ji Hwan KimSeong Je Park
    • Ji Hwan KimSeong Je Park
    • G11C16/04
    • G11C11/5628G11C16/3436
    • According to a method of programming a nonvolatile memory device, a program operation is performed on a first page by applying a program pulse to the first page. A verification operation is performed on the program operation by applying a verification voltage to the first page. If the program operation for the first page has not been completed, a voltage selected from threshold voltages of the first page is set as a highest threshold voltage. The program operation for the first page is completed by repeatedly performing a program operation and a verification operation on the first page while a voltage level of the program pulse is increased. The sum of a program start voltage for the first page and a difference between the verification voltage and the highest threshold voltage is set as a program start voltage for a second page.
    • 根据非易失性存储器件的编程方法,通过向第一页应用编程脉冲,在第一页上执行编程操作。 通过对第一页应用验证电压来对编程操作执行验证操作。 如果第一页的编程操作尚未完成,则从第一页的阈值电压中选择的电压被设置为最高阈值电压。 通过在编程脉冲的电压电平增加的同时在第一页上重复执行编程操作和验证操作来完成第一页的编程操作。 将第一页的程序启动电压和验证电压与最高阈值电压之间的差的和设置为第二页的程序启动电压。