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1. 发明授权

US08598024B2 Fabricating method of metal silicide layer, fabricating method of semiconductor device using the same and semiconductor device fabricated using the method 有权
标题翻译：金属硅化物层的制造方法，使用其的半导体器件的制造方法以及使用该方法制造的半导体器件
公开(公告)号：US08598024B2
公开(公告)日：2013-12-03
申请号：US13239521
申请日：2011-09-22
申请人： Jin-Bum Kim , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
发明人： Jin-Bum Kim , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
IPC分类号： H01L21/425
CPC分类号： H01L29/7833 , H01L21/28506 , H01L21/28518 , H01L21/823814 , H01L29/456 , H01L29/6659
摘要： A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.
摘要翻译：制造金属硅化物层的方法包括在基板上形成金属层，并且通过在基板上进行第一退火处理使基板与金属层反应来形成预金属硅化物层。该方法还包括使用气体簇离子束（GCIB）工艺将硅注入到衬底中，并且通过在衬底上执行第二退火工艺将前金属硅化物层改变为金属硅化物层。

2. 发明申请

US20120083089A1 FABRICATING METHOD OF METAL SILICIDE LAYER, FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME AND SEMICONDUCTOR DEVICE FABRICATED USING THE METHOD 有权
标题翻译：金属硅化物层的制造方法，使用其的半导体器件的制造方法和使用该方法制造的半导体器件
公开(公告)号：US20120083089A1
公开(公告)日：2012-04-05
申请号：US13239521
申请日：2011-09-22
申请人： Jin-Bum KIM , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
发明人： Jin-Bum KIM , Chul-Sung Kim , Sang-Woo Lee , Yu-Gyun Shin
IPC分类号： H01L21/28 , H01L21/22
CPC分类号： H01L29/7833 , H01L21/28506 , H01L21/28518 , H01L21/823814 , H01L29/456 , H01L29/6659
摘要： A method of fabricating a metal silicide layer includes forming a metal layer on a substrate, and forming a pre-metal silicide layer by reacting the substrate with the metal layer by performing a first annealing process on the substrate. The method also includes implanting silicon into the substrate using a gas cluster ion beam (GCIB) process, and changing the pre-metal silicide layer into a metal silicide layer by performing a second annealing process on the substrate.
摘要翻译：制造金属硅化物层的方法包括在基板上形成金属层，并且通过在基板上进行第一退火处理使基板与金属层反应来形成预金属硅化物层。该方法还包括使用气体簇离子束（GCIB）工艺将硅注入到衬底中，并且通过在衬底上执行第二退火工艺将前金属硅化物层改变为金属硅化物层。

3. 发明申请

US20110306205A1 Semiconductor Device and Method of Fabricating the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110306205A1
公开(公告)日：2011-12-15
申请号：US13105195
申请日：2011-05-11
申请人： Byung-Hak Lee , Yu-Gyun Shin , Sang-Woo Lee , Sun-Ghil Lee , Jin-Bum Kim , Joon-Gon Lee
发明人： Byung-Hak Lee , Yu-Gyun Shin , Sang-Woo Lee , Sun-Ghil Lee , Jin-Bum Kim , Joon-Gon Lee
IPC分类号： H01L21/3205
CPC分类号： H01L21/28518 , H01L21/823807 , H01L21/823814
摘要： Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi2 layer between the NiSi layer and the source and drain regions.
摘要翻译：形成半导体器件的方法包括提供具有包括晶体管的源极和漏极区域的区域的衬底。在包括源极和漏极区域的衬底区域上形成镍（Ni）金属膜。执行第一热处理工艺，包括以第一斜率从第一温度至第二温度加热包括金属膜的基板，并将包含金属膜的基板在第二温度下保持第一时间段。然后执行第二热处理工艺，包括以第二斜率从第三温度至第四温度加热包括金属膜的衬底，并将衬底保持在第四温度第二时间段。第四温度与第二温度不同，第二时间段与第一时间段不同。依次执行的第一和第二热处理工艺将源极和漏极区域上的Ni金属层转换成源极和漏极区域上的NiSi层以及NiSi层与源极和漏极区域之间的NiSi 2层。

4. 发明授权

US08470703B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08470703B2
公开(公告)日：2013-06-25
申请号：US13105195
申请日：2011-05-11
申请人： Byung-Hak Lee , Yu-Gyun Shin , Sang-Woo Lee , Sun-Ghil Lee , Jin-Bum Kim , Joon-Gon Lee
发明人： Byung-Hak Lee , Yu-Gyun Shin , Sang-Woo Lee , Sun-Ghil Lee , Jin-Bum Kim , Joon-Gon Lee
IPC分类号： H01L21/3205
CPC分类号： H01L21/28518 , H01L21/823807 , H01L21/823814
摘要： Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi2 layer between the NiSi layer and the source and drain regions.
摘要翻译：形成半导体器件的方法包括提供具有包括晶体管的源极和漏极区域的区域的衬底。在包括源极和漏极区域的衬底区域上形成镍（Ni）金属膜。执行第一热处理工艺，包括以第一斜率从第一温度至第二温度加热包括金属膜的基板，并将包含金属膜的基板在第二温度下保持第一时间段。然后执行第二热处理工艺，包括以第二斜率从第三温度至第四温度加热包括金属膜的衬底，并将衬底保持在第四温度第二时间段。第四温度与第二温度不同，第二时间段与第一时间段不同。依次执行的第一和第二热处理工艺将源极和漏极区域上的Ni金属层转换成源极和漏极区域上的NiSi层以及NiSi层与源极和漏极区域之间的NiSi 2层。

5. 发明授权

US10043902B2 Semiconductor devices with shaped portions of elevated source/drain regions 有权
公开(公告)号：US10043902B2
公开(公告)日：2018-08-07
申请号：US14963731
申请日：2015-12-09
申请人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
发明人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
IPC分类号： H01L29/78 , H01L21/28 , H01L29/66 , H01L29/40 , H01L21/285 , H01L21/265 , H01L29/165 , H01L23/485 , H01L21/768 , H01L27/092 , H01L29/08 , H01L29/16 , H01L29/161
CPC分类号： H01L29/7839 , H01L21/26506 , H01L21/28 , H01L21/28518 , H01L21/28537 , H01L21/76814 , H01L23/485 , H01L27/092 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/401 , H01L29/665 , H01L29/66636 , H01L29/66643 , H01L29/78 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.

6. 发明申请

US20130316535A1 METHODS OF FORMING SEMICONDUCTOR DEVICES WITH METAL SILICIDE USING PRE-AMORPHIZATION IMPLANTS AND DEVICES SO FORMED 有权
标题翻译：使用预成型植入物和形成的器件形成具有金属硅化物的半导体器件的方法
公开(公告)号：US20130316535A1
公开(公告)日：2013-11-28
申请号：US13788599
申请日：2013-03-07
申请人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
发明人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
IPC分类号： H01L21/28
CPC分类号： H01L29/7839 , H01L21/26506 , H01L21/28 , H01L21/28518 , H01L21/28537 , H01L21/76814 , H01L23/485 , H01L27/092 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/401 , H01L29/665 , H01L29/66636 , H01L29/66643 , H01L29/78 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
摘要翻译：可以通过形成露出升高的源极/漏极区域的表面的开口来提供形成半导体器件的方法。可以减小开口的尺寸，并且可以通过开口将升高的源极/漏极区域（PAI）进行预非晶化植入（PAI），以形成升高的源极/漏极区域的非晶化部分。金属硅化物可以由金属和非晶化部分形成。

7. 发明申请

US20180331218A1 SEMICONDUCTOR DEVICES WITH SHAPED PORTIONS OF ELEVATED SOURCE/DRAIN REGIONS 审中-公开
公开(公告)号：US20180331218A1
公开(公告)日：2018-11-15
申请号：US16026614
申请日：2018-07-03
申请人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-lk Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
发明人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-lk Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
IPC分类号： H01L29/78 , H01L21/265 , H01L29/66 , H01L29/40 , H01L29/165 , H01L29/161 , H01L29/16 , H01L29/08 , H01L27/092 , H01L23/485 , H01L21/768 , H01L21/285 , H01L21/28
CPC分类号： H01L29/7839 , H01L21/26506 , H01L21/28 , H01L21/28518 , H01L21/28537 , H01L21/76814 , H01L23/485 , H01L27/092 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/401 , H01L29/665 , H01L29/66636 , H01L29/66643 , H01L29/78 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.

8. 发明申请

US20160233334A1 SEMICONDUCTOR DEVICES WITH SHAPED PORTIONS OF ELEVATED SOURCE/DRAIN REGIONS 审中-公开
标题翻译：具有高压源/排水区形状的半导体器件
公开(公告)号：US20160233334A1
公开(公告)日：2016-08-11
申请号：US14963731
申请日：2015-12-09
申请人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
发明人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
IPC分类号： H01L29/78 , H01L29/165 , H01L29/161 , H01L29/16 , H01L27/092 , H01L29/08
CPC分类号： H01L29/7839 , H01L21/26506 , H01L21/28 , H01L21/28518 , H01L21/28537 , H01L21/76814 , H01L23/485 , H01L27/092 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/401 , H01L29/665 , H01L29/66636 , H01L29/66643 , H01L29/78 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
摘要翻译：可以通过形成露出升高的源极/漏极区域的表面的开口来提供形成半导体器件的方法。可以减小开口的尺寸，并且可以通过开口将升高的源极/漏极区域（PAI）进行预非晶化植入（PAI），以形成升高的源极/漏极区域的非晶化部分。金属硅化物可以由金属和非晶化部分形成。

9. 发明授权

US09240323B2 Methods of forming semiconductor devices with metal silicide using pre-amorphization implants 有权
标题翻译：使用前非晶化植入物形成具有金属硅化物的半导体器件的方法
公开(公告)号：US09240323B2
公开(公告)日：2016-01-19
申请号：US13788599
申请日：2013-03-07
申请人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
发明人： Chung-Hwan Shin , Sang-Bom Kang , Dae-Yong Kim , Jeong-Ik Kim , Chul-Sung Kim , Je-Hyung Ryu , Sang-Woo Lee , Hyo-Seok Choi
IPC分类号： H01L21/28 , H01L21/265 , H01L29/66 , H01L29/78 , H01L29/165 , H01L21/285 , H01L23/485 , H01L21/768
CPC分类号： H01L29/7839 , H01L21/26506 , H01L21/28 , H01L21/28518 , H01L21/28537 , H01L21/76814 , H01L23/485 , H01L27/092 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/401 , H01L29/665 , H01L29/66636 , H01L29/66643 , H01L29/78 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device can be provided by forming an opening that exposes a surface of an elevated source/drain region. The size of the opening can be reduced and a pre-amorphization implant (PAI) can be performed into the elevated source/drain region, through the opening, to form an amorphized portion of the elevated source/drain region. A metal-silicide can be formed from a metal and the amorphized portion.
摘要翻译：可以通过形成露出升高的源极/漏极区域的表面的开口来提供形成半导体器件的方法。可以减小开口的尺寸，并且可以通过开口将升高的源极/漏极区域（PAI）进行预非晶化植入（PAI），以形成升高的源极/漏极区域的非晶化部分。金属硅化物可以由金属和非晶化部分形成。

10. 发明授权

US08145248B2 Apparatus and method for uplink beamforming and Space-Division Multiple Access (SDMA) in Multiple Input Multiple Output (MIMO) wireless communication systems 有权
标题翻译：用于多输入多输出（MIMO）无线通信系统中的上行波束成形和空分多址（SDMA）的装置和方法
公开(公告)号：US08145248B2
公开(公告)日：2012-03-27
申请号：US12407951
申请日：2009-03-20
申请人： Ki-Young Han , Sang-Woo Lee , June Moon , Byoung-Ha Yi , Cheol Mun
发明人： Ki-Young Han , Sang-Woo Lee , June Moon , Byoung-Ha Yi , Cheol Mun
IPC分类号： H04B7/00 , H04B1/38 , H04L27/00 , H04W4/00
CPC分类号： H04B7/0417 , H04B7/0404 , H04B7/0632 , H04B7/0634 , H04B7/0639 , H04L25/0204 , H04L25/0224
摘要： An apparatus and method for beamforming of a terminal in a Multiple Input Multiple Output (MIMO) wireless communication system are provided. The method includes transmitting sounding signals beamformed through a plurality of beamforming weight vectors in sequence, receiving control information indicative of an uplink weight vector determined by a base station and a maximum channel quality value using the sounding signals and transmitting a transmit signal beamformed with the uplink weight vector via a plurality of antennas.
摘要翻译：提供了一种用于在多输入多输出（MIMO）无线通信系统中的终端的波束成形的装置和方法。该方法包括：依次发送通过多个波束成形权重向量形成的波束信号，接收指示由基站确定的上行链路权重向量的控制信息和使用该探测信号的最大信道质量值，并发送与上行链路形成的发射信号波束权重向量经由多个天线。

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