专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110242878A1 METHODS FOR OPERATING MEMORY ELEMENTS 有权
标题翻译：操作记忆元素的方法
公开(公告)号：US20110242878A1
公开(公告)日：2011-10-06
申请号：US13159288
申请日：2011-06-13
申请人： Jennifer Taylor , John D. Porter
发明人： Jennifer Taylor , John D. Porter
IPC分类号： G11C11/00 , G11C7/12
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C27/005 , G11C29/50 , G11C29/50008 , G11C2213/72 , G11C2213/79
摘要： Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
摘要翻译：公开了用于测量多个存储元件的电阻的方法。存储器元件可以是多位存储器，并且通过精确测量多位存储器元件的电阻，可以实现多少和哪些存储器元件落入特定存储器范围的确定。此外，该信息的存储和/或显示可以允许创建用于一个或多个存储器阵列的建模的电阻分布直方图。

2. 发明申请

US20110085375A1 METHODS FOR DETERMINING RESISTANCE OF PHASE CHANGE MEMORY ELEMENTS 有权
标题翻译：确定相变记忆元件电阻的方法
公开(公告)号：US20110085375A1
公开(公告)日：2011-04-14
申请号：US12969364
申请日：2010-12-15
申请人： Jennifer Taylor , John D. Porter
发明人： Jennifer Taylor , John D. Porter
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C27/005 , G11C29/50 , G11C29/50008 , G11C2213/72 , G11C2213/79
摘要： Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
摘要翻译：公开了用于测量多个存储元件的电阻的方法。存储器元件可以是多位存储器，并且通过精确测量多位存储器元件的电阻，可以实现多少和哪些存储器元件落入特定存储器范围的确定。此外，该信息的存储和/或显示可以允许创建用于一个或多个存储器阵列的建模的电阻分布直方图。

3. 发明授权

US07864609B2 Methods for determining resistance of phase change memory elements 有权
公开(公告)号：US07864609B2
公开(公告)日：2011-01-04
申请号：US12165273
申请日：2008-06-30
申请人： John D. Porter , Jennifer Taylor
发明人： John D. Porter , Jennifer Taylor
IPC分类号： G11C7/02
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C27/005 , G11C29/50 , G11C29/50008 , G11C2213/72 , G11C2213/79
摘要： Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.

4. 发明申请

US20090323408A1 METHODS FOR DETERMINING RESISTANCE OF PHASE CHANGE MEMORY ELEMENTS 有权
标题翻译：确定相变记忆元件电阻的方法
公开(公告)号：US20090323408A1
公开(公告)日：2009-12-31
申请号：US12165273
申请日：2008-06-30
申请人： Jennifer Taylor , JOHN D. PORTER
发明人： Jennifer Taylor , JOHN D. PORTER
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C27/005 , G11C29/50 , G11C29/50008 , G11C2213/72 , G11C2213/79
摘要： Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
摘要翻译：公开了用于测量多个存储元件的电阻的方法。存储器元件可以是多位存储器，并且通过精确测量多位存储器元件的电阻，可以实现多少和哪些存储器元件落入特定存储器范围的确定。此外，该信息的存储和/或显示可以允许创建用于一个或多个存储器阵列的建模的电阻分布直方图。

5. 发明授权

US08743640B2 Methods and systems for operating memory elements 有权
标题翻译：用于操作内存元素的方法和系统
公开(公告)号：US08743640B2
公开(公告)日：2014-06-03
申请号：US13752037
申请日：2013-01-28
申请人： Jennifer Taylor , John D. Porter
发明人： Jennifer Taylor , John D. Porter
IPC分类号： G11C7/02
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C27/005 , G11C29/50 , G11C29/50008 , G11C2213/72 , G11C2213/79
摘要： Methods and systems for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
摘要翻译：公开了用于测量多个存储元件的电阻的方法和系统。存储器元件可以是多位存储器，并且通过精确测量多位存储器元件的电阻，可以实现多少和哪些存储器元件落入特定存储器范围的确定。此外，该信息的存储和/或显示可以允许创建用于一个或多个存储器阵列的建模的电阻分布直方图。

6. 发明授权

US08363500B2 Methods for operating memory elements 有权
标题翻译：操作内存元素的方法
公开(公告)号：US08363500B2
公开(公告)日：2013-01-29
申请号：US13159288
申请日：2011-06-13
申请人： Jennifer Taylor , John D. Porter
发明人： Jennifer Taylor , John D. Porter
IPC分类号： G11C7/02
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C27/005 , G11C29/50 , G11C29/50008 , G11C2213/72 , G11C2213/79
摘要： Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
摘要翻译：公开了用于测量多个存储元件的电阻的方法。存储器元件可以是多位存储器，并且通过精确测量多位存储器元件的电阻，可以实现多少和哪些存储器元件落入特定存储器范围的确定。此外，该信息的存储和/或显示可以允许创建用于一个或多个存储器阵列的建模的电阻分布直方图。

7. 发明授权

US07961538B2 Methods for determining resistance of phase change memory elements 有权
标题翻译：确定相变存储元件电阻的方法
公开(公告)号：US07961538B2
公开(公告)日：2011-06-14
申请号：US12969364
申请日：2010-12-15
申请人： Jennifer Taylor , John D. Porter
发明人： Jennifer Taylor , John D. Porter
IPC分类号： G11C7/02
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C27/005 , G11C29/50 , G11C29/50008 , G11C2213/72 , G11C2213/79
摘要： Methods for measuring the resistance of multiple memory elements are disclosed. The memory elements may be multi-bit memory and through precise measurement of resistance of the multi-bit memory elements, determination of how many and which memory elements fall into specific memory ranges can be accomplished. Furthermore, storage and/or display of this information may allow for the creation of resistance distribution histograms for modeling of one or more memory arrays.
摘要翻译：公开了用于测量多个存储元件的电阻的方法。存储器元件可以是多位存储器，并且通过精确测量多位存储器元件的电阻，可以实现多少和哪些存储器元件落入特定存储器范围的确定。此外，该信息的存储和/或显示可以允许创建用于一个或多个存储器阵列的建模的电阻分布直方图。

8. 发明授权

US07366021B2 Method and apparatus for sensing flash memory using delta sigma modulation 有权
标题翻译：用于使用Δ-Σ调制来感测闪速存储器的方法和装置
公开(公告)号：US07366021B2
公开(公告)日：2008-04-29
申请号：US11121114
申请日：2005-05-04
申请人： Jennifer Taylor , R. J. Baker
发明人： Jennifer Taylor , R. J. Baker
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C7/062 , G11C7/067 , G11C11/5642 , G11C2207/063
摘要： A simple method and device for accurately measuring flash memory cell current. The sensing scheme comprises an integrator, an analog to digital converter, and a digital to analog converter. The method comprises the acts of applying an input current and a feedback output current to a summer, integrating the resulting summer output over time, passing the integrated output to a clocked comparator, outputting a comparator output which controls a feedback circuit that keeps the integrator's voltage at the same level as a reference voltage, and outputting a digital average current to a counter. Delta sigma modulation (averaging) is employed to cancel out noise that would otherwise affect the cell current measurement.
摘要翻译：一种用于精确测量闪存单元电流的简单方法和设备。感测方案包括积分器，模数转换器和数模转换器。该方法包括将输入电流和反馈输出电流施加到加法器的动作，将产生的加法器输出随时间积分，将积分输出与时钟比较器进行积分，输出比较器输出，该比较器输出控制保持积分器电压的反馈电路与参考电压处于相同电平，并将数字平均电流输出到计数器。采用ΔΣ调制（平均）来抵消否则将影响电池电流测量的噪声。

9. 发明申请

US20140269118A1 INPUT BUFFER APPARATUSES AND METHODS 有权
标题翻译：输入缓冲器设备和方法
公开(公告)号：US20140269118A1
公开(公告)日：2014-09-18
申请号：US13839996
申请日：2013-03-15
申请人： Jennifer Taylor , Dragos Dimitriu
发明人： Jennifer Taylor , Dragos Dimitriu
IPC分类号： G11C7/10 , H03F3/45
CPC分类号： H03F3/45179 , G11C7/1084 , H03F3/45183 , H03F2203/45051
摘要： Apparatuses and methods are disclosed, including an apparatus with a first differential amplifier to amplify an input signal into a first output signal, a second differential amplifier to amplify the input signal into a second output signal that is complementary to the first output signal, and a feedback resistance coupled between the first output signal and the second output signal. Additional apparatuses and methods are described.
摘要翻译：公开了一种装置和方法，包括具有将输入信号放大为第一输出信号的第一差分放大器的装置，将输入信号放大为与第一输出信号互补的第二输出信号的第二差分放大器，以及耦合在第一输出信号和第二输出信号之间的反馈电阻。描述附加的装置和方法。

10. 发明申请

US20080158988A1 METHOD AND APPARATUS FOR SENSING FLASH MEMORY USING DELTA SIGMA MODULATION 有权
标题翻译：用于使用DELTA SIGMA调制来感测闪存的方法和装置
公开(公告)号：US20080158988A1
公开(公告)日：2008-07-03
申请号：US12046571
申请日：2008-03-12
申请人： Jennifer Taylor , R. J. Baker
发明人： Jennifer Taylor , R. J. Baker
IPC分类号： G11C16/06
CPC分类号： G11C16/26 , G11C7/062 , G11C7/067 , G11C11/5642 , G11C2207/063
摘要： A simple method and device for accurately measuring flash memory cell current. The sensing scheme comprises an integrator, an analog to digital converter, and a digital to analog converter. The method comprises the acts of applying an input current and a feedback output current to a summer, integrating the resulting summer output over time, passing the integrated output to a clocked comparator, outputting a comparator output which controls a feedback circuit that keeps the integrator's voltage at the same level as a reference voltage, and outputting a digital average current to a counter. Delta sigma modulation (averaging) is employed to cancel out noise that would otherwise affect the cell current measurement.
摘要翻译：一种用于精确测量闪存单元电流的简单方法和设备。感测方案包括积分器，模数转换器和数模转换器。该方法包括将输入电流和反馈输出电流施加到加法器的动作，将所得到的加法器输出随时间积分，将积分输出与时钟比较器进行积分，输出比较器输出，该比较器输出控制保持积分器电压的反馈电路与参考电压处于相同电平，并将数字平均电流输出到计数器。采用ΔΣ调制（平均）来抵消否则将影响电池电流测量的噪声。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式