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    • 1. 发明申请
    • E-Beam Enhanced Decoupled Source for Semiconductor Processing
    • 用于半导体处理的电子束增强去耦源
    • US20120258606A1
    • 2012-10-11
    • US13356962
    • 2012-01-24
    • John Patrick HollandPeter L. G. VentzekHarmeet SinghJun ShinagawaAkira Koshiishi
    • John Patrick HollandPeter L. G. VentzekHarmeet SinghJun ShinagawaAkira Koshiishi
    • H01L21/26H01L21/3065
    • H01J37/32357H01J37/32376H01J37/32449H01J37/32596
    • A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.
    • 半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。 该系统还包括与处理室分开限定的等离子体室。 等离子体室被定义为产生等离子体。 该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。 多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。 该系统还包括用于将电子注入到处理室中以控制处理室内的电子能量分布的电子注入装置,从而控制处理室内的离子 - 自由基密度比。 在一个实施例中,电子束源被定义为将电子束透过衬底支撑件上方并穿过衬底支撑件的处理室。
    • 3. 发明授权
    • E-beam enhanced decoupled source for semiconductor processing
    • 用于半导体处理的电子束增强去耦源
    • US09111728B2
    • 2015-08-18
    • US13356962
    • 2012-01-24
    • John Patrick HollandPeter L. G. VentzekHarmeet SinghJun ShinagawaAkira Koshiishi
    • John Patrick HollandPeter L. G. VentzekHarmeet SinghJun ShinagawaAkira Koshiishi
    • H01J37/077H01J37/065H01J37/32H01J37/16
    • H01J37/32357H01J37/32376H01J37/32449H01J37/32596
    • A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.
    • 半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。 该系统还包括与处理室分开限定的等离子体室。 等离子体室被定义为产生等离子体。 该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。 多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。 该系统还包括用于将电子注入到处理室中以控制处理室内的电子能量分布的电子注入装置,从而控制处理室内的离子 - 自由基密度比。 在一个实施例中,电子束源被定义为将电子束透过衬底支撑件上方并穿过衬底支撑件的处理室。
    • 6. 发明申请
    • E-Beam Enhanced Decoupled Source for Semiconductor Processing
    • 用于半导体处理的电子束增强去耦源
    • US20120258607A1
    • 2012-10-11
    • US13357044
    • 2012-01-24
    • John Patrick HollandPeter L.G. VentzekHarmeet SinghJun ShinagawaAkira Koshiishi
    • John Patrick HollandPeter L.G. VentzekHarmeet SinghJun ShinagawaAkira Koshiishi
    • H01L21/26H01L21/3065
    • H01J37/32357
    • A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes a plurality of power delivery components defined to deliver power to the plurality of fluid transmission pathways, so as to generate supplemental plasma within the plurality of fluid transmission pathways. The plurality of fluid transmission pathways are defined to supply reactive constituents of the supplemental plasma to the processing chamber.
    • 半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。 该系统还包括与处理室分开限定的等离子体室。 等离子体室被定义为产生等离子体。 该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。 多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。 该系统还包括多个功率输送部件,其被定义成将功率输送到多个流体传输路径,以便在多个流体传输通路内产生补充等离子体。 多个流体传输路径被限定为将补充等离子体的反应性成分提供给处理室。