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1. 发明申请

US20120258606A1 E-Beam Enhanced Decoupled Source for Semiconductor Processing 有权
标题翻译：用于半导体处理的电子束增强去耦源
公开(公告)号：US20120258606A1
公开(公告)日：2012-10-11
申请号：US13356962
申请日：2012-01-24
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
IPC分类号： H01L21/26 , H01L21/3065
CPC分类号： H01J37/32357 , H01J37/32376 , H01J37/32449 , H01J37/32596
摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.
摘要翻译：半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。该系统还包括与处理室分开限定的等离子体室。等离子体室被定义为产生等离子体。该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。该系统还包括用于将电子注入到处理室中以控制处理室内的电子能量分布的电子注入装置，从而控制处理室内的离子 - 自由基密度比。在一个实施例中，电子束源被定义为将电子束透过衬底支撑件上方并穿过衬底支撑件的处理室。

2. 发明授权

US09177756B2 E-beam enhanced decoupled source for semiconductor processing 有权
标题翻译：用于半导体处理的电子束增强去耦源
公开(公告)号：US09177756B2
公开(公告)日：2015-11-03
申请号：US13357003
申请日：2012-01-24
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
IPC分类号： H01L21/3065 , C23F1/00 , H01J37/04 , H01J37/32
CPC分类号： H01J37/04 , H01J37/32018 , H01J37/32357 , H01J37/32596
摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electrode disposed within the processing chamber separate from the substrate support. The system also includes a power supply electrically connected to the electrode. The power supply is defined to supply electrical power to the electrode so as to liberate electrons from the electrode into the processing chamber.
摘要翻译：半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。该系统还包括与处理室分开限定的等离子体室。等离子体室被定义为产生等离子体。该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。该系统还包括设置在与衬底支撑件分开的处理室内的电极。该系统还包括电连接到电极的电源。电源被定义为向电极提供电力，以便将电子从电极释放到处理室中。

3. 发明授权

US09111728B2 E-beam enhanced decoupled source for semiconductor processing 有权
标题翻译：用于半导体处理的电子束增强去耦源
公开(公告)号：US09111728B2
公开(公告)日：2015-08-18
申请号：US13356962
申请日：2012-01-24
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Jun Shinagawa , Akira Koshiishi
IPC分类号： H01J37/077 , H01J37/065 , H01J37/32 , H01J37/16
CPC分类号： H01J37/32357 , H01J37/32376 , H01J37/32449 , H01J37/32596
摘要： A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.
摘要翻译：半导体基板处理系统包括处理室和限定为在处理室中支撑基板的基板支撑件。该系统还包括与处理室分开限定的等离子体室。等离子体室被定义为产生等离子体。该系统还包括将等离子体室流体连接到处理室的多个流体传输路径。多个流体传输路径被限定为将等离子体的反应性组分从等离子体室提供给处理室。该系统还包括用于将电子注入到处理室中以控制处理室内的电子能量分布的电子注入装置，从而控制处理室内的离子 - 自由基密度比。在一个实施例中，电子束源被定义为将电子束透过衬底支撑件上方并穿过衬底支撑件的处理室。

4. 发明授权

US08980046B2 Semiconductor processing system with source for decoupled ion and radical control 有权
标题翻译：半导体处理系统，具有去耦离子和自由基控制的源
公开(公告)号：US08980046B2
公开(公告)日：2015-03-17
申请号：US13431836
申请日：2012-03-27
申请人： Akira Koshiishi , Peter L. G. Ventzek , Jun Shinagawa , John Patrick Holland
发明人： Akira Koshiishi , Peter L. G. Ventzek , Jun Shinagawa , John Patrick Holland
IPC分类号： C23F1/00
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/509 , H01J37/32422 , H05H1/46 , H05H1/48 , H05H2001/466
摘要： A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.
摘要翻译：顶板组件位于基板支撑件的上方并与其间隔开，使得在顶板组件和基板支撑件之间存在处理区域。顶板组件包括中心等离子体生成微型室和围绕中心等离子体产生微室以同心方式定位的多个环形等离子体产生微室。中心和环形等离子体产生微室中的相邻定位的等离子体生成微室彼此间隔开，以便在它们之间形成多个轴向排气孔。中心和环形等离子体产生微室中的每一个被定义为在其中产生相应的等离子体，并且将其等离子体的反应性组分提供给顶板组件和衬底支撑件之间的加工区域。

5. 发明申请

US20130157469A1 Semiconductor Processing System with Source for Decoupled Ion and Radical Control 有权
标题翻译：具有解耦离子和自由基控制源的半导体处理系统
公开(公告)号：US20130157469A1
公开(公告)日：2013-06-20
申请号：US13431836
申请日：2012-03-27
申请人： Akira Koshiishi , Peter L. G. Ventzek , Jun Shinagawa , John Patrick Holland
发明人： Akira Koshiishi , Peter L. G. Ventzek , Jun Shinagawa , John Patrick Holland
IPC分类号： H01L21/3065 , H05H1/24 , C23C16/50
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/509 , H01J37/32422 , H05H1/46 , H05H1/48 , H05H2001/466
摘要： A top plate assembly is positioned above and spaced apart from the substrate support, such that a processing region exists between the top plate assembly and the substrate support. The top plate assembly includes a central plasma generation microchamber and a plurality of annular-shaped plasma generation microchambers positioned in a concentric manner about the central plasma generation microchamber. Adjacently positioned ones of the central and annular-shaped plasma generation microchambers are spaced apart from each other so as to form a number of axial exhaust vents therebetween. Each of the central and annular-shaped plasma generation microchambers is defined to generate a corresponding plasma therein and supply reactive constituents of its plasma to the processing region between the top plate assembly and the substrate support.
摘要翻译：顶板组件位于基板支撑件的上方并与其间隔开，使得在顶板组件和基板支撑件之间存在处理区域。顶板组件包括中心等离子体生成微型室和围绕中心等离子体产生微室以同心方式定位的多个环形等离子体产生微室。中心和环形等离子体产生微室中的相邻定位的等离子体生成微室彼此间隔开，以便在它们之间形成多个轴向排气孔。中心和环形等离子体产生微室中的每一个被定义为在其中产生相应的等离子体，并且将其等离子体的反应性组分提供给顶板组件和衬底支撑件之间的加工区域。

6. 发明授权

US08900403B2 Semiconductor processing system having multiple decoupled plasma sources 有权
标题翻译：具有多个解耦等离子体源的半导体处理系统
公开(公告)号：US08900403B2
公开(公告)日：2014-12-02
申请号：US13104925
申请日：2011-05-10
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
IPC分类号： H01L21/3065 , C23F1/08 , H01J37/32
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32633 , H01J37/32899 , H01L21/3065
摘要： A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.
摘要翻译：半导体基板处理系统包括具有处理区域和基板支撑体的室。该系统包括设置在基板支撑件上方的室内的顶板组件。顶板组件包括分别形成在顶板组件的下表面中的第一组和第二组等离子体微室。气体供应通道的第一网络通过顶板组件形成，以将第一工艺气体流动到第一组等离子体微室，以转化为第一等离子体。通过顶板组件形成一组排气通道。第二组等离子体微室形成在排气通道组内。气体供应通道的第二网络通过顶板组件形成，以将第二工艺气体流动到第二组等离子体微室，以转化为第二等离子体。

7. 发明授权

US08900402B2 Semiconductor processing system having multiple decoupled plasma sources 有权
标题翻译：具有多个解耦等离子体源的半导体处理系统
公开(公告)号：US08900402B2
公开(公告)日：2014-12-02
申请号：US13104923
申请日：2011-05-10
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
IPC分类号： H01L21/3065 , C23F1/08 , H01J37/32
CPC分类号： H01J37/32899 , H01J37/32633
摘要： A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.
摘要翻译：半导体衬底处理系统包括限定为在暴露于处理区域中支撑衬底的衬底支撑件。该系统还包括第一等离子体室，其被定义为产生第一等离子体并且将第一等离子体的反应性成分供应到处理区域。该系统还包括被定义为产生第二等离子体并且将第二等离子体的反应性组分供应到处理区域的第二等离子体室。第一和第二等离子体室被限定为独立控制。

8. 发明申请

US20120289054A1 Semiconductor Processing System Having Multiple Decoupled Plasma Sources 有权
标题翻译：具有多个去耦等离子体源的半导体处理系统
公开(公告)号：US20120289054A1
公开(公告)日：2012-11-15
申请号：US13104925
申请日：2011-05-10
申请人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
发明人： John Patrick Holland , Peter L. G. Ventzek , Harmeet Singh , Richard Gottscho
IPC分类号： H01L21/3065 , C23F1/08
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32633 , H01J37/32899 , H01L21/3065
摘要： A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.
摘要翻译：半导体基板处理系统包括具有处理区域和基板支撑体的室。该系统包括设置在基板支撑件上方的室内的顶板组件。顶板组件包括分别形成在顶板组件的下表面中的第一组和第二组等离子体微室。气体供应通道的第一网络通过顶板组件形成，以将第一工艺气体流动到第一组等离子体微室，以转化为第一等离子体。通过顶板组件形成一组排气通道。第二组等离子体微室形成在排气通道组内。气体供应通道的第二网络通过顶板组件形成，以将第二工艺气体流动到第二组等离子体微室，以转化为第二等离子体。

9. 发明授权

US07449414B2 Method of treating a mask layer prior to performing an etching process 有权
标题翻译：在进行蚀刻处理之前处理掩模层的方法
公开(公告)号：US07449414B2
公开(公告)日：2008-11-11
申请号：US11499678
申请日：2006-08-07
申请人： Peter L. G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
发明人： Peter L. G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
IPC分类号： H01L21/302
CPC分类号： H05H1/44 , B05D1/32 , B05D1/62 , B05D3/145 , H01J37/32027 , H01J37/32036 , H01J37/32082 , H01L21/0273 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with a hydrocarbon chemistry or hydrofluorocarbon chemistry or fluorocarbon chemistry or combination of two or more thereof prior to proceeding with the etching process.
摘要翻译：描述了在蚀刻下面的薄膜之前对掩模层进行预处理的方法。使用通过弹道电子束增强的等离子体蚀刻诸如电介质膜的薄膜。为了减少图案定义的损失，例如线边缘粗糙度效应，在进行蚀刻工艺之前，用烃化学或氢氟烃化学或碳氟化合物或其两种或更多种的组合处理掩模层。

10. 发明申请

US20120255678A1 Multi-Frequency Hollow Cathode System for Substrate Plasma Processing 审中-公开
标题翻译：用于基板等离子体处理的多频空心阴极系统
公开(公告)号：US20120255678A1
公开(公告)日：2012-10-11
申请号：US13084343
申请日：2011-04-11
申请人： John Patrick Holland , Peter L. G. Ventzek
发明人： John Patrick Holland , Peter L. G. Ventzek
IPC分类号： C23F1/08
CPC分类号： H01J37/32596
摘要： A hollow cathode system is provided for plasma generation in substrate plasma processing. The system includes a plurality of electrically conductive plates stacked in a layered manner. Dielectric sheets are disposed between each adjacently positioned pair of the plurality of electrically conductive plates. A number of holes are each formed to extend through the plurality of electrically conductive plates and dielectric sheets. The system also includes at least two independently controllable radiofrequency (RF) power sources electrically connected to one or more of the plurality of electrically conductive plates. The RF power sources are independently controllable with regard to frequency and amplitude.
摘要翻译：提供了一种用于衬底等离子体处理中的等离子体产生的空心阴极系统。该系统包括以分层方式堆叠的多个导电板。电介质片被布置在每个相邻定位的多个导电板之间。各个孔形成为延伸穿过多个导电板和电介质片。该系统还包括电连接到多个导电板中的一个或多个的至少两个可独立控制的射频（RF）电源。 RF功率源可以根据频率和振幅独立控制。

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