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1. 发明申请

US20090147101A1 Solid-state imaging device, method of manufacturing the same, and camera 失效
标题翻译：固态成像装置及其制造方法及相机
公开(公告)号：US20090147101A1
公开(公告)日：2009-06-11
申请号：US12292338
申请日：2008-11-17
申请人： Keiji Tatani , John Rennie , Susumu Inoue , Atsushi Toda
发明人： Keiji Tatani , John Rennie , Susumu Inoue , Atsushi Toda
IPC分类号： H04N9/73
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14627
摘要： A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and an inner-layer lens. Each of the plurality of arrayed pixels includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is configured to block infrared light and faces a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The inner-layer lens is formed below the optical inner filter layer.
摘要翻译：提供固态成像装置。固态成像装置包括多个阵列像素，光学内部滤光器层和内部透镜。多个排列像素中的每一个包括光电转换部分和像素晶体管。光学内部滤波器层被配置为阻挡红外光并且面对阵列像素之中所需像素的光电转换部分的光接收表面。内层透镜形成在光学内滤光层的下方。

2. 发明申请

US20070100502A1 Systems and methods to control a multiple-fuel steam production system 审中-公开
标题翻译：控制多燃料蒸汽生产系统的系统和方法
公开(公告)号：US20070100502A1
公开(公告)日：2007-05-03
申请号：US11262271
申请日：2005-10-27
申请人： John Rennie , Chris Nowack
发明人： John Rennie , Chris Nowack
IPC分类号： G05B21/00
CPC分类号： G05B13/048 , F22B35/18 , F23N1/002 , F23N2021/10 , F23N2023/04 , F23N2023/08 , F23N2023/52 , G05B13/0275
摘要： Systems, methods, and articles of manufacture to control a multiple-fuel steam production system are disclosed. An example method obtains a plurality of input values associated with producing steam and uses a model predictive controller to determine a first value associated with predicting an amount of a first fuel and a second value associated with predicting an amount of a second fuel to produce an amount of steam. Fuel feed rates of the first and second fuels are then controlled based on the first and second trajectory values.
摘要翻译：公开了用于控制多燃料蒸汽生产系统的系统，方法和制品。示例性方法获得与产生蒸汽相关联的多个输入值，并且使用模型预测控制器来确定与预测第一燃料的量相关联的第一值和与预测第二燃料的量相关联的第二值以产生量的蒸汽。然后基于第一和第二轨迹值来控制第一和第二燃料的燃料供给速率。

3. 发明授权

US4051403A Channel plate multiplier having higher secondary emission coefficient near input 失效
标题翻译：具有较高二次排放系数的通道板乘法器
公开(公告)号：US4051403A
公开(公告)日：1977-09-27
申请号：US713165
申请日：1976-08-10
申请人： Robert M. Feingold , Carl W. Hoover, Jr. , John Rennie
发明人： Robert M. Feingold , Carl W. Hoover, Jr. , John Rennie
IPC分类号： H01J31/50 , H01J43/24 , H01J43/22
CPC分类号： H01J43/246 , H01J31/507
摘要： An improved microchannel plate is provided by adding a coating or coatingso the input end of the channels which have a much higher second emission coefficient than the material which forms the body of the plate.

4. 发明申请

US20100177223A1 Solid-state imaging device and camera 失效
标题翻译：固态成像装置和相机
公开(公告)号：US20100177223A1
公开(公告)日：2010-07-15
申请号：US12655691
申请日：2010-01-04
申请人： John Rennie
发明人： John Rennie
IPC分类号： H04N5/335 , H01L31/107
CPC分类号： H01L31/107 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L31/0232
摘要： A solid-state imaging device includes: an avalanche photodiode having a structure including an n+ region, a p+ region, and an avalanche region interposed between the n+ region and the p+ region, all of which are formed to extend in a thickness direction of a semiconductor base; and a pixel repeatedly having the structure of the avalanche photodiode.
摘要翻译：固态成像装置包括：雪崩光电二极管，其具有包括n +区域，p +区域和插入在n +区域和p +区域之间的雪崩区域的结构，所有这些都形成为在厚度方向上延伸半导体基地以及重复具有雪崩光电二极管的结构的像素。

5. 发明授权

US6121638A Multi-layer structured nitride-based semiconductor devices 失效
标题翻译：多层结构氮化物基半导体器件
公开(公告)号：US6121638A
公开(公告)日：2000-09-19
申请号：US955747
申请日：1997-10-22
申请人： John Rennie , Genichi Hatakoshi , Shinji Saito
发明人： John Rennie , Genichi Hatakoshi , Shinji Saito
IPC分类号： H01L33/00 , H01L33/32 , H01S5/327 , H01S5/343 , A01L33/00 , A01L31/0328 , A01L31/0336 , A01L31/109
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01S2301/173 , H01S5/3214 , H01S5/327 , H01S5/34333
摘要： At an n--n hetero-interface in a GaN-based or ZnSe-based multilayered semiconductor laser and light-emitting diode, an excessive voltage drop causing the operating voltage to increased is reduced, thereby lengthening the service life of the device. A single or plurality of n-type intermediate layers are provided in the n--n hetero-interface region where the excessive voltage drop develops. The excessive voltage drop developing at the n--n hetero-interface is decreased by setting the energy value at the edge of the conduction band of each intermediate layer to a mid-value between the energy values at the edges of the conduction bands of the n-type compound semiconductors adjoining both sides of the intermediate layer. The configuration of a GaN-based MQW laser including the intermediate layer formed on sapphire substrate is shown. The relationship between the lattice constant of an intermediate layer necessary for obtaining an intermediate layer excellent in crystallinity suitable for the above object and the lattice constants of compound semiconductors adjoining both sides of the intermediate layer is described.
摘要翻译：在基于GaN或ZnSe的多层半导体激光器和发光二极管中的n-n异质界面处，降低了导致工作电压增加的过大的电压降，从而延长了器件的使用寿命。在形成过大的电压降的n-n异质界面区域中设置单个或多个n型中间层。通过将n型异质界面的导带边缘处的能量值设定在n型导带边缘的能量值之间的中间值，可以减小在nn异质界面处产生的过大的电压降邻接中间层两侧的复合半导体。示出了包括在蓝宝石衬底上形成的中间层的GaN基MQW激光器的构造。描述了获得适合于上述目的的结晶度优异的中间层所需的中间层的晶格常数与邻接中间层两侧的化合物半导体的晶格常数之间的关系。

6. 发明授权

US6060335A Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US6060335A
公开(公告)日：2000-05-09
申请号：US20900
申请日：1998-02-09
申请人： John Rennie , Genichi Hatakoshi , Masaaki Onomura
发明人： John Rennie , Genichi Hatakoshi , Masaaki Onomura
IPC分类号： H01L21/205 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/32 , H01L33/36 , H01S5/00 , H01S5/323 , H01S5/343 , H01L21/00
CPC分类号： H01L33/025 , B82Y20/00 , H01L33/007 , H01S5/34333 , Y10S148/095
摘要： According to the present invention, a high-efficiency and high reliability GaN-based semiconductor light emitting device having uniform light emission from the active layer, can be obtained by suppressing the defect density of the interface between the guide layer and cladding layer. When manufacturing the GaN-based semiconductor light emitting device, the growth temperature and pressure are increased, or the carrier gas flow rate and ammonia flow rate necessary for efficiently growing p-GaAlN are increased, in the vicinity of the interface between the upper p-GaN guide layer and p-AlGaN cladding layer in particular, and thus a method and structure, capable of suppressing these high defect densities generated, can be provided. By selecting appropriate conditions, namely whether the increment in the temperature and pressure, and the increment in the flow rates of the carrier gas and ammonia should be carried out during the growth of the cladding layer or after, or they should be carried out at the same time or independently, or by inserting an InAlGaN or InGaN buffering layer for preventing the generation of defects, between the waveguide layer and cladding layer, the defect densities can be very much decreased.
摘要翻译：根据本发明，通过抑制引导层和包层之间的界面的缺陷密度，可以获得具有来自有源层的均匀发光的高效率和高可靠性的GaN基半导体发光器件。当制造GaN基半导体发光器件时，生长温度和压力增加，或者有效地生长p-GaAlN所需的载气流量和氨流量增加，在上p- GaN引导层和p-AlGaN包覆层，因此可以提供能够抑制所产生的高缺陷密度的方法和结构。通过选择适当的条件，即是否应在包层生长过程中或之后进行载运气体和氨的流量的升高和温度和压力的增加，或者应在或者通过在波导层和包层之间插入用于防止缺陷产生的InAlGaN或InGaN缓冲层，可以非常大地降低缺陷密度。

7. 发明授权

US5972730A Nitride based compound semiconductor light emitting device and method for producing the same 失效
标题翻译：氮化物系化合物半导体发光元件及其制造方法
公开(公告)号：US5972730A
公开(公告)日：1999-10-26
申请号：US937160
申请日：1997-09-25
申请人： Shinji Saito , John Rennie , Masaaki Onomura , Genichi Hatakoshi
发明人： Shinji Saito , John Rennie , Masaaki Onomura , Genichi Hatakoshi
IPC分类号： H01S5/02 , H01S5/323 , H01L21/00 , H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： H01S5/0201 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01L2224/8592 , H01L24/45 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01079 , H01L2924/12041 , H01L2924/12042 , H01S5/0202 , H01S5/32341
摘要： A wedge-like etching groove is formed so that stresses can be collected along a cleavage surface of a nitride based compound semiconductor, and end portions are separated from a substrate. With these operations, a light-emitting layer can form an excellent mirror by a natural cleavage. Further, by separating a portion of the end surfaces from the substrate, it is possible to suppress a deformation from the substrate and therefore, a deterioration due to the deformation can be prevented. Therefore, it is possible to provide a nitride based compound semiconductor light-emitting device which can form an excellent cleavage surface with a simple process.
摘要翻译：形成楔形蚀刻槽，使得可以沿着氮化物基化合物半导体的解理面收集应力，并且将端部与基板分离。通过这些操作，发光层可以通过天然裂解形成优异的反射镜。此外，通过从基板分离端部的一部分，可以抑制基板的变形，因此可以防止由于变形引起的劣化。因此，可以提供一种可以通过简单的工艺形成优异的熔融表面的氮化物基化合物半导体发光器件。

8. 发明授权

US5864171A Semiconductor optoelectric device and method of manufacturing the same 失效
公开(公告)号：US5864171A
公开(公告)日：1999-01-26
申请号：US623829
申请日：1996-03-29
申请人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
发明人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
IPC分类号： H01L21/203 , H01L21/301 , H01L21/31 , H01L33/06 , H01L33/16 , H01L33/20 , H01L33/24 , H01L33/28 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/02 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/327 , H01L33/00 , H01S3/19
CPC分类号： H01L33/20 , H01L33/16 , H01S5/0202 , H01S5/0213 , H01S5/3202 , H01S5/3226 , H01S5/32341 , Y10S438/973 , Y10S438/975
摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

9. 发明授权

US08969987B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08969987B2
公开(公告)日：2015-03-03
申请号：US13067918
申请日：2011-07-07
申请人： John Rennie
发明人： John Rennie
IPC分类号： H01L31/0232 , H01L27/146 , G02B5/20 , G02B5/22 , H01L31/0352
CPC分类号： H01L27/14645 , G02B5/201 , G02B5/223 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/0352
摘要： A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded.
摘要翻译：固态成像装置包括光接收部分，滤光层和量子点。在半导体衬底中形成进行光电转换的光接收部分。滤光层直接形成在其上形成有光接收部分的半导体衬底的表面上或通过其它层形成。具有基本相同直径的量子点形成在滤光层中。量子点的折射率高于其中嵌入量子点的滤光器层的折射率。

10. 再颁专利

USRE44215E1 Semiconductor optoelectric device and method of manufacturing the same 有权
公开(公告)号：USRE44215E1
公开(公告)日：2013-05-14
申请号：US13270287
申请日：2011-10-11
申请人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
发明人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
IPC分类号： H01L33/00 , H01S5/20
CPC分类号： H01L33/20 , H01L33/16 , H01S5/0202 , H01S5/0213 , H01S5/3202 , H01S5/3226 , H01S5/32341 , Y10S438/973 , Y10S438/975
摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

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