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1. 发明授权

US08969987B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08969987B2
公开(公告)日：2015-03-03
申请号：US13067918
申请日：2011-07-07
申请人： John Rennie
发明人： John Rennie
IPC分类号： H01L31/0232 , H01L27/146 , G02B5/20 , G02B5/22 , H01L31/0352
CPC分类号： H01L27/14645 , G02B5/201 , G02B5/223 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/0352
摘要： A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded.
摘要翻译：固态成像装置包括光接收部分，滤光层和量子点。在半导体衬底中形成进行光电转换的光接收部分。滤光层直接形成在其上形成有光接收部分的半导体衬底的表面上或通过其它层形成。具有基本相同直径的量子点形成在滤光层中。量子点的折射率高于其中嵌入量子点的滤光器层的折射率。

2. 再颁专利

USRE44215E1 Semiconductor optoelectric device and method of manufacturing the same 有权
公开(公告)号：USRE44215E1
公开(公告)日：2013-05-14
申请号：US13270287
申请日：2011-10-11
申请人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
发明人： Masahiro Yamamoto , Hidetoshi Fujimoto , Yoshihiro Kokubun , Masayuki Ishikawa , Shinji Saito , Yukie Nishikawa , John Rennie
IPC分类号： H01L33/00 , H01S5/20
CPC分类号： H01L33/20 , H01L33/16 , H01S5/0202 , H01S5/0213 , H01S5/3202 , H01S5/3226 , H01S5/32341 , Y10S438/973 , Y10S438/975
摘要： The present invention is intended to provide a semiconductor optoelectric device with high luminescent efficiency and a method of manufacturing the same. The semiconductor optoelectric device 18 according to the present invention is constructed by depositing compound-semiconductor layers 13 and 14 on a monocrystalline substrate 11 of a hexagonal close-packed structure. The shape of the monocrystalline substrate 11 is a parallelogram. Individual sides of the parallelogram are parallel to a orientation. As the monocrystalline substrate, sapphire, zinc oxide or silicon carbide may be used. As the compound-semiconductor layers, an n-type GaN layer 13 and p-type GaN layer 14 may be used.

3. 发明申请

US20080315339A1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US20080315339A1
公开(公告)日：2008-12-25
申请号：US11974605
申请日：2007-10-15
申请人： John Rennie
发明人： John Rennie
IPC分类号： H01L31/0232
CPC分类号： H01L27/14645 , G02B5/201 , G02B5/223 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/0352
摘要： A solid-state imaging device includes a light-receiving portion, an optical filter layer, and quantum dots. The light receiving portion, where a photoelectric conversion is carried out, is formed in a semiconductor substrate. The optical filter layer is directly formed on or formed through another layer on the surface of the semiconductor substrate in which the light-receiving portion is formed. Quantum dots having substantially equal diameters are formed in the optical filter layer. The quantum dots have higher refractive indexes than the refractive index of the optical filter layer in which the quantum dots are embedded.
摘要翻译：固态成像装置包括光接收部分，滤光层和量子点。在半导体衬底中形成进行光电转换的光接收部分。滤光层直接形成在其上形成有光接收部分的半导体衬底的表面上或通过其它层形成。具有基本相同直径的量子点形成在滤光层中。量子点的折射率高于其中嵌入量子点的滤光器层的折射率。

4. 发明授权

US06242761B1 Nitride compound semiconductor light emitting device 失效
标题翻译：氮化物半导体发光元件
公开(公告)号：US06242761B1
公开(公告)日：2001-06-05
申请号：US09026941
申请日：1998-02-20
申请人： Hidetoshi Fujimoto , John Rennie , Masahiro Yamamoto , Masayuki Ishikawa , Shinya Nunoue , Lisa Sugiura
发明人： Hidetoshi Fujimoto , John Rennie , Masahiro Yamamoto , Masayuki Ishikawa , Shinya Nunoue , Lisa Sugiura
IPC分类号： H01L2972
CPC分类号： H01L33/145 , H01L33/32 , H01S5/2205 , H01S5/2206 , H01S5/2214 , H01S5/2226 , H01S5/2231 , H01S5/32341
摘要： In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching. By applying a reverse bias voltage, the semiconductor can be activated only along a current path, and the remainder region is utilized as a current blocking layer. When the n-side electrode has a unique three-layered structure, a reduction in contact resistance and good wire bonding are promised.
摘要翻译：为了消除常规氮化物化合物半导体激光器结构中的问题，即由p型层中的高电阻引起的高操作电压和电极的高接触电阻，由干蚀刻引起的晶体损坏，电流不足注入，并且需要高电流密度，氮化物化合物半导体发光器件具有由n型B（1-xyz）In x AlyGazN（0≤x≤1,0<= y <= 1）形成的电流阻挡层，0 <= z <= 1）含有预定金属的氧化物的单晶，碳和表现出p型和n型导电性的杂质，或i型B（1-xyz）In x AlyGazN（0 <= x < 1，0 <= y <= 1，0 <= z <= 1）其中载体被氢或氧灭活以实现内部电流阻挡结构而不需要干法蚀刻的单晶。通过施加反向偏置电压，半导体只能沿着电流路径被激活，并且剩余区域被用作电流阻挡层。当n侧电极具有独特的三层结构时，承诺了接触电阻的降低和良好的引线接合。

5. 发明授权

US6057564A Semiconductor device having a GaNO region intermediate a GaN-based contact region and an electrode 失效
标题翻译：具有中间GaN基接触区域的GaNO区域和电极的半导体器件
公开(公告)号：US6057564A
公开(公告)日：2000-05-02
申请号：US119961
申请日：1998-07-21
申请人： John Rennie
发明人： John Rennie
IPC分类号： H01L29/45 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L29/452 , H01L33/32
摘要： A thin oxide region is introduced to a surface of a GaN layer prior to contact meal evaporation by carefully controlling the oxidation of the surface. This results in the normally present surface states to be smothered and thus a low band offset is observed in an ohmic contact comprising the contact metal and the GaN layer. The thickness of the oxide region preferably is about 8 .ANG. to 25 .ANG.. Other elements such as S, Se, Te, As, P and Hf can be used as an alternative to O. Devices using the thin region in the ohmic contact may include semiconductor laser devices, light emitting diodes, and III-V based transistors.
摘要翻译：通过仔细地控制表面的氧化，在接触进料蒸发之前将薄氧化物区域引入GaN层的表面。这导致通常存在的表面状态被窒息，因此在包含接触金属和GaN层的欧姆接触中观察到低带偏移。氧化物区域的厚度优选为约8至25。可以使用诸如S，Se，Te，As，P和Hf的其它元件作为O.替代O.使用欧姆接触中的薄区域的器件可以包括半导体激光器件，发光二极管和基于III-V的晶体管。

6. 发明授权

US5780873A Semiconductor device capable of easily forming cavity and its manufacturing method 失效
标题翻译：能够容易地形成腔体的半导体装置及其制造方法
公开(公告)号：US5780873A
公开(公告)日：1998-07-14
申请号：US689689
申请日：1996-08-13
申请人： Kazuhiko Itaya , Masahiro Yamamoto , Masaaki Onomura , Hidetoshi Fujimoto , Genichi Hatakoshi , Hideto Sugawara , Masayuki Ishikawa , John Rennie , Shinji Saito
发明人： Kazuhiko Itaya , Masahiro Yamamoto , Masaaki Onomura , Hidetoshi Fujimoto , Genichi Hatakoshi , Hideto Sugawara , Masayuki Ishikawa , John Rennie , Shinji Saito
IPC分类号： H01L27/15 , H01L33/06 , H01L33/08 , H01L33/14 , H01L33/16 , H01L33/20 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/323 , H01S5/343 , H01S5/40 , H01L33/00 , H01L29/04 , H01L31/036
CPC分类号： H01L33/32 , B82Y20/00 , H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/16 , H01S5/0215 , H01S5/34333 , H01S5/0202 , H01S5/0208 , H01S5/021 , H01S5/0213 , H01S5/0217 , H01S5/0218 , H01S5/2231 , H01S5/2232 , H01S5/3202 , H01S5/32391 , H01S5/34326 , H01S5/4043 , H01S5/4087
摘要： A semiconductor light-emitting device comprises a semiconductor light-emitting device section of a hexagonal type; and an electrically conductive semiconductor substrate of a cubic type combined into the semiconductor light-emitting device, and having an orientation of its cleavage facet conformed to an orientation of the cleavage facet of one of semiconductor layers forming the semiconductor light-emitting device section. The substrate of the cubic type is cleaved so that the semiconductor light-emitting device section of the hexagonal type is induced to be cleaved, and that a mirror surface can be easily formed.
摘要翻译：半导体发光器件包括六边形的半导体发光器件部分; 以及组合到半导体发光器件中的立方体的导电半导体衬底，并且其解理面的取向符合形成半导体发光器件部分的半导体层之一的解理面的取向。立方体的基板被切割，使得六方型的半导体发光器件部分被诱导被切割，并且可以容易地形成镜面。

7. 发明申请

US20100106043A1 BRAIN FUNCTION PARAMETER MEASUREMENT SYSTEM AND METHOD 审中-公开
标题翻译：脑功能参数测量系统及方法
公开(公告)号：US20100106043A1
公开(公告)日：2010-04-29
申请号：US12532303
申请日：2008-04-04
申请人： Peter Alexander Robinson , Christopher John Rennie
发明人： Peter Alexander Robinson , Christopher John Rennie
IPC分类号： A61B5/048
CPC分类号： A61B5/048 , A61B5/0482 , A61B5/04842
摘要： A method of fitting a proposed model for electro encephalography spectra to data derived from EEG recordings, the method comprising the steps of: (a) inputting at least one spectral trace of electroencephalographic measurements; (b) inputting a series of parameters associated with the proposed model; (c) applying a non-linear fitting algorithm to the at least one spectral trace and the at least one series of parameters, wherein the non-linear fitting model preferably can include a series of constraints associated with predetermined ones of the series of parameters so as to constrain the parameters in a predetermined range.
摘要翻译：一种将所提出的用于电脑图谱的模型拟合到从EEG记录导出的数据的方法，所述方法包括以下步骤：（a）输入至少一个脑电图测量的光谱轨迹; （b）输入与所提出的模型相关联的一系列参数; （c）对所述至少一个光谱轨迹和所述至少一系列参数应用非线性拟合算法，其中所述非线性拟合模型优选地可以包括与所述一系列参数中的预定参数相关联的一系列约束以将参数限制在预定范围内。

8. 发明申请

US20090147101A1 Solid-state imaging device, method of manufacturing the same, and camera 失效
标题翻译：固态成像装置及其制造方法及相机
公开(公告)号：US20090147101A1
公开(公告)日：2009-06-11
申请号：US12292338
申请日：2008-11-17
申请人： Keiji Tatani , John Rennie , Susumu Inoue , Atsushi Toda
发明人： Keiji Tatani , John Rennie , Susumu Inoue , Atsushi Toda
IPC分类号： H04N9/73
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14627
摘要： A solid-state imaging device is provided. The solid-state imaging device includes a plurality of arrayed pixels, an optical inner filter layer, and an inner-layer lens. Each of the plurality of arrayed pixels includes a photoelectric conversion portion and a pixel transistor. The optical inner filter layer is configured to block infrared light and faces a light-receiving surface of the photoelectric conversion portion of a desired pixel among the arrayed pixels. The inner-layer lens is formed below the optical inner filter layer.
摘要翻译：提供固态成像装置。固态成像装置包括多个阵列像素，光学内部滤光器层和内部透镜。多个排列像素中的每一个包括光电转换部分和像素晶体管。光学内部滤波器层被配置为阻挡红外光并且面对阵列像素之中所需像素的光电转换部分的光接收表面。内层透镜形成在光学内滤光层的下方。

9. 发明申请

US20090060879A1 Oral Compositions, Products and Methods Of Use 审中-公开
标题翻译：口服成分，产品和使用方法
公开(公告)号：US20090060879A1
公开(公告)日：2009-03-05
申请号：US12201098
申请日：2008-08-29
申请人： Jeffrey Warren Clymer , Paul John Rennie
发明人： Jeffrey Warren Clymer , Paul John Rennie
IPC分类号： A61K35/74 , A61K31/59 , A61K36/8962 , A61K36/00 , A61P31/00 , A61K31/122
CPC分类号： A61K31/592 , A61K31/593 , A61K35/745 , A61K36/82 , A61K2300/00
摘要： The present invention comprises an oral composition. More particularly to a method of treating and preventing a respiratory tract infection and providing energy, relieving stress, and mood enhancing benefits to a human comprising: the steps of administering to a human a composition comprising from about 450 IU to about 500,000 IU of cholecalciferol, per dose of the composition.
摘要翻译：本发明包括口服组合物。更具体地涉及治疗和预防呼吸道感染并向人类提供能量，缓解压力和情绪增强益处的方法，其包括以下步骤：向人施用包含约450IU至约500,000IU胆钙化醇的组合物，每剂量的组合物。

10. 发明申请

US20070100502A1 Systems and methods to control a multiple-fuel steam production system 审中-公开
标题翻译：控制多燃料蒸汽生产系统的系统和方法
公开(公告)号：US20070100502A1
公开(公告)日：2007-05-03
申请号：US11262271
申请日：2005-10-27
申请人： John Rennie , Chris Nowack
发明人： John Rennie , Chris Nowack
IPC分类号： G05B21/00
CPC分类号： G05B13/048 , F22B35/18 , F23N1/002 , F23N2021/10 , F23N2023/04 , F23N2023/08 , F23N2023/52 , G05B13/0275
摘要： Systems, methods, and articles of manufacture to control a multiple-fuel steam production system are disclosed. An example method obtains a plurality of input values associated with producing steam and uses a model predictive controller to determine a first value associated with predicting an amount of a first fuel and a second value associated with predicting an amount of a second fuel to produce an amount of steam. Fuel feed rates of the first and second fuels are then controlled based on the first and second trajectory values.
摘要翻译：公开了用于控制多燃料蒸汽生产系统的系统，方法和制品。示例性方法获得与产生蒸汽相关联的多个输入值，并且使用模型预测控制器来确定与预测第一燃料的量相关联的第一值和与预测第二燃料的量相关联的第二值以产生量的蒸汽。然后基于第一和第二轨迹值来控制第一和第二燃料的燃料供给速率。

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