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1. 发明授权

US08430960B2 Deposition systems and susceptor assemblies for depositing a film on a substrate 有权
标题翻译：用于在衬底上沉积膜的沉积系统和感受器组件
公开(公告)号：US08430960B2
公开(公告)日：2013-04-30
申请号：US11512800
申请日：2006-08-29
申请人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
发明人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/507 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/488
摘要： Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber. A buffer gas supply system is adapted to supply a flow of a buffer gas between the interior surface and at least a portion of the process gas such that the flow of the buffer gas forms a gas barrier layer to inhibit contact between the interior surface and components of the process gas when the process gas is disposed in the reaction chamber.
摘要翻译：寄生沉积物在用于在基底上沉积膜的沉积系统中进行控制，所述沉积系统的类型限定用于接收基底的反应室，并且在反应室中包括处理气体和与反应室邻接的内表面。通过在内表面和至少一部分处理气体之间流动缓冲气体以形成阻气层来提供这种控制，使得气体阻隔层抑制处理气体的内表面和组分之间的接触。用于使用工艺气体在衬底上沉积膜的沉积系统包括适于接收衬底和工艺气体的反应室。该系统还包括与反应室邻接的内表面。缓冲气体供应系统适于在内表面和处理气体的至少一部分之间提供缓冲气体流，使得缓冲气体的流动形成阻气层，以阻止内表面和部件之间的接触当处理气体设置在反应室中时，该工艺气体。

2. 发明授权

US07118781B1 Methods for controlling formation of deposits in a deposition system and deposition methods including the same 有权
标题翻译：用于控制沉积系统中沉积物形成的方法和包括其的沉积方法
公开(公告)号：US07118781B1
公开(公告)日：2006-10-10
申请号：US10414787
申请日：2003-04-16
申请人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
发明人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
IPC分类号： C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/488
摘要： A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.
摘要翻译：一种用于控制用于在衬底上沉积膜的沉积系统中的寄生沉积物的方法，所述沉积系统限定用于接收衬底并在反应室中包括工艺气体和与反应室邻接的内表面的反应室，包括流动在所述内表面和所述处理气体的至少一部分之间形成缓冲气体，以形成阻气层，使得所述阻气层抑制所述内表面和所述工艺气体的组分之间的接触。

3. 发明授权

US08052794B2 Directed reagents to improve material uniformity 有权
标题翻译：定向试剂，以提高材料均匀性
公开(公告)号：US08052794B2
公开(公告)日：2011-11-08
申请号：US11224374
申请日：2005-09-12
申请人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
发明人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
IPC分类号： C30B15/00 , C30B28/12
CPC分类号： C23C16/4584 , C23C16/45514 , C23C16/45563 , C30B25/02 , C30B25/12 , C30B25/14 , C30B29/36
摘要： A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.
摘要翻译：提供了一种用于局部控制半导体衬底上的外延沉积层的化学计量的方法。该方法包括：引导第一反应气体和掺杂气体穿过半导体衬底的顶表面，并将驱动气体和第二反应气体以与第一反应气体分离的方式引导基板，同时引导第二反应气体在衬底的边缘处的反应气体，以分别控制每个反应物，由此补偿和控制耗尽效应并改善衬底上所得到的外延层中的掺杂均匀性。

4. 发明申请

US20090136686A1 Methods for Controllably Induction Heating an Article 审中-公开
标题翻译：可控感应加热方法
公开(公告)号：US20090136686A1
公开(公告)日：2009-05-28
申请号：US12121072
申请日：2008-05-15
申请人： Joseph John Sumakeris , Michael James Paisley
发明人： Joseph John Sumakeris , Michael James Paisley
IPC分类号： H05B6/02
CPC分类号： H05B6/108 , C23C16/4581 , C23C16/46 , C30B25/10
摘要： A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.
摘要翻译：用于可控制地加热制品的加热装置限定处理室以保持物品并且包括壳体和EMF发生器。壳体包括围绕处理室的至少一部分的基座部分和插入在基座部分和处理室之间的导体部分。 EMF发生器可操作以在基座部分内感应涡流，使得在导体部分中基本上没有感应出涡流。导体部分可操作以将热量从基座部分传导到处理室。加热装置还可以包括盘片和限定在导体部分中的开口，其中开口插入在基座部分和盘片之间。

5. 发明授权

US07390367B1 Housing assembly for an induction heating device including liner or susceptor coating 有权
标题翻译：用于感应加热装置的壳体组件，包括衬套或基座涂层
公开(公告)号：US07390367B1
公开(公告)日：2008-06-24
申请号：US10714214
申请日：2003-11-14
申请人： Joseph John Sumakeris , Michael James Paisley
发明人： Joseph John Sumakeris , Michael James Paisley
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B6/10
CPC分类号： H05B6/108 , C23C16/4581 , C23C16/46 , C30B25/10
摘要： A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the processing chamber. The thermally conductive liner is interposed between the susceptor and the processing chamber. The liner is separately formed form the susceptor. The liner is removable from the susceptor without requiring disassembly of the susceptor.
摘要翻译：用于感应加热装置的壳体组件限定处理室并且包括感受器和导热衬垫。感受器围绕处理室的至少一部分。导热衬垫介于基座和处理室之间。衬垫从基座分开形成。衬垫可以从基座上移除，而不需要拆卸感受器。

6. 发明授权

US06896738B2 Induction heating devices and methods for controllably heating an article 有权
标题翻译：感应加热装置和用于可控地加热制品的方法
公开(公告)号：US06896738B2
公开(公告)日：2005-05-24
申请号：US10017492
申请日：2001-10-30
申请人： Joseph John Sumakeris , Michael James Paisley
发明人： Joseph John Sumakeris , Michael James Paisley
IPC分类号： H05B6/10 , C23C16/458 , C23C16/46 , C30B25/10 , H01L21/205 , H05B6/02 , H01L21/00 , C23C16/00
CPC分类号： H05B6/108 , C23C16/4581 , C23C16/46 , C30B25/10
摘要： A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.
摘要翻译：用于可控制地加热制品的加热装置限定处理室以保持物品并且包括壳体和EMF发生器。壳体包括围绕处理室的至少一部分的基座部分和插入在基座部分和处理室之间的导体部分。 EMF发生器可操作以在基座部分内感应涡流，使得在导体部分中基本上没有感应出涡流。导体部分可操作以将热量从基座部分传导到处理室。加热装置还可以包括盘片和限定在导体部分中的开口，其中开口插入在基座部分和盘片之间。

7. 发明申请

US20080127894A1 HOUSING ASSEMBLY FOR AN INDUCTION HEATING DEVICE INCLUDING LINER OR SUSCEPTOR COATING 有权
标题翻译：一种用于包括衬里或SUSCEPTOR涂层的感应加热装置的外壳组件
公开(公告)号：US20080127894A1
公开(公告)日：2008-06-05
申请号：US10714214
申请日：2003-11-14
申请人： Joseph John Sumakeris , Michael James Paisley
发明人： Joseph John Sumakeris , Michael James Paisley
IPC分类号： H05B6/10 , C23C16/00
CPC分类号： H05B6/108 , C23C16/4581 , C23C16/46 , C30B25/10
摘要： A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the processing chamber. The thermally conductive liner is interposed between the susceptor and the processing chamber. The liner is separately formed form the susceptor. The liner is removable from the susceptor without requiring disassembly of the susceptor.
摘要翻译：用于感应加热装置的壳体组件限定处理室并且包括感受器和导热衬垫。感受器围绕处理室的至少一部分。导热衬垫介于基座和处理室之间。衬垫从基座分开形成。衬垫可以从基座上移除，而不需要拆卸感受器。

8. 发明授权

US09155131B2 Methods for controllably induction heating an article 有权
标题翻译：用于可控感应加热制品的方法
公开(公告)号：US09155131B2
公开(公告)日：2015-10-06
申请号：US12121072
申请日：2008-05-15
申请人： Joseph John Sumakeris , Michael James Paisley
发明人： Joseph John Sumakeris , Michael James Paisley
IPC分类号： C23C16/00 , H05B6/10 , C23C16/458 , C23C16/46 , C30B25/10
CPC分类号： H05B6/108 , C23C16/4581 , C23C16/46 , C30B25/10
摘要： A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.
摘要翻译：用于可控制地加热制品的加热装置限定处理室以保持物品并且包括壳体和EMF发生器。壳体包括围绕处理室的至少一部分的基座部分和插入在基座部分和处理室之间的导体部分。 EMF发生器可操作以在基座部分内感应涡流，使得在导体部分中基本上没有感应出涡流。导体部分可操作以将热量从基座部分传导到处理室。加热装置还可以包括盘片和限定在导体部分中的开口，其中开口插入在基座部分和盘片之间。

9. 发明授权

US06974720B2 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby 有权
公开(公告)号：US06974720B2
公开(公告)日：2005-12-13
申请号：US10686795
申请日：2003-10-16
申请人： Joseph John Sumakeris , Hudson McDonald Hobgood , Michael James Paisley , Jason Ronald Jenny , Calvin H. Carter, Jr. , Valeri Fedorovich Tsvetkov
发明人： Joseph John Sumakeris , Hudson McDonald Hobgood , Michael James Paisley , Jason Ronald Jenny , Calvin H. Carter, Jr. , Valeri Fedorovich Tsvetkov
IPC分类号： C30B29/36 , C30B31/20 , H01L21/04 , H01L29/24 , H01L29/739 , H01L29/78 , H01L29/808 , H01L29/861 , H01L29/868 , H01L31/0312 , H01L4/00
CPC分类号： H01L29/7813 , C30B29/36 , C30B31/20 , H01L21/0455 , H01L29/6606 , H01L29/66068 , H01L29/8083 , H01L29/861 , H01L29/868
摘要： Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×1015 cm−3. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.

10. 发明授权

US06797069B2 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers 有权
标题翻译：气体驱动的行星旋转装置和形成碳化硅层的方法
公开(公告)号：US06797069B2
公开(公告)日：2004-09-28
申请号：US10117858
申请日：2002-04-08
申请人： Michael James Paisley , Joseph John Sumakeris
发明人： Michael James Paisley , Joseph John Sumakeris
IPC分类号： H01L21306
CPC分类号： C30B25/12 , C23C16/4584 , H01L21/6838
摘要： A gas driven rotation apparatus for use with a flow of drive gas includes a base member having an upper surface, a main platter overlying the upper surface of the base member, and a satellite platter overlying the main platter. The apparatus is adapted to direct the flow of drive gas between the upper surface of the base member and the main platter such that the main platter is rotated relative to the base member by the flow of drive gas. At least a portion of the flow of drive gas is directed from between the upper surface of the base member and the main platter to between the main platter and the satellite platter such that the satellite platter is rotated relative to the main platter by the at least a portion of the flow of drive gas.
摘要翻译：与驱动气体流动一起使用的气体驱动旋转装置包括具有上表面的基部构件，覆盖在基座构件的上表面上的主盘，以及覆盖在主盘上的卫星盘。该装置适于引导驱动气体在基体的上表面和主盘之间的流动，使得主盘片通过驱动气体的流动相对于基座构件旋转。驱动气体流的至少一部分从基部构件的上表面和主盘之间引导到主盘和卫星盘之间，使得卫星盘相对于主盘旋转至少驱动气体流的一部分。

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