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1. 发明申请

US20100330773A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20100330773A1
公开(公告)日：2010-12-30
申请号：US12822304
申请日：2010-06-24
申请人： Shin HIYAMA
发明人： Shin HIYAMA
IPC分类号： H01L21/31 , B05C11/10
CPC分类号： H01L21/31612 , C23C16/045 , C23C16/401 , C23C16/4405 , C23C16/482 , C23C16/488 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/02277
摘要： Provided is a substrate processing method, which can fill an insulating film in a groove having a small width with a high aspect ratio and improve the productivity. The substrate processing method comprises loading a substrate into a processing chamber, supplying silicon compound gas including carbon and hydrogen into the processing chamber, irradiating ultraviolet light on the silicon compound gas supplied into the processing chamber to process the substrate, unloading the processed substrate from the processing chamber, and processing the inside of the processing chamber with excited oxygen-containing gas. Accordingly, an adhered matter generated when irradiating the ultraviolet light on the silicon compound gas to process the substrate and adhered to a structure such as an inner wall of the processing chamber can be processed with the excited oxygen-containing gas to modify it.
摘要翻译：提供一种基板处理方法，其可以在具有高纵横比的宽度小的凹槽中填充绝缘膜，并提高生产率。基板处理方法包括将基板加载到处理室中，将包含碳和氢的硅化合物气体供应到处理室中，向供应到处理室中的硅化合物气体照射紫外光以处理基板，将处理的基板从处理室，并用激发的含氧气体处理处理室的内部。因此，可以用被激发的含氧气体处理在硅化合物气体上照射紫外线以处理基板并粘附到诸如处理室的内壁的结构的结构时产生的附着物质以进行改性。

2. 发明申请

US20060286776A1 METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS 有权
公开(公告)号：US20060286776A1
公开(公告)日：2006-12-21
申请号：US11425346
申请日：2006-06-20
申请人： Joseph Ranish , Kaushal Singh
发明人： Joseph Ranish , Kaushal Singh
IPC分类号： H01L21/20
CPC分类号： C23C16/308 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52 , C30B25/02 , C30B29/06 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02219 , H01L21/02277 , H01L21/02301 , H01L21/0231 , H01L21/02348 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L21/3121 , H01L21/3143 , H01L21/31612 , H01L21/3185 , Y10S438/905
摘要： Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

3. 发明授权

US07118781B1 Methods for controlling formation of deposits in a deposition system and deposition methods including the same 有权
标题翻译：用于控制沉积系统中沉积物形成的方法和包括其的沉积方法
公开(公告)号：US07118781B1
公开(公告)日：2006-10-10
申请号：US10414787
申请日：2003-04-16
申请人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
发明人： Joseph John Sumakeris , Michael James Paisley , Michael John O'Loughlin
IPC分类号： C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/455 , C23C16/488
摘要： A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas.
摘要翻译：一种用于控制用于在衬底上沉积膜的沉积系统中的寄生沉积物的方法，所述沉积系统限定用于接收衬底并在反应室中包括工艺气体和与反应室邻接的内表面的反应室，包括流动在所述内表面和所述处理气体的至少一部分之间形成缓冲气体，以形成阻气层，使得所述阻气层抑制所述内表面和所述工艺气体的组分之间的接触。

4. 发明授权

US06301434B1 Apparatus and method for CVD and thermal processing of semiconductor substrates 失效
标题翻译：用于半导体衬底的CVD和热处理的装置和方法
公开(公告)号：US06301434B1
公开(公告)日：2001-10-09
申请号：US09274815
申请日：1999-03-22
申请人： James McDiarmid , Kristian E. Johnsgard , Steven E. Parks , Mark W. Johnsgard
发明人： James McDiarmid , Kristian E. Johnsgard , Steven E. Parks , Mark W. Johnsgard
IPC分类号： F26B1900
CPC分类号： H01L21/67115 , C23C16/4404 , C23C16/481 , C23C16/488
摘要： A thermal processing system and method for processing a semiconductor substrate. A lamp system radiates through a window to heat the substrate. A dual gas manifold provides purge gas through a top showerhead to prevent deposits on the window and provides gas through a lower showerhead to deposit a material on the substrate. A thin support and a radiative cavity with thin radiation shields is used to support and insulate the substrate. A peripheral heater also heats the edges to enhance uniformity. An opaque quartz liner is used to reduce contaminants and undesired deposits and simplify cleaning.
摘要翻译：一种用于处理半导体衬底的热处理系统和方法。灯系统通过窗口辐射以加热基板。双气体歧管通过顶部淋浴头提供净化气体，以防止窗户上的沉积物，并通过下部喷头提供气体以将材料沉积在基底上。使用薄支撑和具有薄辐射屏蔽的辐射腔来支撑和绝缘基板。外围加热器还加热边缘以增强均匀性。使用不透明的石英衬垫来减少污染物和不期望的沉积物并简化清洁。

5. 发明授权

US5855970A Method of forming a film on a substrate 失效
标题翻译：在基材上形成膜的方法
公开(公告)号：US5855970A
公开(公告)日：1999-01-05
申请号：US769115
申请日：1996-12-18
申请人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
发明人： Takashi Inushima , Shigenori Hayashi , Toru Takayama , Masakazu Odaka , Naoki Hirose
IPC分类号： C23C16/02 , C23C16/40 , C23C16/44 , C23C16/48 , C23C16/517 , C23C16/56 , H01L21/316 , H05H1/24
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , C23C16/4405 , C23C16/482 , C23C16/487 , C23C16/488 , C23C16/517 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02274 , H01L21/02277 , H01L21/31608 , H01L21/31612
摘要： An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
摘要翻译：示出了用于沉积均匀膜的改进的CVD装置。该装置包括反应室，衬底保持器和用于光CVD的多个光源或用于等离子体CVD的一对电极。衬底保持器是由光源包围的圆柱形手推车，并且通过驱动装置绕其轴线旋转。利用这种结构，安装在推车和周围环境上的基板可以通过等离子体的光均匀地通过待涂覆的表面来激励。

6. 发明授权

US5527417A Photo-assisted CVD apparatus 失效
标题翻译：光辅助CVD装置
公开(公告)号：US5527417A
公开(公告)日：1996-06-18
申请号：US446290
申请日：1995-05-22
申请人： Yoshinori Iida , Akihiko Furukawa , Tetsuya Yamaguchi , Michio Sasaki , Hisanori Ihara , Hidetoshi Nozaki , Takaaki Kamimura
发明人： Yoshinori Iida , Akihiko Furukawa , Tetsuya Yamaguchi , Michio Sasaki , Hisanori Ihara , Hidetoshi Nozaki , Takaaki Kamimura
IPC分类号： H01L21/205 , C23C16/44 , C23C16/48 , C23F1/02
CPC分类号： C23C16/4405 , C23C16/482 , C23C16/488
摘要： A photo-assisted CVD apparatus including a reaction chamber for storing a substrate, an inlet port for feeding a source gas into the reaction chamber, a light source for radiating light on the source gas fed into the reaction chamber to decompose the source gas upon radiating the light, thereby depositing a film on the substrate, an inlet port for supplying an etching gas into the reaction chamber, and a discharge electrode, arranged above the substrate and having a configuration, surrounding a space above the substrate, for exciting the etching gas.
摘要翻译：一种光辅助CVD装置，包括用于存储基板的反应室，用于将源气体供给到反应室中的入口端口，用于在进入反应室的源气体上照射光的光源，以在辐射时分解源气体由此在基板上沉积膜，将用于向反应室供给蚀刻气体的入口端口和放电电极，该放电电极布置在基板上方并且具有围绕基板上方的空间的激励蚀刻气体。

7. 发明授权

US5215588A Photo-CVD system 失效
标题翻译：光CVD系统
公开(公告)号：US5215588A
公开(公告)日：1993-06-01
申请号：US822361
申请日：1992-01-17
申请人： Ji H. Rhieu
发明人： Ji H. Rhieu
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C23C16/48
CPC分类号： C23C16/45519 , C23C16/482 , C23C16/488
摘要： A photo-assisted chemical vapor deposition system includes a reaction chamber, a susceptor in the reaction chamber supporting a wafer, a source for introducing reactant gas into the reaction chamber through an inlet port, and a cover positioned in sealed relationship to the housing and partially bounding the reaction chamber, the cover including a plurality of elongated light pipe openings each having a length comparable to the thickness of a boundary layer of the reactant gas and a diameter-to-length ratio small enough to maintain one-dimensional purge gas flow through the light pipe openings. A plurality of transparent windows are disposed in sealed relationship with the cover and bound an outer end of each of the light pipe openings. Ultraviolet light is introduced through the light pipe openings, which also provide a thick gas layer through which reactant species of the reactant gas must diffuse to reach the window surface. Inert purging gas having a velocity large enough to reduce the concentration of the reactant gas is introduced into the light pipe openings and flows out of the open ends thereof, impeding diffusion of reactant gas molecules toward the windows. Clouding of the windows is thereby effectively avoided.
摘要翻译：光辅助化学气相沉积系统包括反应室，支撑晶片的反应室中的基座，通过入口将反应气体引入反应室的源和与壳体密封关系定位的部分盖住反应室，盖子包括多个细长的光管开口，每个细长的光管开口的长度与反应物气体的边界层的厚度相当，并且直径长度比足够小，以保持一维吹扫气体流过光管开口。多个透明窗被设置成与盖密封并且限定每个光管开口的外端。通过光管开口引入紫外光，这也提供了一个较厚的气体层，反应物气体的反应物必须通过该气体扩散到达窗口表面。具有足够大的速度以减少反应气体的浓度的惰性吹扫气体被引入光管开口并从其开口端流出，阻止反应气体分子向窗口的扩散。从而有效地避免了窗户的混浊。

8. 发明授权

US4654226A Apparatus and method for photochemical vapor deposition 失效
标题翻译：光化学气相沉积的装置和方法
公开(公告)号：US4654226A
公开(公告)日：1987-03-31
申请号：US835331
申请日：1986-03-03
申请人： Scott C. Jackson , Richard E. Rocheleau
发明人： Scott C. Jackson , Richard E. Rocheleau
IPC分类号： H01L21/205 , C23C16/48 , H01L21/263 , H01L21/31 , B05D3/06
CPC分类号： C23C16/488
摘要： A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.
摘要翻译：光化学气相沉积设备包括反应器壳体，其在壳体中的反应室上方的一个壁中具有窗口。透明的窗帘将反应室分成反应区和冲洗区。至少一个基板安装在与窗口光连通的反应区域中，使得紫外线辐射可以穿过窗口进入反应区域。窗户被流经冲洗区的气体保持清澈。

9. 发明授权

US4435445A Photo-assisted CVD 失效
标题翻译：照相辅助CVD
公开(公告)号：US4435445A
公开(公告)日：1984-03-06
申请号：US377738
申请日：1982-05-13
申请人： David D. Allred , Lee Walter , Jaime M. Reyes , Stanford R. Ovshinsky
发明人： David D. Allred , Lee Walter , Jaime M. Reyes , Stanford R. Ovshinsky
IPC分类号： C23C16/04 , C23C16/48 , G03G5/08 , C23C13/00
CPC分类号： C23C16/488 , C23C16/047 , C23C16/482
摘要： A process and apparatus for depositing a film from a gas involves introducing the gas to a deposition environment containing a substrate, heating the substrate, and irradiating the gas with radiation having a preselected energy spectrum, such that a film is deposited onto the substrate. In a preferred embodiment, the energy spectrum of the radiation is below or approximately equal to that required to photochemically decompose the gas. In another embodiment, the gas is irradiated through a transparent member exposed at a first surface thereof to the deposition environment, and a flow of substantially inert gaseous material is passed along the first surface to minimize deposition thereon.
摘要翻译：用于从气体沉积膜的方法和装置包括将气体引入到包含基底的沉积环境中，加热基底，并用具有预选能谱的辐射照射气体，使得膜沉积到基底上。在优选实施例中，辐射的能谱低于或近似等于光化学分解气体所需的能谱。在另一个实施方案中，通过在其第一表面暴露于沉积环境的透明构件照射气体，并且沿着第一表面通过基本惰性的气态物质的流动，以使其上的沉积最小化。

10. 发明申请

US20160258057A1 CLEAN RESISTANT WINDOWS FOR ULTRAVIOLET THERMAL PROCESSING 审中-公开
标题翻译：用于超紫外线热处理的清洁窗口
公开(公告)号：US20160258057A1
公开(公告)日：2016-09-08
申请号：US14641179
申请日：2015-03-06
申请人： Lam Research Corporation
发明人： James Lee , George Andrew Antonelli , Kevin M. McLaughlin , Andrew John McKerrow , Curtis Bailey , Alexander R. Fox , Stephen Lau , Eugene Smargiassi , Casey Holder , Troy Daniel Ribaudo , Xiaolan Chen
IPC分类号： C23C16/44 , C23C16/52 , C23C16/48 , H01L21/67
CPC分类号： C23C16/488 , B08B7/0057 , B08B9/00 , C23C16/4405 , C23C16/4408 , H01L21/67115 , H01L21/6719 , H01L21/68764 , H01L21/68771
摘要： Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.
摘要翻译：提供了用于清洁半导体处理室的设备和方法。半导体处理室可以包括UV辐射源，衬底保持器和UV透射窗。 UV透射窗可以包括一个或多个窗格。 UV透射窗的一个或多个窗可以与含氟化学物质不反应。在多窗格窗口中，可以在窗口之间的间隙中形成净化气体流动路径。净化气体可以流过净化气体流动路径，以防止室内使用的工艺气体到达UV透射窗的一个或多个窗格。

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