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1. 发明授权

US11451161B2 Power switcher, power rectifier, and power converter including cascode-connected transistors 有权
公开(公告)号：US11451161B2
公开(公告)日：2022-09-20
申请号：US17013981
申请日：2020-09-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yusuke Hayashi , Kazuto Takao , Kentaro Ikeda
IPC分类号： H02M3/158 , H02M1/00 , H02M3/335 , H02M3/28 , H02M7/219 , H02M7/217 , H02M1/08 , H03K17/687 , H02M1/088
摘要： A power switcher includes a first normally-off transistor that switches between interrupting and not interrupting a current path between first and second electrodes according to a drive voltage input to a first control electrode, a second normally-on transistor cascode-connected to the first transistor and including a second control electrode to which the second electrode of the first transistor is connected, a control voltage generator that generates a control voltage in accordance with a voltage between the first and second electrodes of the first transistor, and a drive voltage generator that generates a drive voltage equal to or lower than a withstand voltage of the first transistor in accordance with the control voltage.

2. 发明授权

US10958155B2 Semiconductor device, power conversion device, driving device, vehicle, and elevator 有权
公开(公告)号：US10958155B2
公开(公告)日：2021-03-23
申请号：US16111446
申请日：2018-08-24
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro Ikeda
IPC分类号： H02M1/32 , H02M7/5387 , H02P27/06 , B66B11/04 , H02H9/04 , B61C3/00 , B60R16/023
摘要： A semiconductor device according to an embodiment is a semiconductor device including: a first diode having a first anode and a first cathode, the first anode for electrically connecting to one of a first electrode and a second electrode of a semiconductor element including the first electrode, the second electrode, and a gate electrode; a first capacitor having a first end electrically connected to the first cathode, and a first other end; a bias element having a first bias element end electrically connected to the first cathode and the first end, and a second bias element end for electrically connecting to a positive electrode of a direct-current power supply including the positive electrode and a negative electrode; a second diode having a second anode and a second cathode, the second anode electrically connected to the first other end; a second capacitor having a second end and a second other end, the second end electrically connected to the second cathode; a switch electrically connected in parallel to the second capacitor between the second end and the second other end; an analog-digital converter or sample-and-hold circuit electrically connected to the second cathode and the second end; and a third diode having a third anode and a third cathode, the third anode electrically connected to the second other end, and the third cathode electrically connected to the first other end and the second anode.

3. 发明申请

US20190164943A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190164943A1
公开(公告)日：2019-05-30
申请号：US15909552
申请日：2018-03-01
申请人： Kabushiki Kaisha Toshiba
发明人： Masahiro KOYAMA , Kentaro Ikeda , Kazulo Takao
IPC分类号： H01L25/11 , H01L25/16 , H01L25/18 , H01L23/00
摘要： According to one embodiment, a semiconductor device includes a first transistor being normally-off, a second transistor being normally-on, and a first conductive member. The first transistor includes a first gate, a first source, a first drain, and a first semiconductor member. The first semiconductor member is provided between the first gate and the first drain and between the first source and the first drain. The second transistor includes a second gate, a second source, a second drain, and a second semiconductor member. An orientation from the first semiconductor member toward the first drain is the same as an orientation from the second semiconductor member toward the second gate, toward the second source, and toward the second drain. The first conductive member electrically connects the first drain and the second source.

4. 发明授权

US10109715B2 Semiconductor device 有权
公开(公告)号：US10109715B2
公开(公告)日：2018-10-23
申请号：US15392210
申请日：2016-12-28
申请人： Kabushiki Kaisha Toshiba
发明人： Yosuke Kajiwara , Kentaro Ikeda , Hisashi Saito , Masahiko Kuraguchi
IPC分类号： H01L27/088 , H01L29/417 , H01L29/778 , H01L23/535 , H01L29/423 , H01L29/20 , H01L29/205
摘要： A semiconductor device according to an embodiment includes: a substrate having a first plane and a second plane provided on the opposite side of the first plane; a first nitride semiconductor layer provided on the first plane; source electrodes provided on the first nitride semiconductor layer; drain electrodes provided on the first nitride semiconductor layer, each of the drain electrodes provided between the source electrodes; gate electrodes provided on the first nitride semiconductor layer, each of the gate electrodes provided between each of the source electrodes and each of the drain electrodes; a first wire provided on the second plane and electrically connected to the source electrodes; a second wire electrically connected to the drain electrodes; a third wire provided on the second plane and electrically connected to the gate electrodes; and an insulating interlayer provided between the first nitride semiconductor layer and the second wire.

5. 发明授权

US09812411B2 Semiconductor device, inverter circuit, and drive device 有权
公开(公告)号：US09812411B2
公开(公告)日：2017-11-07
申请号：US15235404
申请日：2016-08-12
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro Ikeda , Kazuto Takao , Ryosuke Iijima
IPC分类号： H01L23/64 , H01L29/16 , H01L29/78 , H01L49/02 , H01L23/373 , H01L23/58 , H01L23/427 , H01L23/62 , H02M7/00
CPC分类号： H01L23/645 , H01L23/3735 , H01L23/427 , H01L23/585 , H01L23/62 , H01L25/072 , H01L25/074 , H01L28/40 , H01L29/1608 , H01L29/7805 , H02M7/003
摘要： A semiconductor device of an embodiment includes a first electrode, a second electrode facing the first electrode, an alternating-current electrode, a first switching element provided between the first electrode and the alternating-current electrode, and a second switching element provided between the second electrode and the alternating-current electrode. The first switching element and the second switching element are electrically connected in series between the first electrode and the second electrode, and the alternating-current electrode is electrically connected between the first switching element and the second switching element.

6. 发明授权

US09142544B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09142544B2
公开(公告)日：2015-09-22
申请号：US14183737
申请日：2014-02-19
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro Ikeda
IPC分类号： H01L29/778 , H01L27/02 , H01L25/18 , H03K17/0814 , H03K17/12
CPC分类号： H01L27/0255 , H01L23/49838 , H01L25/18 , H01L27/0629 , H01L28/20 , H01L28/40 , H01L29/16 , H01L29/2003 , H01L29/7787 , H01L29/7827 , H01L29/866 , H01L29/872 , H01L2224/0603 , H01L2224/48091 , H01L2224/48247 , H01L2224/48464 , H01L2224/4917 , H01L2924/12032 , H01L2924/13091 , H01L2924/19105 , H01L2924/19107 , H03K17/08148 , H03K17/12 , H03K17/127 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device of an embodiment includes a normally-off transistor having a first source electrically connected to a source terminal, a first drain, and a first gate electrically connected to a gate terminal, a normally-on transistor having a second source electrically connected to the first drain, a second drain electrically connected to a drain terminal, and a second gate, a capacitor having one end electrically connected to the gate terminal and the other end electrically connected to the second gate; and a first diode having a first anode electrically connected to the capacitor and the second gate and a first cathode electrically connected to the first source.
摘要翻译：实施例的半导体器件包括常闭晶体管，其具有电连接到源极端子，第一漏极和电连接到栅极端子的第一栅极的第一源极，具有第二源极的常开晶体管，电连接到第一漏极，与漏极端子电连接的第二漏极和第二栅极;电容器，其一端电连接到栅极端子，另一端电连接到第二栅极; 以及第一二极管，具有电连接到电容器和第二栅极的第一阳极和与第一源电连接的第一阴极。

7. 发明申请

US20210175339A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20210175339A1
公开(公告)日：2021-06-10
申请号：US17017332
申请日：2020-09-10
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tomoaki INOKUCHI , Hiro Gangi , Yusuke Kobayashi , Kentaro Ikeda , Tatsunori Sakano , Ryosuke Iijima
IPC分类号： H01L29/423 , H01L29/40 , H01L29/78 , H01L21/18
摘要： According to one embodiment, a semiconductor device includes first, and second conductive members, first, second, and third semiconductor regions, and an insulating part. A direction from the first conductive member toward the second conductive member is along a first direction. The first semiconductor region includes first and second partial regions. A second direction from the first partial region toward the second partial region crosses the first direction. The first conductive member is between the first partial region and the second conductive member. A direction from the second partial region toward the second semiconductor region is along the first direction. A direction from the second conductive member toward the second semiconductor region is along the second direction. The third semiconductor region is between the second partial region and the second semiconductor region. The insulating part includes a first insulating region, a second insulating region, and a third insulating region.

8. 发明授权

US10483839B2 Semiconductor device, power conversion device, driving device, vehicle, and elevator 有权
公开(公告)号：US10483839B2
公开(公告)日：2019-11-19
申请号：US15896563
申请日：2018-02-14
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro Ikeda
IPC分类号： H02M1/32 , H02M7/537 , G01R19/00 , H02M1/34
摘要： A semiconductor device according to an embodiment includes: a first capacitor having a first end and a first the other end, the first end for electrically connecting to at least one of a first electrode and a second electrode of a transistor having the first electrode, the second electrode, and a gate electrode; a first diode having a first anode and a first cathode, the first anode electrically connected to the first the other end; a second capacitor having a second end and a second the other end, the second end electrically connected to the first cathode; a sample and hold circuit electrically connected to the first cathode and the second end; a switch electrically connected in parallel with the second capacitor between the second end and the second the other end; and a second diode having a second anode and a second cathode, the second cathode electrically connected to the first the other end and the first anode.

9. 发明授权

US10263538B2 Semiconductor device and power conversion device 有权
公开(公告)号：US10263538B2
公开(公告)日：2019-04-16
申请号：US15424122
申请日：2017-02-03
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kentaro Ikeda
IPC分类号： H03K3/00 , H02M7/537 , H01L29/78 , H03K17/16 , H01L27/06 , H01L49/02 , H01L29/06 , H01L29/16 , H01L29/20 , H01L29/872
摘要： A semiconductor device according to an embodiment includes a transistor including a first electrode, a second electrode, and a gate electrode, an electric resistance being electrically connected to the gate electrode, a diode including an anode being electrically connected to the first electrode and a cathode being electrically connected between the electric resistance and the gate electrode, and a capacitor being connected in parallel with the electric resistance.

10. 发明授权

US09621153B2 Gate control device, semiconductor device, and method for controlling semiconductor device 有权
公开(公告)号：US09621153B2
公开(公告)日：2017-04-11
申请号：US14824228
申请日：2015-08-12
申请人： Kabushiki Kaisha Toshiba
发明人： Kentaro Ikeda , Masahiko Kuraguchi
IPC分类号： H03B1/00 , H03K3/01 , H03K17/687 , H01L29/778 , H01L29/20 , H03K17/0412 , H03K17/06 , H03K17/16 , H01L29/10
CPC分类号： H03K17/687 , H01L29/1066 , H01L29/2003 , H01L29/7786 , H01L29/7787 , H03K17/04123 , H03K17/063 , H03K17/163 , H03K2217/0036
摘要： A semiconductor device according to an embodiments controls a gate voltage to be applied to a gate electrode of a junction field effect transistor including a source electrode, a drain electrode, and the gate electrode, the transistor having a first threshold voltage at which the transistor is turned on, and a second threshold at which conductivity modulation occurs in the transistor so as to make the gate voltage equal to or higher than the second threshold voltage when a forward current in a direction from the drain electrode toward the source electrode flows, and so as to make the time variation in gate voltage have a point from which the rate of the time variation starts decreasing at a voltage between the second threshold voltage and the first threshold voltage when the forward current to be shut down.

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