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    • 3. 发明申请
    • LOAD DRIVE CIRCUIT
    • 负载驱动电路
    • US20160191045A1
    • 2016-06-30
    • US14972803
    • 2015-12-17
    • SANKEN ELECTRIC CO., LTD.
    • Yuta OZONO
    • H03K17/56H01F7/06
    • H03K17/56H01F7/064H02H11/002H02M2001/0025H03K17/08148H03K2217/0081
    • A switch electrically connected to a first terminal and a second terminal. A first comparator detects a load open state where the switch is off and a load is not connected to the second terminal. Upon detecting, a clamp circuit clamps the voltage of the second terminal to a clamp voltage higher than a first reference voltage and lower than an input voltage. A second comparator detects an output-to-supply short circuit state where the switch is off and the second terminal is connected to the power supply. A capacitor with one terminal connected to the second terminal and another terminal connected to a third terminal. A bootstrap circuit supplies a charge current to the third terminal at a constant voltage. A clamp voltage rise prevention circuit prevents the clamp voltage of the clamp circuit from rising, when the first comparator detects the load open state.
    • 电连接到第一端子和第二端子的开关。 第一比较器检测开关断开并且负载未连接到第二端子的负载打开状态。 检测时,钳位电路将第二端子的电压钳位到高于第一参考电压并低于输入电压的钳位电压。 第二比较器检测开关断开并且第二端子连接到电源的输出电源短路状态。 一个电容器,其一个端子连接到第二端子,另一个端子连接到第三端子。 自举电路以恒定电压向第三端提供充电电流。 当第一比较器检测到负载打开状态时,钳位电压上升防止电路防止钳位电路的钳位电压上升。
    • 7. 发明授权
    • Inverter circuit
    • 逆变电路
    • US07924064B2
    • 2011-04-12
    • US12076580
    • 2008-03-20
    • Toru IwagamiMamoru Seo
    • Toru IwagamiMamoru Seo
    • H03B1/00
    • H03K17/08148H02M7/538Y10S315/07
    • An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).
    • 逆变器电路包括IGBT(3)和串联连接在电源电位(Vcc)和GND电位之间的IGBT(4)和用于分别控制IGBT的驱动的HVIC(1)和LVIC(2) (3)和(4)。 逆变器电路还包括电容器(5),二极管(6)和电阻器(7)。 电容器(5)连接在端子(VS)和GND电位之间。 二极管(6)具有与端子(VS)和GND电位之间的电容器(5)的串联连接,具有正向电流从GND电位流到端子(VS)的极性。 电阻器(7)与电容器(5)并联连接。
    • 8. 发明申请
    • CONTROL OF POWER SEMICONDUCTOR DEVICES
    • 功率半导体器件的控制
    • US20100060326A1
    • 2010-03-11
    • US12441128
    • 2007-09-10
    • Patrick Reginald PalmerYalan WangAngus Toby Bryant
    • Patrick Reginald PalmerYalan WangAngus Toby Bryant
    • H03K17/082
    • H03K17/168H03K17/08148H03K17/0828H03K17/166
    • This invention relates to a control method and a circuit for MOS-gated power semiconductor switching devices such as IGBTs or MOSFETs, which allows control and optimisition of the current and voltage commutation of a power semiconductor switching device and freewheel diode pair in the basic half-bridge circuit found in a wide range of equipment. The method comprises the stages of: applying, upon receipt of a switch-on command signal, a voltage function to the control terminal or the gate of the power semiconductor switching device that allows a regulated current rise in the device whilst maintaining the voltage across the device falling at a predetermined rate; and at the instant when the voltage across the diode begins to change from the on-state towards the off-state level, applying a voltage function to the control terminal or the gate of the power semiconductor switching device to enable the voltage falling across the power semiconductor switching device to track the voltage falling across the diode in order to ensure a fast and controlled completion of the switching operation without diode reverse voltage overshoot. The gate drive automatically modifies the voltage function according to the working condition thereby accounting for the actual operating conditions.
    • 本发明涉及用于诸如IGBT或MOSFET之类的MOS门控功率半导体开关器件的控制方法和电路,其允许控制和优化基本半开关中的功率半导体开关器件和续流二极管对的电流和电压换向, 桥梁电路发现在广泛的设备。 该方法包括以下阶段:在接收到接通命令信号时,将电压功能应用于功率半导体开关器件的控制端或栅极,其允许器件中的稳压电流上升,同时保持跨越 设备以预定速率下降; 并且在二极管两端的电压开始从导通状态向断开状态电平变化的瞬间,向功率半导体开关器件的控制端或栅极施加电压功能以使能够跨越功率的电压 半导体开关器件跟踪二极管上的电压,以确保快速和可控的完成开关操作,无二极管反向电压过冲。 栅极驱动器根据工作条件自动修改电压功能,从而计算实际工作条件。
    • 9. 发明申请
    • Inverter circuit
    • 逆变电路
    • US20090180228A1
    • 2009-07-16
    • US12076580
    • 2008-03-20
    • Toru IwagamiMamoru Seo
    • Toru IwagamiMamoru Seo
    • H02H9/04
    • H03K17/08148H02M7/538Y10S315/07
    • An inverter circuit includes an IGBT (3) and an IGBT (4) connected in series between a power supply potential (Vcc) and a GND potential, and an HVIC (1) and an LVIC (2) for respectively controlling actuation of the IGBTs (3) and (4). The inverter circuit also includes a capacitor (5), a diode (6), and a resistor (7). The capacitor (5) is connected between a terminal (VS) and the GND potential. The diode (6) has a series connection to the capacitor (5) between the terminal (VS) and the GND potential, with such a polarity that a forward current flows from the GND potential to the terminal (VS). The resistor (7) is connected in parallel to the capacitor (5).
    • 逆变器电路包括IGBT(3)和串联连接在电源电位(Vcc)和GND电位之间的IGBT(4)和用于分别控制IGBT的驱动的HVIC(1)和LVIC(2) (3)和(4)。 逆变器电路还包括电容器(5),二极管(6)和电阻器(7)。 电容器(5)连接在端子(VS)和GND电位之间。 二极管(6)具有与端子(VS)和GND电位之间的电容器(5)的串联连接,具有正向电流从GND电位流到端子(VS)的极性。 电阻器(7)与电容器(5)并联连接。