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2. 发明授权

US09478301B1 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US09478301B1
公开(公告)日：2016-10-25
申请号：US15066718
申请日：2016-03-10
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kiichi Tachi , Masanobu Shirakawa , Masaki Yoshimura , Marie Takada , Yoshikazu Harada
IPC分类号： G11C11/34 , G11C16/26 , G11C16/04 , G11C16/14
CPC分类号： G11C16/26 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/3427 , G11C29/021 , G11C29/028
摘要： A semiconductor memory device according to an embodiment includes a control circuit, during data write to a memory cell, sequentially executing: an erasing stage in which a threshold value of the memory cell is transitioned into an erase distribution; a preliminary programming stage in which the threshold value is transitioned into a temporal distribution corresponding to write data; and a main programming stage in which the threshold value is transitioned into a program distribution corresponding to the write data, and the control circuit executing a main reading stage, during the data read to a first memory cell, which includes a main reading step of adjusting a read pass voltage to be applied to a neighboring word line based on a magnitude of a threshold value of the neighboring memory cell, and reading whether the first memory cell is an erase level.
摘要翻译：根据实施例的半导体存储器件包括控制电路，在对存储器单元的数据写入期间，顺次地执行：擦除阶段，其中存储单元的阈值转变为擦除分布; 初步编程阶段，其中阈值被转换成对应于写入数据的时间分布; 以及主编程阶段，其中在对第一存储单元的数据读取期间，阈值转变为对应于写入数据的程序分布，以及控制电路执行主读取级，其包括主要读取步骤基于相邻存储单元的阈值的大小，读取相邻字线的读通过电压，以及读取第一存储单元是否为擦除电平。

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