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1. 发明申请

US20160133293A1 MAGNETIC RECORDING AND REPRODUCING DEVICE AND MAGNETIC RECORDING AND REPRODUCING METHOD 有权
标题翻译：磁记录和再现设备及磁记录和再现方法
公开(公告)号：US20160133293A1
公开(公告)日：2016-05-12
申请号：US14887998
申请日：2015-10-20
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kenichiro YAMADA , Masayuki TAKAGISHI , Tomoyuki MAEDA , Yousuke ISOWAKI , Naoyuki NARITA , Shuichi MURAKAMI
IPC分类号： G11B20/12 , G11B5/012
CPC分类号： G11B20/1217 , G11B5/012 , G11B5/02 , G11B5/82 , G11B2020/1238
摘要： According to one embodiment, a magnetic recording and reproducing device includes a magnetic recording medium, a recording unit, and a reproducing unit. The magnetic recording medium includes a first track including first and second sub-tracks extending in a first direction. The second sub-track is arranged with the first sub-track in a second direction intersecting the first direction. The recording unit records information in the first and second sub-tracks. The reproducing unit reproduces the information recorded in the first and second sub-tracks while opposing the first, second sub-tracks, and a boundary between the first and second sub-tracks. The first sub-track includes first magnetic recording components including first and second components. The second sub-track includes second magnetic recording components including third and fourth components. A first recording symbol is formed of the first and third components. A second recording symbol is formed of the second and fourth components.
摘要翻译：根据一个实施例，磁记录和再现装置包括磁记录介质，记录单元和再现单元。磁记录介质包括第一轨道，该第一轨道包括沿第一方向延伸的第一和第二子轨道。第二子轨道与第一子轨道沿与第一方向相交的第二方向布置。记录单元将信息记录在第一和第二子轨道中。再现单元再现与第一和第二子轨道相对的第一和第二子轨道中记录的信息，以及第一和第二子轨道之间的边界。第一子轨道包括包括第一和第二分量的第一磁记录部件。第二子轨道包括第二和第四分量的第二磁记录组件。第一记录符号由第一和第三分量形成。第二记录符号由第二和第四分量形成。

2. 发明申请

US20160027457A1 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC HEAD ASSEMBLY, MAGNETIC RECORDING AND REPRODUCING DEVICE, AND METHOD FOR MANUFACTURING MAGNETORESISTANCE EFFECT ELEMENT 审中-公开
公开(公告)号：US20160027457A1
公开(公告)日：2016-01-28
申请号：US14875522
申请日：2015-10-05
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yousuke ISOWAKI , Satoshi SHIROTORI , Masayuki TAKAGISHI , Hitoshi IWASAKI
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/1272 , G11B5/3163 , G11B5/3932 , G11B5/398 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49826
摘要： According to one embodiment, a magnetoresistance effect element includes first and second shields, first and second side magnetic units, a stacked body, and a hard bias unit. The first side magnetic unit includes a first soft magnetic layer, a first nonmagnetic intermediate layer, and a second soft magnetic layer. The second side magnetic unit includes a third soft magnetic layer, a second nonmagnetic intermediate layer, and a fourth soft magnetic layer. The stacked body includes a fifth ferromagnetic layer, a third nonmagnetic intermediate layer, and a sixth ferromagnetic layer. The hard bias unit is provided between the first and second shields. A first distance between the first and fifth magnetic layers is shorter than a second distance between the second and sixth magnetic layers. A third distance between the third and fifth magnetic layers is shorter than a fourth distance between the fourth and sixth magnetic layers.

3. 发明申请

US20140233135A1 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC HEAD ASSEMBLY, AND MAGNETIC RECORDING AND REPRODUCING DEVICE 有权
标题翻译：磁阻效应元件，磁头，磁头组件和磁记录和再现装置
公开(公告)号：US20140233135A1
公开(公告)日：2014-08-21
申请号：US14182540
申请日：2014-02-18
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Susumu HASHIMOTO , Masayuki TAKAGISHI , Shuichi MURAKAMI , Yousuke ISOWAKI , Naoki HASE , Hitoshi IWASAKI
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/398 , H01F10/325
摘要： According to one embodiment, a magnetoresistance effect element includes first and second shields, a stacked body and a hard bias unit. The stacked body includes first and second magnetic layers, an intermediate layer and a first Ru layer. A magnetization of the first magnetic layer is changeable. A magnetization of the second magnetic layer is changeable. The intermediate layer is nonmagnetic. The first Ru layer is provided between the first shield and the first magnetic layer. A thickness of the first Ru layer is not less than 1.5 nanometers and not more than 2.5 nanometers. The hard bias unit is provided between the first shield and the second shield. A first direction from the first shield toward the second shield intersects a second direction from the stacked body toward the hard bias unit.
摘要翻译：根据一个实施例，磁阻效应元件包括第一和第二屏蔽层，堆叠体和硬偏置单元。层叠体包括第一和第二磁性层，中间层和第一Ru层。第一磁性层的磁化是可变化的。第二磁性层的磁化是可变化的。中间层是非磁性的。第一Ru层设置在第一屏蔽和第一磁性层之间。第一Ru层的厚度不小于1.5纳米且不大于2.5纳米。硬偏置单元设置在第一屏蔽和第二屏蔽之间。从第一屏蔽朝向第二屏蔽的第一方向与从层叠体朝向硬偏压单元的第二方向相交。

4. 发明申请

US20140211338A1 MAGNETORESISTIVE MAGNETIC HEAD AND MAGNETIC RECORDING AND REPRODUCING APPARATUS 有权
标题翻译：磁性磁头和磁记录和再现装置
公开(公告)号：US20140211338A1
公开(公告)日：2014-07-31
申请号：US14165023
申请日：2014-01-27
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hitoshi IWASAKI , Shuichi MURAKAMI , Masayuki TAKAGISHI , Susumu HASHIMOTO , Yousuke ISOWAKI , Naoki HASE , Masaki KADO
IPC分类号： G11B5/31
CPC分类号： G11B5/3912
摘要： A magnetic head according to an embodiment includes a first magnetic shield and a second magnetic shield that are opposed to each other, and a magnetoresistive film arranged between the first magnetic shield and the second magnetic shield, and including a first magnetic layer including a first metal layer that contains 90 at. % or more of Fe and a first Heusler alloy layer, a second magnetic layer arranged on a side of the first Heusler alloy layer opposite from the first magnetic layer, and an intermediate layer arranged between the first Heusler alloy layer and the second magnetic layer.
摘要翻译：根据实施例的磁头包括彼此相对的第一磁屏蔽和第二磁屏蔽，以及布置在第一磁屏蔽和第二磁屏蔽之间的磁阻膜，并且包括第一磁性层，第一磁性层包括第一金属包含90的层。 Fe和第一Heusler合金层的％以上，配置在与第一磁性层相反的第一Heusler合金层的一侧的第二磁性层，以及布置在第一Heusler合金层和第二磁性层之间的中间层。

5. 发明申请

US20140043713A1 MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC HEAD ASSEMBLY, MAGNETIC RECORDING AND REPRODUCING APPARATUS, AND METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT 审中-公开
标题翻译：磁阻效应元件，磁头，磁头组件，磁记录和再现装置以及制造磁阻效应元件的方法
公开(公告)号：US20140043713A1
公开(公告)日：2014-02-13
申请号：US13936652
申请日：2013-07-08
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yousuke ISOWAKI , Hitoshi IWASAKI , Masayuki TAKAGISHI
IPC分类号： G11B5/11 , H01F41/02 , H01F7/00
CPC分类号： G11B5/11 , B82Y40/00 , G11B5/3909 , G11B5/3912 , G11B5/4555 , H01F7/00 , H01F10/324 , H01F41/02 , H01F41/302 , Y10T29/4902
摘要： According to one embodiment, a magneto-resistance effect element includes a first shield, a second shield, a third shield, a first magnetic layer, a second magnetic layer, and an intermediate layer. The third shield is provided between the first shield and the second shield, and is in contact with the second shield. A length of the third shield along a first direction crossing a stacking direction from the first shield toward the second shield is shorter than a length along the first direction of the second shield. The first magnetic layer is provided between the first shield and the third shield. The second magnetic layer is provided between the first magnetic layer and the third shield, and is exchange-coupled to the third shield. The intermediate layer is provided between the first magnetic layer and the second magnetic layer.
摘要翻译：根据一个实施例，磁阻效应元件包括第一屏蔽，第二屏蔽，第三屏蔽，第一磁性层，第二磁性层和中间层。第三屏蔽设置在第一屏蔽和第二屏蔽之间，并与第二屏蔽接触。沿着与第一屏蔽朝着第二屏蔽的堆叠方向交叉的第一方向的第三屏蔽件的长度比沿着第二屏蔽件的第一方向的长度短。第一磁性层设置在第一屏蔽和第三屏蔽之间。第二磁性层设置在第一磁性层和第三屏蔽之间，并与第三屏蔽层交换耦合。中间层设置在第一磁性层和第二磁性层之间。

6. 发明申请

US20180068679A1 MAGNETIC HEAD AND MAGNETIC RECORDING AND REPRODUCING DEVICE 审中-公开
公开(公告)号：US20180068679A1
公开(公告)日：2018-03-08
申请号：US15443760
申请日：2017-02-27
申请人： Kabushiki Kaisha Toshiba
发明人： Masayuki TAKAGISHI , Kenichiro YAMADA , Naoyuki NARITA , Tomoyuki MAEDA , Katsuya SUGAWARA , Yousuke ISOWAKI
IPC分类号： G11B5/31 , H02K41/035 , H02P6/08
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/17 , G11B5/3116 , G11B5/3123 , H02K41/0354 , H02P6/08
摘要： According to one embodiment, a magnetic head includes a magnetic pole, and a coil. The coil includes a first coil portion separated from the magnetic pole in a first direction. The magnetic pole includes a magnetic pole end portion, and first and second magnetic pole edge portions connected to the magnetic pole end portion. The first coil portion includes first and second coil edge portions, and a third coil edge portion overlapping the magnetic pole and being connected to the first and second coil edge portions. The first magnetic pole edge portion includes a first magnetic pole overlap portion overlapping the first coil edge portion. The second magnetic pole edge portion includes a second magnetic pole overlap portion overlapping the second coil edge portion. The magnetic pole end portion has a magnetic pole end portion center in a second direction connecting the first and second magnetic pole overlap portions.

7. 发明申请

US20140334041A1 MAGNETORESISTIVE ELEMENT, MAGNETIC HEAD, MAGNETIC RECORDING AND REPRODUCING APPARATUS, AND METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件，磁头，磁记录和再现装置，以及制造磁性元件的方法
公开(公告)号：US20140334041A1
公开(公告)日：2014-11-13
申请号：US14206175
申请日：2014-03-12
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Naoki HASE , Masayuki TAKAGISHI , Susumu HASHIMOTO , Shuichi MURAKAMI , Yousuke ISOWAKI , Masaki KADO , Hitoshi IWASAKI
IPC分类号： G11B5/31
CPC分类号： G01R33/00 , G01R33/093 , G11B5/3912 , G11B5/3967 , G11B2005/0024 , Y10T428/1121
摘要： A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first magnetic film; a second magnetic film; and an intermediate film of a nonmagnetic material disposed between the first magnetic film and the second magnetic film, at least one of the first magnetic film and the second magnetic film being formed of a material expressed as AxB1-x(65 at %≦x≦85 at %) where A is an alloy containing Co and at least one element selected from Fe and Mn, and B is an alloy containing Si or Ge, a Si concentration in the at least one of the first magnetic film and the second magnetic film decreasing and a Ge concentration increasing as a distance from the intermediate film increases.
摘要翻译：根据实施例的磁阻元件包括：磁阻效应膜，包括：第一磁膜; 第二磁性膜; 以及设置在所述第一磁性膜和所述第二磁性膜之间的非磁性材料的中间膜，所述第一磁性膜和所述第二磁性膜中的至少一个由表示为AxB1-x（65at％＆nlE; x＆amp; ; 85原子％）其中A是含有Co和至少一种选自Fe和Mn的元素的合金，B是含有Si或Ge的合金，第一磁性膜和第二磁性体中的至少一种中的Si浓度随着距离中间膜的距离增加，Ge浓度增加。

8. 发明申请

US20140049857A1 MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC HEAD ASSEMBLY, MAGNETIC RECORDING AND REPRODUCING APPARATUS, AND METHOD FOR MANUFACTURING MAGNETO-RESISTANCE EFFECT ELEMENT 有权
标题翻译：磁阻效应元件，磁头，磁头组件，磁记录和再现装置以及制造磁阻效应元件的方法
公开(公告)号：US20140049857A1
公开(公告)日：2014-02-20
申请号：US13939799
申请日：2013-07-11
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yousuke ISOWAKI , Hitoshi Iwasaki , Masayuki Takagishi
IPC分类号： G11B5/11
CPC分类号： G11B5/11 , G11B5/112 , G11B5/3163 , G11B5/3912 , G11B5/3916 , G11B5/3932 , G11B5/398 , Y10T428/1121
摘要： According to one embodiment, a magneto-resistance effect element includes: a first shield; a second shield; a first side shield layer; a second side shield layer; a stacked body; a first shield guide layer; and a second shield guide layer. The first shield guide layer includes a fifth magnetic layer provided between the first side shield layer and the stacked body. The second shield guide layer includes a sixth magnetic layer provided between the second side shield layer and the stacked body. A distance between the first side shield layer and the first shield guide layer is shorter than a distance between the stacked body and the first shield guide layer. A distance between the second side shield layer and the second shield guide layer is shorter than a distance between the stacked body and the second shield guide layer.
摘要翻译：根据一个实施例，磁阻效应元件包括：第一屏蔽; 第二个盾牌第一侧屏蔽层; 第二侧屏蔽层; 堆叠的身体第一屏蔽引导层; 和第二屏蔽引导层。第一屏蔽引导层包括设置在第一侧屏蔽层和层叠体之间的第五磁性层。第二屏蔽引导层包括设置在第二侧屏蔽层和层叠体之间的第六磁性层。第一侧屏蔽层和第一屏蔽引导层之间的距离比层叠体与第一屏蔽引导层之间的距离短。第二侧屏蔽层和第二屏蔽引导层之间的距离比层叠体与第二屏蔽引导层之间的距离短。

9. 发明申请

US20230068268A1 MAGNETIC REPRODUCING AND PROCESSING DEVICE, MAGNETIC RECORDING AND REPRODUCING DEVICE, AND MAGNETIC REPRODUCING METHOD 有权
公开(公告)号：US20230068268A1
公开(公告)日：2023-03-02
申请号：US17649567
申请日：2022-02-01
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Yousuke ISOWAKI , Katsuya SUGAWARA
IPC分类号： G11B20/18 , G11B5/012
摘要： According to one embodiment, a magnetic reproducing and processing device includes an acquirer and a processor. The acquirer is configured to acquire a first electric signal obtained by reproducing information recorded in a first recording area of a magnetic recording medium by a first reproducing element and a second electric signal obtained by reproducing the information recorded in the first recording area by a second reproducing element. A first sensitivity of the first reproducing element to a magnetic signal recorded on the magnetic recording medium is different from a second sensitivity of the second reproducing element to the magnetic signal. The processor is configured to output a reproduced signal corresponding to the information recorded in the first recording area based on the first electric signal and the second electric signal acquired by the acquirer.

10. 发明申请

US20190035449A1 MEMORY SYSTEM, SEMICONDUCTOR STORAGE DEVICE, AND SIGNAL PROCESSING SYSTEM 审中-公开
公开(公告)号：US20190035449A1
公开(公告)日：2019-01-31
申请号：US15911211
申请日：2018-03-05
申请人： Kabushiki Kaisha Toshiba
发明人： Daisuke SAIDA , Yousuke ISOWAKI , Michael Arnaud QUINSAT , Kenichiro YAMADA , Kosuke TATSUMURA
IPC分类号： G11C11/16 , G06N7/00
CPC分类号： G11C11/1675 , G06N3/0445 , G06N3/0454 , G06N3/0472 , G06N3/0635 , G06N3/084 , G06N7/005 , G11C11/161 , G11C11/1673
摘要： A memory system has a nonvolatile memory having a plurality of readable and writable memory cells, a write voltage control unit that controls at least one of a voltage value and a pulse width of a write voltage of the nonvolatile memory in accordance with a weight of a signal processing path or a signal processing node, a write unit that writes data in two or more memory cell groups among the plurality of memory cells using the write voltage controlled by the write voltage control unit, a reversal probability detection unit that detects a reversal probability of the memory cell group when writing data is written by the write unit, and a weight conversion unit that converts the detected reversal probability into a weight.

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