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1. 发明授权

US10901325B2 Determining the impacts of stochastic behavior on overlay metrology data 有权
公开(公告)号：US10901325B2
公开(公告)日：2021-01-26
申请号：US15763662
申请日：2018-02-27
申请人： KLA-TENCOR CORPORATION
发明人： Evgeni Gurevich , Michael E. Adel , Roel Gronheid , Yoel Feler , Vladimir Levinski , Dana Klein , Sharon Aharon
IPC分类号： G06F11/30 , G03F7/20 , G01B11/02 , H01J37/28
摘要： Methods are provided for designing metrology targets and estimating the uncertainty error of metrology metric values with respect to stochastic noise such as line properties (e.g., line edge roughness, LER). Minimal required dimensions of target elements may be derived from analysis of the line properties and uncertainty error of metrology measurements, by either CDSEM (critical dimension scanning electron microscopy) or optical systems, with corresponding targets. The importance of this analysis is emphasized in view of the finding that stochastic noise may have increased importance with when using more localized models such as CPE (correctables per exposure). The uncertainty error estimation may be used for target design, enhancement of overlay estimation and evaluation of measurement reliability in multiple contexts.

2. 发明授权

US10579768B2 Process compatibility improvement by fill factor modulation 有权
公开(公告)号：US10579768B2
公开(公告)日：2020-03-03
申请号：US15502950
申请日：2016-11-04
申请人： KLA-Tencor Corporation
发明人： Vladimir Levinski , Eitan Hajaj , Tal Itzkovich , Sharon Aharon , Michael E. Adel , Yuri Paskover , Daria Negri , Yuval Lubashevsky , Amnon Manassen , Myungjun Lee , Mark D. Smith
IPC分类号： G06F17/50 , H01L21/027 , G03F7/20
摘要： Metrology targets and target design methods are provided, in which target elements are defined by replacing elements from a periodic pattern having a pitch p, by assist elements having at least one geometric difference from the replaced elements, to form a composite periodic structure that maintains the pitch p as a single pitch. Constructing targets within the bounds of compatibility with advanced multiple patterning techniques improves the fidelity of the targets and fill factor modulation enables adjustment of the targets to produce sufficient metrology sensitivity for extracting the overlay while achieving process compatibility of the targets.

3. 发明申请

US20180253017A1 Overlay Control with Non-Zero Offset Prediction 审中-公开
公开(公告)号：US20180253017A1
公开(公告)日：2018-09-06
申请号：US15867485
申请日：2018-01-10
申请人： KLA-Tencor Corporation
发明人： Michael E. Adel , Amnon Manassen , William Pierson , Ady Levy , Pradeep Subrahmanyan , Liran Yerushalmi , DongSub Choi , Hoyoung Heo , Dror Alumot , John Charles Robinson
IPC分类号： G03F7/20
CPC分类号： G03F7/70633 , G03F7/705 , G03F7/70508 , G03F7/7085
摘要： A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.

4. 发明授权

US09903711B2 Feed forward of metrology data in a metrology system 有权
公开(公告)号：US09903711B2
公开(公告)日：2018-02-27
申请号：US15090389
申请日：2016-04-04
申请人： KLA-Tencor Corporation
发明人： Ady Levy , Daniel Kandel , Michael E. Adel , Leonid Poslavsky , John Robinson , Tal Marciano , Barak Bringoltz , Tzahi Grunzweig , Dana Klein , Tal Itzkovich , Nadav Carmel , Nuriel Amir , Vidya Ramanathan , Janay Camp , Mark Wagner
IPC分类号： G01B11/14 , G01B11/27 , G01N21/95 , G03F7/20 , G01N21/21 , G01N21/31 , G01N21/41 , G01N21/47 , G01N21/64
CPC分类号： G01B11/272 , G01N21/211 , G01N21/31 , G01N21/41 , G01N21/4738 , G01N21/4788 , G01N21/6489 , G01N21/9501 , G01N2021/213 , G03F7/705 , G03F7/70525 , G03F7/70533 , G03F7/70616
摘要： A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.

5. 发明申请

US20160042105A1 TARGET AND PROCESS SENSITIVITY ANALYSIS TO REQUIREMENTS 审中-公开
标题翻译：目标和过程灵敏度分析要求
公开(公告)号：US20160042105A1
公开(公告)日：2016-02-11
申请号：US14919954
申请日：2015-10-22
申请人： KLA-Tencor Corporation
发明人： Michael E. Adel , Nuriel Amir , Mark Ghinovker , Tal Shusterman , David Gready , Sergey Borodyansky
IPC分类号： G06F17/50
摘要： Systems and method are provided for analyzing target, process and metrology configuration sensitivities to a wide range of parameters, according to external requirements or inner development and verification needs. Systems comprise the following elements. An input module is arranged to receive parameters relating to targets, target metrology conditions and production processes, to generate target data. A metrology simulation unit is arranged to simulate metrology measurements of targets from the target data and to generate multiple metrics that quantify the simulated target measurements. A sensitivity analysis module is arranged to derive functional dependencies of the metrics on the parameters and to define required uncertainties of the parameters with respect to the derived functional dependencies. Finally, a target optimization module is arranged to rank targets and target metrology conditions with respect to the simulated target measurements.
摘要翻译：提供系统和方法，根据外部要求或内部开发和验证需求，将目标，过程和度量配置灵敏度分析到广泛的参数。系统包括以下要素。输入模块被布置成接收与目标相关的参数，目标计量条件和生产过程，以产生目标数据。计量模拟单元被设置为模拟来自目标数据的目标的度量测量并且生成量化模拟目标测量的多个度量。灵敏度分析模块被布置为导出度量对参数的功能依赖性并且相对于导出的功能依赖性来定义参数的所需不确定性。最后，设置目标优化模块以对目标和目标计量条件进行相对于模拟目标测量的排序。

6. 发明授权

US10203200B2 Analyzing root causes of process variation in scatterometry metrology 有权
公开(公告)号：US10203200B2
公开(公告)日：2019-02-12
申请号：US15329618
申请日：2016-11-01
申请人： KLA-Tencor Corporation
发明人： Tal Marciano , Michael E. Adel , Mark Ghinovker , Barak Bringoltz , Dana Klein , Tal Itzkovich , Vidya Ramanathan , Janay Camp
IPC分类号： G06F11/00 , G01B11/27 , G03F7/20 , H01L21/66
摘要： Method, metrology modules and RCA tool are provided, which use the behavior of resonance region(s) in measurement landscapes to evaluate and characterize process variation with respect to symmetric and asymmetric factors, and provide root cause analysis of the process variation with respect to process steps. Simulations of modeled stacks with different layer thicknesses and process variation factors may be used to enhance the analysis and provide improved target designs, improved algorithms and correctables for metrology measurements. Specific targets that exhibit sensitive resonance regions may be utilize to enhance the evaluation of process variation.

7. 发明授权

US10025285B2 On-product derivation and adjustment of exposure parameters in a directed self-assembly process 有权
公开(公告)号：US10025285B2
公开(公告)日：2018-07-17
申请号：US14755758
申请日：2015-06-30
申请人： KLA-TENCOR CORPORATION
发明人： Roie Volkovich , Eran Amit , Nuriel Amir , Michael E. Adel
IPC分类号： G06F17/50 , G05B19/048 , G03F7/00 , H01L21/66 , G03F7/20
摘要： Methods and metrology tool modules embodying the methods are provided. Methods comprise measuring characteristics of intermediate features such as guiding lines in a directed self-assembly (DSA) process, deriving exposure parameters from the measured characteristics; and adjusting production parameters for producing consecutive target features according to the derived exposure parameters. The methods and modules enhance the accuracy of the DSA-produced structures and related measurements.

8. 发明授权

US09875946B2 On-device metrology 有权
公开(公告)号：US09875946B2
公开(公告)日：2018-01-23
申请号：US14252323
申请日：2014-04-14
申请人： KLA-Tencor Corporation
发明人： Andrei V. Shchegrov , Jonathan M. Madsen , Stilian Ivanov Pandev , Ady Levy , Daniel Kandel , Michael E. Adel , Ori Tadmor
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , H01L22/20 , H01L22/30 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.

9. 发明申请

US20170060001A1 VERIFICATION METROLOGY TARGETS AND THEIR DESIGN 审中-公开
标题翻译：验证计量目标及其设计
公开(公告)号：US20170060001A1
公开(公告)日：2017-03-02
申请号：US15351995
申请日：2016-11-15
申请人： KLA-Tencor Corporation
发明人： Michael E. Adel , Inna Tarshish-Shapir , Jeremy (Shi-Ming) Wei , Mark Ghinovker
IPC分类号： G03F7/20 , G06F17/50
摘要： Metrology target design methods and verification targets are provided. Methods include using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may include overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also include modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.
摘要翻译：提供计量目标设计方法和验证目标。方法包括使用与设计的计量目标相关的OCD数据作为目标模型与晶片上的相应实际目标之间的差异的估计，以及调整度量目标设计模型以补偿估计的差异。专用的验证目标可以包括覆盖目标特征，并且被尺寸优化以由OCD传感器测量，以便能够补偿由生产过程变化导致的不准确性。方法还包括修改制造商和计量供应商之间的工作流程，从而提供更高保真度量的目标设计模型，并最终提高计量测量的精度。

10. 发明授权

US10705434B2 Verification metrology target and their design 有权
公开(公告)号：US10705434B2
公开(公告)日：2020-07-07
申请号：US15351995
申请日：2016-11-15
申请人： KLA-Tencor Corporation
发明人： Michael E. Adel , Inna Tarshish-Shapir , Jeremy (Shi-Ming) Wei , Mark Ghinovker
IPC分类号： G06F17/50 , G03F7/20 , H01L21/66 , G06F30/00
摘要： Metrology target design methods and verification targets are provided. Methods include using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may include overlay target features and be size optimized to be measurable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also include modifications to workflows between manufacturers and metrology vendors which provide enabled higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.

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