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1. 发明授权

US07858962B2 AlInGaN light-emitting device 有权
标题翻译： AlInGaN发光器件
公开(公告)号：US07858962B2
公开(公告)日：2010-12-28
申请号：US12354317
申请日：2009-01-15
申请人： Katherine Louise Smith , Mathieu Xavier Sénès , Tim Michael Smeeton , Stewart Edward Hooper
发明人： Katherine Louise Smith , Mathieu Xavier Sénès , Tim Michael Smeeton , Stewart Edward Hooper
IPC分类号： H01L29/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0213 , H01S5/341 , H01S5/3412
摘要： A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission (3) comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer (6) is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlxGa1-xN layer serving, in use, to promote the injection of carriers into the active region.
摘要翻译：在（Al，Ga，In）N材料体系中制造的半导体发光器件具有包含InGaN量子点或InGaN量子线的用于发光的有源区（3）。在有源区的基板侧设置AlGaN层（6）。这增加了发光装置的光输出。这种增加的光输出被认为是由AlxGa1-xN层在使用中产生的，以促进载流子注入有源区。

2. 发明授权

US08334157B2 Semiconductor device and a method of manufacture thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08334157B2
公开(公告)日：2012-12-18
申请号：US12189972
申请日：2008-08-12
申请人： Tim Michael Smeeton , Katherine Louise Smith , Mathieu Xavier Sénès , Stewart Edward Hooper
发明人： Tim Michael Smeeton , Katherine Louise Smith , Mathieu Xavier Sénès , Stewart Edward Hooper
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01L31/101 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L29/127 , H01L29/2003 , H01L33/06 , H01S5/3412 , H01S5/34333 , H01S5/4087
摘要： A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface having at least one first region with a first (average surface lattice) parameter value and at least one second region having a second parameter value different from the first. The semiconductor layer is deposited to a thickness so self-organized islands form over both the first and second regions. The difference in the parameter value means the islands over the first region have a first average parameter value and the islands over the second region have a second average parameter value different from the first. A capping layer is deposited over islands and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands.
摘要翻译：制造半导体器件的方法包括在半导体表面上沉积半导体层，所述半导体表面具有至少一个具有第一（平均表面晶格）参数值的第一区域和至少一个第二区域，该第二区域具有与第一参数值不同的第二参数值。半导体层被沉积成厚度，从而在第一和第二区域上形成自组织的岛状物。参数值的差异意味着第一区域上的岛具有第一平均参数值，并且第二区域上的岛具有与第一区不同的第二平均参数值。覆盖层沉积在岛上并且具有比岛更大的禁止带隙，由此岛由于第一和第二区域之间的差异而形成量子点，其在第一和第二区域上具有不同的性质。

3. 发明授权

US09029830B2 Multi-quantum well LED structure with varied barrier layer composition 有权
标题翻译：多量子阱LED结构具有不同的阻挡层组成
公开(公告)号：US09029830B2
公开(公告)日：2015-05-12
申请号：US13465545
申请日：2012-05-07
申请人： Mathieu Xavier Sénès , Valerie Berryman-Bousquet
发明人： Mathieu Xavier Sénès , Valerie Berryman-Bousquet
IPC分类号： H01L33/06 , H01L33/32 , H01L33/18
CPC分类号： H01L33/325 , H01L33/06 , H01L33/18
摘要： A group III nitride-based light emitting device includes an n-type group III nitride-based semiconductor layer, a p-type group III nitride-based semiconductor layer, and a group III nitride-based active region between the p-type semiconductor layer and the n-type semiconductor layer. The active region includes a plurality of sequentially stacked group III nitride-based quantum well layers interspersed with barrier layers. A plurality of the barrier layers have a variation in composition of a first element along a growth direction within a thickness of each of the plurality of barrier layers, and the variation in composition of the first element has at least one minimum and a position of the minimum varies in the plurality of barrier layers. The first element may be indium or aluminum, and the number of barrier layers including the composition variation may be at least three barrier layers. The composition variation may vary linearly or non-linearly.
摘要翻译： III族氮化物系发光器件包括n型III族氮化物基半导体层，p型III族氮化物基半导体层和在p型半导体层之间的III族氮化物基有源区和n型半导体层。有源区包括散布有阻挡层的多个依次层叠的III族氮化物基量子阱层。多个阻挡层在多个阻挡层的每一个的厚度内沿着生长方向具有第一元件的组成变化，并且第一元件的组成变化具有至少一个最小值和最小值在多个阻挡层中变化。第一元素可以是铟或铝，并且包括组成变化的阻挡层的数量可以是至少三个阻挡层。组成变化可以线性或非线性地变化。

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