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1. 发明申请

US20090256165A1 METHOD OF GROWING AN ACTIVE REGION IN A SEMICONDUCTOR DEVICE USING MOLECULAR BEAM EPITAXY 审中-公开
标题翻译：使用分子束外延生长半导体器件中的活性区域的方法
公开(公告)号：US20090256165A1
公开(公告)日：2009-10-15
申请号：US12102261
申请日：2008-04-14
申请人： Katherine Louise SMITH , Mathieu Xavier Senes , Tim Michael Smeeton , Victoria Broadley , Stewart Edward Hooper
发明人： Katherine Louise SMITH , Mathieu Xavier Senes , Tim Michael Smeeton , Victoria Broadley , Stewart Edward Hooper
IPC分类号： H01L21/20 , H01L33/00 , H01S5/323
CPC分类号： H01S5/34326 , B82Y10/00 , B82Y20/00 , H01L21/0254 , H01L21/02631 , H01L33/007 , H01L33/06 , H01L33/08 , H01S5/183 , H01S5/341 , H01S5/3412 , H01S2304/02
摘要： A method of making an (Al, Ga, In)N semiconductor device having a substrate and an active region is provided. The method includes growing the active region using a combination of (i) plasma-assisted molecular beam epitaxy; and (ii) molecular beam epitaxy with a gas including nitrogen-containing molecules in which the nitrogen-containing molecules dissociate at a surface of the substrate at a temperature which the active region is grown.
摘要翻译：提供一种制造具有衬底和有源区的（Al，Ga，In）N半导体器件的方法。该方法包括使用（i）等离子体辅助分子束外延的组合来生长活性区域; 和（ii）分子束外延，其中包含含氮分子的气体，其中含氮分子在活性区域生长的温度下在基底表面分解。

2. 发明申请

US20120204957A1 METHOD FOR GROWING AlInGaN LAYER 审中-公开
标题翻译：生长AlInGaN层的方法
公开(公告)号：US20120204957A1
公开(公告)日：2012-08-16
申请号：US13024377
申请日：2011-02-10
申请人： David NICHOLLS , Tim Michael Smeeton , Valerie Berryman-Bousquet , Stewart Edward Hooper
发明人： David NICHOLLS , Tim Michael Smeeton , Valerie Berryman-Bousquet , Stewart Edward Hooper
IPC分类号： H01L21/20 , H01L29/20 , H01L31/0304 , H01L33/32
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02458 , H01L21/02631 , H01L29/2003 , H01L31/03044 , H01L31/03048 , H01L31/1848 , H01L31/1856 , H01L33/0075 , Y02E10/544
摘要： A method for growing an In(x)Al(y)Ga(1−x−y)N layer (where x is greater than zero and less than or equal to one, y is greater than or equal to zero and less than or equal to one and the sum of x and y is less than or equal to one). The method includes supplying plasma-activated nitrogen atoms as a source of nitrogen for the In(x)Al(y)Ga(1−x−y)N layer to a growth surface, where a flux of the plasma-activated nitrogen atoms supplied to the growth surface is at least four times higher than a total flux of aluminium and gallium atoms also supplied to the growth surface, where either the aluminium or gallium flux may or may not be zero; and simultaneously supplying indium atoms and nitrogen-containing molecules to the growth surface.
摘要翻译：用于生长In（x）Al（y）Ga（1-x-y）N层的方法（其中x大于零且小于或等于1，y大于或等于零且小于或等于0，等于1，x和y的和小于或等于1）。该方法包括将等离子体激活的氮原子作为In（x）Al（y）Ga（1-x-y）N层的氮源提供给生长表面，其中提供了等离子体激活的氮原子的通量生长表面比也提供给生长表面的铝和镓原子的总通量高至少四倍，其中铝或镓焊剂可以是或不是零; 同时向生长表面提供铟原子和含氮分子。

3. 发明授权

US07858962B2 AlInGaN light-emitting device 有权
标题翻译： AlInGaN发光器件
公开(公告)号：US07858962B2
公开(公告)日：2010-12-28
申请号：US12354317
申请日：2009-01-15
申请人： Katherine Louise Smith , Mathieu Xavier Sénès , Tim Michael Smeeton , Stewart Edward Hooper
发明人： Katherine Louise Smith , Mathieu Xavier Sénès , Tim Michael Smeeton , Stewart Edward Hooper
IPC分类号： H01L29/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0213 , H01S5/341 , H01S5/3412
摘要： A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission (3) comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer (6) is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlxGa1-xN layer serving, in use, to promote the injection of carriers into the active region.
摘要翻译：在（Al，Ga，In）N材料体系中制造的半导体发光器件具有包含InGaN量子点或InGaN量子线的用于发光的有源区（3）。在有源区的基板侧设置AlGaN层（6）。这增加了发光装置的光输出。这种增加的光输出被认为是由AlxGa1-xN层在使用中产生的，以促进载流子注入有源区。

4. 发明申请

US20090179191A1 AlInGaN LIGHT-EMITTING DEVICE 有权
标题翻译： AlInGaN发光器件
公开(公告)号：US20090179191A1
公开(公告)日：2009-07-16
申请号：US12354317
申请日：2009-01-15
申请人： Katherine Louise SMITH , Mathieu Xavier SENES , Tim Michael SMEETON , Stewart Edward HOOPER
发明人： Katherine Louise SMITH , Mathieu Xavier SENES , Tim Michael SMEETON , Stewart Edward HOOPER
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0213 , H01S5/341 , H01S5/3412
摘要： A semiconductor light-emitting device fabricated in the (Al,Ga,In)N materials system has an active region for light emission (3) comprising InGaN quantum dots or InGaN quantum wires. An AlGaN layer (6) is provided on a substrate side of the active region. This increases the optical output of the light-emitting device. This increased optical output is believed to result from the AlxGa1-xN layer serving, in use, to promote the injection of carriers into the active region.
摘要翻译：在（Al，Ga，In）N材料体系中制造的半导体发光器件具有包含InGaN量子点或InGaN量子线的用于发光的有源区（3）。在有源区的基板侧设置AlGaN层（6）。这增加了发光装置的光输出。这种增加的光输出被认为是由AlxGa1-xN层在使用中产生的，以促进载流子注入有源区。

5. 发明申请

US20090045394A1 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090045394A1
公开(公告)日：2009-02-19
申请号：US12189972
申请日：2008-08-12
申请人： Tim Michael Smeeton , Katherine Louise Smith , Mathieu Xavier Senes , Stewart Edward Hooper
发明人： Tim Michael Smeeton , Katherine Louise Smith , Mathieu Xavier Senes , Stewart Edward Hooper
IPC分类号： H01L33/00 , H01L31/0352 , H01L21/20
CPC分类号： H01L31/101 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L29/127 , H01L29/2003 , H01L33/06 , H01S5/3412 , H01S5/34333 , H01S5/4087
摘要： A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface having at least one first region with a first (average surface lattice) parameter value and at least one second region having a second parameter value different from the first. The semiconductor layer is deposited to a thickness so self-organised islands form over both the first and second regions. The difference in the parameter value means the islands over the first region have a first average parameter value and the islands over the second region have a second average parameter value different from the first. A capping layer is deposited over islands and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands.
摘要翻译：一种制造半导体器件的方法包括在半导体表面上沉积半导体层，所述半导体表面具有至少一个具有第一（平均表面晶格）参数值的第一区域和至少一个第二区域，该第二区域具有与第一参数值不同的第二参数值。半导体层被沉积成厚度，从而在第一和第二区域上形成自组织的岛状物。参数值的差异意味着第一区域上的岛具有第一平均参数值，并且第二区域上的岛具有与第一区不同的第二平均参数值。覆盖层沉积在岛上并且具有比岛更大的禁止带隙，由此岛由于第一和第二区域之间的差异而形成量子点，其在第一和第二区域上具有不同的性质。

6. 发明授权

US08334157B2 Semiconductor device and a method of manufacture thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08334157B2
公开(公告)日：2012-12-18
申请号：US12189972
申请日：2008-08-12
申请人： Tim Michael Smeeton , Katherine Louise Smith , Mathieu Xavier Sénès , Stewart Edward Hooper
发明人： Tim Michael Smeeton , Katherine Louise Smith , Mathieu Xavier Sénès , Stewart Edward Hooper
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01L31/101 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L29/127 , H01L29/2003 , H01L33/06 , H01S5/3412 , H01S5/34333 , H01S5/4087
摘要： A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface having at least one first region with a first (average surface lattice) parameter value and at least one second region having a second parameter value different from the first. The semiconductor layer is deposited to a thickness so self-organized islands form over both the first and second regions. The difference in the parameter value means the islands over the first region have a first average parameter value and the islands over the second region have a second average parameter value different from the first. A capping layer is deposited over islands and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands.
摘要翻译：制造半导体器件的方法包括在半导体表面上沉积半导体层，所述半导体表面具有至少一个具有第一（平均表面晶格）参数值的第一区域和至少一个第二区域，该第二区域具有与第一参数值不同的第二参数值。半导体层被沉积成厚度，从而在第一和第二区域上形成自组织的岛状物。参数值的差异意味着第一区域上的岛具有第一平均参数值，并且第二区域上的岛具有与第一区不同的第二平均参数值。覆盖层沉积在岛上并且具有比岛更大的禁止带隙，由此岛由于第一和第二区域之间的差异而形成量子点，其在第一和第二区域上具有不同的性质。

7. 发明申请

US20120068196A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND A METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120068196A1
公开(公告)日：2012-03-22
申请号：US13228648
申请日：2011-09-09
申请人： Tim Michael SMEETON , Mathieu Xavier SENES , Wei-Sin TAN , Valerie BERRYMAN-BOUSQUET
发明人： Tim Michael SMEETON , Mathieu Xavier SENES , Wei-Sin TAN , Valerie BERRYMAN-BOUSQUET
IPC分类号： H01L33/20 , H01L33/00
CPC分类号： H01L33/20 , H01L33/0095 , H01S5/0425 , H01S5/2086 , H01S5/32341
摘要： A semiconductor light-emitting device comprises a semiconductor layer structure disposed over a substrate. The layer structure includes an active region disposed between a first layer and a second layer. One or more cavities are present in the layer structure, each cavity being coincident with a threading dislocation and extending from an upper surface of the layer structure through at least the second layer and the active region. Removing material where a threading dislocation is present provides effective suppression of the tendency of the threading dislocations to act as non-radiative centres, thereby improving the light output efficiency of the device. The device may be manufactured by a first step of selectively etching the layer structure at the locations of one or more threading dislocation to form a pilot cavity at the or each location. A second etching step is applied to increase the depth of each pilot cavity.
摘要翻译：半导体发光器件包括设置在衬底上的半导体层结构。层结构包括设置在第一层和第二层之间的有源区。层结构中存在一个或多个空腔，每个空腔与穿透位错重合，并且从层结构的上表面至少穿过第二层和活性区延伸。去除穿透位错的材料提供了有效地抑制穿透位错作为非辐射中心的趋势，从而提高了装置的光输出效率。可以通过在一个或多个穿透错位的位置处选择性地蚀刻层结构以在该位置处或每个位置处形成引导腔的第一步骤来制造该装置。应用第二蚀刻步骤来增加每个引导腔的深度。

8. 发明授权

US08900489B2 II-III-N semiconductor nanoparticles and method of making same 有权
标题翻译： II-III-N半导体纳米颗粒及其制备方法
公开(公告)号：US08900489B2
公开(公告)日：2014-12-02
申请号：US13188713
申请日：2011-07-22
申请人： Peter Neil Taylor , Jonathan Heffernan , Stewart Edward Hooper , Tim Michael Smeeton
发明人： Peter Neil Taylor , Jonathan Heffernan , Stewart Edward Hooper , Tim Michael Smeeton
IPC分类号： H01B1/02 , C09K11/62 , H01L31/032
CPC分类号： H01L33/06 , C01B21/0615 , C01B21/0632 , C01B21/072 , C09K11/623 , H01L31/032 , H01L33/26 , Y02E10/549 , Y10S977/773
摘要： The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
摘要翻译：本申请提供了氮化物半导体纳米颗粒，例如纳米晶体，其由II-III-N型新型化合物半导体族的新组合物形成，例如ZnGaN，ZnInN，ZnInGaN，ZnAlN，ZnAlGaN， ZnAlInN和ZnAlGaInN。这种类型的化合物半导体纳米晶体在现有技术中不是先前已知的。本发明还公开了作为II-III-N族半导体纳米晶体的亚组的II-N半导体纳米晶体，例如ZnN纳米晶体。可以控制新型和新型II-III-N化合物半导体纳米晶体的组成和尺寸，以便调整其带隙和发光性能。证明了紫外 - 可见红外波长范围内的高效发光。本发明的产品可用作诸如太阳能电池，发光二极管，激光二极管以及用作LED和发光EL显示器的发光磷光体材料的光电器件的组成。

9. 发明申请

US20130015362A1 FLUID PURIFICATION AND SENSOR SYSTEM 审中-公开
标题翻译：流体净化和传感器系统
公开(公告)号：US20130015362A1
公开(公告)日：2013-01-17
申请号：US13180971
申请日：2011-07-12
申请人： Stewart Edward HOOPER , Tim Michael SMEETON , Allan EVANS
发明人： Stewart Edward HOOPER , Tim Michael SMEETON , Allan EVANS
IPC分类号： G01J1/42 , G01J1/58
CPC分类号： C02F1/32 , C02F1/30 , C02F2201/3222 , C02F2201/3226 , C02F2201/326 , G01N15/1434 , G01N15/147 , G01N2015/1438
摘要： A system and method are disclosed for the simultaneous optical disinfection and detection of biological particles in a flowing fluid, such as air or water, medium. A light source for irradiating the flowing medium is a dual wavelength laser element simultaneously emitting a visible laser beam and an ultraviolet laser beam. In particular, a laser diode may generate a first visible laser light beam, and a second ultraviolet laser light beam may be generated by passing the first laser light beam through a frequency doubling crystal. Optical detectors measure scattering, fluorescence and/or transmission of the laser light beams from the air or water medium to determine the presence of biological particles in real-time.
摘要翻译：公开了用于同时光学消毒和检测流动流体（例如空气或水，介质）中的生物颗粒的系统和方法。用于照射流动介质的光源是同时发射可见激光束和紫外激光束的双波长激光元件。特别地，激光二极管可以产生第一可见激光束，并且可以通过使第一激光束通过倍频晶体来产生第二紫外激光束。光学检测器测量来自空气或水介质的激光束的散射，荧光和/或透射，以实时确定生物颗粒的存在。

10. 发明申请

US20120025146A1 II-III-N SEMICONDUCTOR NANOPARTICLES AND METHOD OF MAKING SAME 有权
标题翻译： II-III-N半导体纳米粒子及其制备方法
公开(公告)号：US20120025146A1
公开(公告)日：2012-02-02
申请号：US13188713
申请日：2011-07-22
申请人： Peter Neil Taylor , Jonathan Heffernan , Stewart Edward Hooper , Tim Michael Smeeton
发明人： Peter Neil Taylor , Jonathan Heffernan , Stewart Edward Hooper , Tim Michael Smeeton
IPC分类号： C01B21/00 , C30B7/14 , C01F7/00 , C01F5/00 , C01B21/06 , C01G15/00 , B82Y40/00 , B82Y30/00
CPC分类号： H01L33/06 , C01B21/0615 , C01B21/0632 , C01B21/072 , C09K11/623 , H01L31/032 , H01L33/26 , Y02E10/549 , Y10S977/773
摘要： The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals.The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
摘要翻译：本申请提供了氮化物半导体纳米颗粒，例如纳米晶体，其由II-III-N型新型化合物半导体族的新组合物形成，例如ZnGaN，ZnInN，ZnInGaN，ZnAlN，ZnAlGaN， ZnAlInN和ZnAlGaInN。这种类型的化合物半导体纳米晶体在现有技术中不是先前已知的。本发明还公开了作为II-III-N族半导体纳米晶体的亚组的II-N半导体纳米晶体，例如ZnN纳米晶体。可以控制新型和新型II-III-N化合物半导体纳米晶体的组成和尺寸，以便调整其带隙和发光性能。证明了紫外 - 可见红外波长范围内的高效发光。本发明的产品可用作诸如太阳能电池，发光二极管，激光二极管以及用作LED和发光EL显示器的发光磷光体材料的光电器件的组成。

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