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    • 2. 发明授权
    • Measurement system and measurement processing method
    • 测量系统和测量处理方法
    • US08456621B2
    • 2013-06-04
    • US13595013
    • 2012-08-27
    • Kazuyuki OtaMasakazu MatsuguKenji Saitoh
    • Kazuyuki OtaMasakazu MatsuguKenji Saitoh
    • G01N21/00
    • G01B11/25
    • This invention is directed to extract the scattering characteristic of a measurement target together when measuring the surface shape in a measurement system, which measures the surface shape of a measurement target, by the pattern projection method. To accomplish this, the measurement system includes an illumination unit which irradiates a measurement target with dot pattern light, a reflected light measurement unit which receives the reflected light at a reflection angle almost equal to a incident angle, and a reflected light extraction unit which extracts the inclination of the surface of the measurement target, based on the shift amount between the light receiving position of the received reflected light and a predetermined reference position, and extracts the luminance value of the reflected light and the dot diameter of the dot pattern light as information about the scattering characteristic.
    • 本发明旨在通过图案投影法在测量测量对象的表面形状的测量系统中测量表面形状时,将测量对象的散射特性一起提取。 为了实现这一点,测量系统包括用点阵图形光照射测量对象的照明单元,以几乎等于入射角的反射角接收反射光的反射光测量单元和提取出的反射光提取单元 基于接收到的反射光的光接收位置与预定的基准位置之间的偏移量,测量对象的表面的倾斜度,并将点阵图案光的反射光的亮度值和点直径提取为 关于散射特性的信息。
    • 3. 发明授权
    • Measurement system and measurement processing method
    • 测量系统和测量处理方法
    • US08274646B2
    • 2012-09-25
    • US12816069
    • 2010-06-15
    • Kazuyuki OtaMasakazu MatsuguKenji Saitoh
    • Kazuyuki OtaMasakazu MatsuguKenji Saitoh
    • G01N21/00
    • G01B11/25
    • This invention is directed to extract the scattering characteristic of a measurement target together when measuring the surface shape in a measurement system, which measures the surface shape of a measurement target, by the pattern projection method. To accomplish this, the measurement system includes an illumination unit which irradiates a measurement target with dot pattern light, a reflected light measurement unit which receives the reflected light at a reflection angle almost equal to a incident angle, and a reflected light extraction unit which extracts the inclination of the surface of the measurement target, based on the shift amount between the light receiving position of the received reflected light and a predetermined reference position, and extracts the luminance value of the reflected light and the dot diameter of the dot pattern light as information about the scattering characteristic.
    • 本发明旨在通过图案投影法在测量测量对象的表面形状的测量系统中测量表面形状时,将测量对象的散射特性一起提取。 为了实现这一点,测量系统包括用点阵图形光照射测量对象的照明单元,以几乎等于入射角的反射角接收反射光的反射光测量单元和提取出的反射光提取单元 基于接收到的反射光的光接收位置与预定的基准位置之间的偏移量,测量对象的表面的倾斜度,并将点阵图案光的反射光的亮度值和点直径提取为 关于散射特性的信息。
    • 4. 发明申请
    • MEASUREMENT SYSTEM AND MEASUREMENT PROCESSING METHOD
    • 测量系统和测量处理方法
    • US20120327400A1
    • 2012-12-27
    • US13595013
    • 2012-08-27
    • Kazuyuki OtaMasakazu MatsuguKenji Saitoh
    • Kazuyuki OtaMasakazu MatsuguKenji Saitoh
    • G01B11/25G01N21/47
    • G01B11/25
    • This invention is directed to extract the scattering characteristic of a measurement target together when measuring the surface shape in a measurement system, which measures the surface shape of a measurement target, by the pattern projection method. To accomplish this, the measurement system includes an illumination unit which irradiates a measurement target with dot pattern light, a reflected light measurement unit which receives the reflected light at a reflection angle almost equal to a incident angle, and a reflected light extraction unit which extracts the inclination of the surface of the measurement target, based on the shift amount between the light receiving position of the received reflected light and a predetermined reference position, and extracts the luminance value of the reflected light and the dot diameter of the dot pattern light as information about the scattering characteristic.
    • 本发明旨在通过图案投影法在测量测量对象的表面形状的测量系统中测量表面形状时,将测量对象的散射特性一起提取。 为了实现这一点,测量系统包括用点阵图形光照射测量对象的照明单元,以几乎等于入射角的反射角接收反射光的反射光测量单元和提取出的反射光提取单元 基于接收到的反射光的光接收位置与预定的基准位置之间的偏移量,测量对象的表面的倾斜度,并将点阵图案光的反射光的亮度值和点直径提取为 关于散射特性的信息。
    • 5. 发明申请
    • MEASUREMENT SYSTEM AND MEASUREMENT PROCESSING METHOD
    • 测量系统和测量处理方法
    • US20100328649A1
    • 2010-12-30
    • US12816069
    • 2010-06-15
    • Kazuyuki OtaMasakazu MatsuguKenji Saitoh
    • Kazuyuki OtaMasakazu MatsuguKenji Saitoh
    • G01B11/24G01B11/30
    • G01B11/25
    • This invention is directed to extract the scattering characteristic of a measurement target together when measuring the surface shape in a measurement system, which measures the surface shape of a measurement target, by the pattern projection method. To accomplish this, the measurement system includes an illumination unit which irradiates a measurement target with dot pattern light, a reflected light measurement unit which receives the reflected light at a reflection angle almost equal to a incident angle, and a reflected light extraction unit which extracts the inclination of the surface of the measurement target, based on the shift amount between the light receiving position of the received reflected light and a predetermined reference position, and extracts the luminance value of the reflected light and the dot diameter of the dot pattern light as information about the scattering characteristic.
    • 本发明旨在通过图案投影法在测量测量对象的表面形状的测量系统中测量表面形状时,将测量对象的散射特性一起提取。 为了实现这一点,测量系统包括用点阵图形光照射测量对象的照明单元,以几乎等于入射角的反射角接收反射光的反射光测量单元和提取出的反射光提取单元 基于接收到的反射光的光接收位置与预定的基准位置之间的偏移量,测量对象的表面的倾斜度,并将点阵图案光的反射光的亮度值和点直径提取为 关于散射特性的信息。
    • 9. 发明授权
    • Position detecting method and apparatus including Fraunhofer diffraction
detector
    • 位置检测方法和装置,包括弗劳恩霍夫衍射检测器
    • US5325176A
    • 1994-06-28
    • US875601
    • 1992-04-28
    • Shigeyuki SudaKenji SaitohMasakazu MatsuguNaoto AbeMinoru YoshiiRyo Kuroda
    • Shigeyuki SudaKenji SaitohMasakazu MatsuguNaoto AbeMinoru YoshiiRyo Kuroda
    • G03F9/00G01B11/02
    • G03F9/7076
    • A device usable with a first object and a second object at least one of which is provided with a diffraction grating, for detecting the position of the second object relative to the first object, is disclosed. The device includes a light source for projecting a position detecting beam upon the first object; a beam detecting portion for receiving the position detecting beam after it is directed from the first object and being incident on the second object, the beam detecting portion receiving the position detecting beam to detect the position of the second object relative to the first object; wherein at least one diffraction grating is disposed in the path of the position detecting beam to be received by the beam detecting portion, which diffraction grating is effective to diffract the position detecting beam at least twice and wherein the beam detecting portion is disposed at a site effective not to receive unwanted diffraction light produced from the or at least one diffraction grating.
    • 公开了一种可用于第一物体和第二物体的装置,其中至少一个具有用于检测第二物体相对于第一物体的位置的衍射光栅。 该装置包括用于将位置检测光束投射到第一物体上的光源; 光束检测部分,用于在从第一物体引导之后接收位置检测光束并入射到第二物体上,光束检测部分接收位置检测光束以检测第二物体相对于第一物体的位置; 其中至少一个衍射光栅设置在所述位置检测光束的路径中,以由所述光束检测部分接收,所述衍射光栅有效地将所述位置检测光束衍射至少两次,并且其中所述光束检测部分设置在位置 有效地不接收由该至少一个衍射光栅产生的不想要的衍射光。
    • 10. 发明授权
    • Position detecting method and apparatus
    • 位置检测方法和装置
    • US5235408A
    • 1993-08-10
    • US888434
    • 1992-05-28
    • Masakazu MatsuguKenji SaitohShigeyuki Suda
    • Masakazu MatsuguKenji SaitohShigeyuki Suda
    • G03F9/00
    • G03F9/7049
    • A device for detecting a positional relationship between a mask and a wafer, includes a light source for projecting light toward the mask, a first photodetecting system for detecting the position, on a predetermined plane, of first light deflected by the mask and the wafer, wherein the position of incidence on the first photodetecting system of the first light is changeable with the positional relationship between the mask and the wafer, a second photodetecting system for detecting the position, on a predetermined plane, of incidence of second light deflected by the mask, wherein the position of incidence on the second photodetecting system, of the second light being changeable with relative inclination between the mask and the light source, and a position detecting system for detecting the relative position of the mask and the wafer on the basis of the detection by the first and second photodetecting systems, wherein the detection by the position detecting system can be free from the relative inclination between the mask and the light source.
    • 一种用于检测掩模和晶片之间的位置关系的装置,包括用于将光投射到掩模的光源,用于检测由掩模和晶片偏转的第一光在预定平面上的位置的第一光电检测系统, 其中,所述第一光的第一受光系统上的入射位置可根据所述掩模和所述晶片之间的位置关系而改变;第二光电检测系统,用于检测由所述掩模偏转的第二光在预定平面上的位置的位置; 其特征在于,所述第二光检测系统中的所述入射位置,所述第二光的入射位置可以通过所述掩模和所述光源之间的相对倾斜度而变化;以及位置检测系统,用于基于所述掩模和所述光源检测所述掩模和所述晶片的相对位置 由第一和第二光电检测系统进行检测,其中位置检测系统的检测可以不受 面罩与光源之间的相对倾斜度。