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    • 3. 发明申请
    • ILLUMINATING APPARATUS AND IMAGE SENSING SYSTEM INCLUDING ILLUMINATING APPARATUS
    • 包括照明设备的照明设备和图像感测系统
    • US20070292088A1
    • 2007-12-20
    • US11761967
    • 2007-06-12
    • Kenji SaitohYoshiharu Tenmyo
    • Kenji SaitohYoshiharu Tenmyo
    • G02B6/04
    • G03B15/05G02B19/0028G02B19/0047G03B2215/0528G03B2215/0532
    • An illuminating apparatus includes a light source including a cylindrical light-emitting tube, a first optical system, a second optical system, and a third optical system. The first optical system has an incident surface on which light emitted from the light source to the object side are incident and an emergent surface from which the light passing through the incident surface are emitted. The second optical system has a reflecting surface from which light emitted from the light source to a first side are reflected. The third optical system has a reflecting surface from which light emitted from the light source to a second side opposite to the first side are reflected. The first to third optical systems each illuminate the entire illumination area of the object with light emitted from the light source and incident on the optical systems.
    • 照明装置包括:光源,包括圆柱形发光管,第一光学系统,第二光学系统和第三光学系统。 第一光学系统具有从光源发射到物体侧的光入射的入射表面,并且发射穿过入射表面的光的出射表面。 第二光学系统具有从光源发射到第一侧的光被反射的反射面。 第三光学系统具有从光源发射到与第一侧相对的第二侧的光的反射表面。 第一至第三光学系统各自使用从光源发射并入射到光学系统上的光来照亮物体的整个照明区域。
    • 4. 发明授权
    • Multiple exposure device formation
    • 多曝光装置形成
    • US06534242B2
    • 2003-03-18
    • US09783600
    • 2001-02-15
    • Mitsuro SugitaAkiyoshi SuzukiMiyoko KawashimaKenji SaitohYuichi Iwasaki
    • Mitsuro SugitaAkiyoshi SuzukiMiyoko KawashimaKenji SaitohYuichi Iwasaki
    • G03C500
    • G03F7/2022G03F7/7045G03F7/70466
    • An exposure method for transferring a device pattern to a resist, wherein the device pattern includes a first element and a second element having a linewidth narrower than the first element. The method includes a first exposure step for exposing the resist by use of an interference fringe, produced by interference of two light beams, through an exposure amount substantially not greater than a threshold of the resist, and a second exposure step for exposing the resist with a light pattern related to the first and second elements. A light component, of the light pattern, related to the first element bears an exposure amount greater than the threshold, a light component, of the light pattern, related to the second element bears an exposure amount not greater than the threshold and is to be combined with light in a portion of the interference fringe, and a sum of the exposure amount of the light component related to the second element and an exposure amount provided by the light in the portion of the interference fringe is greater than the threshold.
    • 一种用于将器件图案转印到抗蚀剂的曝光方法,其中所述器件图案包括第一元件和具有比所述第一元件窄的线宽的第二元件。 该方法包括第一曝光步骤,用于通过使用由两个光束的干涉产生的干涉条纹曝光抗蚀剂,所述干涉条纹通过基本上不大于抗蚀剂阈值的曝光量,以及第二曝光步骤,用于将抗蚀剂与 与第一和第二元素相关的光图案。 与第一元件相关的光图案的光分量具有大于阈值的曝光量,与第二元件相关的光图案的光分量具有不大于阈值的曝光量,并且为 与干涉条纹的一部分中的光结合,并且与第二元素相关的光分量的曝光量与干涉条纹部分中的光提供的曝光量之和大于阈值。
    • 6. 发明授权
    • Non-volatile semiconductor storage apparatus and production thereof
    • 非易失性半导体存储装置及其制造
    • US5891773A
    • 1999-04-06
    • US898960
    • 1997-07-23
    • Kenji Saitoh
    • Kenji Saitoh
    • H01L21/8247H01L27/112H01L27/115H01L29/788H01L29/792
    • H01L27/115H01L27/11521
    • The invention provides a non-volatile semiconductor storage apparatus wherein silicon pillars are formed by epitaxial growth thereby to suppress a dispersion in channel length and improve the quality of a gate oxide film. In production, epitaxial silicon pillars are formed by selective epitaxial growth on a p-type silicon substrate, and a gate oxide film is formed over the overall area. Polycrystalline silicon is deposited and etched back to form a first polycrystalline silicon film serving as floating gates. Ion implantation is performed to form drain regions at the tops of the epitaxial silicon pillars and form a source region on the surface of the silicon substrate. A layered insulation film is formed, and polycrystalline silicon is deposited and etched back to form a second polycrystalline silicon film which covers over the side faces of the floating gates and serves as control gates. Bit lines are formed on the drain regions.
    • 本发明提供了一种非易失性半导体存储装置,其中通过外延生长形成硅柱,从而抑制沟道长度的分散并提高栅极氧化膜的质量。 在生产中,通过在p型硅衬底上选择性外延生长形成外延硅柱,并且在整个区域上形成栅氧化膜。 多晶硅沉积并回蚀以形成用作浮栅的第一多晶硅膜。 进行离子注入以在外延硅柱的顶部形成漏极区,并在硅衬底的表面上形成源极区。 形成层状绝缘膜,沉积多晶硅并回蚀以形成覆盖在浮动栅极的侧面上并用作控制栅极的第二多晶硅膜。 位线形成在漏区。
    • 7. 发明授权
    • Position detecting apparatus and a method for manufacturing
semiconductor devices using the apparatus
    • 位置检测装置及使用该装置制造半导体器件的方法
    • US5717492A
    • 1998-02-10
    • US788350
    • 1997-01-27
    • Koichi SentokuKenji SaitohHiroshi OsawaMasanobu Hasegawa
    • Koichi SentokuKenji SaitohHiroshi OsawaMasanobu Hasegawa
    • G03F9/00H01L21/027G01B11/00
    • G03F9/70
    • A position detection apparatus and method detects the relative positional relationship between first and second objects facing each other in a facing direction. First, second and third marks each serving as a physical optical element are provided on the first object, while a fourth mark serving as a physical optical element is provided on the second object. A light projector projects light onto the first and second objects A light detector detects a first light beam diffracted by the first mark and reflected by the second object, a second light beam diffracted by the second mark and reflected by the second object, and a third light beam diffracted by the third and fourth marks. A first position detector detects the relative positional relationship between the first and second objects in the facing direction based on signals representing the first and second light beams from the light detector. A second position detector detects the relative positional relationship between the first and second objects in a direction perpendicular to the facing direction based on signals representing the first, second and third light beams from the light detector.
    • 位置检测装置和方法检测朝向彼此面对的第一和第二物体之间的相对位置关系。 首先,在第一物体上设置各自用作物理光学元件的第二和第三标记,而在第二物体上设置用作物理光学元件的第四标记。 光投影仪将光投射到第一和第二物体上光检测器检测由第一标记衍射并由第二物体反射的第一光束,由第二标记衍射并被第二物体反射的第二光束,以及第三物体 光束被第三和第四标记衍射。 第一位置检测器基于表示来自光检测器的第一和第二光束的信号来检测面向方向上的第一和第二物体之间的相对位置关系。 第二位置检测器基于表示来自光检测器的第一,第二和第三光束的信号来检测第一和第二物体在垂直于相对方向的方向上的相对位置关系。
    • 9. 发明授权
    • Method of manufacturing a semiconductor device having a polycide
structure
    • 具有多晶硅结构的半导体器件的制造方法
    • US5332692A
    • 1994-07-26
    • US47632
    • 1993-04-19
    • Kenji Saitoh
    • Kenji Saitoh
    • H01L21/203H01L21/28H01L21/3205H01L21/768H01L23/52H01L21/283
    • H01L21/76838H01L21/76889Y10S148/017Y10S148/019
    • A sputtering technique is conducted within a sputtering device the inside of which is in the state of vacuum, whereby a second polycrystal silicon film (7) is deposited on a first polycrystal silicon film (3) on the surface of which a natural oxide film (4) exists. The inside of the sputtering device is maintained to be in the state of vacuum after the second polycrystal silicon film (7) is formed. With the same sputtering device, a metal silicide film (5) is deposited on the second polycrystal film under vacuum. When a silicon oxide film is formed on the silicide film, silicons to be oxidized are uniformly supplied through the silicide film. Therefore, the polycrystal silicon film and the silicide film are not separated from each other at the boundary face between them. Further, product yield rate is improved since it is not necessary to perform sputter etching.
    • 溅射技术在其内部处于真空状态的溅射装置内进行,由此第二多晶硅膜(7)沉积在第一多晶硅膜(3)上,该第一多晶硅膜(3)的表面上具有天然氧化物膜( 4)存在。 在第二多晶硅膜(7)形成之后,溅射装置的内部保持在真空状态。 使用相同的溅射装置,在真空下在第二多晶膜上沉积金属硅化物膜(5)。 当在硅化物膜上形成氧化硅膜时,通过硅化物膜均匀地供给被氧化的硅。 因此,多晶硅膜和硅化物膜在它们之间的边界面处不分离。 此外,由于不需要进行溅射蚀刻,产品产率提高。