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1. 发明申请

US20100254665A1 Semiconductor optical communication module and manufacturing method thereof 有权
标题翻译：半导体光通信模块及其制造方法
公开(公告)号：US20100254665A1
公开(公告)日：2010-10-07
申请号：US12659967
申请日：2010-03-26
申请人： Munechika Kubota , Koji Yamada , Keizou Takemasa , Tomonori Shimamura , Satoshi Sasaki , Xiang Yu , Kouyu Moriya , Takashi Sugiyama
发明人： Munechika Kubota , Koji Yamada , Keizou Takemasa , Tomonori Shimamura , Satoshi Sasaki , Xiang Yu , Kouyu Moriya , Takashi Sugiyama
IPC分类号： G02B6/42 , H01L21/50
CPC分类号： G02B6/4207 , G02B6/12004 , G02B6/4204 , G02B6/4279 , G02B2006/12119 , H01L24/48 , H01L2224/48 , H01L2924/00014 , H01L2924/12043 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01S5/0064 , H01S5/02276 , H01S5/02284 , H01S5/02415 , H01S5/0265 , H01S5/06226 , H01S5/101 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor optical communication module includes a semiconductor chip mounted on a chip carrier and a lens assembly having an end parallel to and facing the front edge of the chip carrier. The semiconductor chip has a front facet oriented at an acute angle to the front edge of the chip carrier. An optical waveguide in the semiconductor chip transmits an optical signal that propagates on an optical axis extending from the front facet of the semiconductor chip to the end of the lens assembly. The optical axis is orthogonal to the end of the lens assembly and the front edge of the chip carrier. The angled mounting of the semiconductor chip on the chip carrier allows the lens assembly to be placed close to the edge of the chip carrier, and to be moved for optical axis adjustment without striking the chip carrier.
摘要翻译：半导体光通信模块包括安装在芯片载体上的半导体芯片和具有平行于并面向芯片载体的前边缘的端部的透镜组件。半导体芯片具有与芯片载体的前边缘成锐角取向的前刻面。半导体芯片中的光波导传输在从半导体芯片的前端面延伸到透镜组件的端部的光轴上传播的光信号。光轴与透镜组件的端部和芯片载体的前边缘正交。半导体芯片在芯片载体上的倾斜安装允许透镜组件靠近芯片载体的边缘放置，并且被移动以进行光轴调整而不会撞击芯片载体。

2. 发明授权

US08630516B2 Semiconductor optical function device 有权
标题翻译：半导体光学功能器件
公开(公告)号：US08630516B2
公开(公告)日：2014-01-14
申请号：US12556083
申请日：2009-09-09
申请人： Koji Yamada , Munechika Kubota , Tomonori Shimamura
发明人： Koji Yamada , Munechika Kubota , Tomonori Shimamura
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , H01S5/026 , H01S5/0265 , H01S5/0425 , H01S5/101 , H01S5/12 , H01S5/2213 , H01S5/2231 , H01S5/3211
摘要： A semiconductor optical function device includes a semiconductor substrate having a substrate edge surface; an optical waveguide formed on the semiconductor substrate; a non-waveguide region formed on the semiconductor substrate between the optical waveguide and the substrate edge surface; and an insulation region disposed around the optical waveguide and having a semiconductor interface contacting with the non-waveguide region on a side of the substrate edge surface. The semiconductor interface extends not in parallel to the substrate edge surface, and is inclined relative to the substrate edge surface by a specific angle.
摘要翻译：半导体光学功能元件包括具有基板边缘表面的半导体基板; 形成在所述半导体基板上的光波导; 在所述光波导和所述基板边缘表面之间形成在所述半导体基板上的非波导区域; 以及绝缘区域，设置在所述光波导周围，并具有与所述基板边缘表面侧的所述非波导区域接触的半导体界面。半导体界面不与基板边缘表面平行延伸，并且相对于基板边缘表面倾斜特定角度。

3. 发明授权

US08277131B2 Semiconductor optical communication module and manufacturing method thereof 有权
公开(公告)号：US08277131B2
公开(公告)日：2012-10-02
申请号：US12659967
申请日：2010-03-26
申请人： Munechika Kubota , Koji Yamada , Keizo Takemasa , Tomonori Shimamura , Satoshi Sasaki , Xiang Yu , Kouyu Moriya , Takashi Sugiyama
发明人： Munechika Kubota , Koji Yamada , Keizo Takemasa , Tomonori Shimamura , Satoshi Sasaki , Xiang Yu , Kouyu Moriya , Takashi Sugiyama
IPC分类号： G02B6/36
CPC分类号： G02B6/4207 , G02B6/12004 , G02B6/4204 , G02B6/4279 , G02B2006/12119 , H01L24/48 , H01L2224/48 , H01L2924/00014 , H01L2924/12043 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01S5/0064 , H01S5/02276 , H01S5/02284 , H01S5/02415 , H01S5/0265 , H01S5/06226 , H01S5/101 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor optical communication module includes a semiconductor chip mounted on a chip carrier and a lens assembly having an end parallel to and facing the front edge of the chip carrier. The semiconductor chip has a front facet oriented at an acute angle to the front edge of the chip carrier. An optical waveguide in the semiconductor chip transmits an optical signal that propagates on an optical axis extending from the front facet of the semiconductor chip to the end of the lens assembly. The optical axis is orthogonal to the end of the lens assembly and the front edge of the chip carrier. The angled mounting of the semiconductor chip on the chip carrier allows the lens assembly to be placed close to the edge of the chip carrier, and to be moved for optical axis adjustment without striking the chip carrier.

4. 发明申请

US20070127534A1 Complex optical device 审中-公开
标题翻译：复杂光器件
公开(公告)号：US20070127534A1
公开(公告)日：2007-06-07
申请号：US11633491
申请日：2006-12-05
申请人： Tomonori Shimamura , Munechika Kubota , Koji Yamada
发明人： Tomonori Shimamura , Munechika Kubota , Koji Yamada
IPC分类号： H01S3/10 , H01S5/00
CPC分类号： H01S5/0265 , H01S5/0422 , H01S5/204 , H01S5/2213 , H01S5/2231
摘要： The present invention provides a complex optical device capable of decreasing electric power consumption, generating a high quality laser, and modulating the laser without degradation. The complex optical device includes a laser diode element (LD) and an electroabsorption modulator element (EAM) which are formed on the same substrate and optically coupled with each other. Both of the LD and the EAM are formed from a semiconductive upper cladding layer having a first conductive type, an insulating core layer, and a semiconductive lower cladding layer having a second conductive type opposite to the first conductive type. The electrical isolation layer extending through the core layer from the surface of the upper cladding layer up to the surface of the substrate is formed by an ion injection at an area between the LD and the EAM to isolate the LD and the EAM electrically. The ion injection does not optically have an influence on the insulating core layer through which the LD and the EAM are optically coupled with each other.
摘要翻译：本发明提供一种能够降低电力消耗，产生高质量激光，并且不劣化地调制激光的复合光学器件。复合光学器件包括激光二极管元件（LD）和电吸收调制元件（EAM），其形成在相同的衬底上并彼此光学耦合。 LD和EAM都由具有第一导电类型，绝缘芯层和具有与第一导电类型相反的第二导电类型的半导体下包层的半导体上包层形成。通过在LD和EAM之间的区域处的离子注入，形成从上覆层的表面延伸穿过芯层的电隔离层直到衬底的表面，以电隔离LD和EAM。离子注入不会光学地影响LD和EAM彼此光学耦合的绝缘芯层。

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