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1. 发明授权

US08933612B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic instrument 有权
标题翻译：表面声波谐振器，表面声波振荡器和电子仪器
公开(公告)号：US08933612B2
公开(公告)日：2015-01-13
申请号：US13460149
申请日：2012-04-30
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03H9/25 , H03H9/02 , H03H9/145
CPC分类号： H03H9/25 , H03B5/326 , H03H9/02551 , H03H9/0296 , H03H9/02992 , H03H9/14538 , H03H9/14594
摘要： A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 41.9°≦|ψ|≦49.57°), includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is λ, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is η, and an electrode film thickness of the IDT is H, λ, G, η and H satisfy the relationship of 0
摘要翻译：一种SAW谐振器，其使用具有欧拉角（-1.5°＆nlE;＆amp;＆ll; 1.5°，117°＆nlE;＆Thetas;＆nlE; 142°和41.9°＆nlE; |ψ|＆nlE; 49.57°）的石英晶体衬底包括激励停止带上端模式SAW的IDT以及设置在构成IDT的电极指之间的电极间槽指槽。当SAW的波长为λ时，电极指槽的第一深度为G，IDT的线占有率为eEgr，IDT的电极膜厚度为H，λ，G，eegr; 和H满足0

2. 发明授权

US08773214B2 Saw device, saw oscillator, and electronic apparatus 失效
标题翻译：锯设备，锯片振荡器和电子设备
公开(公告)号：US08773214B2
公开(公告)日：2014-07-08
申请号：US13557748
申请日：2012-07-25
申请人： Kunihito Yamanaka , Naohisa Obata
发明人： Kunihito Yamanaka , Naohisa Obata
IPC分类号： H03B5/30
CPC分类号： H03B5/326 , H01L41/053 , H01L2224/05554 , H01L2224/48091 , H01L2224/73265 , H01L2924/16195 , H03H9/02897 , H03H9/058 , H03H9/0585 , H03H9/25 , H01L2924/00014
摘要： A SAW device includes a SAW chip formed of a piezoelectric substrate and an IDT formed thereon, a base substrate that supports the SAW chip, and a fixing member that fixes the SAW chip to the base substrate. The SAW chip that forms a cantilever is supported by the base substrate via the fixing member in a position where the IDT does not overlap with the fixing member in a plan view of the SAW chip. The length W of the SAW chip in a y-axis direction and the length D of the fixing member in the y-axis direction satisfy 1
摘要翻译： SAW器件包括由压电基片和形成在其上的IDT形成的SAW芯片，支撑SAW芯片的基底基板和将SAW芯片固定到基底基板的固定部件。形成悬臂的SAW芯片在SAW芯片的平面图中，通过固定部件被支撑在IDT与固定部件不重叠的位置的基底基板上。 SAW芯片在y轴方向上的长度W和固定构件在y轴方向上的长度D满足1

3. 发明授权

US08305162B2 Surface acoustic wave resonator and surface acoustic wave oscillator 有权
标题翻译：表面声波谐振器和声表面波振荡器
公开(公告)号：US08305162B2
公开(公告)日：2012-11-06
申请号：US12712275
申请日：2010-02-25
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03H9/00 , H01L41/047
CPC分类号： H03H9/02551 , H03H9/0274
摘要： A surface acoustic wave resonator includes: an IDT which is disposed on a quartz crystal substrate with an Euler angle of (−1.5°≦φ≦1.5°, 117°≦θ≦142°, 41.9°≦|ψ|≦49.57°) and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove formed by recessing the quartz crystal substrate between electrode fingers of the IDT, wherein the following expression: 0.01λ≦G where λ represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove, is satisfied and when a line occupancy of the IDT is η, the depth of the inter-electrode-finger groove G and the line occupancy η are set to satisfy the following expression: −2.5×G/λ+0.675≦η≦−2.5×G/λ+0.775.
摘要翻译：表面声波谐振器包括：IDT，其设置在具有欧拉角（-1.5°＆amp; n1E; 1.5°，117°＆nlE;＆amp; Thetas; nlE; 142°，41.9°＆amp; nlE）的石英晶体基板上; |ψ|＆nlE; 49.57°），并且激发停止带的上部模式中的表面声波; 以及通过使IDT的电极指之间的石英晶体基板凹陷而形成的电极间槽，其特征在于，具有以下表达式：0.01λ＆nlE; G，其中，λ表示声表面波的波长，G表示相互之间的深度，电极指槽，并且当IDT的线占有率为“e”时，电极间槽G的深度和线占有率eegr; 设定为满足以下表达式：-2.5×G /λ+ 0.675＆nlE;＆eegr;＆nlE; -2.5×G /λ+ 0.775。

4. 发明授权

US08299680B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit 有权
标题翻译：表面声波谐振器，表面声波振荡器和表面声波模块单元
公开(公告)号：US08299680B2
公开(公告)日：2012-10-30
申请号：US13124980
申请日：2009-10-22
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H01L41/04 , H03H9/64 , H03B5/30
CPC分类号： H03H9/02551 , H03H9/0547 , H03H9/1071
摘要： It is possible to reduce the size of a surface acoustic wave resonator by enhancing the Q value. In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, a line occupying ratio is defined as a value obtained by dividing the width of one electrode finger by the distance between the center lines of the gaps between one electrode finger and the electrode fingers adjacent to both sides thereof, and the IDT includes a region formed by gradually changing the line occupying ratio from the center to both edges so that the frequency gradually becomes lower from the center to both edges than the frequency at the center of the IDT.
摘要翻译：可以通过提高Q值来减小声表面波谐振器的尺寸。在晶体基板上形成具有用于激发表面声波的电极指的IDT的表面声波谐振器中，线占有率被定义为通过将一个电极指的宽度除以中心线之间的距离而获得的值一个电极指与电极指的两侧之间的间隙的间隙，并且IDT包括通过逐渐改变从中心到两边的线占有率形成的区域，使得频率从中心逐渐变低到两边比IDT中心的频率。

5. 发明申请

US20110199160A1 SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE UNIT 有权
标题翻译：表面声波谐振器，表面声波振荡器和表面声波模块单元
公开(公告)号：US20110199160A1
公开(公告)日：2011-08-18
申请号：US13125255
申请日：2009-10-22
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H01L41/047 , H03B5/30
CPC分类号： H03B5/32 , H03H9/02543 , H03H9/02551 , H03H9/02661 , H03H9/02685 , H03H9/0547 , H03H9/1071 , H03H9/14517 , H03H9/14535 , H03H9/25 , H03H9/643
摘要： It is possible to reduce the size of a surface acoustic wave (SAW) resonator by enhancing a Q value. In a SAW resonator in which an IDT having electrode fingers for exciting SAW is disposed on a crystal substrate, the IDT includes a first region disposed at the center of the IDT and a second region and a third region disposed on both sides of the first region. A frequency is fixed in the first region and a portion in which a frequency gradually decreases as it approaches an edge of the IDT is disposed in the second region and the third region. When the frequency of the first region is Fa, the frequency at an edge of the second region is FbM, and the frequency at an edge of the third region is FcN, the variations in frequency are in the ranges of 0.9815
摘要翻译：可以通过提高Q值来减小表面声波（SAW）谐振器的尺寸。在具有用于激发SAW的电极指的IDT设置在晶体基板上的SAW谐振器中，IDT包括设置在IDT的中心的第一区域和设置在第一区域两侧的第二区域和第三区域。频率固定在第一区域中，并且随着其接近IDT的边缘，频率逐渐减小的部分被布置在第二区域和第三区域中。当第一区域的频率为Fa时，第二区域的边缘处的频率为FbM，并且第三区域的边缘处的频率为FcN，频率的变化范围为0.9815

6. 发明授权

US08760033B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic instrument 有权
公开(公告)号：US08760033B2
公开(公告)日：2014-06-24
申请号：US12713461
申请日：2010-02-26
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03H9/25
摘要： A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|105|≦49.57°, includes an IDT which excites a stop band upper end mode SAW, and grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, wherein, when the wavelength of the SAW is λ and the depth of the inter-electrode finger grooves is G, λ and G satisfy the relationship of 0.01λ≦G and wherein, when the line occupation rate of the IDT is η, the groove depth G and line occupation rate η satisfy the relationships of −2.0000×G/λ+0.7200≦η≦−2.5000×G/λ+0.7775 provided that 0.0100λ≦G≦0.0500λ, −3.5898×G/λ+0.7995≦η≦−2.5000+G/λ+0.7775 provided that 0.0500λ

7. 发明授权

US08692439B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic device 有权
标题翻译：表面声波谐振器，表面声波振荡器和电子设备
公开(公告)号：US08692439B2
公开(公告)日：2014-04-08
申请号：US13212801
申请日：2011-08-18
申请人： Takuya Owaki , Kunihito Yamanaka
发明人： Takuya Owaki , Kunihito Yamanaka
IPC分类号： H03H9/145 , H03H9/25 , H03H9/19 , H03H9/00
CPC分类号： H03H9/0542 , H03H9/02551 , H03H9/02661 , H03H9/02897
摘要： A surface acoustic wave resonator has a quartz crystal substrate having Euler angles of (φ=0°, 110°≦θ≦150°, 88°≦ψ≦92°) and an IDT having a plurality of electrode fingers disposed on the quartz crystal substrate, and using a surface acoustic wave as an excitation wave, a plurality of grooves arranged in a propagation direction of the surface acoustic wave to form stripes is disposed on the quartz crystal substrate, and the electrode fingers are disposed one of between the grooves and inside the grooves.
摘要翻译：表面声波谐振器具有石英晶体基板，其具有欧拉角（＆amp; 0°，110°＆amp; n1E;＆amp; The; n1E; 150°，88°＆amp; nlE;ψ＆nlE; 92°）和具有多个电极指设置在石英晶体基板上，并且使用表面声波作为激发波，在石英晶体基板上设置沿声表面波的传播方向排列形成条纹的多个槽，并且电极指一个在凹槽之间和凹槽内。

8. 发明授权

US08680743B2 Surface acoustic wave device, electronic apparatus, and sensor apparatus 有权
公开(公告)号：US08680743B2
公开(公告)日：2014-03-25
申请号：US13223363
申请日：2011-09-01
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03H9/145 , H03H9/25 , H03H9/19 , H03H9/00
摘要： A SAW device 11 has an IDT which is provided on the principal surface of a quartz crystal substrate 12 having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°) and excites a SAW in a stopband upper end mode, and a pair of reflectors which are arranged on both sides of the IDT. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT, and inter-conductor-strip grooves are recessed between the conductor strips of the reflectors. The wavelength λ of the SAW and the depth G of the inter-electrode-finger grooves satisfy 0.01λ≦G. An IDT line occupancy η and the depth G of the inter-electrode-finger grooves satisfy a predetermined relational expression. The IDT line occupancy η and a reflector line occupancy ηr satisfy the relationship η

9. 发明授权

US08598766B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus 有权
标题翻译：表面声波谐振器，表面声波振荡器和电子设备
公开(公告)号：US08598766B2
公开(公告)日：2013-12-03
申请号：US13310123
申请日：2011-12-02
申请人： Takuya Owaki , Kunihito Yamanaka , Keigo Iizawa , Kenichi Hano
发明人： Takuya Owaki , Kunihito Yamanaka , Keigo Iizawa , Kenichi Hano
IPC分类号： H01L41/09
CPC分类号： H01L41/047 , H03H9/02551 , H03H9/0542 , H03H9/1071 , H03H9/14538 , H03H9/14558 , H03H9/14594
摘要： A surface acoustic wave resonator includes a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|Ψ|≦49.57°), and an IDT provided on the quartz crystal substrate that includes a plurality of electrode fingers and excites a stop band upper end mode surface acoustic wave. Inter-electrode finger grooves are provided between the electrode fingers. If a line occupation rate of the convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is ηg, and a line occupation rate of the electrode fingers disposed on the convex portions is ηe, ηg>ηe and 0.59
摘要翻译：表面声波谐振器包括具有欧拉角（-1.5°@ phi @ 1.5°，117°@ @ 142°和42.79°@ | Psi | @ 49.57°）的石英晶体基板，以及设置在石英晶体基板，其包括多个电极指并且激发阻带上端模式声表面波。在电极指之间设置有电极间的指槽。如果设置在电极间槽之间的石英晶体基板的凸部的线占有率为etag，并且设置在凸部上的电极指的线占有率为etae，et et et al。当IDT的有效线占用率等级为线占有率etag的算术平均值和线占有率etae时，满足0.73。

10. 发明申请

US20110204984A1 SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND SURFACE ACOUSTIC WAVE MODULE UNIT 有权
标题翻译：表面声波谐振器，表面声波振荡器和表面声波模块单元
公开(公告)号：US20110204984A1
公开(公告)日：2011-08-25
申请号：US13124980
申请日：2009-10-22
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03B5/30
CPC分类号： H03H9/02551 , H03H9/0547 , H03H9/1071
摘要： It is possible to reduce the size of a surface acoustic wave resonator by enhancing the Q value. In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, a line occupying ratio is defined as a value obtained by dividing the width of one electrode finger by the distance between the center lines of the gaps between one electrode finger and the electrode fingers adjacent to both sides thereof, and the IDT includes a region formed by gradually changing the line occupying ratio from the center to both edges so that the frequency gradually becomes lower from the center to both edges than the frequency at the center of the IDT.
摘要翻译：可以通过提高Q值来减小声表面波谐振器的尺寸。在晶体基板上形成具有用于激发表面声波的电极指的IDT的表面声波谐振器中，线占有率被定义为通过将一个电极指的宽度除以中心线之间的距离而获得的值一个电极指与电极指的两侧之间的间隙的间隙，并且IDT包括通过逐渐改变从中心到两边的线占有率形成的区域，使得频率从中心逐渐变低到两边比IDT中心的频率。

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