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1. 发明授权

US08952596B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic instrument 有权
标题翻译：表面声波谐振器，表面声波振荡器和电子仪器
公开(公告)号：US08952596B2
公开(公告)日：2015-02-10
申请号：US12713461
申请日：2010-02-26
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03H9/25 , H03H9/145 , H03H9/02
CPC分类号： H03H9/25 , H03B5/326 , H03H9/02551 , H03H9/0296 , H03H9/02992 , H03H9/14538 , H03H9/14594
摘要： A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 42.79°≦|105|≦49.57°, includes an IDT which excites a stop band upper end mode SAW, and grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, wherein, when the wavelength of the SAW is λ and the depth of the inter-electrode finger grooves is G, λ and G satisfy the relationship of 0.01λ≦G and wherein, when the line occupation rate of the IDT is η, the groove depth G and line occupation rate η satisfy the relationships of −2.0000×G/λ+0.7200≦η≦−2.5000×G/λ+0.7775 provided that 0.0100λ≦G≦0.0500λ, −3.5898×G/λ+0.7995≦η≦−2.5000+G/λ+0.7775 provided that 0.0500λ
摘要翻译：一种SAW谐振器，其使用具有欧拉角（-1.5°＆amp; nlE; 1.5°，117°＆nl;; Thetas; nlE; 142°和42.79°＆nlE; | 105 |＆amp; 49.57°的石英晶体衬底，包括激发阻挡带上端模式SAW的IDT以及位于构成IDT的电极指之间的基板中的凹槽，其中，当SAW的波长为λ且电极间的指槽的深度为G ，λ和G满足0.01λ＆nlE; G的关系，其中，当IDT的线占有率为eEgr时，沟槽深度G和线占有率eegr满足-2.0000×G /λ+ 0.7200＆nlE的关系 ;＆eegr;＆nlE; -2.5000×G /λ+ 0.7775，条件是0.0100λ＆NlE; G＆nlE;0.0500λ，-3.5898×G /λ+ 0.7995＆nlE;＆eegr＆nlE; -2.5000 + G /λ+ 0.7775，条件是0.0500λ< G＆nlE;0.0695λ。

2. 发明授权

US08928432B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus 有权
标题翻译：表面声波谐振器，表面声波振荡器和电子设备
公开(公告)号：US08928432B2
公开(公告)日：2015-01-06
申请号：US13212714
申请日：2011-08-18
申请人： Takuya Owaki , Keigo Iizawa , Kunihito Yamanaka
发明人： Takuya Owaki , Keigo Iizawa , Kunihito Yamanaka
IPC分类号： H03H9/25 , H03H9/64 , H03B5/32 , H03H9/02 , H03H9/05 , H03H9/145
CPC分类号： H03H9/02551 , H03B5/326 , H03H9/02661 , H03H9/0542 , H03H9/14538
摘要： A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (−1°≦φ≦1°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°), which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied: 0.01λ≦G (1), where λ represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy η of the IDT satisfy the following expression: - 2.5 × G λ + 0.675 ≦ η ≦ - 2.5 × G λ + 0.775 ( 5 ) and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression: 160≦N≦220 (19).
摘要翻译：表面声波谐振器包括：设置在石英基板上的IDT，欧拉角为（-1°＆amp; nlE;＆amp; nlE; 1°，117°＆nlE;＆Thetas;＆nlE; 142°，42.79°＆nlE; |ψ |和nlE; 49.57°），其由Al或包含Al作为主要成分的合金制成，并且在阻带的上部模式中激发表面声波; 以及通过在形成IDT的电极指之间使石英衬底凹陷而形成的电极间指状槽。这里，满足以下表达式：0.01λ＆nlE; G（1）其中λ表示声表面波的波长，G表示电极间指槽的深度。电极指槽的深度G和线占有率eegr; 的IDT满足以下表达式： - 2.5×Gλ+ 0.675＆nlE; ＆eegr ＆nlE; - 2.5×Gλ+ 0.775（5），IDT中的电极指数对N数在下式的范围内：160＆nlE; N＆nlE; 220（19）。

3. 发明授权

US08760034B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic instrument 有权
公开(公告)号：US08760034B2
公开(公告)日：2014-06-24
申请号：US13460149
申请日：2012-04-30
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03H9/25
摘要： A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 41.9°≦|ψ|≦49.57°), includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is λ, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is η, and an electrode film thickness of the IDT is H, λ, G, η and H satisfy the relationship of 0

4. 发明授权

US08736140B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module device 有权
标题翻译：表面声波谐振器，表面声波振荡器和声表面波模块装置
公开(公告)号：US08736140B2
公开(公告)日：2014-05-27
申请号：US13305880
申请日：2011-11-29
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03H9/25
CPC分类号： H03H9/14547 , H03H9/02551 , H03H9/0547 , H03H9/1092
摘要： A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer (IDT) that includes electrode fingers exciting a surface acoustic wave on the piezoelectric substrate, a first region at a center of the IDT, and a second region and a third region at opposite sides of the IDT. In the IDT, a line occupation rate at which an electromechanical coupling coefficient becomes a maximum is different from the line occupation rate at which reflection of the surface acoustic wave becomes a maximum.
摘要翻译：声表面波谐振器包括压电基片和叉指式换能器（IDT），其包括激励压电基片上的表面声波的电极指，IDT中心的第一区域和相对的第三区域 IDT的两边。在IDT中，机电耦合系数变为最大的线占有率与表面声波的反射成为最大的线占有率不同。

5. 发明授权

US08723396B2 Surface acoustic wave device, electronic apparatus, and sensor apparatus 有权
标题翻译：声表面波装置，电子仪器和传感器装置
公开(公告)号：US08723396B2
公开(公告)日：2014-05-13
申请号：US13223581
申请日：2011-09-01
申请人： Kunihito Yamanaka , Takuya Owaki , Naohisa Obata
发明人： Kunihito Yamanaka , Takuya Owaki , Naohisa Obata
IPC分类号： H03H9/25
CPC分类号： H03H9/14594 , H03H9/02551 , H03H9/0542
摘要： A SAW device has an IDT which is provided on the principal surface of a quartz crystal sustrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, ψ) and excites a SAW in a stopband upper end mode. Inter-electrode-finger grooves 8 are recessed between the electrode fingers of the IDT. When the Euler angle ψ is 42.79°≦|ψ|≦49.57°, the thickness H of the electrode fingers of the IDT is set to be within 0.055 μm≦H≦0.335 μm, preferably, 0.080 μm≦H≦0.335 μm. When the Euler angle ψ is |ψ|≠90°×n (where n=0, 1, 2, 3), and the thickness H of the electrode fingers is set to 0.05 μm≦H≦0.20 μm.
摘要翻译： SAW器件具有IDT，其设置在具有欧拉角（-1.5°＆amp; nlE;＆amp; nlE; 1.5°，117°＆nlE;＆amp; Thetas;＆amp; 142°，ψ）的石英晶体的主表面上，并且激发a SAW在阻带上端模式。电极指状槽8在IDT的电极指之间凹陷。当欧拉角ψ为42.79°＆nlE; |ψ|＆nlE; 49.57°时，IDT的电极指的厚度H设定为0.055μm＆lt; NlE; H＆lt; ll;0.335μm，优选为0.080μm＆amp; NlE; H＆。当欧拉角ψ为|ψ|≠90°×n（其中n = 0,1,2,3）时，电极指的厚度H设定为0.05μm＆nlE; H＆lt; ll;0.20μm。

6. 发明授权

US08723393B2 Surface acoustic wave device, electronic apparatus, and sensor apparatus 有权
标题翻译：声表面波装置，电子仪器和传感器装置
公开(公告)号：US08723393B2
公开(公告)日：2014-05-13
申请号：US13223363
申请日：2011-09-01
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H03H9/145 , H03H9/25 , H03H9/19 , H03H9/00
CPC分类号： H03H9/02551 , H03H9/02661 , H03H9/02834 , H03H9/14594
摘要： A SAW device 11 has an IDT which is provided on the principal surface of a quartz crystal substrate 12 having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°) and excites a SAW in a stopband upper end mode, and a pair of reflectors which are arranged on both sides of the IDT. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT, and inter-conductor-strip grooves are recessed between the conductor strips of the reflectors. The wavelength λ of the SAW and the depth G of the inter-electrode-finger grooves satisfy 0.01λ≦G. An IDT line occupancy η and the depth G of the inter-electrode-finger grooves satisfy a predetermined relational expression. The IDT line occupancy η and a reflector line occupancy ηr satisfy the relationship η
摘要翻译： SAW器件11具有设置在具有欧拉角（-1.5°＆amp; nlE; 1.5°，117°＆amp; nlE; 1.5m）的石英晶体基板12的主表面上的IDT， ; |ψ|＆nlE; 49.57°）并激励阻带上端模式的SAW，以及布置在IDT两侧的一对反射器。电极指状槽在IDT的电极指之间凹陷，并且导体间条状凹槽凹陷在反射器的导体条之间。 SAW的波长λ和电极指间槽的深度G满足0.01λ＆nlE; G。 IDT线路占用率并且电极指间槽的深度G满足预定的关系式。 IDT线路占用率并且反射器线占有率满足关系＆eegr; <＆eegr; r。因此，能够同时实现工作温度范围内的优异的频率温度特性和高Q值。

7. 发明授权

US08471434B2 Surface acoustic wave device, surface acoustic wave oscillator, and electronic apparatus 有权
标题翻译：表面声波装置，表面声波振荡器和电子装置
公开(公告)号：US08471434B2
公开(公告)日：2013-06-25
申请号：US13212725
申请日：2011-08-18
申请人： Takuya Owaki , Kunihito Yamanaka
发明人： Takuya Owaki , Kunihito Yamanaka
IPC分类号： H01L41/08
CPC分类号： H03H9/0542 , H01L2224/05554 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2924/16195 , H03H9/02551 , H03H9/02614 , H03H9/02834 , H03H9/0585 , H03H9/1071 , H03H9/14538 , H01L2924/00014
摘要： A surface acoustic wave device includes: a quartz substrate with Euler angles of (φ, θ, ψ); and an IDT which excites a surface acoustic wave in an upper mode of a stop band; wherein, the Euler angle φ is −60°≦φ≦60°, and the Euler angle φ determines the ranges of the Euler angles θ and ψ.
摘要翻译：表面声波装置包括：具有（phi，θ，psi）的欧拉角的石英基板; 以及激励停止带的上部模式中的表面声波的IDT; 其中欧拉角φi为-60°@ 60°，欧拉角φi确定欧拉角θ和psi的范围。

8. 发明申请

US20130027144A1 SAW DEVICE, SAW OSCILLATOR, AND ELECTRONIC APPARATUS 失效
标题翻译： SAW器件，SAW振荡器和电子设备
公开(公告)号：US20130027144A1
公开(公告)日：2013-01-31
申请号：US13557748
申请日：2012-07-25
申请人： Kunihito YAMANAKA , Naohisa OBATA
发明人： Kunihito YAMANAKA , Naohisa OBATA
IPC分类号： H03B5/32 , H01L41/04
CPC分类号： H03B5/326 , H01L41/053 , H01L2224/05554 , H01L2224/48091 , H01L2224/73265 , H01L2924/16195 , H03H9/02897 , H03H9/058 , H03H9/0585 , H03H9/25 , H01L2924/00014
摘要： A SAW device includes a SAW chip formed of a piezoelectric substrate and an IDT formed thereon, a base substrate that supports the SAW chip, and a fixing member that fixes the SAW chip to the base substrate. The SAW chip that forms a cantilever is supported by the base substrate via the fixing member in a position where the IDT does not overlap with the fixing member in a plan view of the SAW chip. The length W of the SAW chip in a y-axis direction and the length D of the fixing member in the y-axis direction satisfy 1
摘要翻译： SAW器件包括由压电基片和形成在其上的IDT形成的SAW芯片，支撑SAW芯片的基底基板和将SAW芯片固定到基底基板的固定部件。形成悬臂的SAW芯片在SAW芯片的平面图中，通过固定部件被支撑在IDT与固定部件不重叠的位置的基底基板上。 1.6μm，SAW芯片在y轴方向上的长度W和固定构件在y轴方向上的长度D满足1

9. 发明授权

US08344815B2 Surface acoustic wave resonator, surface acoustic wave oscillator, and surface acoustic wave module unit 有权
标题翻译：表面声波谐振器，表面声波振荡器和表面声波模块单元
公开(公告)号：US08344815B2
公开(公告)日：2013-01-01
申请号：US13125239
申请日：2009-10-22
申请人： Kunihito Yamanaka
发明人： Kunihito Yamanaka
IPC分类号： H01L41/04 , H03H9/64 , H03B5/30
CPC分类号： H03H9/02551 , H03H9/0547 , H03H9/14517 , H03H9/14555 , H03H9/1457 , H03H9/14582 , H03H9/25 , H03H9/643
摘要： In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, the line occupying ratio causing the maximum electromechanical coupling coefficient and the line occupying ratio causing the maximum reflection of the surface acoustic waves in the IDT are different from each other, the center of the IDT has the line occupying ratio causing an increase in electromechanical coupling coefficient in comparison with the edges of the IDT, and the edges of the IDT have the line occupying ratio causing an increase in reflection of the surface acoustic waves in comparison with the center of the IDT.
摘要翻译：在晶体基板上形成具有用于激发表面声波的电极指的IDT的表面声波谐振器中，导致最大机电耦合系数和线占有率的线占有率导致表面声波的最大反射 IDT彼此不同，IDT的中心具有与IDT的边缘相比机电耦合系数增加的线占有率，并且IDT的边缘具有导致反射增加的线占有率的表面声波与IDT的中心相比。

10. 发明申请

US20120062070A1 SURFACE ACOUSTIC WAVE DEVICE, ELECTRONIC APPARATUS, AND SENSOR APPARATUS 有权
标题翻译：表面声波装置，电子装置和传感器装置
公开(公告)号：US20120062070A1
公开(公告)日：2012-03-15
申请号：US13223581
申请日：2011-09-01
申请人： Kunihito YAMANAKA , Takuya OWAKI , Naohisa OBATA
发明人： Kunihito YAMANAKA , Takuya OWAKI , Naohisa OBATA
IPC分类号： H01L41/04
CPC分类号： H03H9/14594 , H03H9/02551 , H03H9/0542
摘要： A SAW device has an IDT which is provided on the principal surface of a quartz crystal sustrate having Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦42°, ψ) and excites a SAW in a stopband upper end mode. Inter-electrode-finger grooves 8 are recessed between the electrode fingers of the IDT. When the Euler angle ψ is 42.79°≦|ψ|≦49.57°, the thickness H of the electrode fingers of the IDT is set to be within 0.055 μm≦H≦0.335 μm, preferably, 0.080 μm≦H≦0.335 μm. When the Euler angle ψ is |ψ|≠90°×n (where n=0, 1, 2, 3), and the thickness H of the electrode fingers is set to 0.05 μm≦H≦0.20 μm.
摘要翻译： SAW器件具有设置在具有欧拉角（-1.5°＆nlE;＆amp;＆ls; 1.5°，117°＆nlE;＆amp; thetas;＆amp; 42°，ψ）的石英晶体的主表面上的IDT，并且激发a SAW在阻带上端模式。电极指状槽8在IDT的电极指之间凹陷。当欧拉角ψ为42.79°＆nlE; |ψ|＆nlE; 49.57°时，IDT的电极指的厚度H设定为0.055μm＆lt; NlE; H＆lt; ll;0.335μm，优选为0.080μm＆amp; NlE; H＆。当欧拉角ψ为|ψ|≠90°×n（其中n = 0,1,2,3）时，电极指的厚度H设定为0.05μm＆nlE; H＆lt; ll;0.20μm。

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