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    • 1. 发明授权
    • Single-power-transistor battery-charging circuit using voltage-boosted clock
    • 使用升压时钟的单功率晶体管电池充电电路
    • US07999512B2
    • 2011-08-16
    • US12336514
    • 2008-12-16
    • Kwok Kuen David KwongYat To William WongHo Ming Karen WanChik Wai David Ng
    • Kwok Kuen David KwongYat To William WongHo Ming Karen WanChik Wai David Ng
    • H02J7/00
    • H02J7/0031
    • A charge/discharge protection circuit protects a battery from inadvertent shorting on a charger node that can connect to a charger or to a power supply of a portable electronic device. A single n-channel power transistor has a gate that controls a channel between the battery and the charger node. The gate is connected to the charger node by a gate-coupling transistor to turn off the power transistor, providing battery isolation. The gate is driven by a voltage-boosted clock through a switch activated by an enable signal. The enable signal also activates a grounding transistor to ground a gate of the gate-coupling transistor. A comparator compares voltages of the charger and battery nodes, and the compare output is latched to generate the enable signal. An inverse enable signal activates a second switch that drives the voltage-boosted clock to the gate of the gate-coupling transistor to turn off the power transistor.
    • 充电/放电保护电路可保护电池免受可连接到充电器或便携式电子设备的电源的充电器节点上的意外短路。 单个n沟道功率晶体管具有控制电池和充电器节点之间的通道的栅极。 门通过栅极耦合晶体管连接到充电器节点,以关闭功率晶体管,从而提供电池隔离。 门通过由使能信号激活的开关由升压时钟驱动。 使能信号还激活接地晶体管以对栅极耦合晶体管的栅极接地。 比较器比较充电器和电池节点的电压,并且比较输出被锁存以产生使能信号。 反向使能信号激活第二开关,其将升压电压的时钟驱动到栅极耦合晶体管的栅极以截止功率晶体管。
    • 2. 发明授权
    • Single-power-transistor battery-charging circuit using voltage-boosted clock
    • 使用升压时钟的单功率晶体管电池充电电路
    • US08643337B2
    • 2014-02-04
    • US13179107
    • 2011-07-08
    • Kwok Kuen David KwongYat To William WongHo Ming Karen WanChik Wai David Ng
    • Kwok Kuen David KwongYat To William WongHo Ming Karen WanChik Wai David Ng
    • H02J7/00
    • H02J7/0031
    • A charge/discharge protection circuit protects a battery from inadvertent shorting on a charger node that can connect to a charger or to a power supply of a portable electronic device. A single n-channel power transistor has a gate that controls a channel between the battery and the charger node. The gate is connected to the charger node by a gate-coupling transistor to turn off the power transistor, providing battery isolation. The gate is driven by a voltage-boosted clock through a switch activated by an enable signal. The enable signal also activates a grounding transistor to ground a gate of the gate-coupling transistor. A comparator compares voltages of the charger and battery nodes, and the compare output is latched to generate the enable signal. An inverse enable signal activates a second switch that drives the voltage-boosted clock to the gate of the gate-coupling transistor to turn off the power transistor.
    • 充电/放电保护电路可保护电池免受可连接到充电器或便携式电子设备的电源的充电器节点上的意外短路。 单个n沟道功率晶体管具有控制电池和充电器节点之间的通道的栅极。 门通过栅极耦合晶体管连接到充电器节点,以关闭功率晶体管,从而提供电池隔离。 门通过由使能信号激活的开关由升压时钟驱动。 使能信号还激活接地晶体管以对栅极耦合晶体管的栅极接地。 比较器比较充电器和电池节点的电压,并且比较输出被锁存以产生使能信号。 反向使能信号激活第二开关,其将升压电压的时钟驱动到栅极耦合晶体管的栅极,以关断功率晶体管。
    • 4. 发明授权
    • Low-voltage oscillator with capacitor-ratio selectable duty cycle
    • 具有电容比可选占空比的低压振荡器
    • US07705685B2
    • 2010-04-27
    • US11952127
    • 2007-12-06
    • Chik Wai David NgYat To William WongHo Ming Karen WanKwok Kuen David Kwong
    • Chik Wai David NgYat To William WongHo Ming Karen WanKwok Kuen David Kwong
    • H03B27/00
    • H03K4/501
    • An oscillator operates at a very low voltage yet has a duty cycle that is set by a ratio of capacitors that are charged and discharged. Sub-threshold p-channel transistors conduct sub-threshold currents below the normal threshold voltage, and drive set and reset inputs of a set-reset S-R latch. The S-R latch drives the oscillator outputs. The oscillator outputs feed back to charging p-channel transistors that charge one plate of the capacitors. During half of the cycle, the charging p-channel transistor is off, allowing one plate of the capacitors to discharge through an n-channel discharge transistor. After a period of discharge determined by the capacitance of the capacitor, the gate of a sub-threshold p-channel transistor falls enough for sub-threshold current to flow, triggering the set or reset input of the S-R latch. Since sub-threshold currents are needed to toggle the S-R latch, the oscillator begins to oscillate below the threshold voltage.
    • 振荡器在非常低的电压下工作,但是具有由充电和放电的电容器的比率设定的占空比。 子阈值p沟道晶体管导通低于正常阈值电压的次阈值电流,以及设置复位S-R锁存器的驱动器设置和复位输入。 S-R锁存器驱动振荡器输出。 振荡器输出反馈给对一个电容器板充电的p沟道晶体管。 在半周期中,充电p沟道晶体管截止,允许电容器的一个板通过n沟道放电晶体管放电。 在通过电容器的电容确定的放电周期之后,子阈值p沟道晶体管的栅极对于亚阈值电流流下来足以触发S-R锁存器的置位或复位输入。 由于需要次阈值电流来切换S-R锁存器,所以振荡器开始振荡低于阈值电压。
    • 5. 发明授权
    • Dual-use comparator/op amp for use as both a successive-approximation ADC and DAC
    • 双用比较器/运算放大器用作逐次逼近ADC和DAC
    • US07741981B1
    • 2010-06-22
    • US12345844
    • 2008-12-30
    • Ho Ming Karen WanYat To William WongKwai Chi ChanHok Mo YauTin Ho Andy WuKwok Kuen David Kwong
    • Ho Ming Karen WanYat To William WongKwai Chi ChanHok Mo YauTin Ho Andy WuKwok Kuen David Kwong
    • H03M1/00
    • H03M1/02H03M1/468H03M1/804
    • A re-configurable circuit acts as an Analog-to-Digital Converter (ADC) and as a digital-to-analog converter (DAC). An array of binary-weighted capacitors stores an analog input. Switches connect different capacitors in the array to fixed voltages that cause charge-sharing with a terminal capacitor. The voltage of the terminal capacitor is compared by a re-configurable comparator stage for each different combination of the capacitors. The comparison results are analyzed to determine the closest digital value for the analog input. In DAC mode, the array capacitors are switched based on an input digital value. The switched capacitors connect to a charge-sharing line to generate an analog voltage that is applied to the re-configurable comparator stage. A differential amplifier generates a buffered analog voltage that is fed back to the other input of the re-configurable comparator stage for unity gain. The gain of the re-configurable comparator stage adjusts for ADC and DAC modes.
    • 一个可重新配置的电路充当模数转换器(ADC)和数模转换器(DAC)。 一组二进制加权电容器存储模拟输入。 开关将阵列中的不同电容连接到固定电压,从而与端子电容器进行电荷共享。 对于电容器的每个不同组合,端子电容器的电压通过可重新配置的比较器级进行比较。 分析比较结果以确定模拟输入的最接近的数字值。 在DAC模式下,基于输入数字值切换阵列电容器。 开关电容器连接到电荷共享线路以产生施加到可重新配置的比较器级的模拟电压。 差分放大器产生缓冲的模拟电压,反馈到可重新配置的比较器级的另一个输入以获得单位增益。 可重新配置的比较器级的增益适用于ADC和DAC模式。
    • 7. 发明申请
    • DUAL-USE COMPARATOR/OP AMP FOR USE AS BOTH A SUCCESSIVE-APPROXIMATION ADC AND DAC
    • 双使用比较器/运算放大器,用作两个ADC,DAC和DAC
    • US20100164761A1
    • 2010-07-01
    • US12345844
    • 2008-12-30
    • Ho Ming Karen WanYat To William WongKwai Chi ChanHok Mo YauTin Ho Andy WuKwok Kuen David Kwong
    • Ho Ming Karen WanYat To William WongKwai Chi ChanHok Mo YauTin Ho Andy WuKwok Kuen David Kwong
    • H03M1/02H03M1/12H03M3/02
    • H03M1/02H03M1/468H03M1/804
    • A re-configurable circuit acts as an Analog-to-Digital Converter (ADC) and as a digital-to-analog converter (DAC). An array of binary-weighted capacitors stores an analog input. Switches connect different capacitors in the array to fixed voltages that cause charge-sharing with a terminal capacitor. The voltage of the terminal capacitor is compared by a re-configurable comparator stage for each different combination of the capacitors. The comparison results are analyzed to determine the closest digital value for the analog input. In DAC mode, the array capacitors are switched based on an input digital value. The switched capacitors connect to a charge-sharing line to generate an analog voltage that is applied to the re-configurable comparator stage. A differential amplifier generates a buffered analog voltage that is fed back to the other input of the re-configurable comparator stage for unity gain. The gain of the re-configurable comparator stage adjusts for ADC and DAC modes.
    • 一个可重新配置的电路充当模数转换器(ADC)和数模转换器(DAC)。 一组二进制加权电容器存储模拟输入。 开关将阵列中的不同电容连接到固定电压,从而与端子电容器进行电荷共享。 对于电容器的每个不同组合,端子电容器的电压通过可重新配置的比较器级进行比较。 分析比较结果以确定模拟输入的最接近的数字值。 在DAC模式下,基于输入数字值切换阵列电容器。 开关电容器连接到电荷共享线路以产生施加到可重新配置的比较器级的模拟电压。 差分放大器产生缓冲的模拟电压,反馈到可重新配置的比较器级的另一个输入以获得单位增益。 可重新配置的比较器级的增益适用于ADC和DAC模式。
    • 8. 发明授权
    • Zero-delay buffer with common-mode equalizer for input and feedback differential clocks into a phase-locked loop (PLL)
    • 具有共模均衡器的零延迟缓冲器,用于输入和反馈差分时钟进入锁相环(PLL)
    • US07535272B1
    • 2009-05-19
    • US11944545
    • 2007-11-23
    • Kwok Kuen David KwongHo Ming Karen Wan
    • Kwok Kuen David KwongHo Ming Karen Wan
    • H03L7/06
    • H03L7/081H03L7/0891
    • A zero-delay clock generator has a phase-locked loop (PLL) that generates a feedback clock and receives a reference clocks. All clocks are differential and have a common-mode voltage. The common-mode voltage of an externally-generated reference clock can vary from the common-mode voltage of the internally-generated feedback clock. Differences in common-mode voltage of the reference clock and feedback clock cause delay variations resulting in static phase offsets of generated clocks. A common-mode sense and equalizer senses the common-mode voltages of the buffered reference and feedback clocks, and generates control voltages. The control voltages adjust the common-mode voltage and delay of differential buffers that receive the reference and feedback clocks. The control voltages adjust the differential buffers to match the common-mode voltages of the buffered reference and feedback clocks. The buffered clocks are then applied to a phase and frequency detector of the PLL.
    • 零延迟时钟发生器具有产生反馈时钟并接收参考时钟的锁相环(PLL)。 所有时钟均为差分并具有共模电压。 外部产生的参考时钟的共模电压可以从内部产生的反馈时钟的共模电压变化。 参考时钟和反馈时钟的共模电压差异导致延迟变化,导致产生的时钟的静态相位偏移。 共模感测和均衡器感测缓冲的参考和反馈时钟的共模电压,并产生控制电压。 控制电压调节接收参考和反馈时钟的差分缓冲器的共模电压和延迟。 控制电压调节差分缓冲器以匹配缓冲参考和反馈时钟的共模电压。 缓冲时钟然后被施加到PLL的相位和频率检测器。
    • 9. 发明申请
    • FUSE CELL AND METHOD FOR PROGRAMMING THE SAME
    • 保险丝盒及其编程方法
    • US20090045867A1
    • 2009-02-19
    • US11838051
    • 2007-08-13
    • David Kwok Kuen KwongHo Ming Karen WanKam Chuen WanChik Wai Ng
    • David Kwok Kuen KwongHo Ming Karen WanKam Chuen WanChik Wai Ng
    • H01H85/00
    • G11C17/16Y02P80/30
    • The fuse cell architecture 371 for the presently claimed invention employs a multiple fuse structure 301, 302 architecture in lieu of a single fuse structure. As such, the terminals of these fuse structures that couple to other on-chip devices are always at ground potential throughout the application of programming voltage to the fuse pads 311. This approach overcomes previous single fuse problems owing to the fact that a sufficiently high programming voltage can be applied to blow fuse structures with unexpectedly high resistance without damaging nearby on-chip devices. Furthermore, even if one of the fuse structures 301, 302 possessed an abnormally high resistance which would not be blown under typical conditions, the desired circuit trimming result can still be achieved owing to the blowing of the other fuse structure in the fuse cell 371.
    • 用于当前要求保护的发明的熔丝单元结构371采用多个熔丝结构301,302代替单个熔丝结构。 因此,耦合到其它片上器件的这些熔丝结构的端子在编程电压施加到熔丝焊盘311时始终处于地电位。由于以下事实,该方法克服了先前的单熔丝问题,这是因为足够高的编程 可以施加电压来熔断具有意想不到的高电阻的熔丝结构,而不会损坏附近的片上器件。 此外,即使保险丝结构301,302中的一个具有在典型条件下不会被烧断的异常高电阻,由于熔丝单元371中的另一熔丝结构的吹动,仍然可以实现期望的电路修整结果。
    • 10. 发明授权
    • Fuse cell and method for programming the same
    • 保险丝盒及其编程方法
    • US07538597B2
    • 2009-05-26
    • US11838051
    • 2007-08-13
    • David Kwok Kuen KwongHo Ming Karen WanKam Chuen WanChik Wai Ng
    • David Kwok Kuen KwongHo Ming Karen WanKam Chuen WanChik Wai Ng
    • H03H37/76
    • G11C17/16Y02P80/30
    • The fuse cell architecture 371 for the presently claimed invention employs a multiple fuse structure 301, 302 architecture in lieu of a single fuse structure. As such, the terminals of these fuse structures that couple to other on-chip devices are always at ground potential throughout the application of programming voltage to the fuse pads 311. This approach overcomes previous single fuse problems owing to the fact that a sufficiently high programming voltage can be applied to blow fuse structures with unexpectedly high resistance without damaging nearby on-chip devices. Furthermore, even if one of the fuse structures 301, 302 possessed an abnormally high resistance which would not be blown under typical conditions, the desired circuit trimming result can still be achieved owing to the blowing of the other fuse structure in the fuse cell 371.
    • 用于当前要求保护的发明的熔丝单元结构371采用多个熔丝结构301,302代替单个熔丝结构。 因此,耦合到其它片上器件的这些熔丝结构的端子在编程电压施加到熔丝焊盘311时始终处于地电位。由于以下事实,该方法克服了先前的单熔丝问题,这是因为足够高的编程 可以施加电压来熔断具有意想不到的高电阻的熔丝结构,而不会损坏附近的片上器件。 此外,即使保险丝结构301,302中的一个具有在典型条件下不会被烧断的异常高电阻,由于熔丝单元371中的另一熔丝结构的吹动,仍然可以实现期望的电路修整结果。