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1. 发明授权

US09214784B2 Laser device 有权
标题翻译：激光设备
公开(公告)号：US09214784B2
公开(公告)日：2015-12-15
申请号：US14374696
申请日：2012-03-19
申请人： Kyosuke Kuramoto , Takayuki Yanagisawa , Yoshihito Hirano
发明人： Kyosuke Kuramoto , Takayuki Yanagisawa , Yoshihito Hirano
IPC分类号： H01S3/091 , H01S5/04 , G02F1/377 , H01S3/109 , H01S3/06 , H01S3/0941 , H01S3/16 , H01S3/04 , G02F1/35
CPC分类号： H01S5/041 , G02F1/377 , G02F2001/3509 , H01S3/0401 , H01S3/0405 , H01S3/0612 , H01S3/0615 , H01S3/0621 , H01S3/0625 , H01S3/0627 , H01S3/09415 , H01S3/109 , H01S3/1611 , H01S3/1673 , H01S2301/02
摘要： An end surface 3b of a solid-state laser element 3 is sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surface 4a of a wavelength conversion element 4 is sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surface 3b and the end surface 4b are arranged in such a way as to be opposite to each other.
摘要翻译：固体激光元件3的端面3b以这样的方式倾斜，即假设激光从端面入射到空气上，与端面的内侧垂直的入射角与激光的行进方向基本上与入射面处的布鲁斯特角度匹配，波长转换元件4的端面4a倾斜，假设激光从端面入射到空气上，与激光的行进方向形成的端面的内侧的法线的入射角基本上与入射面处的布鲁斯特角度匹配，端面3b和端面4b以如下方式配置：相互对立。

2. 发明申请

US20150016484A1 LASER DEVICE 有权
标题翻译：激光装置
公开(公告)号：US20150016484A1
公开(公告)日：2015-01-15
申请号：US14374696
申请日：2012-03-19
申请人： Kyosuke Kuramoto , Takayuki Yanagisawa , Yoshihito Hirano
发明人： Kyosuke Kuramoto , Takayuki Yanagisawa , Yoshihito Hirano
IPC分类号： H01S5/04
CPC分类号： H01S5/041 , G02F1/377 , G02F2001/3509 , H01S3/0401 , H01S3/0405 , H01S3/0612 , H01S3/0615 , H01S3/0621 , H01S3/0625 , H01S3/0627 , H01S3/09415 , H01S3/109 , H01S3/1611 , H01S3/1673 , H01S2301/02
摘要： An end surface 3b of a solid-state laser element 3 is sloped in such a way that, assuming that laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, an end surface 4a of a wavelength conversion element 4 is sloped in such a way that, assuming that the laser light is incident upon air from the end surface, an angle of incidence which a normal to an inner side of the end surface forms with a traveling direction of the laser light substantially matches the Brewster angle at the incidence plane, and the end surface 3b and the end surface 4b are arranged in such a way as to be opposite to each other.
摘要翻译：固体激光元件3的端面3b以这样的方式倾斜，即假设激光从端面入射到空气上，与端面的内侧垂直的入射角与激光的行进方向基本上与入射面处的布鲁斯特角度匹配，波长转换元件4的端面4a倾斜，假设激光从端面入射到空气上，与激光的行进方向形成的端面的内侧的法线的入射角基本上与入射面处的布鲁斯特角度匹配，端面3b和端面4b以如下方式配置：相互对立。

3. 发明授权

US09450370B2 Planar waveguide laser device 有权
标题翻译：平面波导激光器件
公开(公告)号：US09450370B2
公开(公告)日：2016-09-20
申请号：US14412566
申请日：2012-12-10
申请人： Hidenori Fukahori , Takayuki Yanagisawa , Kyosuke Kuramoto , Fumio Shoda
发明人： Hidenori Fukahori , Takayuki Yanagisawa , Kyosuke Kuramoto , Fumio Shoda
IPC分类号： H01S3/109 , H01S3/063 , H01S3/08 , H01S5/14 , H01S3/0941 , H01S3/10
CPC分类号： H01S3/109 , H01S3/063 , H01S3/0632 , H01S3/08054 , H01S3/0941 , H01S3/09415 , H01S3/10061 , H01S5/14
摘要： A laser medium 21 is shaped like a plate and has a waveguide structure in a direction of the thickness of a surface thereof perpendicular to the optical axis thereof. A nonlinear material 31 is placed on the optical axis of the laser medium 21 close to the laser medium 21 and has a waveguide structure in the same direction as that of the waveguide structure of the laser medium 21. A ¼ wavelength plate 41 is placed close to one of surfaces, which are perpendicular to the optical axis, of the nonlinear material 31, the one being opposite to a surface close to the laser medium 21.
摘要翻译：激光介质21成形为板状，并且在与其光轴垂直的表面的厚度方向上具有波导结构。将非线性材料31放置在靠近激光介质21的激光介质21的光轴上，并且具有与激光介质21的波导结构相同方向的波导结构。1/4波片41靠近到非线性材料31的垂直于光轴的一个表面，该表面与靠近激光介质21的表面相对。

4. 发明申请

US20110183453A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110183453A1
公开(公告)日：2011-07-28
申请号：US12862829
申请日：2010-08-25
申请人： Misao Hironaka , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki
发明人： Misao Hironaka , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki
IPC分类号： H01L21/18
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/32341
摘要： A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.
摘要翻译：一种半导体器件的制造方法，包括在基板上形成半导体层叠结构，作为包含半导体激光结构的晶片; 在所述晶片的主表面上的所述半导体激光器结构之间形成第一凹槽; 在形成所述第一凹槽之后，将所述晶片分离成激光棒，所述激光棒包括排列成棒状的所述半导体激光结构中的至少两个; 在激光棒的第一槽中形成第二槽，第二槽的宽度不比第一槽宽; 以及将所述激光棒中的一个沿着所述第二凹槽分离成相应的半导体激光器。

5. 发明授权

US07920614B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07920614B2
公开(公告)日：2011-04-05
申请号：US12620627
申请日：2009-11-18
申请人： Kyosuke Kuramoto
发明人： Kyosuke Kuramoto
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/0206 , H01S5/02272 , H01S5/0425 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm−2 or more, a crystalline semiconductor structure located on the substrate and having an active layer, an insulating film located on the semiconductors structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120×L μm2 or less.
摘要翻译：通过减少通过穿透位错部分的电流泄漏，获得具有耐电源浪涌的高静电耐受电压并且具有改善的长期可靠性的半导体激光器。半导体激光器包括具有位错密度为1×10 5 cm -2以上的高位错区域的基板，位于基板上并具有有源层的结晶半导体结构，位于半导体结构上的绝缘膜，表面电极，位于绝缘膜上并与用于将电流注入有源层的半导体结构电连续，以及位于衬底的后表面上的背电极。半导体激光器具有长度为L的激光谐振器，表面电极的面积为120×Lμm2以下。

6. 发明授权

US07796664B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07796664B2
公开(公告)日：2010-09-14
申请号：US12348061
申请日：2009-01-02
申请人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
发明人： Yasuyuki Nakagawa , Harumi Nishiguchi , Kyosuke Kuramoto , Masatsugu Kusunoki , Takeo Shirahama , Yosuke Suzuki , Hiromasu Matsuoka
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/028
摘要： A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of λ/4 with respect to the wavelength λ of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.
摘要翻译： GaN激光器包括在发射激光的前端表面上的涂膜。涂膜包括与前端表面接触的第一绝缘膜和第一绝缘膜上的第二绝缘膜。第二绝缘膜的光学膜厚度相对于由半导体激光器产生的激光的波长λ为λ/ 4的奇数倍。第一绝缘膜对GaN的附着力比第二绝缘膜对GaN的粘合强。第二绝缘膜的折射率为2〜2.3μm。第一绝缘膜为10nm以下。第一绝缘膜是具有化学计量组成的氧化膜。

7. 发明授权

US07518162B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07518162B2
公开(公告)日：2009-04-14
申请号：US11668640
申请日：2007-01-30
申请人： Kyosuke Kuramoto
发明人： Kyosuke Kuramoto
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/2009
摘要： A semiconductor light emitting device has a gallium nitride compound semiconductor, and a first cladding layer of a first conductivity type, an active layer, an electron barrier layer of a second conductivity type and made of InxAlyGa1-x-yN (0≦x≦1 and 0≦y≦1), and a second cladding layer of the second conductivity type, laminated, in order, on a substrate. The electron barrier layer has a larger band gap than each of the active layer and the second cladding layer. The thickness of the electron barrier layer is in a range from 2 nm to 7 nm.
摘要翻译：半导体发光器件具有氮化镓化合物半导体，第一导电类型的第一包层，有源层，第二导电类型的电子势垒层，由In x Al y Ga 1-x-y N（0 <= x < = 1和0 <= y <= 1）和第二导电类型的第二包覆层按顺序层叠在基板上。电子势垒层具有比有源层和第二包覆层中的每一个更大的带隙。电子势垒层的厚度在2nm〜7nm的范围内。

8. 发明申请

US20090022195A1 SEMICONDUCTOR LASER 失效
标题翻译：半导体激光器
公开(公告)号：US20090022195A1
公开(公告)日：2009-01-22
申请号：US11910930
申请日：2006-03-15
申请人： Kyosuke Kuramoto
发明人： Kyosuke Kuramoto
IPC分类号： H01S5/323
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/0206 , H01S5/02272 , H01S5/0425 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm−2 or more, a crystalline semiconductors structure located on the substrate and having an active layer, an insulating film located on the semiconductors structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120×L μm2 or less.
摘要翻译：通过减少通过穿透位错部分的电流泄漏，获得具有耐电源浪涌的高静电耐受电压并且具有改进的长期可靠性的半导体激光器。半导体激光器包括具有位错密度为1×10 5 cm -2以上的高位错区域的基板，位于基板上并具有有源层的结晶半导体结构，位于半导体结构上的绝缘膜，位于并且与用于将电流注入有源层的半导体结构电连续，并且位于衬底的后表面上的背电极。半导体激光器具有长度为L的激光谐振器，表面电极的面积为120×Lm2以下。

9. 发明申请

US20080017878A1 SEMICONDUCTOR LIGHT-EMITTING DIODE 失效
标题翻译：半导体发光二极管
公开(公告)号：US20080017878A1
公开(公告)日：2008-01-24
申请号：US11773470
申请日：2007-07-05
申请人： Kyosuke Kuramoto
发明人： Kyosuke Kuramoto
IPC分类号： H01L33/00
CPC分类号： H01L33/38
摘要： A semiconductor light-emitting diode includes an electrically conductive substrate transmissive to light-emitting wavelengths, and semiconductor layers including a light-emitting layer, on the substrate. A principal-surface electrode is located on the semiconductor layers and a rear-surface electrode having an opening is located on the rear surface of the substrate. The width of the opening is L, the distance between the rear-surface electrode and the light-emitting layer is t, L≦2 t, and the rear-surface electrode covers no more than 40% of the rear surface of the substrata.
摘要翻译：半导体发光二极管包括在发光波长上透射的导电基板和包括发光层的半导体层。主表面电极位于半导体层上，并且具有开口的后表面电极位于衬底的后表面上。开口宽度为L，背面电极与发光层之间的距离为t，L <= 2t，后表面电极覆盖不超过衬底后表面的40％。

10. 发明申请

US20100202480A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20100202480A1
公开(公告)日：2010-08-12
申请号：US12499153
申请日：2009-07-08
申请人： Kyosuke Kuramoto
发明人： Kyosuke Kuramoto
IPC分类号： H01S3/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/16 , H01S5/2009 , H01S5/22 , H01S5/2219 , H01S2301/18
摘要： A semiconductor light-emitting element s includes a semiconductor substrate; a semiconductor laminate structure having a first conductivity-type cladding layer, an active layer, a second conductivity-type cladding layer, and a second conductivity-type contact layer sequentially arranged on the semiconductor substrate; a stripe-shaped waveguide region on an upper surface of the semiconductor laminate structure; and recessed portions on the upper surface, spaced from the waveguide region; a first electrode electrically connected to the semiconductor substrate; a second electrode electrically connected to the contact layer; a pad electrode on the second electrode; and an inner recessed portion electrode in the recessed portions, on an insulating film.
摘要翻译：半导体发光元件包括半导体衬底; 半导体层叠结构，其具有依次配置在所述半导体基板上的第一导电型包覆层，有源层，第二导电型包覆层和第二导电型接触层; 半导体层叠结构的上表面上的条状波导区域; 以及与所述波导区域间隔开的所述上表面上的凹部; 电连接到所述半导体衬底的第一电极; 电连接到所述接触层的第二电极; 第二电极上的焊盘电极; 以及在凹部中的内凹部电极，在绝缘膜上。

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