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1. 发明授权

US08487351B2 Image sensor and image sensing system including the same 有权
标题翻译：图像传感器和图像传感系统包括相同的
公开(公告)号：US08487351B2
公开(公告)日：2013-07-16
申请号：US12591632
申请日：2009-11-25
申请人： Kyung Ho Lee , Dong-Yoon Jang , Jung Chak Ahn , Moo Sup Lim , Yong Jei Lee , Jong Eun Park
发明人： Kyung Ho Lee , Dong-Yoon Jang , Jung Chak Ahn , Moo Sup Lim , Yong Jei Lee , Jong Eun Park
IPC分类号： H01L27/148
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643
摘要： The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.
摘要翻译：提供了图像传感器和包括其的图像感测系统。图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。图像传感器包括至少一个阻热器或隔热罩。可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

2. 发明申请

US20100133635A1 image sensor and image sensing system including the same 有权
标题翻译：图像传感器和包括其的图像感测系统
公开(公告)号：US20100133635A1
公开(公告)日：2010-06-03
申请号：US12591632
申请日：2009-11-25
申请人： Kyung Ho Lee , Dong-Yoon Jang , Jung Chak Ahn , Moo Sup Lim , Yong Jei Lee , Jong Eun Park
发明人： Kyung Ho Lee , Dong-Yoon Jang , Jung Chak Ahn , Moo Sup Lim , Yong Jei Lee , Jong Eun Park
IPC分类号： H01L31/024 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643
摘要： The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.
摘要翻译：提供了图像传感器和包括其的图像感测系统。图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。图像传感器包括至少一个阻热器或隔热罩。可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

3. 发明申请

US20100123771A1 Pixel circuit, photoelectric converter, and image sensing system including the pixel circuit and the photoelectric converter 审中-公开
标题翻译：像素电路，光电转换器和图像感测系统，包括像素电路和光电转换器
公开(公告)号：US20100123771A1
公开(公告)日：2010-05-20
申请号：US12591197
申请日：2009-11-12
申请人： Kyoung Sik Moon , Jung Chak Ahn , Moo Sup Lim , Sung-Ho Choi , Kang-Sun Lee
发明人： Kyoung Sik Moon , Jung Chak Ahn , Moo Sup Lim , Sung-Ho Choi , Kang-Sun Lee
IPC分类号： H04N13/02 , G01C3/08
CPC分类号： H04N5/341 , G01C3/08 , G01S7/4816 , G01S17/89 , H04N5/3696 , H04N5/3745
摘要： Provided are a pixel circuit, a photoelectric converter, and an image sensing system thereof. The pixel circuit includes a photodiode and an output unit. The photodiode generates a first photo charge to detect the distance from an object and a second photo charge to detect the color of the object. The output unit generates at least one depth signal used to detect the distance based on the first photo charge generated by the photodiode, and a color signal used to detect the color of the object based on the second photo charge.
摘要翻译：提供像素电路，光电转换器及其图像感测系统。像素电路包括光电二极管和输出单元。光电二极管产生第一光电荷以检测与物体的距离和第二照相电荷以检测物体的颜色。输出单元基于由光电二极管产生的第一光电荷产生用于检测距离的至少一个深度信号，以及用于基于第二照相电荷检测对象的颜色的颜色信号。

4. 发明申请

US20130188085A1 IMAGE SENSORS HAVING REDUCED DARK CURRENT AND IMAGING DEVICES HAVING THE SAME 审中-公开
标题翻译：具有减少的暗电流和成像装置的图像传感器
公开(公告)号：US20130188085A1
公开(公告)日：2013-07-25
申请号：US13616306
申请日：2012-09-14
申请人： Eun Sub Shim , Moo Sup Lim , Seung Sik Kim , Jung Chak Ahn
发明人： Eun Sub Shim , Moo Sup Lim , Seung Sik Kim , Jung Chak Ahn
IPC分类号： H04N5/222 , H01L27/146
CPC分类号： H01L27/14603 , H01L27/14612 , H04N5/359 , H04N5/361 , H04N5/3745
摘要： An image sensor includes a photo detector for accumulating charges in response to an incident light, a floating diffusion node, a first reset unit connected between a supply voltage node and the floating diffusion node, a transmission unit for transmitting accumulated charges from the photo detector to the floating diffusion node, a source follower output unit for converting charges stored in the floating diffusion node into an output voltage, a first selection unit for outputting the output voltage selectively, and a second selection unit connected between the floating diffusion node and the source follower output unit. Dark current may be reduced or prevented from flowing from the source follower output unit into the floating diffusion node.
摘要翻译：图像传感器包括响应于入射光积累电荷的光电检测器，浮动扩散节点，连接在电源电压节点和浮动扩散节点之间的第一复位单元，用于将来自光电检测器的累积电荷传输到浮动扩散节点，用于将存储在浮动扩散节点中的电荷转换为输出电压的源极跟随器输出单元，用于选择性地输出输出电压的第一选择单元，以及连接在浮动扩散节点和源极跟随器之间的第二选择单元输出单元。可以减小或防止暗电流从源极跟随器输出单元流入浮动扩散节点。

5. 发明授权

US09324758B2 Depth pixel included in three-dimensional image sensor and three-dimensional image sensor including the same 有权
标题翻译：包括在三维图像传感器中的深度像素和包括其的三维图像传感器
公开(公告)号：US09324758B2
公开(公告)日：2016-04-26
申请号：US14077602
申请日：2013-11-12
申请人： Min-Seok Oh , Hae-Kyung Kong , Tae Chan Kim , Jung Chak Ahn , Moo Sup Lim
发明人： Min-Seok Oh , Hae-Kyung Kong , Tae Chan Kim , Jung Chak Ahn , Moo Sup Lim
IPC分类号： H01L31/062 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14641
摘要： A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.
摘要翻译：深度像素包括光检测区域，第一和第二光栅以及第一和第二浮动扩散区域。光检测区域根据由物体反射的光来收集照片费用。所收集的光电荷基于光检测区域中的内部电场在与第一方向不同的第一方向和第二方向漂移。响应于第一光控制信号激活第一光栅。如果第一光栅被激活，则第一浮动扩散区积累在第一方向漂移的第一光电荷。响应于第一光控制信号激活第二光栅。如果第二光栅被激活，则第二浮动扩散区积累在第二方向漂移的第二光电荷。

6. 发明授权

US09041916B2 Three-dimensional image sensor and mobile device including same 有权
标题翻译：三维图像传感器和包括其的移动设备
公开(公告)号：US09041916B2
公开(公告)日：2015-05-26
申请号：US13615860
申请日：2012-09-14
申请人： Min Seok Oh , Hae Kyung Kong , Tae Chan Kim , Jung Chak Ahn , Moo Sup Lim
发明人： Min Seok Oh , Hae Kyung Kong , Tae Chan Kim , Jung Chak Ahn , Moo Sup Lim
IPC分类号： H04N13/02 , H01L27/146 , H04N5/3745 , G01S7/486
CPC分类号： H04N13/271 , G01S7/4863 , H01L27/14656 , H04N5/37452
摘要： A 3D image sensor includes a depth pixel that includes; a photo detector generating photo-charge, first and second floating diffusion regions, a first transfer transistor transferring photo-charge to the first floating diffusion region during a first transfer period in response to a first transfer gate signal, a second transfer transistor transferring photo-charge to the second floating diffusion region during a second transfer period in response to a second transfer gate signal, and an overflow transistor that discharges surplus photo-charge in response to a drive gate signal. Control logic unit controlling operation of the depth pixel includes a first logic element providing the first transfer gate signal, a second logic element providing the second transfer gate signal, and another logic element providing the drive gate signal to the overflow transistor when the first transfer period overlaps, at least in part, the second transfer period.
摘要翻译： 3D图像传感器包括深度像素，其包括：产生光电荷，第一和第二浮动扩散区域的光电检测器，响应于第一传输栅极信号在第一传输周期期间将光电荷传输到第一浮动扩散区域的第一传输晶体管，响应于第二传输门信号在第二传送周期期间向第二浮动扩散区域充电;以及溢流晶体管，其响应于驱动栅极信号而放电剩余的光电荷。控制逻辑单元控制深度像素的操作包括提供第一传输门信号的第一逻辑元件，提供第二传输门信号的第二逻辑元件，以及当第一传输周期提供驱动栅信号给溢出晶体管时的另一逻辑元件至少部分地与第二转移期重叠。

7. 发明授权

US09019410B2 Image sensors comprising photodiodes and image processing devices including the same 有权
标题翻译：包括光电二极管的图像传感器和包括其的图像处理装置
公开(公告)号：US09019410B2
公开(公告)日：2015-04-28
申请号：US13617296
申请日：2012-09-14
申请人： Yong Lim , Moo Sup Lim
发明人： Yong Lim , Moo Sup Lim
IPC分类号： H04N3/14 , H04N5/335 , H01L27/146 , H04N5/355 , H04N5/3745 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H04N5/3559 , H04N5/3745 , H04N5/37452
摘要： An image sensor may include a photodiode configured to convert an optical signal into photogenerated charge, a sensing node adjacent to the photodiode and configured to sense the photogenerated charge, a read-out circuit configured to convert the photogenerated charge into an electrical signal and to output the electrical signal through an output line, and/or at least one capacitor formed between the sensing node and a conversion gain control line. The conversion gain control line corresponding to the at least one capacitor may be selectively connected to a ground line or the output line based on at least one control signal.
摘要翻译：图像传感器可以包括被配置为将光信号转换为光生电荷的光电二极管，与光电二极管相邻并被配置为感测光生电荷的感测节点，被配置为将光生电荷转换成电信号并被输出的读出电路通过输出线的电信号和/或形成在感测节点和转换增益控制线之间的至少一个电容器。对应于至少一个电容器的转换增益控制线可以基于至少一个控制信号选择性地连接到地线或输出线。

8. 发明授权

US09653503B2 Image sensor and image processing system including the same 有权
公开(公告)号：US09653503B2
公开(公告)日：2017-05-16
申请号：US14741740
申请日：2015-06-17
申请人： Ji Won Lee , Seung Sik Kim , Young Chan Kim , Tae Han Kim , Eun Sub Shim , Dong Joo Yang , Min Seok Oh , Moo Sup Lim
发明人： Ji Won Lee , Seung Sik Kim , Young Chan Kim , Tae Han Kim , Eun Sub Shim , Dong Joo Yang , Min Seok Oh , Moo Sup Lim
IPC分类号： H01L27/146 , H04N5/378 , H04N5/335 , H04N5/355 , H04N5/359 , H04N5/369
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14643 , H04N5/3592 , H04N5/3696 , H04N5/378
摘要： An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

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