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1. 发明申请

US20160172165A1 Carrier Ring Structure and Chamber Systems Including the Same 审中-公开
标题翻译：载体环结构和包括其的室系统
公开(公告)号：US20160172165A1
公开(公告)日：2016-06-16
申请号：US14568608
申请日：2014-12-12
申请人： Lam Research Corporation
发明人： Eli Jeon , Nick Ray Linebarger, JR. , Sirish Reddy , Alice Hollister , Rungthiwa Methaapanon
IPC分类号： H01J37/32
CPC分类号： H01J37/32715 , C23C16/45544 , C23C16/458 , C23C16/52 , H01J37/32733 , H01L21/0228 , H01L21/0262 , H01L21/28556 , H01L21/67 , H01L21/68735
摘要： A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step. Each of the top facing edge and the lower inner edge have a rounded non-sharp edge and a top of each of the contact support structures is configured for contact with a bottom edge surface of a wafer for lifting and lowering and moving the wafer.
摘要翻译：提供了一种在实施用于沉积使用该载体环的薄膜和室的腔室中的载体环。载体环具有外边缘侧和晶片边缘侧的环形盘形状。载体环具有在外边缘侧到晶片边缘侧之间延伸的顶部载体环表面。晶片边缘侧包括比顶部载体环表面低的下载体环表面。晶片边缘侧还包括多个接触支撑结构。每个接触支撑结构位于下载体环表面的边缘处，并且具有在下载体环表面和顶部载体环表面之间的高度，并且接触支撑结构具有渐缩的边缘和拐角。在顶部载体环表面和下部载体环表面之间限定了台阶，使得顶部面向边缘设置在台阶的顶部，下部内边缘设置在台阶的底部。每个顶面对边缘和下内边缘都具有圆形的非锋利边缘，并且每个接触支撑结构的顶部被配置为与用于提升和降低和移动晶片的晶片的底部边缘表面接触。

2. 发明申请

US20170321324A1 SUBSTRATE PEDESTAL MODULE INCLUDING BACKSIDE GAS DELIVERY TUBE AND METHOD OF MAKING 审中-公开
公开(公告)号：US20170321324A1
公开(公告)日：2017-11-09
申请号：US15662553
申请日：2017-07-28
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, JR.
IPC分类号： C23C16/458 , H01L21/687 , H01L21/67 , B32B37/10 , C23C16/52 , C23C16/505 , H01L21/683
CPC分类号： C23C16/4586 , B32B37/1018 , B32B2457/00 , C23C16/4581 , C23C16/505 , C23C16/52 , H01L21/67103 , H01L21/6831 , H01L21/68757 , H01L21/68785 , H01L21/68792
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.

3. 发明公开

US20240167161A1 SPATIALLY TUNABLE DEPOSITION TO COMPENSATE WITHIN WAFER DIFFERENTIAL BOW 审中-公开
公开(公告)号：US20240167161A1
公开(公告)日：2024-05-23
申请号：US18427348
申请日：2024-01-30
申请人： Lam Research Corporation
发明人： Fayaz A. Shaikh , Adriana Vintila , Matthew Mudrow , Nick Ray Linebarger, JR. , Xin Yin , James F. Lee , Brian Joseph Williams
IPC分类号： C23C16/458 , C23C16/04 , C23C16/44 , C23C16/455 , C23C16/509
CPC分类号： C23C16/4585 , C23C16/042 , C23C16/4409 , C23C16/45521 , C23C16/45565 , C23C16/45574 , C23C16/45597 , C23C16/509
摘要： A plasma processing chamber for depositing a film on an underside surface of a wafer, includes a showerhead pedestal. The showerhead pedestal includes a first zone and a second zone. The first zone is configured for depositing a first film to the underside surface of the wafer and the second zone is configured for depositing a second film to the underside surface of the wafer.

4. 发明申请

US20160333475A1 SUBSTRATE PEDESTAL MODULE INCLUDING BACKSIDE GAS DELIVERY TUBE AND METHOD OF MAKING 有权
标题翻译：底板包括背气管输送管和其制造方法
公开(公告)号：US20160333475A1
公开(公告)日：2016-11-17
申请号：US14710132
申请日：2015-05-12
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, JR.
IPC分类号： C23C16/458 , C23C16/455 , B32B37/10 , H01L21/687 , B32B37/16 , C23C16/505 , C23C16/52
CPC分类号： C23C16/4586 , B32B37/1018 , B32B2457/00 , C23C16/4581 , C23C16/505 , C23C16/52 , H01L21/67103 , H01L21/6831 , H01L21/68757 , H01L21/68785 , H01L21/68792
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.
摘要翻译：一种半导体衬底处理装置，包括具有可处理半导体衬底的处理区域的真空室，与真空室流体连通以将处理气体供应到真空室中的处理气体源，喷头模块，其中处理气体从处理气体源被供给到真空室的处理区域，以及基板基座模块。衬底基座模块包括由陶瓷材料制成的压板，其具有在加工期间被配置为在其上支撑半导体衬底的上表面，由陶瓷材料制成的杆，其具有支撑压板的上杆法兰和由陶瓷材料制成的背侧气体管位于茎的内部。背侧气体管包括位于压板的下表面和上杆凸缘的上表面之间的上气体管凸缘，其中后侧气体管与压板的至少一个后侧气体通道流体连通，后侧气体管构造成在加工过程中将背面气体供给到待支撑在压板上表面上的半导体基板的下表面下方的区域。

5. 发明公开

US20230352279A1 MULTI-STATION PROCESSING TOOLS WITH STATION-VARYING SUPPORT FEATURES FOR BACKSIDE PROCESSING 审中-公开
公开(公告)号：US20230352279A1
公开(公告)日：2023-11-02
申请号：US18002289
申请日：2021-06-21
申请人： Lam Research Corporation
发明人： Nick Ray Linebarger, JR. , Fayaz A. Shaikh , Arul N. Dhas
IPC分类号： H01L21/02 , C23C16/458 , C23C16/455 , H01J37/32 , C23C16/509
CPC分类号： H01J37/32715 , C23C16/45565 , C23C16/45597 , C23C16/4585 , C23C16/5096 , H01J37/32403 , H01J37/32743 , H01J37/32788 , H01J37/32899 , H01L21/02274 , H01J2237/332
摘要： Multi-station processing tools with station-varying support features for backside processing are provided. The support features in a first station may hold a wafer at a first set of points during backside deposition, blocking backside deposition, etching, or other processing at those points. The support features in a second station may hold a wafer at a second set of points that don’t overlap with the first set of points.

6. 发明公开

US20230250524A1 FRICTION STIR PROCESSING FOR CORROSION RESISTANCE 审中-公开
公开(公告)号：US20230250524A1
公开(公告)日：2023-08-10
申请号：US18013742
申请日：2021-06-30
申请人： Lam Research Corporation
发明人： Keith Joseph Martin , Nick Ray Linebarger, JR.
IPC分类号： C22F3/00 , C22F1/04
CPC分类号： C22F3/00 , C22F1/04
摘要： In some examples, techniques for enhancing a corrosion resistance of a component are provided. In some examples, the component includes a granular metallic material. A friction stir processing operation is performed on the material. The friction stir processing operation comprises passing a rotating head of a friction stir welding tool through a surface thickness of the granular metallic material in a treatment path.

7. 发明公开

US20230238223A1 CARRIER RINGS WITH RADIALLY-VARIED PLASMA IMPEDANCE 审中-公开
公开(公告)号：US20230238223A1
公开(公告)日：2023-07-27
申请号：US18002614
申请日：2021-06-21
申请人： Lam Research Corporation
发明人： Nick Ray Linebarger, JR. , Fayaz A. Shaikh , Kang Il Lee
IPC分类号： H01J37/32 , H01L21/687 , C23C16/458 , C23C16/505
CPC分类号： H01J37/32715 , H01L21/68721 , C23C16/4585 , C23C16/505 , H01J2237/2007 , H01J37/32733 , H01J37/32899 , H01J37/32082 , H01J2237/332
摘要： Carrier rings with radially-varied plasma impedance are provided herein. In some embodiments, a carrier ring may include an outer ring that holds a removable inner ring. The outer ring may be formed of a dielectric material such as ceramic. The inner ring may be formed of a metal such as aluminum to provide a desired impedance. In some other embodiments, a carrier ring is formed from a single piece with radially-varying impedances.

8. 发明公开

US20230220549A1 SUBSTRATE PEDESTAL INCLUDING BACKSIDE GAS-DELIVERY TUBE 审中-公开
公开(公告)号：US20230220549A1
公开(公告)日：2023-07-13
申请号：US18123153
申请日：2023-03-17
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, JR.
IPC分类号： C23C16/458 , C23C16/505 , B32B37/10 , H01L21/67 , H01L21/687 , H01L21/683 , C23C16/52 , H01J37/32
CPC分类号： C23C16/4586 , C23C16/505 , B32B37/1018 , C23C16/4581 , H01L21/67103 , H01L21/68785 , H01L21/68792 , H01L21/6831 , H01L21/68757 , C23C16/52 , H01J37/32577 , B32B2457/00
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.

9. 发明申请

US20230052089A1 IN SITU SURFACE COATING OF PROCESS CHAMBER 有权
公开(公告)号：US20230052089A1
公开(公告)日：2023-02-16
申请号：US17796406
申请日：2021-02-04
申请人： Lam Research Corporation
发明人： Jeffrey Womack , Karl Frederick Leeser , Curtis W. Bailey , Keith Joseph Martin , Rigel Martin Bruening , Nick Ray Linebarger, JR.
IPC分类号： H01J37/32 , C23C16/44 , C23C16/52 , C23C16/505
摘要： A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.

10. 发明申请

US20200325578A1 SUBSTRATE PEDESTAL INCLUDING BACKSIDE GAS-DELIVERY TUBE 审中-公开
公开(公告)号：US20200325578A1
公开(公告)日：2020-10-15
申请号：US16863835
申请日：2020-04-30
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, JR.
IPC分类号： C23C16/458 , C23C16/505 , C23C16/52 , H01L21/687 , H01L21/67 , H01L21/683 , B32B37/10
摘要： In various examples, the disclosed subject matter includes a substrate pedestal that includes a platen formed from a ceramic material and having an upper surface to support a substrate during processing. A stem, formed from a ceramic material, has an upper-stem flange upon which the platen is mechanically coupled. The stem has an interior portion. A backside gas-delivery tube, formed from a ceramic material, is located in the interior portion of the stem. The backside gas-delivery tube includes an upper gas-tube flange that is located between a lower surface of the platen and an upper surface of the upper-stem flange. The backside gas-delivery tube is in fluid communication with at least one backside-gas passage of the platen and is arranged to supply a backside gas to a region below a lower surface of the substrate during processing. Other examples of apparatuses and methods of making and using the apparatuses are included.

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