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1. 发明申请

US20180261463A1 TECHNIQUES FOR MANIPULATING PATTERNED FEATURES USING IONS 审中-公开
公开(公告)号：US20180261463A1
公开(公告)日：2018-09-13
申请号：US15977255
申请日：2018-05-11
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , Huixiong Dai , Jun Lang , John Hautala
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/768
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32366 , H01J37/32403 , H01J37/32422 , H01L21/0337 , H01L21/3085 , H01L21/31144 , H01L21/76816 , H01L21/76831 , H01L21/76865 , H01L21/76879 , H01L21/76883
摘要： A method may include providing a surface feature on a substrate, the surface feature comprising a feature shape a feature location, and a dimension along a first direction within a substrate plane; depositing a layer comprising a layer material on the surface feature; and directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane, wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact a first portion of the surface feature and do not impact a second portion of the surface feature, and wherein an altered surface feature is generated, the altered surface feature differing from the surface feature in at least one of: the dimension along the first direction, the feature shape, or the feature location.

2. 发明申请

US20180158651A1 Device for Treating an Object with Plasma 审中-公开
公开(公告)号：US20180158651A1
公开(公告)日：2018-06-07
申请号：US15870890
申请日：2018-01-13
申请人： Plasma-Therm, LLC
发明人： Gilles Baujon , Emmanuel Guidotti , Yannick Pilloux , Patrick Rabinzohn , Julien Richard , Marc Segers , Vincent Girault
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/32357 , H01J37/32366 , H01J37/32403 , H01J37/32449 , H01J2237/334 , Y10T428/24802
摘要： A system for treating an object with plasma includes a vacuum processing chamber having a holder on which the object to be treated is placed, at least two subassemblies each including at least one plasma source able to generate a plasma and being supplied with radio-frequency power Pi and with a gas i of independent flow rate ni. The plasma generated by one of the subassemblies is a partially ionized gas or gas mixture of different chemical nature from the plasma generated by the other subassembly or subassemblies. A process for selectively treating a composite object employing such a device is described.

3. 发明申请

US20180135165A1 A METHOD AND A DEVICE FOR COATING AN ENDOPROSTHESIS HAVING A BASE BODY 审中-公开
公开(公告)号：US20180135165A1
公开(公告)日：2018-05-17
申请号：US15315683
申请日：2015-06-24
申请人： BIOTRONIK AG
发明人： Christian Schwarz , Enrico Buchholz , Carsten Momma
IPC分类号： C23C16/02 , C23C16/32 , C23C16/458 , C23C16/517 , H01J37/32
CPC分类号： C23C16/0245 , C23C16/0272 , C23C16/325 , C23C16/458 , C23C16/50 , C23C16/517 , H01J37/32366 , H01J37/32403 , H01J37/32412 , H01J37/32422 , H01J37/32706 , H01J37/32715
摘要： The invention relates to a method for the plasma treatment of an endoprosthesis having base body. The method includes inserting the base body into a vacuum chamber; executing a cleaning step with a plasma treatment of a surface of the base body that is to be coated; executing a treatment step in a plasma of the surface of the base body that is to be coated, wherein ions out of the plasma are implanted into an area of the base body that is close to the surface.

4. 发明申请

US20180012763A1 DOPING METHOD, DOPING APPARATUS, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD 审中-公开
公开(公告)号：US20180012763A1
公开(公告)日：2018-01-11
申请号：US15539224
申请日：2015-12-14
申请人： TOKYO ELECTRON LIMITED
发明人： Hirokazu UEDA , Masahiro OKA , Yuuki KOBAYASHI , Yasuhiro SUGIMOTO
IPC分类号： H01L21/223 , H01J37/32 , H01L29/66 , H01L21/02
CPC分类号： H01L21/2236 , H01J37/32192 , H01J37/32266 , H01J37/32403 , H01J37/3244 , H01J37/32715 , H01J2237/335 , H01J2237/3365 , H01L21/02057 , H01L29/66803
摘要： Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a plasma doping, and plasma is generated within a processing vessel using microwaves so as to perform the plasma doping processing on the processing target substrate hold on a holding pedestal in the processing vessel.

5. 发明申请

US20170271130A1 DURABLE 3D GEOMETRY CONFORMAL ANTI-REFLECTION COATING 审中-公开
公开(公告)号：US20170271130A1
公开(公告)日：2017-09-21
申请号：US15616839
申请日：2017-06-07
申请人： Apple Inc.
发明人： Matthew S. Rogers
IPC分类号： H01J37/32 , G02B1/113 , H01J37/34 , C23C16/50 , C23C28/04 , C23C16/455 , C23C14/34 , C23C14/54 , C23C16/52 , C23C14/00 , C23C16/458
CPC分类号： H01J37/32596 , C23C14/0021 , C23C14/0036 , C23C14/3407 , C23C14/3464 , C23C14/542 , C23C16/455 , C23C16/458 , C23C16/50 , C23C16/52 , C23C28/04 , G02B1/113 , H01J37/32403 , H01J37/32541 , H01J37/32614 , H01J37/3417 , H01J37/342 , H01J37/3423 , H01J37/3435 , H01J2237/006 , H01J2237/081 , H01J2237/327 , H01J2237/3321
摘要： Methods and systems for depositing a thin film are disclosed. The methods and systems can be used to deposit a film having a uniform thickness on a substrate surface that has a non-planar three-dimensional geometry, such as a curved surface. The methods involve the use of a deposition source that has a shape in accordance with the non-planar three-dimensional geometry of the substrate surface. In some embodiments, multiple layers of films are deposited onto each other forming multi-layered coatings. In some embodiments, the multi-layered coatings are antireflective (AR) coatings for windows or lenses.

6. 发明申请

US20170263460A1 TECHNIQUES FOR MANIPULATING PATTERNED FEATURES USING IONS 有权
公开(公告)号：US20170263460A1
公开(公告)日：2017-09-14
申请号：US15142526
申请日：2016-04-29
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Simon Ruffell , Huixiong Dai , Jun Lang , John Hautala
IPC分类号： H01L21/3065 , H01L21/768 , H01L21/308
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32366 , H01J37/32403 , H01J37/32422 , H01L21/0337 , H01L21/3085 , H01L21/31144 , H01L21/76879 , H01L21/76883
摘要： A method may include providing a surface feature on a substrate, the surface feature comprising a feature shape a feature location, and a dimension along a first direction within a substrate plane; depositing a layer comprising a layer material on the surface feature; and directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane, wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact a first portion of the surface feature and do not impact a second portion of the surface feature, and wherein an altered surface feature is generated, the altered surface feature differing from the surface feature in at least one of: the dimension along the first direction, the feature shape, or the feature location.

7. 发明申请

US20160163517A1 FILAMENT HOLDER FOR HOT CATHODE PECVD SOURCE 有权
标题翻译：用于热阴极PECVD源的FILAMENT HOLDER
公开(公告)号：US20160163517A1
公开(公告)日：2016-06-09
申请号：US14939659
申请日：2015-11-12
申请人： Seagate Technology LLC
发明人： Samuel Lewis Tanaka , Christopher L. Platt , Thomas Larson Greenberg
IPC分类号： H01J37/32 , H01K1/18
CPC分类号： H01J37/32568 , C23C16/26 , C23C16/50 , H01J37/3233 , H01J37/32403 , H01J37/3244 , H01J37/32449 , H01J37/32541 , H01J2237/032 , H01J2237/3321 , H01K1/18
摘要： A chemical vapor deposition source that includes at least one plate to which first and second electrical connection posts are coupled. The chemical vapor deposition source also includes a filament having a first end and a second end. The first end of the filament is electrically connected to the first electrical connection post and the second end of the filament is electrically connected to the second electrical connection post. The chemical vapor deposition source further includes at least one filament holder electrically insulated from the at least one plate. The at least one filament holder holds a portion of the filament between the first end and the second end.
摘要翻译：化学气相沉积源，其包括至少一个板，第一和第二电连接柱与所述至少一个板连接。化学气相沉积源还包括具有第一端和第二端的细丝。灯丝的第一端电连接到第一电连接柱，灯丝的第二端电连接到第二电连接柱。化学气相沉积源还包括与至少一个板电绝缘的至少一个灯丝架。所述至少一个灯丝保持器将所述灯丝的一部分保持在所述第一端和所述第二端之间。

8. 发明申请

US20160093477A1 DURABLE 3D GEOMETRY CONFORMAL ANTI-REFLECTION COATING 审中-公开
标题翻译：耐久的3D几何一致的抗反射涂层
公开(公告)号：US20160093477A1
公开(公告)日：2016-03-31
申请号：US14497077
申请日：2014-09-25
申请人： Apple Inc.
发明人： Matthew S. Rogers
IPC分类号： H01J37/32 , C23C14/00 , C23C16/455 , C23C16/50 , C23C16/458 , C23C14/34 , H01J37/34
CPC分类号： H01J37/32596 , C23C14/0021 , C23C14/0036 , C23C14/3407 , C23C14/3464 , C23C14/542 , C23C16/455 , C23C16/458 , C23C16/50 , C23C16/52 , C23C28/04 , G02B1/113 , H01J37/32403 , H01J37/32541 , H01J37/32614 , H01J37/3417 , H01J37/342 , H01J37/3423 , H01J37/3435 , H01J2237/006 , H01J2237/081 , H01J2237/327 , H01J2237/3321
摘要： Methods and systems for depositing a thin film are disclosed. The methods and systems can be used to deposit a film having a uniform thickness on a substrate surface that has a non-planar three-dimensional geometry, such as a curved surface. The methods involve the use of a deposition source that has a shape in accordance with the non-planar three-dimensional geometry of the substrate surface. In some embodiments, multiple layers of films are deposited onto each other forming multi-layered coatings. In some embodiments, the multi-layered coatings are antireflective (AR) coatings for windows or lenses.
摘要翻译：公开了用于沉积薄膜的方法和系统。方法和系统可以用于在具有非平面三维几何形状（例如弯曲表面）的衬底表面上沉积具有均匀厚度的膜。这些方法涉及使用具有根据衬底表面的非平面三维几何形状的形状的沉积源。在一些实施例中，将多层膜沉积到彼此上形成多层涂层。在一些实施例中，多层涂层是用于窗户或透镜的抗反射（AR）涂层。

9. 发明申请

US20160032450A1 METHOD FOR A DIAMOND VAPOR DEPOSITION 审中-公开
标题翻译：金刚石蒸气沉积方法
公开(公告)号：US20160032450A1
公开(公告)日：2016-02-04
申请号：US14779488
申请日：2014-02-25
申请人： NEOCOAT SA
发明人： David Rats , Christophe Provent
IPC分类号： C23C16/27 , B81C1/00 , H01L21/02 , H01J37/32 , C01B31/06
CPC分类号： C23C16/274 , B81C1/00373 , C01B32/25 , C23C16/045 , C23C16/511 , H01J37/32192 , H01J37/32201 , H01J37/32293 , H01J37/32403 , H01J37/32678 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01L21/02115 , H01L21/02274
摘要： The present invention relates to a method for depositing nanocrystalline diamond using a diamond vapor deposition facility which includes: a vacuum reactor including a reaction chamber connected to a vacuum source; a plurality of plasma sources arranged along a matrix that is at least two-dimensional in the reaction chamber; and a substrate holder arranged in the reactor, said method being characterized in that the deposition is carried out at a temperature of 100 to 500° C.
摘要翻译：本发明涉及使用金刚石气相沉积设备沉积纳米晶金刚石的方法，该方法包括：真空反应器，包括连接到真空源的反应室; 沿反应室中至少二维的矩阵排列的多个等离子体源; 以及布置在反应器中的衬底保持器，所述方法的特征在于沉积在100-500℃的温度下进行。

10. 发明申请

US20140326182A1 Continuous Substrate Processing Apparatus 审中-公开
标题翻译：连续基板加工装置
公开(公告)号：US20140326182A1
公开(公告)日：2014-11-06
申请号：US14250575
申请日：2014-04-11
申请人： Areesys Corporation
发明人： Kai-An Wang , Michael Z. Wong
IPC分类号： B05C9/06
CPC分类号： B05C9/06 , B05C3/125 , C23C14/562 , C23C16/545 , H01J37/32403 , H01J37/3277 , H01J37/32807 , H01J37/32899 , H01J37/34
摘要： A processing system includes a first processing module that includes a first chamber; and a first processing source that can deposit a first material on a web substrate. An isolation module includes an isolation chamber, and one or more segregation walls that define a sequence of compartments in the isolation chamber. The first chamber is connected to a first compartment in the sequence of compartments. Each of the segregation walls includes an opening to allow the web substrate to pass through. A second processing module includes a second chamber in connection with a last compartment in the sequence of compartments in the isolation module, and a second processing source configured to deposit a second material on the web substrate. A transport mechanism moves the web substrate continuously through the first processing module, the isolation module, and the second processing module.
摘要翻译：一种处理系统，包括：第一处理模块，包括第一室; 以及可以将第一材料沉积在网状基材上的第一处理源。隔离模块包括隔离室和限定隔离室中的隔间序列的一个或多个隔离壁。第一室连接到隔间序列中的第一隔室。每个分隔壁包括允许网状基材通过的开口。第二处理模块包括与隔离模块中的隔间序列中的最后隔室相连的第二室和被配置成将第二材料沉积在幅材衬底上的第二处理源。传送机构通过第一处理模块，隔离模块和第二处理模块连续移动网板。

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