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1. 发明申请

US20230037585A1 Managing Page Buffer Circuits in Memory Devices 有权
公开(公告)号：US20230037585A1
公开(公告)日：2023-02-09
申请号：US17674132
申请日：2022-02-17
申请人： Macronix International Co., Ltd.
发明人： Shang-Chi Yang , Hui-Yao Kao
IPC分类号： G11C7/10 , G11C7/18
摘要： Systems, methods, circuits, and apparatus including computer-readable mediums for managing page buffer circuits in memory devices are provided. In one aspect, a memory device includes a memory cell array, memory cell lines connecting respective lines of memory cells, and a page buffer circuit including page buffers coupled to the memory cell lines. Each page buffer includes a sensing latch circuit and a storage latch circuit. The sensing latch circuit includes a sensing transistor coupled to a sensing node and at least one sensing latch unit having a first node coupled to the sensing node and a second node coupled to a first terminal of the sensing transistor. The storage latch circuit includes at least one storage latch unit having third and fourth nodes coupled to the sensing node and a gate terminal of the sensing transistor. A second terminal of the sensing transistor is coupled to a ground.

2. 发明授权

US10860043B2 Fast transient response voltage regulator with pre-boosting 有权
公开(公告)号：US10860043B2
公开(公告)日：2020-12-08
申请号：US15658286
申请日：2017-07-24
申请人： MACRONIX INTERNATIONAL CO., LTD.
发明人： Chun-Hsiung Hung , Shang-Chi Yang
IPC分类号： G05F1/46 , G05F1/565
摘要： A circuit and a method for supplying a regulated voltage to a target circuit characterized by fast changes in current loading are described. A voltage regulator supplies the regulated voltage to an output node. The voltage regulator has a transistor having a gate, a first terminal connected to a power supply terminal, and a second terminal connected to the output node of the voltage regulator. A voltage transition generator is capacitively coupled to the gate of the transistor to increase or decrease its driving power upon occurrence of an event in the target circuit indicating a change in current loading. The change in current loading can have an expected magnitude, and the voltage transition can have a magnitude that is a function of an expected magnitude of the increase or decrease in current loading.

3. 发明授权

US09419596B2 Sense amplifier with improved margin 有权
标题翻译：感应放大器具有提高的余量
公开(公告)号：US09419596B2
公开(公告)日：2016-08-16
申请号：US14479104
申请日：2014-09-05
申请人： Macronix International Co., Ltd.
发明人： Shang-Chi Yang , Su-Chueh Lo
IPC分类号： G05F1/10 , H03K5/02 , H01L27/06 , H01L21/8234
CPC分类号： H03K5/023 , G11C7/062 , G11C7/12 , G11C2207/002 , H01L21/8234 , H01L27/0617
摘要： One aspect of the technology is an integrated circuit, comprising a bias circuit and a sense amplifier. The bias circuit has a diode-connected transistor and a first bias voltage. The first bias voltage is represented by a first term inversely dependent on a first mobility of charge carriers of the diode-connected transistor and inversely dependent on a first gate-to-channel dielectric capacitance of the diode-connected transistor. The sense amplifier is coupled to another transistor that has a gate coupled to the first bias voltage of the bias circuit.
摘要翻译：该技术的一个方面是集成电路，包括偏置电路和读出放大器。偏置电路具有二极管连接的晶体管和第一偏置电压。第一偏置电压由与二极管连接的晶体管的电荷载流子的第一迁移率成反比的第一项表示，并且取决于二极管连接晶体管的第一栅极 - 沟道介电电容。读出放大器耦合到具有与偏置电路的第一偏置电压耦合的栅极的另一个晶体管。

4. 发明授权

US09395729B1 Circuit driving method and device 有权
标题翻译：电路驱动方法及装置
公开(公告)号：US09395729B1
公开(公告)日：2016-07-19
申请号：US14722192
申请日：2015-05-27
申请人： Macronix International Co., Ltd.
发明人： Shang-Chi Yang , Yi-Huang Liu
IPC分类号： G11C7/04 , G05F1/46 , G05F1/56 , G11C5/14
CPC分类号： G05F1/463 , G05F1/56 , G11C5/147 , G11C7/04
摘要： A low dropout regulator includes a pre-regulation circuit, a sustaining circuit coupled to the pre-regulation circuit, and a pass element coupled to the sustaining circuit. The pre-regulation circuit is configured to generate a bias voltage. The sustaining circuit is configured to receive the bias voltage and an enable signal, and generate a control signal. The sustaining circuit is turned on or off by the enable signal. The pass element is configured to receive the control signal. When the enable signal turns on the sustaining circuit, the sustaining circuit generates the control signal according to the bias voltage so that a voltage value of the control signal is higher than a voltage threshold of the pass element. When the enable signal turns off the sustaining circuit, the sustaining circuit maintains the voltage value of the control signal above the voltage threshold of the pass element.
摘要翻译：低压降稳压器包括预调节电路，耦合到预调节电路的维持电路和耦合到维持电路的通过元件。预调节电路被配置为产生偏置电压。维持电路被配置为接收偏置电压和使能信号，并产生控制信号。维持电路由使能信号导通或关断。传递元件被配置为接收控制信号。当使能信号接通维持电路时，维持电路根据偏置电压产生控制信号，使得控制信号的电压值高于通过元件的电压阈值。当使能信号关断维持电路时，维持电路将控制信号的电压值保持在通过元件的电压阈值之上。

5. 发明授权

US11605406B2 Memory and sense amplifying device thereof 有权
公开(公告)号：US11605406B2
公开(公告)日：2023-03-14
申请号：US17390707
申请日：2021-07-30
申请人： MACRONIX International Co., Ltd.
发明人： Yen-Ning Chiang , Shang-Chi Yang
IPC分类号： G11C7/02 , G11C7/06 , G11C7/12
摘要： A sense amplifying device includes a bit line bias voltage adjuster and a sense amplifying circuit. The bit line bias voltage adjuster receives a power voltage to be an operation voltage. The bit line bias voltage adjuster includes a first amplifier, a first transistor and a first current source. The first amplifier, based on the power voltage, generates an adjusted reference bit line voltage according to a reference bit line voltage and a feedback voltage. The first transistor receives the adjusted reference bit line voltage and generates the feedback voltage, wherein the first transistor is a native transistor. The sense amplifying circuit receives the power voltage to be the operation voltage, and generates a sensing result according to the adjusted reference bit line voltage.

6. 发明授权

US11502679B2 Robust power-on-reset circuit with body effect technique 有权
公开(公告)号：US11502679B2
公开(公告)日：2022-11-15
申请号：US17214483
申请日：2021-03-26
申请人： MACRONIX INTERNATIONAL CO., LTD.
发明人： Shang-Chi Yang , Jhen-Sheng Chih , Jian-Syu Lin
IPC分类号： H03K17/00 , H03K17/22 , H03K17/30 , H03K17/16
摘要： An integrated circuit with a power-on-reset circuit includes an inverter circuit connected between the first and second supply node, a cascode-connected series of transistors MCn, for n going from 1 to N, connected between the first supply node and the input node of the inverter, and a resistive element connected between the input node of the inverter and the second supply node. The transistors in the cascode-connected series of transistors MCn pull up the input node voltage above a trip point voltage when the voltage between the input node and the first supply node is more than a threshold of the cascode-connected series. A circuit connected between the first and second supply nodes is responsive to a POR pulse output by the inverter.

7. 发明授权

US11239832B1 Low-skew complementary signal generator 有权
公开(公告)号：US11239832B1
公开(公告)日：2022-02-01
申请号：US17223372
申请日：2021-04-06
申请人： MACRONIX INTERNATIONAL CO., LTD.
发明人： Shang-Chi Yang , Jhen-Sheng Chih
IPC分类号： H03K5/125 , H03K17/687 , H03K19/20
摘要： A circuit to generate complementary signals comprises a first string of inverters with two inverters in series to produce a true signal in response to an input signal, and a second string of inverters with three inverters in series to produce a complement signal in response to the input signal. A compensation capacitance circuit is connected to a node in the first string of inverters. The compensation capacitance circuit can add capacitance to the node to increase a resistance-capacitance RC delay at the node in a manner which emulates the delay across PVT conditions an inverter in the second string of inverters.

8. 发明申请

US20210098037A1 MANAGING BIT LINE VOLTAGE GENERATING CIRCUITS IN MEMORY DEVICES 有权
公开(公告)号：US20210098037A1
公开(公告)日：2021-04-01
申请号：US16842225
申请日：2020-04-07
申请人： Macronix International Co., Ltd.
发明人： Szu-yu Ko , Shang-Chi Yang
IPC分类号： G11C7/12 , G05F3/24 , H03F3/45 , G11C7/06
摘要： Systems, methods, circuits, and apparatus including computer-readable mediums for managing bit line voltage generating circuits in memory devices are provided. An example bit line voltage generating circuit is configured to provide a stable clamping voltage to at least one bit line connecting memory cells in the memory device. The bit line voltage generating circuit includes an operational amplifier configured to receive a reference voltage, a feedback voltage, and a compensation current and output an output voltage, and an output transistor configured to provide a terminal voltage as the feedback voltage and the output voltage as a target voltage that is associated with the clamping voltage. The operational amplifier is configured to be unbalanced such that the terminal voltage is smaller than the reference voltage, and the compensation current is configured to compensate the operational amplifier such that the clamping voltage is substantially constant and independent from PVT (Process-Voltage-Temperature) effect.

9. 发明授权

US10475510B2 Leakage compensation read method for memory device 有权
公开(公告)号：US10475510B2
公开(公告)日：2019-11-12
申请号：US15850280
申请日：2017-12-21
申请人： MACRONIX INTERNATIONAL CO., LTD.
发明人： Shang-Chi Yang , Chun-Yu Liao , Ken-Hui Chen
IPC分类号： G11C13/00 , G11C11/16 , G11C27/02
摘要： A memory device including an array of memory cells including bit lines, and biasing circuitry cells. A sense amplifier has a data line input connected to a data line, and a reference input. The controllable reference current source can be connected to the reference input of the sense amplifier. Control circuits on the device are configured to cause execution of a read operation, where the read operation includes a first phase in which the array is biased to induce leakage current on the selected bit line, and a second phase in which the array is biased to read a selected memory cell on the selected bit line. A circuit on the device is configured to sample the leakage current in the first phase, and to control the controllable reference current source during the second phase, as a function of the sampled leakage current.

10. 发明申请

US20140210522A1 DRIVE CIRCUITRY COMPENSATED FOR MANUFACTURING AND ENVIRONMENTAL VARIATION 有权
标题翻译：驱动电路用于制造和环境变化
公开(公告)号：US20140210522A1
公开(公告)日：2014-07-31
申请号：US13913139
申请日：2013-06-07
申请人： Macronix International Co., Ltd.
发明人： Shang-Chi Yang , Ken-Hui Chen , Su-Chueh Lo , Kuen-Long Chang , Chun-Hsiung Hung
IPC分类号： H03K17/14
CPC分类号： H03K17/145
摘要： Current drivers and biasing circuitry at least partly compensate for manufacturing variations and environmental variations such as supply voltage, temperature, and fabrication process.
摘要翻译：电流驱动器和偏置电路至少部分地补偿制造变化和环境变化，例如电源电压，温度和制造过程。

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