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1. 发明授权

US08742666B2 Radio frequency (RF) power filters and plasma processing systems including RF power filters 有权
标题翻译：射频（RF）电源滤波器和等离子体处理系统，包括射频功率滤波器
公开(公告)号：US08742666B2
公开(公告)日：2014-06-03
申请号：US12960706
申请日：2010-12-06
申请人： Maolin Long , Ralph Lu , Fred Egley , Thomas Anderson , Seyed Jafar Jafarian-Tehrani , Michael Giarratano
发明人： Maolin Long , Ralph Lu , Fred Egley , Thomas Anderson , Seyed Jafar Jafarian-Tehrani , Michael Giarratano
IPC分类号： H05H1/46 , H03H1/00 , H03H7/01
CPC分类号： H05H1/46 , H01J37/32174 , H03H1/0007 , H03H7/01 , H03H7/38
摘要： A filter for filtering radio frequency (RF) power transmitted from an electrostatic chuck (ESC) in a plasma processing system. The plasma processing system may include a heating element disposed at the ESC. The plasma processing system may further include a power supply. The filter may include a core member and a cable wound around and wound along the core member to form a set of inductors. The cable may include a plurality of wires, including a first wire and a second wire, a portion of the first wire and a portion of the second wire being twisted together, a first end of the first wire and a first end of the second wire being connected to the heating element, each of a second end of the first wire and a second end of the second wire being connected to a capacitor and being connected to the power supply.
摘要翻译：一种用于过滤在等离子体处理系统中从静电卡盘（ESC）传送的射频（RF）功率的滤波器。等离子体处理系统可以包括设置在ESC处的加热元件。等离子体处理系统还可以包括电源。过滤器可以包括芯部件和缠绕在芯部件上并缠绕的电缆，以形成一组电感器。电缆可以包括多根线，包括第一线和第二线，第一线的一部分和第二线的一部分被扭绞在一起，第一线的第一端和第二线的第一端连接到加热元件，第一线的第二端和第二线的第二端中的每一个连接到电容器并连接到电源。

2. 发明授权

US09305750B2 Adjusting current ratios in inductively coupled plasma processing systems 有权
标题翻译：在电感耦合等离子体处理系统中调整电流比
公开(公告)号：US09305750B2
公开(公告)日：2016-04-05
申请号：US12728112
申请日：2010-03-19
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani
IPC分类号： C23C16/00 , H01L21/306 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3211 , H01J37/32137 , H01J37/32183 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统可以包括用于传导第一电流以维持等离子体的至少第一部分的第一线圈。等离子体处理系统还可以包括用于传导第二电流以维持等离子体的至少第二部分的第二线圈。等离子体处理系统还可以包括用于为第一电流和第二电流供电的电源。等离子体处理系统还可以包括并联电路，用于调节第一电流的电流强度和第二电流的电流强度之一。并联电路可以电耦合在电源和第一线圈和第二线圈中的至少一个之间。并联电路可以包括彼此并联电连接的电感器和可变电容器。

3. 发明申请

US20120032756A1 RADIO FREQUENCY (RF) POWER FILTERS AND PLASMA PROCESSING SYSTEMS INCLUDING RF POWER FILTERS 有权
标题翻译：无线电频率（RF）功率滤波器和等离子体处理系统，包括射频功率滤波器
公开(公告)号：US20120032756A1
公开(公告)日：2012-02-09
申请号：US12960706
申请日：2010-12-06
申请人： Maolin LONG , Ralph Lu , Fred Egley , Thomas Anderson , Seyed Jafar Jafarian-Tehrani , Michael Giarratano
发明人： Maolin LONG , Ralph Lu , Fred Egley , Thomas Anderson , Seyed Jafar Jafarian-Tehrani , Michael Giarratano
IPC分类号： H03H7/00
CPC分类号： H05H1/46 , H01J37/32174 , H03H1/0007 , H03H7/01 , H03H7/38
摘要： A filter for filtering radio frequency (RF) power transmitted from an electrostatic chuck (ESC) in a plasma processing system. The plasma processing system may include a heating element disposed at the ESC. The plasma processing system may further include a power supply. The filter may include a core member and a cable wound around and wound along the core member to form a set of inductors. The cable may include a plurality of wires, including a first wire and a second wire, a portion of the first wire and a portion of the second wire being twisted together, a first end of the first wire and a first end of the second wire being connected to the heating element, each of a second end of the first wire and a second end of the second wire being connected to a capacitor and being connected to the power supply.
摘要翻译：一种用于过滤在等离子体处理系统中从静电卡盘（ESC）传送的射频（RF）功率的滤波器。等离子体处理系统可以包括设置在ESC处的加热元件。等离子体处理系统还可以包括电源。过滤器可以包括芯部件和缠绕在芯部件上并缠绕的电缆，以形成一组电感器。电缆可以包括多根线，包括第一线和第二线，第一线的一部分和第二线的一部分被扭绞在一起，第一线的第一端和第二线的第一端连接到加热元件，第一线的第二端和第二线的第二端中的每一个连接到电容器并连接到电源。

4. 发明申请

US20110115379A1 CURRENT CONTROL IN PLASMA PROCESSING SYSTEMS 有权
标题翻译：等离子体处理系统中的电流控制
公开(公告)号：US20110115379A1
公开(公告)日：2011-05-19
申请号：US12908468
申请日：2010-10-20
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
IPC分类号： H05H1/24
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32935
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统包括用于传导用于维持等离子体的至少一部分的电流的线圈。等离子体处理系统还包括与线圈耦合的传感器，用于测量供电电流的大小以提供幅度测量，而不测量所提供的电流的任何相位角。所提供的电流是用于提供多个电流（例如，包括电流）的电流或总电流。等离子体处理系统还包括与传感器耦合的控制器，用于使用使用幅度测量导出的幅度测量和/或信息来生成指令，而不使用与相位角测量有关的信息，并且用于提供用于控制提供电流和/或总电流的大小。

5. 发明授权

US08736175B2 Current control in plasma processing systems 有权
标题翻译：等离子体处理系统中的电流控制
公开(公告)号：US08736175B2
公开(公告)日：2014-05-27
申请号：US12908468
申请日：2010-10-20
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani , Arthur Sato , Neil Martin Paul Benjamin , Norman Williams
IPC分类号： H05B31/26
CPC分类号： H01J37/321 , H01J37/32174 , H01J37/32935
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system includes a coil for conducting a current for sustaining at least a portion of the plasma. The plasma processing system also includes a sensor coupled with the coil for measuring a magnitude of a supplied current to provide a magnitude measurement without measuring any phase angle of the supplied current. The supplied current is the current or a total current that is used for providing a plurality of currents (e.g., including the current). The plasma processing system also includes a controller coupled with the sensor for generating a command using the magnitude measurement and/or information derived using the magnitude measurement, without using information related to phase angle measurement, and for providing the command for controlling the magnitude of the supplied current and/or a magnitude of the total current.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统包括用于传导用于维持等离子体的至少一部分的电流的线圈。等离子体处理系统还包括与线圈耦合的传感器，用于测量供电电流的大小以提供幅度测量，而不测量所提供的电流的任何相位角。所提供的电流是用于提供多个电流（例如，包括电流）的电流或总电流。等离子体处理系统还包括与传感器耦合的控制器，用于使用使用幅度测量导出的幅度测量和/或信息来生成指令，而不使用与相位角测量相关的信息，并且用于提供用于控制提供电流和/或总电流的大小。

6. 发明申请

US20100314048A1 ADJUSTING CURRENT RATIOS IN INDUCTIVELY COUPLED PLASMA PROCESSING SYSTEMS 有权
标题翻译：在电感耦合等离子体处理系统中调整电流比
公开(公告)号：US20100314048A1
公开(公告)日：2010-12-16
申请号：US12728112
申请日：2010-03-19
申请人： Maolin Long , Seyed Jafar Jafarian-Tehrani
发明人： Maolin Long , Seyed Jafar Jafarian-Tehrani
IPC分类号： H05H1/34 , H01L21/3065 , G05F1/00
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3211 , H01J37/32137 , H01J37/32183 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.
摘要翻译：一种用于产生等离子体以处理至少晶片的等离子体处理系统。等离子体处理系统可以包括用于传导第一电流以维持等离子体的至少第一部分的第一线圈。等离子体处理系统还可以包括用于传导第二电流以维持等离子体的至少第二部分的第二线圈。等离子体处理系统还可以包括用于为第一电流和第二电流供电的电源。等离子体处理系统还可以包括并联电路，用于调节第一电流的电流强度和第二电流的电流强度之一。并联电路可以电耦合在电源和第一线圈和第二线圈中的至少一个之间。并联电路可以包括彼此并联电连接的电感器和可变电容器。

7. 发明授权

US07983018B2 Plasma processing system ESC high voltage control and methods thereof 有权
标题翻译：等离子体处理系统ESC高压控制及其方法
公开(公告)号：US07983018B2
公开(公告)日：2011-07-19
申请号：US12848970
申请日：2010-08-02
申请人： Seyed Jafar Jafarian-Tehrani , Ralph Jan-Pin Lu
发明人： Seyed Jafar Jafarian-Tehrani , Ralph Jan-Pin Lu
IPC分类号： H01L21/683 , H01T23/00
CPC分类号： H01L21/6831 , H01L21/67069 , Y10T29/49998 , Y10T279/23
摘要： An arrangement for securing a wafer during substrate processing is provided. The arrangement includes a power supply and an electrostatic chuck (ESC). The ESC supports the wafer and includes a positive and a negative terminal. A positive high voltage is provided to the positive terminal through an RF filter and a negative high voltage is provided to the negative terminal through the RF filter. The arrangement also includes a first and a second trans-impedance amplifiers (TIAs) that measure a first set of voltages for determining a value of a positive load current applied to the positive terminal and a third and fourth TIAs that measure a second set of voltages for determining a value of a negative load current applied to the negative terminal. The arrangement yet also includes a program to adjust a bias voltage using the values of the positive load current and the negative load current.
摘要翻译：提供了一种用于在衬底处理期间固定晶片的布置。该装置包括电源和静电卡盘（ESC）。 ESC支持晶片，并包括正极和负极。通过RF滤波器向正端子提供正高电压，并通过RF滤波器将负高压提供给负极端子。该装置还包括测量第一组电压以确定施加到正极端子的正负载电流的值的第一和第二跨阻放大器（TIA），以及测量第二组电压的第三和第四TIA 用于确定施加到负极端子的负载电流的值。该装置还包括使用正负载电流和负负载电流的值来调节偏置电压的程序。

8. 发明申请

US20110051307A1 PLASMA PROCESSING SYSTEM ESC HIGH VOLTAGE CONTROL AND METHODS THEREOF 有权
标题翻译：等离子体处理系统ESC高压控制及其方法
公开(公告)号：US20110051307A1
公开(公告)日：2011-03-03
申请号：US12848970
申请日：2010-08-02
申请人： Seyed Jafar Jafarian-Tehrani , Ralph Jan-Pin Lu
发明人： Seyed Jafar Jafarian-Tehrani , Ralph Jan-Pin Lu
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H01L21/67069 , Y10T29/49998 , Y10T279/23
摘要： An arrangement for securing a wafer during substrate processing is provided. The arrangement includes a power supply and an electrostatic chuck (ESC). The ESC supports the wafer and includes a positive and a negative terminal. A positive high voltage is provided to the positive terminal through an RF filter and a negative high voltage is provided to the negative terminal through the RF filter. The arrangement also includes a first and a second trans-impedance amplifiers (TIAs) that measure a first set of voltages for determining a value of a positive load current applied to the positive terminal and a third and fourth TIAs that measure a second set of voltages for determining a value of a negative load current applied to the negative terminal. The arrangement yet also includes a program to adjust a bias voltage using the values of the positive load current and the negative load current.
摘要翻译：提供了一种用于在衬底处理期间固定晶片的布置。该装置包括电源和静电卡盘（ESC）。 ESC支持晶片，并包括正极和负极。通过RF滤波器向正端子提供正高电压，并通过RF滤波器将负高压提供给负极端子。该装置还包括测量第一组电压以确定施加到正极端子的正负载电流的值的第一和第二跨阻放大器（TIA），以及测量第二组电压的第三和第四TIA 用于确定施加到负极端子的负载电流的值。该装置还包括使用正负载电流和负负载电流的值来调节偏置电压的程序。

9. 发明授权

US5824606A Methods and apparatuses for controlling phase difference in plasma processing systems 失效
标题翻译：用于控制等离子体处理系统中的相位差的方法和装置
公开(公告)号：US5824606A
公开(公告)日：1998-10-20
申请号：US642172
申请日：1996-03-29
申请人： Robert D. Dible , Stephen G. Bradley , Seyed Jafar Jafarian-Tehrani
发明人： Robert D. Dible , Stephen G. Bradley , Seyed Jafar Jafarian-Tehrani
IPC分类号： H01J37/32 , H05H1/46 , H01L21/00 , B44C1/22
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32165 , H01J37/32174 , H01J37/32183 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J37/3299 , H05H1/46
摘要： A method in a plasma processing system for modifying a phase difference between a first radio frequency (RF) signal and a second RF signal. The first RF signal is supplied by a first RF power source to a first electrode and the second RF signal is supplied by a second RF power source to a second electrode of a plasma processing system. The second RF power source is coupled to the first RF power source as a slave RF power source in a master-and-slave configuration. The method includes the step of ascertaining a phase difference between a phase of the first RF signal and a phase of the second RF signal. The method further includes the step of comparing the phase difference with a phase control set point signal to output a control signal to the second RF power source, whereby the second RF power source, responsive to the control signal, modifies the phase of the second RF signal to cause the phase difference to approximate a phase difference value represented by the phase control set point signal.
摘要翻译：一种用于修改第一射频（RF）信号和第二RF信号之间的相位差的等离子体处理系统中的方法。第一RF信号由第一RF电源提供给第一电极，第二RF信号由第二RF电源提供给等离子体处理系统的第二电极。第二RF电源耦合到作为主从配置的从RF电源的第一RF电源。该方法包括确定第一RF信号的相位和第二RF信号的相位之间的相位差的步骤。该方法还包括将相位差与相位控制设定点信号进行比较以将控制信号输出到第二RF电源的步骤，由此第二RF电源响应于控制信号修改第二RF的相位信号使相位差近似由相位控制设定点信号表示的相位差值。

10. 发明授权

US09074285B2 Systems for detecting unconfined-plasma events 有权
标题翻译：无侧限等离子体事件检测系统
公开(公告)号：US09074285B2
公开(公告)日：2015-07-07
申请号：US12101804
申请日：2008-04-11
申请人： John Pease , Seyed Jafar Jafarian-Tehrani
发明人： John Pease , Seyed Jafar Jafarian-Tehrani
IPC分类号： C23C16/00 , C23F4/00 , H01J37/32 , H05H1/00
CPC分类号： C23F4/00 , H01J37/32935 , H05H1/0081
摘要： A system for detecting unconfined-plasma events in a plasma processing chamber is disclosed. The system may include a sensor disposed in the plasma processing chamber for providing a current when unconfined plasma is present in the plasma processing chamber. The system may also include a converter for converting the current into a voltage and a filter for removing noise from the voltage to provide a first signal. The system may also include a detector for determining presence of the unconfined plasma using an amplified level of the first signal and/or the first signal. The system may also include a conductor for coupling the sensor and the converter to conduct the current from the sensor to the converter. The system may also include a shield for enclosing at least a portion of the conductor to at least reduce electromagnetic noise received by the conductor.
摘要翻译：公开了一种用于检测等离子体处理室中的无约束等离子体事件的系统。该系统可以包括设置在等离子体处理室中的传感器，用于当等离子体处理室中存在无约束等离子体时提供电流。该系统还可以包括用于将电流转换成电压的转换器和用于从电压去除噪声以提供第一信号的滤波器。该系统还可以包括用于使用第一信号和/或第一信号的放大电平来确定无约束等离子体的存在的检测器。该系统还可以包括用于耦合传感器和转换器以将电流从传感器传导到转换器的导体。该系统还可以包括用于封闭导体的至少一部分以至少降低由导体接收的电磁噪声的屏蔽。

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