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    • 1. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08354728B2
    • 2013-01-15
    • US12836826
    • 2010-07-15
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • H01L29/76H01L29/94H01L29/788H01L27/148H01L29/768
    • H01L29/7834H01L23/5225H01L23/585H01L29/0638H01L29/0653H01L29/0692H01L29/1083H01L29/402H01L29/7833H01L2924/0002H01L2924/00
    • A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
    • 一种半导体器件,包括:半导体层; 栅极绝缘层; 栅电极; 一个通道区域 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层,其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层,其中当从所述顶侧观察时,所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中,所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域 所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上,所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域 在从顶侧观察的通道宽度方向上。
    • 4. 发明申请
    • Semiconductor device
    • 半导体器件
    • US20070057280A1
    • 2007-03-15
    • US11519169
    • 2006-09-11
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • H01L29/74
    • H01L29/7834H01L23/5225H01L23/585H01L29/0638H01L29/0653H01L29/0692H01L29/1083H01L29/402H01L29/7833H01L2924/0002H01L2924/00
    • A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
    • 一种半导体器件,包括:半导体层; 栅极绝缘层; 栅电极; 一个通道区; 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层,其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层,其中当从所述顶侧观察时,所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中,所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域 所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上,所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域 在从顶侧观察的通道宽度方向上。
    • 5. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07906821B2
    • 2011-03-15
    • US12129191
    • 2008-05-29
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • H01L29/76H01L29/94H01L29/788H01L27/148H01L29/768
    • H01L29/7834H01L23/5225H01L23/585H01L29/0638H01L29/0653H01L29/0692H01L29/1083H01L29/402H01L29/7833H01L2924/0002H01L2924/00
    • A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
    • 一种半导体器件,包括:半导体层; 栅极绝缘层; 栅电极; 一个通道区; 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层,其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层,其中当从所述顶侧观察时,所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中,所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域 所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上,所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域 在从顶侧观察的通道宽度方向上。
    • 6. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07394137B2
    • 2008-07-01
    • US11519169
    • 2006-09-11
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • Masahiro HayashiTakahisa AkibaKunio WatanabeTomo TakasoSusumu Kenmochi
    • H01L29/76H01L29/94H01L31/062
    • H01L29/7834H01L23/5225H01L23/585H01L29/0638H01L29/0653H01L29/0692H01L29/1083H01L29/402H01L29/7833H01L2924/0002H01L2924/00
    • A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
    • 一种半导体器件,包括:半导体层; 栅极绝缘层; 栅电极; 一个通道区; 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层,其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层,其中当从所述顶侧观察时,所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中,所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域 所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上,所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域 在从顶侧观察的通道宽度方向上。
    • 10. 发明申请
    • PROCESSES FOR PRODUCING A FLUOROSULFONYL GROUP-CONTAINING COMPOUND AND A COMPOUND LED FROM THE FLUOROSULFONYL GROUP-CONTAINING COMPOUND
    • 用于生产含氟聚合物基团的化合物的方法和来自含氟化合物基团的化合物的化合物
    • US20080287694A1
    • 2008-11-20
    • US11829579
    • 2007-07-27
    • Takashi OKAZOEAtsushi WatakabeMasahiro ItoKunio WatanabeTakeshi EriguchiKimiaki KashiwagiShu-zhong Wang
    • Takashi OKAZOEAtsushi WatakabeMasahiro ItoKunio WatanabeTakeshi EriguchiKimiaki KashiwagiShu-zhong Wang
    • C07D317/30C07D317/18
    • C08F24/00C07D317/18C07D317/24C07D317/42
    • A fluorosulfonyl group-containing compound having a high polymerization reactivity, a process for its production, a sulfonyl group-containing polymerizable monomer led from the sulfonyl group-containing compound, and a polymer obtainable by polymerizing the sulfonyl group-containing polymerizable monomer, are provided.A compound (3) is fluorinated to form a compound (4), and then, the compound (4) is subjected to a decomposition reaction to produce a compound (5). A preferred compound (5-1) of the compound (5) is thermally decomposed to produce a compound (7-1) having a high polymerization reactivity. wherein RA is a bivalent organic group such as a fluoroalkylene group, RAF is a group having RA fluorinated, or the same group as RA, each of RB to RD which are independent of one another, is a hydrogen atom, etc., each of RBF to RDF is a fluorine atom, etc., RE is a monovalent organic group, REF is a group having RE fluorinated, or the same group as RE, E is a bivalent connecting group, EF is the same group as E, or a group having E fluorinated, EF1 is a group formed by scission of EF, each of X1 to X3 is a hydrogen atom, etc., and each of X1F to X3F is a fluorine atom, etc.
    • 提供具有高聚合反应性的含氟磺酰基的化合物,其制备方法,由含磺酰基的化合物引发的含磺酰基的可聚合单体和通过聚合含磺酰基的可聚合单体获得的聚合物 。 化合物(3)被氟化以形成化合物(4),然后使化合物(4)进行分解反应以制备化合物(5)。 将化合物(5)的优选化合物(5-1)热分解,得到聚合反应性高的化合物(7-1)。 其中R A是二价有机基团,例如氟代亚烷基,R AF是​​具有氟代的基团,或与氟代亚烷基相同的基团 各自独立的R B,R D,D各自为氢原子等,R a, 另一方面,BF> BF 是氟原子等,R E是一价有机基团,R EF是 氟化的基团或与R E相同的基团,E是二价连接基团,E是与 E或具有E氟化基团的基团,是通过将X 1和X 2各自分开形成的基团。 > 3是氢原子等,X 1〜X 3各自为氟原子等。